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检索条件"作者=ZENG Zhaoquan1,3. WANG Yong2. DU Xiaolong1, MEI Zengxia1, KONG Xianghe3. JIA Jinfeng1, XUE Qikun1 & ZHANG Ze2. 4 1. State Key laboratory for Surface {3.,{2.,{3., beijing 100080, China"
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Role of gallium wetting layer in high-quality ZnO growth on sapphire (0001. substrates
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Science china(Physics,Mechanics & Astronomy) 2004年 第5期47卷 612-620页
作者: zeng zhaoquan1,3. wang yong2. du xiaolong1,{2.,{3., xue qikun1 & zhang ze2. 4 1. state key laboratory for surface Physics, Institute of Physics, Chinese Academy of Sciences, beijing 100080,{13. 2. laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, beijing 100080,{13. 3. College of Physics and Engineering, Qufu Normal University, Qufu 273.65,{13. 4. beijing University of Technology, beijing 100022,{13. 1. state {1. laboratory for {3. Physics Institute of Physics Chinese Academy of Sciences 100080 Beijing China 2. College of Physics and Engineering Qufu Normal University 273165 Qufu China 3. {1. of Electron Microscopy Institute of Physics Chinese Academy of Sciences 100080 Beijing China 4. beijing University of Technology 100022 Beijing China
A Ga wetting layer was used to modify the surface structure of sapphire (0001. substrate to prepare high-quality ZnO film by radio frequency plasma-assisted molecule beam epitaxy. We found that this Ga layer plays a c... 详细信息
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