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检索条件"作者=ZENG Zhaoquan1,3. WANG Yong2. DU Xiaolong1, MEI Zengxia1, KONG Xianghe3. JIA Jinfeng1, XUE Qikun1 & ZHANG Ze2. 4 1. State Key Laboratory for Surface Physics, {2. of Physics, chinese academy of Sciences,{3., china"
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Role of gallium wetting layer in high-quality ZnO growth on sapphire (0001. substrates
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Science china({1.,Mechanics & Astronomy) 2004年 第5期47卷 612-620页
作者： zeng zhaoquan1,{1.,{2.,{3., xue qikun1 & zhang ze2. 4 1. state key laboratory for surface physics, Institute of physics, chinese academy of sciences, Beijing 1.0080, china 2. laboratory of Electron Microscopy, Institute of physics, chinese academy of sciences, Beijing 1.0080, china 3. College of physics and Engineering, Qufu Normal University, Qufu 2.3.65, china 4. Beijing University of Technology, Beijing 1.002., china 1. state {1. laboratory for {3. {3. Institute of Physics Chinese Academy of Sciences 100080 Beijing China 2. College of physics and Engineering Qufu Normal University 273165 Qufu China 3. {1. of Electron Microscopy Institute of Physics Chinese Academy of Sciences 100080 Beijing China 4. Beijing University of Technology 100022 Beijing China
A Ga wetting layer was used to modify the surface structure of sapphire (0001. substrate to prepare high-quality ZnO film by radio frequency plasma-assisted molecule beam epitaxy. We found that this Ga layer plays a c... 详细信息
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