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Q-Switched Raman Fiber Laser with Molybdenum Disulfide-Based Passive Saturable Absorber

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Chinese Physics Letters 2016年第7期33卷 98-101页

作者： N.Hisamuddin U.N.zakaria M.z.zulkifli A.A.Latiff H.Ahmad S.W.Harun Photonics Research Center University of Malaya Department of Electrical Engineering Faculty of EngineeringUniversity of Malaya Aston Institute of Photonics Technologies Aston University

We demonstrate a Q-switched Raman fiber laser using molybdenum disulfide （mos2） as a saturable absorber （SA）. The SA is assembled by depositing a mechanically exfoliated mos2 onto a fiber ferrule facet before it is matched with another clean ferrule via a connector. It is inserted in a Raman fiber laser cavity with a total cavity length of about 8kin to generate a Q-switching pulse train operating at 1560.2nm. A 7.7-kin-long dispersion compensating fiber with 584 ***-i km-1 of dispersion is used as a nonlinear gain medium. As the pump power is increased from 395 m W to 422 m W, the repetition rate of the Q-switching pulses can be increased from 132.7 to 137.4 kHz while the pulse width is concurrently decreased from 3.35μs to 3.03μs. The maximum pulse energy of 54.3 nJ is obtained at the maximum pump power of 422 roW. These results show that the mechanically exfoliated mos2 SA has a great potential to be used for pulse generation in Raman fiber laser systems.

关键词： of with SA Q-Switched Raman Fiber Laser with Molybdenum Disulfide-Based Passive Saturable Absorber is in for been that

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Generation and Shaping of Soliton-Like Pulses along Resonant Tunneling Diodes Nmos Varactors Lattice

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Journal of Modern Physics 2013年第8期4卷 1099-1104页

作者： Yerima Klofai Bernard z.Essimbi Department of Physics Higher Teachers Training CollegeUniversity of MarouaMarouaCameroon Department of Physics Faculty of ScienceUniversity of Yaounde 1YaoundeCameroon

The characteristics of N-type accumulation-mode mos (Nmos) varactors line periodically loaded with resonant tunneling diodes (RTDs) are used for soliton-like pulses generation and shaping. The problem of wide pulse breaking up into multiple pulses rather than a single is solved. Applying perturbative analysis, we show that the dynamics of the nonlinear transmission line (NLTL) is reduced to expanded Korteweg-de Vries (KdV) equation. Moreover, numerical integration of nonlinear differential and difference equations that result from the mathematical analysis of the line is discussed. As results, NLTL can simultaneously sharpen both leading and trailing of pulse edges and one could obtain a rising and sharpening step pulse.

关键词： Accumulation-Mode mos Soliton-Like Pulse Generation and Shaping Resonant Tunneling Diode Active Nonlinear Electrical Lattice Expanded KdV Equation

Monolayer mos_(2)synaptic devices synergistically modulated by Na^(+)ions and sulfur vacancies for neuromorphic computing and pain perception stimulation

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Journal of Materials Science & Technology 2023年第32期163卷 121-131页

作者： Y.B.Liu D.Cai T.C.zhao M.Shen X.zhou z.H.zhang X.W.Meng D.E.Gu State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China College of Chemistry and Materials Science Sichuan Normal UniversityChengdu 610066China Laboratory of Controllable Preparation and Application of Nanomaterials Chinese Academy of SciencesBeijing 100190China

Ion based synaptic devices(ISDs)are one of the excellent candidates for neuromorphic ***,most of ISDs utilized additional ion sources to supply ions for adjusting the conductance of the device channel,which might hinder the large-scale integration for fabricating hierarchical artificial neural *** a high-performance monolayer mos_(2) ISD is demonstrated using Na^(+)ions doped in mos_(2) lattice as ion *** from the Na^(+)ions and S vacancy defects in the mos_(2) lattice,the device not only exhibits various synaptic plasticity(long-and short-term plasticity)and typical biological features(pain-perceptual nociceptors and associative learning),but also has a low synaptic event response voltage(100 mV)and a low energy consumption(0.92 pJ)for a synaptic event.A dissociation-adsorptionmigration-binding model is proposed to elaborate the resistance switching mechanism,which is corroborated by density functional theory calculations and *** addition,an artificial neural network(ANN)based on mos_(2) ISDs is simulated for the recognition of the MNIST handwritten *** deviation of the recognition accuracy is less than 8%compared to the ideal floating-point numeric *** results provide a new strategy for fabricating high-performance ISDs for neuromorphic computing.

关键词： 2D materials Monolayer Molybdenum disulfide Synapses Neuromorphic computing

铝栅和多晶硅栅mos电容器由辐照引起的空穴俘获与界面态特性

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微电子学 1986年第5期 54-60+53页

作者： z.Shanfield ,成福康

采用受热激发电流和高频C—V测量技术,研究了mos电容器中辐照引起的空穴俘获和界面态与器件加工的相互关系。我们发现、多晶硅栅的制备使研究的所有栅氧化物都酷似用氢氧火成法生长的那样。研究了氧化后退火(POA)在形成空穴和产生界面... 详细信息

采用受热激发电流和高频C—V测量技术,研究了mos电容器中辐照引起的空穴俘获和界面态与器件加工的相互关系。我们发现、多晶硅栅的制备使研究的所有栅氧化物都酷似用氢氧火成法生长的那样。研究了氧化后退火(POA)在形成空穴和产生界面态的过程中所起的作用。从测量结果可以看出,POA使可变成空穴陷阱的二氧化硅的键“变弱”,并且在有OH时导致某种空穴陷阱的湮灭,同时又产生一些新种类的空穴陷阱和界面态。讨论了可能的模型和界面态分布。我们还发现,用中带电压漂移来测量这些mos器件中的空穴俘获并不都是有效的。

关键词：界面态辐照加固氧化层铝栅表面层多晶硅栅 mos 辐照电器电容器

用于实现大信号mos可调跨导器的新的线性化技术

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南邮科技译丛 1990年第4期 51-54页

作者： Wang,z 谈春梅

Modification of optical and electrical properties of sol-gel-derived TiO2-doped zrO2 gate dielectrics by annealing temperature

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Modification of optical and electrical properties of sol-gel...

All-silicon carrier accumulation modulator based on a lateral metal-oxide-semiconductor capacitor

安徽省第四届（2016年）“卓凌杯”真空科技青年创新大赛暨学术研讨会

作者： D.Q.Xiao G.He J.Gao J.G.Lv z.Q.Sun School of physics and Materials Science Radiation Detection Materials & Devices Lab Anhui University School of Sciences Anhui University of Science and Technology Department of Physics and Electronic Engineering Hefei Normal University

In this letter, annealing temperature dependence on the structure, band gap energy and electrical properties of TiO doped zrO gate dielectrics deposited by sol-gel method at low temperature were systemically investigated. The crystalline temperature of TiO doped zrO is up to 600 o C. The transmittance and band gap value of the zrTiO film were about 75% and 4.0 e V,respectively. 300 o C-annealed zrTiO mos capacitor with high dielectric constant of 34.9, a small hysteresis value of 0.004 and low leakage current density of 2.7×10 A/cm were obtained. The dominant conduction mechanisms of Al/zrTiO/n-Si mos structures were schottky emission and ohmic conduction in the low electric field and direct tunneling in the high electric field. As a result,it can be concluded that sol-gel derived zrTiO gate dielectric displays potential application as is a promising candidate in future mos electronic devices.

关键词： High-k gate dielectrics Optical constant Electrical properties Ti incorporation Sol-gel Conduction mechanisms

来源： cnki会议评论

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Photonics Research 2018年第5期6卷 373-379页

作者： KAPIL DEBNATH DAVID J.THOMSON WEIWEI zHANG ALI z.KHOKHAR CALLUM LITTLEJOHNS JAMES BYERS LORENzO MASTRONARDI MUHAMMAD K.HUSAIN KOUTA IBUKURO FREOERIC Y.GARDES GRAHAM T,REED SHINICHI SAITO Optoelectronics Research Centre University of SouthamptonSouthampton S017 1B JUK Faculty of Physical Sciences and Engineering University of SouthamptonSouthampton SO17 1BJUK

In silicon photonics, the carrier depletion scheme has been the most commonly used mechanism for demonstrat- ing high-speed electro-optic modulation. However, in terms of phase modulation efficiency, carrier- accumnlation-based devices potentially offer almost an order of carrier depletion. Previously reported accumulation modulator magnitude improvement over those based on designs only considered vertical metal-oxide- semiconductor （mos） capacitors, which imposes serious restrictions on the design flexibility and integratability with other photonic components. In this work, for the first time to our knowledge, we report experimental demonstration of an all-silicon accumulation phase modulator based on a lateral mos capacitor. Using a Mach-zehnder interferometer modulator with a 500-μm-long phase shifter, we demonstrate high-speed modulation up to 25 Gbit/s with a modulation efficiency （V πLπ） of 1.53 V·cm.

关键词： All-silicon carrier accumulation modulator a lateral metal-oxide-semiconductor capacitor

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饲料中不同甘露寡聚糖水平对火鸡生长性能和胃肠道代谢反应的影响

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饲料博览（技术版） 2007年第6期 61-61页

作者： Juskiewicz J zdunczyk z Jankowski J

通过4个试验，研究了饲料中甘露寡聚糖（mos）水平对火鸡不同生长发育阶段生产性能以及胃肠道健康状况的影响。给火鸡饲喂含不同水平mos（0．1～1．0）的饲料，分别在饲喂后4，8，16周测定火鸡的生长、饲料转化率以及大肠组织参数。结... 详细信息

通过4个试验，研究了饲料中甘露寡聚糖（mos）水平对火鸡不同生长发育阶段生产性能以及胃肠道健康状况的影响。给火鸡饲喂含不同水平mos（0．1～1．0）的饲料，分别在饲喂后4，8，16周测定火鸡的生长、饲料转化率以及大肠组织参数。结果表明：饲喂后4周和8周，不同水平mos（高至0．5％）饲料对火鸡的生产性能没有显著影响；但以中等和高水平mos添加量的饲料饲喂16周后，

关键词：甘露寡聚糖火鸡生长性能胃肠道代谢

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棉铃虫的生物学进一步研究

昆虫学报 1962年第1期 71-82页

作者：孟祥玲张广学任世珍

继续1958年棉铃虫研究工作报告之后,1959—1960年又进一步在湖北、河南和云南等省作了研究,本文主要包括棉铃虫的世代分布带,晚秋、冬春活动情况,不同饲料对生长发育的影响,成虫对寄主植物的选择,成虫和幼虫活动的规律性,大发生的特点... 详细信息

继续1958年棉铃虫研究工作报告之后,1959—1960年又进一步在湖北、河南和云南等省作了研究,本文主要包括棉铃虫的世代分布带,晚秋、冬春活动情况,不同饲料对生长发育的影响,成虫对寄主植物的选择,成虫和幼虫活动的规律性,大发生的特点和防治关键。其发生世代大致可分四个地理带:1.40°N以北,约发生3代;2.32-40°N是4代区;3.25-32°N是5代区;4.25°N以南一般6代,个别地区7代。如化蛹后5天以上其眼域外缘的4个小斑点没有变化,即为休眠蛹。不同食料条件对成虫和幼虫生长发育影响很大。幼虫取食植物的繁殖器官,营养良好,则死亡率低、生长快、蛹较重、成虫繁殖力也高。成虫补充营养不同,其产卵量有显著差异,喂以棉花花粉加10％蜂蜜水产卵最高,单喂10—30％蔗糖水也很好,蔗糖太浓或单喂各种花产卵都降低,喂以植物营养器官则产卵很少或不产卵。成虫对不同寄主植物有选择性。可分为取食寄主、产卵寄主、取食兼产卵寄主。如大葱、洋葱等则仅取食而不产卵;而豌豆等是产卵寄主,未见成虫取食;棉花等以产卵为主;向日葵等则以取食为主,产卵较少。成虫产卵对棉株生长势也有选择,一般棉株生长茂盛,颜色浓绿、组织幼嫩、蕾、花和嫩叶多则产卵多,反之则少。成虫昼夜活动有一定规律性,从飞翔看来,可分为三个主要阶段:黄

关键词：棉铃虫棉田幼虫飞翔棉铃实夜蛾棉花害虫寄主植物取食生物学