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Emitter Quality Optimization Using Lightly Doped Phosphorus Diffusion and Thermal Oxide Anneal for Cell Efficiency Improvement in Multi-Crystalline Black Silicon Solar Cells

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Journal of Power and Energy Engineering 2022年第3期10卷 35-47页

作者： Kishan Shetty yudhbir kaushal Nagesh Chikkaiah Chandra Mauli Kumar Tata Power Solar Systems Limited Bangalore India

Improving solar cell performance by increasing solar cell efficiency by various process optimization had always been a simple straight-forward methodology followed in a R&D or in a solar cell manufacturing company. This is also the most cost-effective practice to improve a product performance using the same technology without the need to procure alternative or expensive raw materials or by adopting advanced solar cell processing techniques. Aluminium Back Surface Field (Al-BSF) technology using multi-crystalline wafers (mc-Si) had been a well-established and a dominant product in the solar industry for more than two decades. However, as the industry progresses, the demand for high efficiency solar cells and modules started going up and full area Aluminium BSF based cells suffers from a lot of inherent limitations on cell efficiency. This is primarily due to the intrinsic high density of crystal lattice defects or otherwise called as grain boundary defects present dominantly only in mc-Si wafers. These grain boundaries tends to accumulate several defects and become trap centres which cause high recombination for minority carriers thereby exhibiting lower conversion efficiency and higher dispersion in electrical parameters in batches of tested cells. Years of research using this material have helped to derive the maximum benefits using this mc-Si wafer in producing industrial full area BSF cells and we can say with certainty that the efficiency potential has reached the saturation point with this technology. An interesting development that happened in the area of improving the final product performance using mc-Si wafers at both cell and module level, is by replacing the conventional acid texturing process with an introduction of a nano-texturing process called Metal Catalysed Chemical Etching (MCCE) using specialized chemicals which improves the light trapping capabilities by creation of inverted pyramid texture on the silicon wafer surface and thereby enabling the w

关键词： Lightly Doped Emitter Oxidation Annealing Metal Catalyst Chemical Etching Phosphorus Silicate Glass Diffusion

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Challenges in Processing Diamond Wire Cut and Black Silicon Wafers in Large-Scale Manufacturing of High Efficiency Solar Cells

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Journal of Power and Energy Engineering 2020年第2期8卷 65-77页

作者： Kishan Shetty yudhbir kaushal Nagesh Chikkan D. S. Murthy Chandra Mauli Kumar Tata Power Solar Systems Limited Bangalore India

Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed.

关键词： Diamond Wire Cut Black Silicon Slurry Wafers Amorphous Silicon Additives Etching and Texturization

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