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Nuclear Science and Techniques 2019年第3期30卷 97-104页

作者： Zhan-Gang Zhang yun Huang yun-fei en Zhi-Feng Lei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute

Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.

关键词： Proton Single-event effect Threshold LET Monte Carlo simulation

Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool

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Chinese Physics B 2018年第6期27卷 336-340页

作者： Zhi-Feng Lei Zhan-Gang Zhang yun-fei en yun Huang Key Laboratory of Low Dimensional Materials ＆ Application Technology of Ministry of Education Xiangtan University Xiangtan 411100 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China

In this paper, a simulation tool named the neutron-induced single event effect predictive platform（NSEEP^2） is proposed to reveal the mechanism of atmospheric neutron-induced single event effect（SEE） in an electronic device, based on heavy-ion data and Monte-Carlo neutron transport simulation. The detailed metallization architecture and sensitive volume topology of a nanometric static random access memory（SRAM） device can be considered to calculate the real-time soft error rate（RTSER） in the applied environment accurately. The validity of this tool is verified by real-time experimental results. In addition, based on the NSEEP^2, RTSERs of 90 nm–32 nm silicon on insulator（SOI） and bulk SRAM device under various ambient conditions are predicted and analyzed to evaluate the neutron SEE sensitivity and reveal the underlying mechanism. It is found that as the feature size shrinks, the change trends of neutron SEE sensitivity of bulk and SOI technologies are opposite, which can be attributed to the different MBU performances. The RTSER of bulk technology is always 2.8–64 times higher than that of SOI technology, depending on the technology node, solar activity, and flight height.

关键词： atmospheric neutron single event effects soft error rate Monte-Carlo simulation

Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

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Chinese Physics B 2018年第6期27卷 524-530页

作者： Li Wang Yuan Liu Kui-Wei Geng Ya-Yi Chen yun-fei en School of Electronic and Information engineering South China University of TechnologyGuangzhou 510640China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREIGuangzhou 510610China Key Laboratory of Silicon Device Technology Chinese Academy of SciencesBeijing 100029China

The instabilities of indium–zinc oxide thin film transistors under bias and/or illumination stress are studied in this paper. Firstly, illumination experiments are performed, which indicates the variations of current–voltage characteristics and electrical parameters（such as threshold voltage and sub-threshold swing） are dominated by the stress-induced ionized oxygen vacancies and acceptor-like states. The dependence of degradation on light wavelength is also investigated. More negative shift of threshold voltage and greater sub-threshold swing are observed with the decrease of light ***, a negative bias illumination stress experiment is carried out. The degradation of the device is aggravated due to the decrease of recombination effects between ionized oxygen vacancies and free carriers. Moreover, the contributions of ionized oxygen vacancies and acceptor-like states are separated by using the mid-gap method. In addition, ionized oxygen vacancies are partially recombined at room temperature and fully recombined at high temperature. Finally, low-frequency noise is measured before and after negative bias illumination stress. Experimental results show few variations of the oxide trapped charges are generated during stress, which is consistent with the proposed mechanism.

关键词： indium-zinc oxide thin film transistor illumination low frequency noise

Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

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Chinese Physics Letters 2018年第4期35卷 123-126页

作者： Ya-Yi Chen Yuan Liu Zhao-Hui Wu Li Wang Bin Li yun-fei en Yi-Qiang Chen School of Electronic and Information engineering South China University of Technology Cuangzhou 510640 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Produce Reliability and Environmental Testing Research Institute Guangzhou 510610

Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2 O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge＇s parameter is about 1.18×10^-*** the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10^18 cm^-3eV^-1.

关键词： Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator Al

Regulation and function of endoplasmic reticulum autophagy in neurodegenerative diseases

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Neural Regeneration Research 2025年第1期20卷 6-20页

作者： Xiu-yun Zhao De-en Xu Ming-Lei Wu Ji-Chuan Liu Zi-Ling Shi Quan-Hong Ma Department of Neurology and Clinical Research Center of Neurological Disease the Second Affiliated Hospital of Soochow UniversitySuzhouJiangsu ProvinceChina Institute of Neuroscience&Jiangsu Key Laboratory of Translational Research and Therapy for Neuro-Psycho-Diseases Soochow UniversitySuzhouJiangsu ProvinceChina Department of Neurology Jiangnan University Medical CenterWuxiJiangsu ProvinceChina

The endoplasmic reticulum,a key cellular organelle,regulates a wide variety of cellular *** reticulum autophagy,one of the quality control systems of the endoplasmic reticulum,plays a pivotal role in maintaining endoplasmic reticulum homeostasis by controlling endoplasmic reticulum turnover,remodeling,and *** this review,we briefly describe the endoplasmic reticulum quality control system,and subsequently focus on the role of endoplasmic reticulum autophagy,emphasizing the spatial and temporal mechanisms underlying the regulation of endoplasmic reticulum autophagy according to cellular *** also summarize the evidence relating to how defective or abnormal endoplasmic reticulum autophagy contributes to the pathogenesis of neurodegenerative *** summary,this review highlights the mechanisms associated with the regulation of endoplasmic reticulum autophagy and how they influence the pathophysiology of degenerative nerve *** review would help researchers to understand the roles and regulatory mechanisms of endoplasmic reticulum-phagy in neurodegenerative disorders.

关键词： autophagy endoplasmic reticulum endoplasmic reticulum autophagy endoplasmic reticulum quality control system endoplasmic reticulum receptors endoplasmic reticulum-associated degradation neurodegeneration neurodegenerative disease selective autophagy unfolded protein response

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基于耦合界面键合效应的石墨烯磨损研究

原子与分子物理学报 2025年第6期42卷 66-75页

作者：郑云飞卢艳武汉科技大学冶金装备及其控制教育部重点实验室武汉430081 武汉科技大学机械传动与制造工程湖北省重点实验室武汉430081 武汉科技大学精密制造研究院武汉430081

石墨烯作为二维固体润滑材料,其超滑特性不仅是物理作用结果,其化学键结构机制下的摩擦化学现象,是深入理解石墨烯摩擦性能的关键.本文采用分子动力学(MD)方法构建了多重层数石墨烯增强不同粗糙形貌的金属基底模型,实现了其与金刚石尖... 详细信息

石墨烯作为二维固体润滑材料,其超滑特性不仅是物理作用结果,其化学键结构机制下的摩擦化学现象,是深入理解石墨烯摩擦性能的关键.本文采用分子动力学(MD)方法构建了多重层数石墨烯增强不同粗糙形貌的金属基底模型,实现了其与金刚石尖端滑动过程的动态分析,揭示了考虑尖端与石墨烯之间存在界面键时石墨烯层的理化耦合作用下的磨损机理.研究结果表明:当考虑金刚石尖端与石墨烯之间化学键合时,石墨烯发生磨损破裂的临界载荷相对于不考虑界面化学键时的值减小,这是由于界面键的形成会剥离石墨烯导致石墨烯断裂所致;金属基底的粗糙度也是决定石墨烯发生磨损破裂时临界载荷的重要因素之一,当粗糙度增大,临界载荷减小,同时通过增加石墨烯层的层数(增韧)来提高石墨烯发生磨损破裂失效的临界载荷.

关键词：石墨烯层界面键分子动力学磨损破裂

An energy minimization algorithm based on distributed dynamic clustering for long term evolution(LTE) heterogeneous networks

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Science China(Information Sciences) 2015年第4期58卷 103-114页

作者： TONG en DING fei PAN ZhiWen YOU Xiao Hu National Mobile Communications Research Laboratory Southeast University Research and Development Center China Mobile Group Jiangsu Co. Ltd.

energy saving has become an important issue in wireless communications from both environment and economic considerations. In this paper, an energy minimization algorithm based on distributed dynamic clustering(DDCEM) with lower complexity, higher performance, and better adaptability for heterogeneous network(Het Net) is proposed. A Het Net could be divided into several clusters, which is defined as one group of a network node and users served by the node. A energy efficient user association, which dynamically changes according to real-time energy efficiency(EE) evaluation with traffic load and location distribution of each cluster, can be employed to save consumed energy. Then, the optimal sleeping relay is found as follows. First,the sleeping probability cost of each relay station(RS) is computed and ranked based on the user traffic and the position distribution of each cluster, and the relay with minimum sleeping probability is selected to be switched off. Hence, the sleep node is selected taking into account the traffic load and location of the Evolved Node B(e NB) and all the RSs. The complexity of the algorithm is greatly reduced because the user association operation and network load evaluation are fulfilled cluster by cluster. Simulation results show that the proposed DDCEM strategy offers EE gain with low system complexity.

关键词： energy efficiency heterogeneous network traffic cluster sleeping probability cost

Microstructural evolution and mechanical properties of Ni-45Ti-5Al-2Nb-1Mo alloy subjected to different heat treatments

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Rare Metals 2023年第8期42卷 2774-2780页

作者： Xiao-yun Song Yan Li fei Zhang State Key Laboratory of Nonferrous Metals and Processes GRIMAT Engineering Institute Co.LtdBeijing 101407China School of Materials Science and engineering Beihang UniversityBeijing 100191China

The effects of solution and aging heat treatment on microstructural evolution and room temperature tensile properties for as-forged Ni-45Ti-5Al-2Nb-1Mo alloy were investigated through scanning electron microscopy(SEM),transmission electron microscopy(TEM)and tensile *** results show that the microstructure of solution-treated alloy comprises NiTi matrix,Ti_(2)Ni and(Nb,Ti)ss *** aging treatment at 700℃for 6 and100 h,the distribution of Ti_(2)Ni and(Nb,Ti)ss precipitates increases in *** new type of precipitate is observed in the specimen aged at 700℃.After aging at800℃for 100 h,numerous nanosized Ni_(2)TiAl phases are precipitated within the *** and aging treatments improve the tensile properties at room *** strength and ductility are improved after solution treatment at 1100℃plus aging treatment at 800℃for 6 h or 700℃for 100 *** aging time prolonging to 100 h at 800℃,the precipitation of fine Ni2TiAl particles leads to the improvement in tensile strength and deterioration of elongation.

关键词： NiTi-Al-based alloy Intermetallics Microstructure Mechanical properties Heat treatment

Achievable rate for three-node discrete memoryless relay channel with generalized feedbacks

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The Journal of China Universities of Posts and Telecommunications 2012年第2期19卷 15-21页

作者： LANG fei WANG Bao-yun College of Telecommunications and Information engineering Nanjing University of Posts and TelecommtmicationsNanjing 210003China

This paper studies the achievable rate for three-node discrete memoryless relay channel. Specifically in this mode, we explore two generalized feedbacks simultaneously： the source node actively collects feedback signals from the channel; and at the same time, the destination node actively transmits feedback signals to the relay node. These two feedback signals, which are called generalized feedback overheard from the channel that is likely to be noisy, induce that all the three nodes are in full duplex mode. The basic coding strategies of Cover and El Gamal are applied to the relay-source feedback transmission by the source forwarding the compressions of the channel output sequences at the relay node to the destination, and are also applied to the destination-relay feedback transmission to improve the decoding ability at the relay. Based on Cover and El Gamal coding, a new coding scheme adopting rate splitting and four-block Markov superposition encoding is proposed and the corresponding achievable rate is achieved. The proposed scheme is able to exploit two feedbacks simultaneously which can effectively eliminate underlying transmission bottlenecks for the channels. The derived achievable rate result generalizes several previously known results by including them as special cases.

关键词： achievable rate relay feedback Shannon theory

Lithiophilic interface guided transient infiltration of molten lithium for stable 3D composite lithium anodes

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Nano Research 2023年第6期16卷 8297-8303页

作者： Lan-Xing Li yun-Nuo Li fei-fei Cao Huan Ye College of Science Huazhong Agricultural UniversityWuhan 430070China

Fabricating three-dimensional(3D)composite lithium anodes via thermal infusion effectively addresses uncontrollable Li deposition and large volume ***,potential risks due to the long wetting time and high melting point remain a critical yet unconsidered ***,we report a stable 3D composite Li anode by infusing molten Li into a 3D scaffold within 3 s at 220℃.The key-enabling technique is the growth of a lithiophilic Mg-Al double oxide(LDO)nanosheet array layer on the *** in-situ formed lithiophilic alloy,combined with the capillary forces from the nanosheet arrays,enabled the transient infiltration of molten *** addition,the formed high ionic-conductivity Li phase can help construct a robust solid electrolyte interphase(SEI),stabilize the Li anode/electrolyte interface,and guide uniform Li *** 3D composite anode exhibited a long cycling life of 1,000 h under a current density of 1 mA·cm^(−2)and over 1,600 h under a current density of 2 mA·cm^(−2)with a high areal capacity of 4 mAh·cm^(−2)in Li/Li symmetric *** 3D composite anodes paired with high areal capacity LiFePO_(4)(LFP)and S cathodes demonstrate its practical application feasibility.

关键词： lithium metal battery composite Li anode interfacial layer thermal infusion long cycling life