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Brightness and Lifetime Improved Light-Emitting Diodes from Sr-Doped Quasi-Two-Dimensional Perovskite Layers

Tsinghua Science and Technology 2023年第1期28卷 131-140页

作者： Dan Chen Taoran Liu yuhua zuo Chuanbo Li Jun Zheng Zhi Liu Baoyu Liu Buwen Cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Science Minzu University of ChinaBeijing 100081China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for SensorMOE Key Laboratory for Modern Measurement and Control Technologyand Beijing Information Science and Technology UniversityBeijing 100101China

Green Perovskite Light-Emitting Diodes(PeLEDs)have attracted wide attention for full spectrum ***,the inferior film morphology and luminescence property of quasi-two-dimensional(quasi-2D)perovskite layers limit the photoelectric property of the *** this paper,the effect of strontium(Sr)doped in quasi-2D perovskite layers is investigated to obtain a high-quality active *** morphologies and optical properties of Sr-doped quasi-2D perovskite films with different concentrations are *** the addition of strontium,more low-dimensional-layer perovskite phases(n D 2 and n D 3)appear in quasi-2D perovskite films,providing efficient intraband carrier funneling pathway and facilitating radiative *** photoluminescence(PL)peak intensity of optimized Sr-doped quasi-2D perovskite layers increases 50%compared with the non-strontium ***,green PeLEDs based on a Sr-doped quasi-2D perovskite layer reach a maximum luminance(Lmax)of 2943.77 cd/m^(2),which is three times of the control *** electroluminescence(EL)peaks of Maximum External Quantum Efficiency(MEQE)and Lmax of Sr-doped PeLEDs exhibite a slight shift,indicating the excellent stability and performance of Sr-doped *** optimized device can continuously operate for 360 s at MEQE driving voltage,resulting in a half-lifetime of60 s,which is 3-fold greater than that of the control PeLEDs.

关键词： Perovskite Light-Emitting Diodes(PeLED) Sr-doped brightness improved lifetime increased

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Fabrication of Anti-reflecting Si Nano-structures with Low Aspect Ratio by Nano-sphere Lithography Technique

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Nano-Micro Letters 2013年第1期5卷 18-25页

作者： Shenghua Sun Peng Lu Jun Xu Ling Xu Kunji Chen Qimin Wang yuhua zuo National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering Nanjing University State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsCAS

Nano-structured photon management is currently an interesting topic since it can enhance the optical absorption and reduce the surface reflection which will improve the performance of many kinds of optoelectronic devices, such as Si-based solar cells and light emitting diodes. Here, we report the fabrication of periodically nano-patterned Si structures by using polystyrene nano-sphere lithography technique. By changing the diameter of nano-spheres and the dry etching parameters, such as etching time and etching power, the morphologies of formed Si nano-structures can be well controlled as revealed by atomic force microscopy.A good broadband antireflection property has been achieved for the formed periodically nano-patterned Si structures though they have the low aspect ratio(<0.53). The reflection can be significantly reduced compared with that of flat Si substrate in a wavelength range from 400 nm to 1200 nm. The weighted mean reflection under the AM1.5 solar spectrum irradiation can be as low as 3.92% and the corresponding optical absorption is significantly improved, which indicates that the present Si periodic nano-structures can be used in Si-based thin film solar cells.

关键词： Nano-sphere lithograph Nano-patterned Si structures Antireflection

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Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates

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Photonics Research 2020年第6期8卷 899-903页

作者： LINZHI PENG Xu LI ZHI LIU XIANGQUAN LIU JUN ZHENG CHUNLAI XUE yuhua zuo BUWEN CHENG State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeiing 100049China Beijing Academy of Quantum Information Sciences Bejing 100193China

A horizontal p-i-n ridge waveguide emitter on a slion(100)substrate with a Gen,g1Sno.c9/Ge multi quantum-well(MQW)active layer was fabricated by molecular beam *** device structure was designed to reduce light absorption of metal electrodes and improve injection ***(EL)at a wavelength of 2160 nm was observed at room *** calculations indicate that the emission peak corresponds well to the direct bandgap transition(nr-mHr).The light output power was about 2.0μW with an injection current density of 200 kA/cm^*** results show that the horizontal GeSn/Ge MQW ridge waveguide emiters have great pros-pects for group-IV light sources.

关键词： waveguide temperature. GeSn

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Interface Modification of TiO_(2)Electron Transport Layer with PbCl_(2)for Perovskiote Solar Cells with Carbon Electrode

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Tsinghua Science and Technology 2022年第4期27卷 741-750页

作者： Abolfazl Amraeinia yuhua zuo Jun Zheng Zhi Liu Guangze Zhang Liping Luo Buwen Cheng Xiaoping Zou Chunbo Li Key Laboratory on Integrated Optoelectronics Institute of SemiconductorChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for SensorMOE Key Laboratory for Modern Measurement and Control TechnologyBeijing Information Science and Technology UniversityBeijing 100101China School of Science Minzu University of ChinaBeijing 100081China

Perovskite Solar Cells(PSCs)have attracted considerable attention because of their unique features and high ***,the stability of perovskite solar cells remains to be *** this study,we modified the TiO_(2)Electron Transport Layer(ETL)interface with PbCl_(2).The efficiency of the perovskite solar cells with carbon electrodes increased from 11.28%to 13.34%,and their stability obviously *** addition of PbCl_(2)had no effect on the morphology,crystal structure,and absorption property of the perovskite absorber ***,it affected the band energy level alignment of the solar cells and accelerated the electron extraction and transfer at the interface between the perovskite layer and the ETL,thus enhancing the overall photovoltaic *** interfacial modification of ETL with PbCl_(2)is a promising way for the potential commercialization of low-cost carbon electrode-based perovskite solar cells.

关键词： Perovskite Solar Cell(PSC) Electron Transport Layer(ETL) electron and hole recombination modification stability

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30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application

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Photonics Research 2021年第4期9卷 494-500页

作者： Xiuli Li Linzhi Peng Zhi Liu Zhiqi Zhou Jun Zheng Chunlai Xue yuhua zuo Baile Chen Buwen Cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Information Science and Technology ShanghaiTech UniversityShanghai 201210China Beijing Academy of Quantum Information Sciences Beijing 100193China

We report the demonstration of a normal-incidence p-i-n germanium-tin(Ge_(0.951)Sn_(0.049))photodetector on silicon-on-insulator substrate for 2μm wavelength *** DC and RF characteristics of the devices have been characterized.A dark current density under−1 V bias of approximately 125 mA/cm^(2) is achieved at room temperature,and the optical responsivity of 14 mA/W is realized for illumination wavelength of 2μm under−1 V reverse *** addition,a 3 dB bandwidth(f_(3dB))of around 30 GHz is achieved at−3 V,which is the highest reported value among all group III–V and group IV photodetectors working in the 2μm wavelength *** work illustrates that a GeSn photodetector has great prospects in 2μm wavelength optical communication.

关键词： 2μm GeSn SOI

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Recent progress in GeSn growth and GeSn-based photonic devices

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Journal of Semiconductors 2018年第6期39卷 76-81页

作者： Jun Zheng Zhi Liu Chunlai Xue Chuanbo Li yuhua zuo Buwen Cheng Qiming Wang Institute of Semiconductors Chinese Academy of Sciences College of Materials Science and Optoelectronic Technology University of Chinese Academy of Sciences

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content ex- ceeds 6%. It shows great potential for laser use in optoelectronic integration circuits （OEIC） on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photode- tectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the mono- lithic integration of Si photonic circuits by the complementary metal-oxide-semiconductor （CMOS） technology.

关键词： GeSn material growth Si photonics optoelectronic integration

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Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors

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Photonics Research 2022年第7期10卷 1567-1574页

作者： XIANGQUAN LIU JUN ZHENG CHAOQUN NIU TAORAN LIU QINXING HUANG MINGMING LI DIANDIAN ZHANG YAQING PANG ZHI LIU yuhua zuo BUWEN CHENG State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

GeSn detectors have attracted a lot of attention for mid-infrared Si photonics,due to their compatibility with Si complementary metal oxide semiconductor *** GeSn bandgap can be affected by Sn composition and strain,which determines the working wavelength range of *** the Sn content gradient GeSn layer structure,the strain of GeSn can be controlled from fully strained to completely *** this work,the strain evolution of GeSn alloys was investigated,and the effectiveness of gradually increasing Sn composition for the growth of high-Sn-content GeSn alloys was *** GeSn thick films with Sn composition up to 16.3%were grown,and GeSn photodetectors were *** 77 K,the photodetectors showed a cutoff wavelength up to 4.2μm and a peak responsivity of 0.35 A/W under 1 V at 2.53μ*** results indicate that GeSn alloys grown on a Sn content gradient GeSn structure have promising application in mid-infrared detection.

关键词： content gradient complementary

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High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect

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Journal of Semiconductors 2017年第11期38卷 55-59页

作者： Wenzhou Wu Buwen Cheng Jun Zheng Zhi Liu Chuanbo Li yuhua zuo Chunlai Xue State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences

This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the-3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and-3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier *** the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer.

关键词： avalanche photodiode high-frequency tunneling effect high gain-bandwidth product fiber optic communication

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Ge-on-Si for Si-based integrated materials and photonic devices

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Frontiers of Optoelectronics 2012年第1期5卷 41-50页

作者： Weixuan HU Buwen CHENG Chunlai XUE Shaojian SU Haiyun XUE yuhua zuo Qiming WANG State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

This paper reviews the recent progress in photonic devices application of Ge-on-Si. Ge-on-Si materials and optical devices are suitable candidates for Si-based optoelectronic integration because of the mature epitaxial technique and the compatibility with Si complementary metal-oxide-semiconductor （CMOS） technology. Recently, the realities of electric-pump Ge light emitting diode （LED） and optical-pump pulse Ge laser, Ge quantum well modulator based on quantum Stark confined effect, waveguide Ge modulator based on Franz-Keldysh （FK） effect, and high performance near-infrared Ge detector, rendered the Si-based optoelectronic integration using Ge photonic devices. Ge-on-Si material is also an important platform to grow other materials on it for Si- based optoelectronic integration. InGaAs and GeSn have been grown on the Ge-on-Si. InGaAs LED and GeSn photodetector have been successfully fabricated as well.

关键词： optoelectronic integration Ge photonicdevice

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75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique

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Journal of Semiconductors 2023年第1期44卷 79-84页

作者： Xiuli Li Yupeng Zhu Zhi Liu Linzhi Peng Xiangquan Liu Chaoqun Niu Jun Zheng yuhua zuo Buwen Cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking *** the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical *** 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are *** this work,the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated,which indicates the high-speed performance of photodetectors using the inductive-gainpeaking technique.

关键词： germanium photodetectors inductive-gain-peaking optical interconnection

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