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Microsystems & Nanoengineering 2021年第3期7卷 51-62页

作者： Yunqian He yuelin wang Tie Li Science and Technology on Microsystem Laboratory Shanghai Institute of Microsystem and In formation TechnologyChinese Academy of Sciences200050 ShanghaiChina University of Chinese Academy of Sciences 100049 BeijingChina

The heat conduction and infrared absorption properties of the dielectric film have a great influence on the thermopile *** the dielectric film,reducing its contact area with the silicon substrate,or adding high-absorptivity nano materials has been proven to be effective in improving ***,these methods may result in a decrease in the structural mechanical strength and in creases in the fabrication complexity and *** this work,a new performa nce-enha ncement strategy for thermopiles by simultaneously con trolling the heat conduction and infrared absorption with a TExtured Dielectric(TEDI)film is developed and *** TEDI film is formed in situ by a simple hard-molding process that is compatible with the fabrication of traditional *** to the control FLat Dielectric(FLDI)film,the intrinsic thermal conductance of the TEDI film can be reduced by〜18-30%,while the in fra red absorptio n can be increased by-7-13%.Corresp on dingly,the responsivity and detectivity of the fabricated TEDI film-based thermopile can be significantly enhanced by〜38-64%.An optimized TEDI film-based thermopile has achieved a responsivity of 156.89 V-W_1 and a detectivity of 2.16×10^(8)cm-Hz^(1/2)·W^(-1),while the response time constant can remain<12 *** results exhibit the great potential of using this strategy to develop high-performance thermopiles and enhance other sensors with heat transfer and/or infrared absorption mechanisms.

关键词： film absorption dielectric

Wafer-level and highly controllable fabricated silicon nanowire transistor arrays on （111） silicon-on-insulator （SOl） wafers for highly sensitive detection in liquid and gaseous environments

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Nano Research 2018年第3期11卷 1520-1529页

作者： Xun Yang Anran Gao yuelin wang Tie Li Science and Technology on Micro-system Laboratory Shanghai Institute of Microsystem and Information Technology ChineseAcademy of Sciences Shanghai200050 China University of Chinese Academy of Sciences (UCAS) Beijing 100190 China

This paper presents a wafer-level and highly controllable fabrication technology for silicon nanowire field-effect transistor （SiNW-FET arrays） on （111） silicon- on-insulator （SOI） wafers. Herein, 3,000 SiNW FET array devices were designed and fabricated on 4-inch wafers with a rate of fine variety of more than 90% and a dimension deviation of the SiNWs of less than ＋ 20 nm in each array. As such, wafer-level and highly controllable fabricated SiNW FET arrays were realized. These arrays showed excellent electrical properties and highly sensitive determination of pH values and nitrogen dioxide. The high-performance of the SiNW FET array devices in liquid and gaseous environments can enable the detection under a wide range of conditions. This fabrication technology can lay the foundation for the large-scale application of SiNWs.

关键词： silicon nanowire array top-down wafer-leveLhigh-controllable high-performance

MEMS-based thermoelectric infrared sensors： A review

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Frontiers of Mechanical Engineering 2017年第4期12卷 557-566页

作者： Dehui XU yuelin wang Bin XIONG Tie LI Science and Technology on Microsystem Laboratory Shanghai Instituteof Microsystem and Information Technology CAS Shanghai 200050China

In the past decade, micro-electromechanical systems （MEMS）-based thermoelectric infrared （IR） sensors have received considerable attention because of the advances in micromachining technology. This paper presents a review of MEMS-based thermoelectric IR sensors. The first part describes the physics of the device and discusses the figures of merit. The second part discusses the sensing materials, thermal isolation micro- structures, absorber designs, and packaging methods for these sensors and provides examples. Moreover, the status of sensor implementation technology is examined from a historical perspective by presenting findings from the early years to the most recent findings.

关键词： thermoelectric infrared sensor CMOS-MEMS thermopile micromachining wafer-level package

Effect of modified MgAl-LDH coating on corrosion resistance and friction properties of aluminum alloy

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Chinese Journal of Chemical Engineering 2023年第11期63卷 81-95页

作者： Zuokai wang Zhuangzhuang Xiong Xinxin Li Di wang yuelin wang Shangcheng Wu Lixia Ying Zhideng wang Guixiang wang College of Materials Science and Chemical Engineering Harbin Engineering UniversityHarbin 150001China College of Mechanical and Electrical Engineering Harbin Engineering UniversityHarbin 150001China College of Materials Science and Chemical Engineering Yantai Research Institute of Harbin Engineering UniversityYantai 265503China

The in-situ growing approach was utilized in this article to construct the magnesium–aluminum layered double hydroxide(MgAl-LDH)film on the surface of a 1060 aluminum anodized *** improve the corrosion resistance and friction qualities of aluminum alloy,the MgAl-LDH coating was treated using stearic acid(SA)and thiourea(TU).The aluminum substrate and anodized aluminum film layer corroded to varying degrees after 24 h of immersion in 3.5%(mass)NaCl solution,while the modified hydrotalcite film layer continued to exhibit the same microscopic morphology even after being immersed for 7 *** results show that the synergistic action of thiourea and stearic acid can effectively improve the corrosion resistance of the MgAl-LDH *** tribological testing reveals that the hydrotalcite film layer and the modified film layer lowered the friction coefficient of the anodized aluminum surface *** results of the simulations and experiments demonstrate that SA forms the dense LDH-TU interlayer film layer by exchanging NO_(3)^(-)ions between TU layers on the one hand and the LDH-SA film layer by adsorption on the surface of LDH on the ***,these two processes create LDH-TUSA,which can significantly increase the substrate’s corrosion *** synergistically modified superhydrophobic and retardant hydrotalcite film layer offers a novel approach to the investigation of wear reduction and corrosion protection on the surface of aluminum and its alloys.

关键词： Anodizing Layered double hydroxide Superhydrophobic Corrosion resistance Tribological properties

A MEMS Device for in-situ TEM Test of SCS Nanobeam

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Science China(Technological Sciences) 2008年第9期51卷 1491-1496页

作者： JIN QinHua wang yuelin LI Tie LI XinXin XU FangFang Shanghai Institute of Microsystem and Information Technology Chinese Academy of SciencesShanghai 200050China Microfabrication of Ministry of Education Institute of Micro and Nano Science and TechnologyShanghai Jiaotong UniversityShanghai 200030China Shanghai Institute of Ceramics Chinese Academy of SciencesShanghai 200050China

In-situ tensile testing in TEM (transmission electron microscopy) is a useful tool for studying mechanical properties of nano-structures because it can provide quanti-tative information on sample deformation at atomic scale. To facilitate in-situ TEM tensile tests of SCS (single crystal silicon) nanobeam, a MEMS tensile-testing chip was designed and fabricated. The chip was fabricated by means of bulk micro-machining and wafer bonding techniques. An SCS nanobeam, a comb drive ac-tuator, a force sensor beam and an electron beam window were integrated into the chip. With the on-chip comb-drive-actuator stretching the nanobeam and in-situ TEM observation, tensile test on a 90 nm-thick nanobeam was performed and the strain-stress relationship was obtained. The Young's modulus was fitted to be 161 GPa and did not show the size effect.

关键词： MEMS TEM SCS nanobeam in-situ tensile testing

Progress in Silicon Nanowire-Based Field-Effect Transistor Biosensors for Label-Free Detection of DNA

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Chinese Journal of Chemistry 2016年第3期34卷 308-316页

作者： Na Lu Anran Gao Hong Zhou Yi wang Xun Yang yuelin wang Tie Li Science and Technology on Microsystem Laboratory Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China School of Materials Engineering Shanghai University of Engineering Science Shanghai 201620 China

Silicon nanowire （SiNW）, as one-dimensional semiconducting nanomaterial, has been incorporated into the filed-effect transistor （FET） devices to increase the efficacy and signal-to-noise in DNA sensing applications. Due to the advantages of high sensitivity, excellent selectivity, label-free detection, direct electrical readout, and minia- turization, SiNW FET-based DNA sensors have been regarded as an important tool in applications of molecular di- agnostics, DNA sequencing, gene expressions, and drug discovery. Here, we review the recent progress in SiNW- FET sensors for label-free electrical DNA detection. We first introduce the working principle of SiNW-FET DNA sensors, SiNW fabrication technologies, bio-functionalization on nanowire surface, and enhancement of device sen- sitivity. Then we sum up the applications of SiNW sensors in detection of DNA hybridization, infectious viruses, microRNA, genetic change （DNA mutation, DNA methylation, and DNA repair）, and protein-DNA interactions. We address several crucial points of sensing performance including sensitivity, selectivity, and limit of detection. Finally, the perspectives, challenges, and some solutions of the field are also discussed.

关键词： silicon nanowire field-effect transistors label-flee DNA detection

Wafer-level site-controlled growth of silicon nanowires by Cu pattern dewetting

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Nano Research 2015年第8期8卷 2646-2653页

作者： Zhishan Yuan Yunfei Chen Zhonghua Ni yuelin wang Hong Yi Tie Li School of Mechanical Engineering Southeast University Nanjing 210018 China Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments Southeast University Nanjing 211189 China Science and Technology on Microsystem Laboratory Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

An approach for the wafer-level synthesis of size- and site-controlled amorphous silicon nanowires （α-SiNWs） is presented in this paper. Microscale Cu pattern arrays are precisely defined on SiO2 films with the help of photolithography and wet etching. Due to dewetting, Cu atoms shrink to the center of patterns during the annealing process, and react with the SiO2 film to open a diffusion channel for Si atoms to the substrate, α-SiNWs finally grow at the center of Cu patterns, and can be tuned by varying critical factors such as Cu pattern volume, SiO2 thickness, and annealing time. This offers a simple way to synthesize and accurately position a SiNW array on a large area.

关键词： amorphous silicon nanowires (α-SiNWs) wafer-leve Cu pattern dewetting

On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon

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Chinese Science Bulletin 2009年第7期54卷 1143-1151页

作者： BAO XiaoQing GE DaoHan ZHANG Sheng ZHAO Ling JIAO JiWei wang yuelin State Key Laboratory of Transducer Technology National Key Laboratory of Microsystem Technology Shanghai Institute of Microsystem and Information Chinese Academy of SciencesShanghai 200050 China Graduate University of Chinese Academy of Sciences Beijing 100049 China

Via systematic investigation of the anodization of both patterned and unpatterned specimens, phenomena of pronounced discrepancy with respect to pore size, pore density and pore etch-rate were evidenced. Based on the detailed analysis of scanning electron microscope (SEM) micrographs and current-voltage curves, the competition between physical and chemical elements was found to be crucial to understanding the observations. The results indicate that the size, density and growth-speed of pores may act as an evident function of the initial morphology of the sample surface, despite a nearly fixed width of the space charge region. Electric-field effect as well as current-burst-model (CBM) was employed to interpret the underlying mechanism.

关键词：孔隙演化扫描电子显微镜起源空间电荷区阳极氧化系统调查苯丙氨酸电压曲线

Scientific Development for China's Fumed Silica Sector

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China Chemical Reporter 2009年第28期20卷 20-20页

作者： wang yuelin

The development of the fumed silica sector isclosely related to the development of thepolysilicon sector. To solve the silicon tetrachloridedisposal problem, many regions inChina have been launching fumed silica plant... 详细信息

关键词： sector silica thousand launching rubber reasons te

Good Development Opportunities Ahead for Gaseous-Process Silica White

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China Chemical Reporter 2008年第21期19卷 22-22页

作者： wang yuelin

Gaseous-process silica white is an important reinforcing filler and multifunctional *** is extensively used in many sectors includ-ing silicone rubber,rubber,plastics,coatings,inks,pharmaceuticals,papermaking,food,cos... 详细信息

关键词： rubber silicone plastics cosmetics additive reinfo