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Implementation of a multiple round quantum dense coding using nuclear magnetic resonance

Science china({1.,Mechanics & Astronomy) 2005年第6期48卷 706-715页

作者： zhang jingfu1, xie jingyi2. wang chuan1,{2., & long guilu1,5 1. key laboratory for quantum information and measurements of moe, department of physics, tsinghua university, Beijing 100084,china 2. department of Materials Science and Engineering, Beijing Normal university, Beijing 100875, china 3. Testing and Analytical Center, Beijing Normal university, Beijing 100875,china 4. department of physics, Beijing Normal university, Beijing 100875, china 5. key laboratory For atomic and Molecular Nanosciences, tsinghua university, Beijing 100084,china 1. key {1. For quantum information and measurements of moe Department of Physics Tsinghua University 100084 Beijing China 2. department of Materials science and Engineering Beijing Normal University 100875 Beijing China 3. Testing and Analytical Center Beijing Normal University 100875 Beijing China 4. department of physics Beijing Normal University 100875 Beijing China 5. key {1. For Atomic and Molecular Nanosciences Tsinghua University 100084 Beijing China

A multiple round quantum dense coding scheme based on the quantum phase estimation algorithm is proposed and implemented in a three qubit nuclear magnetic resonance (NMR) quantum computer. Using an m + 1.qubit system, Bob can transmit one of 2.+1.messages to Alice, through manipulating only one qubit and exchanging it between Alice and Bob for m rounds. The information capacity is enhanced to m + 1.bits as compared to m bits in a classical scheme. The scheme has been demonstrated in NMR system, and the experimental results show a good agreement between theory and experiment.

关键词： quantum dense coding, multiple round, nuclear magnetic resorance

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Biphase-to-monophase structure evolution of Na_(0.766+x)Li_(x)Ni_(0.33-x)Mn_(0.5)Fe_(0.1.Ti_(0.07)O_(2. toward ultradurable Na-ion batteries

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Carbon Energy 2024年第9期6卷 66-79页

作者： Mengting Liu zhiwei Cheng Xu Zhu Haojie Dong Tianran Yan Liang {1. {2. Zheng Hu-Rong Yao Xian-Zuo wang Lianzheng Yu Bing Xiao Yao Xiao Peng-Fei wang State key {1. of Electrical Insulation and Power Equipment School of Electrical EngineeringCenter of Nanomaterials for Renewable EnergyXi'an Jiaotong UniversityXi'anShaanxiChina Jiangsu key {1. of Advanced Negative Carbon Technologies Institute of Functional Nano&Soft Materials(FUNSOM)Soochow UniversitySuzhouJiangsuChina Fujian Provincial key {1. of {2. Manipulation and New Energy Materials College of Physics and EnergyFujian Normal UniversityFuzhouFujianChina Wenzhou key {1. of Sodium-Ion Batteries Institute for Carbon NeutralizationWenzhou University Technology InnovationWenzhouZhejiangChina

Layered composite oxide materials with O3/P2.biphasic crystallographic structure typically demonstrate a combination of high capacities of the O3 phase and high operation voltages of the P2.***,their practical applications are seriously obstructed by difficulties in thermodynamic phase regulation,complicated electrochemical phase transition,and unsatisfactory cycling ***,we propose an efficient structural evolution strategy from biphase to monophase of Na_(0.766+x)Li_(x)Ni_(0.33-x)Mn_(0.5)Fe_(0.1.Ti_(0.07)O_(2. through Li+*** role of Li+substitution not only simplifies the unfavorable phase transition by altering the local coordination of transition metal(TM)cations but also stabilizes the cathode–electrolyte interphase to prevent the degradation of TM cations during battery *** a result,the thermodynamically robust O_(3)-Na_(0.82.)Li_(0.06)Ni_(0.2.)Mn_(0.5)Fe_(0.1.Ti_(0.07)O_(2. cathode delivers a high capacity of 1.9.4 mAh g^(-1. at 0.1.C and shows pro{1.ed cycling life at high rates,with capacity retention of 81.6%at 5 C over 500 *** work establishes a solid relationship between the thermodynamic structure evolution and electrochemistry of layered cathode materials,contributing to the development of {1.-life sodium-ion batteries.

关键词： electrochemistry Li+substitution Na-ion batteries O_(3)phase phase transition

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非掺杂型Si/SiGe异质结外延与表征

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物理学报 2024年第11期73卷 297-304页

作者：耿鑫张结印卢文龙明铭刘方泽符彬啸褚逸昕颜谋回王保传张新定郭国平张建军华南师范大学物理学院广州510631 松山湖材料实验室半导体异质材料与器件中心东莞523830 中国科学技术大学中国科学院量子信息重点实验室合肥230026 中国科学院物理研究所纳米物理与器件重点实验室北京100190 上海大学理学院上海200444

以自旋为编码单元的硅基半导体量子计算与传统微电子工艺兼容,易拓展且可以同位素纯化提高退相干时间,因而备受关注.本研究工作通过分子束外延生长了高质量非掺杂型Si/SiGe异质结并测试了二维电子气迁移率.球差电镜观察到原子级尖锐界面... 详细信息

以自旋为编码单元的硅基半导体量子计算与传统微电子工艺兼容,易拓展且可以同位素纯化提高退相干时间,因而备受关注.本研究工作通过分子束外延生长了高质量非掺杂型Si/SiGe异质结并测试了二维电子气迁移率.球差电镜观察到原子级尖锐界面,原子力显微镜表征显示其表面均方根粗糙度仅为0.44 nm,低温下迁移率达到2..2.0}1.^(4)cm^(2.·V^(–1.·s^(–1..不同栅压下载流子浓度和迁移率的幂指数为1.02.,材料丁格比值在7—1.之间,表明载流子主要受到背景杂质散射和半导体/氧化物的界面散射.

关键词： Si/SiGe异质结二维电子气霍尔迁移率硅基量子计算

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