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Influences of chemical reactions on polysulfide reduction reaction process on promotor surface in Li-S batteries

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Nano Research 2024年第4期17卷 2712-2718页

作者： Yufeng Luo Zhenhan Fang Zixin hong Shaorong duan Haitao liu Hengcai wu Qunqing Li Yuegang zhang Shoushan Fan Wenhui duan Jiaping Wang tsinghua-Foxconn Nanotechnology Research Center Tsinghua UniversityBeijing 100084China Department of Physics Tsinghua UniversityBeijing 100084China laboratory of Computational Physics Institute of Applied Physics and Computational MathematicsBeijing 100088China Frontier science Center for Quantum information Tsinghua UniversityBeijing 100084China

Polar promotors have been proven effective in catalyzing the polysulfide(PS)reduction reaction(PSRR)process in lithium-sulfur(Li-S)***,the promotor surface tends to be poisoned due to the accumulation of insoluble discharging products of lithium disulfide(Li_(2)S_(2))and lithium sulfide(Li_(2)S)during Li-S battery ***,we investigate the detailed PSRR mechanism on the surface of manganese sulfides(MnS)as a representative promoter by performing in-situ Raman mapping *** catalytic ability of MnS enables thorough electrochemical reduction of PSs to Li_(2)S_(2) and Li_(2)S on the MnS *** generated Li_(2)S_(2) and Li_(2)S then adsorb the dissolved PSs via chemical reactions among sulfur species during the subsequent PSRR *** phenomenon mitigates promotor poisoning and continuously improves the reversible ***,the assembled Li-S cell demonstrates excellent electrochemical performance after introducing a conductive interlayer containing a thin piece of carbon nanotube film and MnS promotors.

关键词： promotors polysulfides chemical reactions catalytic ability in-situ Raman measurements

Two-dimensional materials for future information technology: status and prospects

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science china(information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi zhang Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong duan Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu liu Can liu Chunsen liu Guanyu liu Kaihui liu Liwei liu Sheng liu Yuan liu Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit science and Engineering Nanjing University of Posts and Telecommunications State Key laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou laboratory State Key laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory Department of Applied Physics The Hong Kong Polytechnic University Key laboratory for Micro-Nano Physics and technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University national Key laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key laboratory of Nanophotonic Materials and Devices & Key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

Experimental Realization of an Intrinsic Magnetic Topological Insulator

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Chinese Physics Letters 2019年第7期36卷 66-71页

作者： Yan Gong Jingwen Guo Jiaheng Li Kejing Zhu Menghan Liao Xiaozhi liu Qinghua zhang Lin Gu Lin Tang Xiao Feng Ding zhang Wei Li Canli Song Lili Wang Pu Yu Xi Chen Yayu Wang hong Yao Wenhui duan Yong Xu Shou-Cheng zhang Xucun Ma Qi-Kun Xue Ke He State Key laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University Beijing 100084 2beijing national laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 beijing Academy of Quantum information sciences Beijing 100193 Collaborative Innovation Center of Quantum Matter Beijing 100084 Institute for Advanced Study Tsinghua University Beijing 100084 RIKEN Center for Emergent Matter science (CEMS) Wako Saitama 351-0198 Japan Stanford Center for Topological Quantum Physics Department of Physics Stanford University Stanford California 94305-4045 USA

An intrinsic magnetic topological insulator(TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remained elusive experimentally for a long time. Here we report the experimental realization of thin films of an intrinsic magnetic TI, MnBi2Te4, by alternate growth of a Bi2Te3 quintuple layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators at higher temperature and in a well-controlled way.

关键词： intrinsic magnetic stoichiometric magnetic well-controlled way

Advances in nuclear detection and readout techniques

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Nuclear science and Techniques 2023年第12期34卷 281-358页

作者： Rui He Xiao‑Yang Niu Yi Wang hong‑Wei Liang hong‑Bang liu Ye Tian hong‑Lin zhang Chao‑Jie Zou Zhi‑Yi liu Yun‑Long zhang Hai‑Bo Yang Ju Huang hong‑Kai Wang Wei‑Jia Han Bei Cao Gang Chen Cong Dai Li‑Min duan Rui‑Rui Fan Fang‑Fa Fu Jian‑Hua Guo Dong Han Wei Jiang Xian‑Qin Li Xin Li Zhuo‑Dai Li Yu‑Tie Liang Shun Liao De‑Xu Lin Cheng‑Ming liu Guo‑Rui liu Jun‑Tao liu Ze Long Meng‑Chen Niu Hao Qiu Hu Ran Xiang‑Ming Sun Bo‑Tan Wang Jia Wang Jin‑Xiang Wang Qi‑Lin Wang Yong‑Sheng Wang Xiao‑Chuan Xia Hao‑Qing Xie He‑Run Yang hong Yin hong Yuan Chun‑Hui zhang Rui‑Guang Zhao Ran Zheng Cheng‑Xin Zhao Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China School of Nuclear science and technology University of Chinese Academy of SciencesBeijing 100049China Advanced Energy science and technology Guangdong laboratory Huizhou 516000China Key laboratory of Particle and Radiation Imaging Department of Engineering PhysicsTsinghua UniversityBeijing 100084China School of Integrated Circuits Dalian University of TechnologyDalian 116020China Guangxi Key laboratory for Relativistic Astrophysics School of Physical Science and TechnologyGuangxi UniversityNanning 530004China School of Nuclear science and technology Lanzhou UniversityLanzhou 730000China State Key laboratory of Particle Detection and Electronics University of Science and Technology of ChinaHefei 230026China Department of Radiation Oncology National Cancer Center/National Clinical Research Center for Cancer/Cancer HospitalChinese Academy of Medical Sciences and Peking Union Medical CollegeBeijing 100021China Electronic Engineering School Heilongjiang UniversityHarbin 150080China Spallation Neutron Source science Center Dongguan 523803China Micro‑electronic Department Harbin Institute of TechnologyHarbin 150001China Purple Mountain Observatory Chinese Academy of SciencesNanjing 210034China Liaoning Academy of Materials Shenyang 110167China Istituto Nazionale di Fisica Nucleare Sezione di PerugiaPerugiaItaly School of Mathematics and Physics Chengdu University of TechnologyChengdu 620035China PLAC Key Laboratory of Quark and Lepton Physics(MOE)Central China Normal UniversityWuhan 430079China School of Electronics and information Northwestern Polytechnical UniversityXi’an 710129China State Key Lab of Superhard Materials College of PhysicsJilin UniversityChangchun 130012China School of Computer science Northwestern Polytechnical UniversityXi’an 710129China

“A Craftsman Must Sharpen His Tools to Do His Job,”said *** detection and readout techniques are the foundation of particle physics,nuclear physics,and particle astrophysics to reveal the nature of the ***,they are being increasingly used in other disciplines like nuclear power generation,life sciences,environmental sciences,medical sciences,*** article reviews the short history,recent development,and trend of nuclear detection and readout techniques,covering Semiconductor Detector,Gaseous Detector,Scintillation Detector,Cherenkov Detector,Transition Radiation Detector,and Readout *** explaining the principle and using examples,we hope to help the interested reader underst and this research field and bring exciting information to the community.

关键词： Silicon detector Wide bandgap detector Time projection chamber(TPC) Multigap resistive plate chamber detector(MRPC) Scintillation detector Calorimeters Cherenkov detector Transition radiation detector Artificial intelligence Trigger-less readout

Evidence for the decays of ∧_c^+→∑^+η and ∑^+η’

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Chinese Physics C 2019年第8期43卷 15-23页

作者： M.Ablikim F.F.An Q.An Y.Bai Y.Ban H.Cai X.Cai G.F.Cao J.F.Chang G.Chen H.S.Chen J.C.Chen M.L.Chen P.L.Chen S.J.Chen Y.B.Chen W.Cheng H.LDai J.P.Dai Z.Y.Deng Y.Ding C.Dong J.Dong L.Y.Dong M.Y.Dong Z.L.Dou S.X.Du P.F.duan J.Z.Fan J.Fang S.S.Fang Y.Fang C.Q.Feng C.D.Fu Y.Fu Q.Gao X.L.Gao Y.Gao Y.G.Gao Z.Gao L.Gong W.X.Gong L.M.Gu M.H.Gu Y.T.Gu A.Q.Guo L.B.Guo R.P.Guo Y.P.Guo S.Han X.Q.Hao K.L.He Y.K.Heng Z.L.Hou H.M.Hu J.F.Hu T.Hu Y.Hu G.S.Huang J.S.Huang X.T.Huang X.Z.Huang Z.L.Huang Q.Ji Q.P.Ji X.B.Ji X.L.Ji X.S.Jiang X.Y.Jiang J.B.Jiao Z.Jiao D.P.Jin S.Jin Y.Jin X.S.Kang B.C.Ke C.Li Cheng Li D.M.Li F.Li F.Y.Li G.Li H.B.Li H.J.Li J.C.Li J.W.Li Ke Li Lei Li P.L.Li P.R.Li Q.Y.Li T.Li W.D.Li W.G.Li X.L.Li X.N. Li X.Q.Li Z.B.Li H.Liang Y.F.Liang Y.T.Liang G.R.Liao L.Z.Liao C.X.Lin D.X.Lin B.liu B.J.liu C.X.liu D.liu D.Y.liu F.H.liu Fang liu Feng liu H.B.liu H.L.liu H.M.liu Huanhuan liu Huihui liu J.B.liu J.Y.liu K.liu K.Y.liu Ke liu Q.liu S.B.liu X.liu Y.B.liu Z.A.liu Zhiqing liu Y.F.Long X.C.Lou H.J.Lu J.D.Lu J.G.Lu Y.Lu Y.P.Lu C.L.Luo M.X.Luo T.Luo X.L.Luo X.R.Lyu F.C.Ma H.L.Ma L.L.Ma M.M.Ma Q.M.Ma X.N.Ma X.X.Ma X.Y.Ma Y.M.Ma Y.J.Mao Z.P.Mao Z.X.Meng J.Min T.J.Min X.H.Mo Y.J.Mo Z.Ning S.L.Niu S.L.Olsen Q.Ouyang Y.Pan H.P.Peng J.L.Ping R.G.Ping H.R.Qi M.Qi T.Y.Qi S.Qian C.F.Qiao N.Qin Z.H.Qin J.F.Qiu S.Q.Qu G.Rong W.Shan X.Y.Shan M.Shao C.P. Shen P.X.Shen X.Y.Shen H.Y.Sheng X.Shi J.J.Song X.Y.Song G.X.Sun J.F.Sun L.Sun S.S.Sun X.H.Sun Y.J.Sun Y.K.Sun Y.Z.Sun Z.J.Sun Z.T.Sun Y.T.Tan C.J.Tang G.Y.Tang X.Tang B.Wang B.L.Wang C.W.Wang D.Y.Wang Dan Wang K.Wang L.L.Wang L.S.Wang M.Wang Meng Wang P.Wang P.L.Wang W.P.Wang X.F.Wang Y.Wang Y.F.Wang Z.Wang Z.G.Wang Z.Y.Wang Zongyuan Wang D.H.Wei S.P.Wen L.H.wu L.J.wu Z.wu L.Xia Y.Xia D.Xiao Y.J.Xiao Z.J.Xiao Y.G.Xie Y.H.Xie X.A.Xiong Q.L.Xiu G.F.Xu J.J.Xu L.Xu Q.J.Xu Q.N.Xu X.P.Xu F.Yan L.Yan w.B.Yan W.C.Yan Y.H.Yan H.J.Yang H.X.Yang L.Yang S.L.Yang Y.H.Yang Y.X.Yang Yifan Yang Z.Q.Yang M.Ye M.H.Ye J.H.Yin Z.Y.You B.X.Yu C.X.Yu J.S.Yu C.Z.Yuan Y.Yuan Y.Zeng B.X.zhang B.Y.zhang Institute of High Energy Physics G.I.Budker Institute of Nuclear Physics SB RAS(BINP) the Novosibirsk State university Helmholtz Institute Mainz Bochum Ruhr-university university of Turin INFN State Key laboratory of Particle Detection and Electronics university of science and technology of china Southeast university Joint Institute for Nuclear Research INFN Laboratori Nazionali di Frascati Peking university Institute of Physics and technology Indiana university Bloomington Carnegie Mellon university Johannes Gutenberg university of Mainz INFN Sezione di Ferrara wuhan university Ankara university university of Chinese Academy of sciences Istanbul Bilgi university the Moscow Institute of Physics and technology the Functional Electronics laboratory Tomsk State University university of South china Nanjing university Shanghai Jiao Tong university Key laboratory for Particle Physics Astrophysics and CosmologyMinistry of EducationShanghai Key Laboratory for Particle Physics and CosmologyInstitute of Nuclear and Particle Physics Liaoning university Nankai university Zhengzhou university tsinghua university university of Ferrara university of Eastern Piedmont Central china Normal university university of Minnesota Minneapolis GSI Helmholtzcentre for Heavy Ion Research GmbH Guangxi university Nanjing Normal university KVI-CART University of Groningen Henan Normal university university of Hawaii Honolulu Shandong university university of the Punjab university of Muenster Uppsala university Huangshan College university of Jinan Justus-Liebig-Universitaet Giessen II.Physikalisches Institut Istanbul Arel university Soochow university beijing Institute of Petrochemical technology china Center of Advanced science and technology Sun Yat-Sen university Sichuan university Guangxi Normal university Indian Institute of technology Madras Shanxi university Henan university of science and technology Lanzhou university Zhejiang university Fudan university Key laboratory of Nuclear Physics and Ion-beam Application(MOE)and Institute of

We study the hadronic decays of ∧c+ to the final states ∑+η and ∑+η’,using an e+e-annihilation data sample of 567 pb-1 taken at a center-of-mass energy of 4.6 GeV with the BESIII detector at the BEPCⅡ *** find evidence for the decays ∧c+→∑+η and ∑+η’ with statistical significance of 2.5σ and 3.2σ,*** to the reference decays ∧c+→∑+π0 and ∑+ω,we obtain the ratios of the branching fractions■and ■to be 0.35±0.16±0.02 and 0.86±0.34±0.04,*** upper limits at the 90% confidence level are set to be■and■.Using BESIII measurements of the branching fractions of the reference decays,we determine B（∧c+→∑+η）=（0.41±0.19±0.05）%（1.34±0.53 ±0.19）%（1.9%）.Here,the first uncertainties are statistical and the second *** obtained branching fraction of ∧c+→∑+η is consistent with the previous measurement,and the branching fraction of ∧c+→∑+η’ is measured for the first time.

关键词： charmed baryon ∧c^+ decays branching fractions