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Modelling the Segregation of Impurities During Solidification With Turbulent Electromagnetic Stirring

Journal of Iron and Steel Research International 2012年第S1期19卷 217-221页

作者： DELANNOY Yves zaidat kader SIMaP laboratory EPM GroupGrenoble INPBP 7538402 St Martin d'HeresFrance

This paper proposes an estimate of the stirring intensity needed to maintain an efficient segregation of impurities towards the liquid when crystallizing semiconductors such as silicon,with rapid solidification rates(several cm/h).The method,valid far from stagnation points or detachments,is based on the properties of turbulent boundary layers,with a normal velocity of the liquid towards the solid/liquid interface due to solidification,that has the same effect as boundary layer suction in *** transition between the diffusive regime(no segregation),and the convective regime(efficient segregation)occurs if the friction at the wall is greater than a threshold depending on the solidification rate.A chart is given to estimate the convecto-diffusive parameter from the ratio between stirring and solidification velocity,and the Reynolds number.

关键词： solidification electromagnetic stirring segregation

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Impact of the Travelling Magnetic Field on the Metallic Impurities During the Crystallization of Photovoltaic Silicon

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Journal of Iron and Steel Research International 2012年第S1期19卷 243-247页

作者： kader zaidat Mircea Cablea Abdallah Nouri Ghatfan Hassan Bachir Saadi Olga.Budenkova Annie.Gagnoud Yves.Delannoy SIMAP EPM-CNRS 1340 rue de la piscineF-38402Saint Martin d'Heres CedexFrance Silicor Materials Inc. VaughanOntarioCanada

Silicon is the most extensively studied semiconductor mainly owing to its wide applicability in the photovoltaic solar cell *** the qualily of Si photovoltaic cells depends on the purity of the material and on the grain structure of the ingot from which the wafers are *** electrical performance of such materials,i.e. mainly their minority carrier lifetime,is closely related to metal impurities present in the feedstock or introduced during crystal *** impurities strongly interact with existing crystal defects to form complexes,accumulate at dislocations or grain boundaries in different forms,or even form silieide precipitates,which simultaneously contain several metal *** such a context,it is necessary to control the segregation of impurities especially metallic in the grown ingot in order to optimize the cell properties as a function of the raw material purity.A new Bridgman set-up is developed in order to study the crystallization of photovoltaic Si under independently controlled solidification parameters growth rate,thermal gradient,purity and ***,either natural or forced,plays a very important role during the *** intensity and flow pattern affect heat and mass transfer and,consequently,macrostructure and segregation in a solidified *** the convection can be controlled by a travelling magnetic field in order to homogenize or segregate the rejected impurities such as metallic *** effects of the magnetic field intensity and frequency on the segregation and crystalline structure will be presented.

关键词： Silicon magnetic field macrostructure crystallization

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