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The action mechanism of the work done by the electric field force on moving charges to stimulate the emergence of carrier generation/recombination in a PN junction

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Applied Mathematics and Mechanics(English Edition) 2024年第6期45卷 1001-1014页

作者： Lingyun GUO Yizhan YANG Wanli YANG yuantai hu Department of Mechanics School of Aerospace EngineeringHubei Key Laboratory of Engineering Structural Analysis and Safety AssessmentHuazhong University of Science and TechnologyWuhan 430074China

It is discovered that the product of the current and the electric field in a PN junction should be regarded as the rate of work(power)done by the electric field force on moving charges(hole current and electron current),which was previously misinterpreted as solely a Joule heating *** clarify that it is exactly the work done by the electric field force on the moving charges to stimulate the emergence of non-equilibrium carriers,which triggers the novel physical *** regards to Joule heat,we point out that it should be calculated from Ohm’s law,rather than simply from the product of the current and the electric *** on this understanding,we conduct thorough discussion on the role of the electric field force in the process of carrier recombination and carrier *** thermal effects of carrier recombination and carrier generation followed are incorporated into the thermal equation of *** present study shows that the exothermic effect of carrier recombination leads to a temperature rise at the PN interface,while the endothermic effect of carrier generation causes a temperature reduction at the *** two opposite effects cause opposite heat flow directions in the PN junction under forward and backward bias voltages,highlighting the significance of managing device heating phenomena in design ***,this study possesses referential significance for the design and tuning on the performance of piezotronic devices.

关键词： piezoelectric semiconductor(PS) work done by electric field force thermal effect piezotronic device resistivity conductivity

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The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields

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Applied Mathematics and Mechanics(English Edition) 2023年第3期44卷 381-396页

作者： Wanli YANG Jinxi LIU Yizhan YANG yuantai hu Department of Mechanics Hubei Key Laboratory of Engineering Structural Analysis and Safety AssessmentHuazhong University of Science and TechnologyWuhan 430074China Department of Engineering Mechanics Shijiazhuang Tiedao UniversityShijiazhuang 050043China

The propagation of an elastic wave(EW)in a piezoelectric semiconductor(PSC)subjected to static biasing fields is *** is found that there exist two coupling waves between electric field and charge *** is stimulated by the action of the polarized electric field in the EW-front on charge carriers(EFC),and the other is stimulated by the action of initial electric field in biasing fields on dynamic carriers(IEC).Obviously,the latter is a man-made and tunable wave-carrier interaction.A careful study shows that IEC can play a leading role in remaking dynamic performance of the wave-front and an inter-medium role in transferring energy from biasing fields to ***,a method is proposed to reform the EW performance by biasing-fields:reforming the dispersivity of EW-fronts by promoting competition between IEC and EFC and inverting the dissipation by the IEC to transfer energy from biasing fields to *** corresponding tuning laws on the phase-frequency characteristics of an EW show that the wave velocity can be regulated smaller than the pure EW velocity at a lowfrequency and larger than the pure piezoelectric wave velocity at a *** for regulating the amplitude-frequency characteristics of the EW by the IEC,analyses show that EWs can obtain amplification only for those with relatively high vibration frequencies(small wave lengths).The studies will provide guidance for theoretical analysis of waves propagating in PSCs and practical application and design of piezotronic devices.

关键词： piezoelectric semiconductor(PSC) elastic wave(EW) carrier movement biasing field piezotronic device

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Effects of mechanical loadings on the performance of a piezoelectric hetero-junction

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Applied Mathematics and Mechanics(English Edition) 2022年第5期43卷 615-626页

作者： Wanli YANG Renzhong HONG Yunbo WANG yuantai hu Department of Mechanics School of Aerospace EngineeringHubei Key Laboratory of Engineering Structural Analysis and Safety AssessmentHuazhong University of Science and TechnologyWuhan 430074China Department of Microelectronics School of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan 430074China

A fully-coupled model for a piezoelectric hetero-junction subjected to a pair of stresses is proposed by discarding the depletion layer *** effect of mechanical loadings on PN junction performance is discussed in *** examples are carried out for a p-Si/ZnO-n hetero-junction under a pair of stresses acting on the ntype ZnO portion near the PN interface,where ZnO has the piezoelectric property while Si is *** is found that the bottom of conduction band is lowered/raised near the two loading points due to the decrease/increase in the electron potential energy there induced by a tensile-stress mode via sucking in majority-carriers from two outside regions,which implies appearance of a potential barrier and a potential well near two loading ***,the barrier height and well depth gradually become large with increasing tensile stress such that more and more electrons/holes are inhaled in loading region from the n-/p-zone,***,rising/dropping of conduction band bottom is brought out near the two loading points by a compressive-stress mode due to the increase/decrease in the potential energy of electrons by pumping out the majority-carriers from the loading region to the two outside ***,a potential well and a potential barrier are induced near the two loading points,such that more and more electrons/holes are driven away from the loading region to the n-zone/p-zone,respectively,with the increasing compressive *** effects are important to tune the carrier recombination rate near the PN ***,the present study possesses great referential significance to piezotronic devices.

关键词： piezoelectricity hetero-junction polarized charge potential barrier tuning

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Electric admittance analysis of quartz crystal resonator in thickness-shear mode induced by array of surface viscoelastic micro-beams

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Applied Mathematics and Mechanics(English Edition) 2017年第1期38卷 29-38页

作者： Jiemin XIE yuantai hu School of Civil Engineering and Mechanics Huazhong University of Science and TechnologyWuhan 430074China

The electric admittance of a compound system composed of a thickness-shear mode （TSM） quartz crystal resonator （QCR） and an array of surface viscoelastic micro-beams （MBs） is studied. The governing equations of the MBs are derived from the Timoshenko-beam theory in consideration of shear deformation. The electrical admittance is described directly in terms of the physical properties of the surface epoxy resin （SU-8） MBs from an electrically forced vibration analysis. It is found that both the inertia effect and the constraint effect of the MBs produce competitive influence on the resonant frequency and admittance of the compound QCR system. By further comparing the numerical results calculated from the Timoshenko-beam model with those from the Euler-beam model, the shear deformation is found to lead to some deviation of an admittance spectrum. The deviations are revealed to be evident around the admittance peak（s） and reach the maximum when a natural frequency of the MBs is identical to the fundamental frequency of the QCR. Besides, a higher order vibration mode of the MBs corresponds to a larger deviation at the resonance.

关键词： quartz crystal resonator (QCR) thickness-shear mode (TSM) electrical admittance shear deformation

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Stress-induced potential barriers and charge distributions in a piezoelectric semiconductor nanofiber

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Applied Mathematics and Mechanics(English Edition) 2019年第5期40卷 591-600页

作者： Shuaiqi FAN yuantai hu Jiashi YANG Department of Mechanics Hubei Key Laboratory of Engineering Structural Analysis and Safety AssessmentHuazhong University of Science and Technology Department of Mechanical and Materials Engineering University of Nebraska-Lincoln

The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Speci?c distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.

关键词： ZnO nanofiber mechanical tuning multi-field coupling theory potential barrier potential well

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COUPLED ANALYSIS FOR THE HARVESTING STRUCTURE AND THE MODULATING CIRCUIT IN A PIEZOELECTRIC BIMORPH ENERGY HARVESTER

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Acta Mechanica Solida Sinica 2007年第4期20卷 296-308页

作者： yuantai hu Ting hu Qing Jiang Department of Mechanics Huazhong University of Science and Technology Wuhan 430074 China Department of Mechanical Engineering University of California Riverside CA 92521 USA

The authors analyze a piezoelectric energy harvester as an electro-mechanically coupled system. The energy harvester consists of a piezoelectric bimorph with a concentrated mass attached at one end, called the harvesting structure, an electric circuit for energy storage, and a rectifier that converts the AC output of the harvesting structure into a DC input for the storage circuit. The piezoelectric bimorph is assumed to be driven into flexural vibration by an ambient acoustic source to convert the mechanical energies into electric energies. The analysis indicates that the performance of this harvester, measured by the power density, is characterized by three important non-dimensional parameters, i.e., the non-dimensional inductance of the storage circuit, the non-dimensional aspect ratio （length/thickness） and the non-dimensional end mass of the harvesting structure. The numerical results show that：（1） the power density can be optimized by varying the non-dimensional inductance for each fixed non-dimensional aspect ratio with a fixed non-dimensional end mass; and （2） for a fixed non-dimensional inductance, the power density is maximized if the non-dimensional aspect ratio and the non-dimensional end mass are so chosen that the harvesting structure, consisting of both the piezoelectric bimorph and the end mass attached, resonates at the frequency of the ambient acoustic source.

关键词： energy harvester piezoelectric bimorph harvesting structure RLC modulatingcircuit coupled interaction power density

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Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire

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Applied Mathematics and Mechanics(English Edition) 2020年第6期41卷 833-844页

作者： Wanli YANG yuantai hu E.N.PAN Department of Mechanics Hubei Key Laboratory of Engineering Structural Analysis and Safety AssessmentHuazhong University of Science and TechnologyWuhan 430074China Computer Modeling and Simulation Group College of EngineeringUniversity of AkronAkronOhio 44325U.S.A.

The electric band energy variation in a bent piezoelectric semiconductor(PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band *** considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’ s law. Numerical examples are carried out for an n-type Zn O nanowire in different locations induced by an applied concentrated end force. They include the electric potential, heavy hole(HH), light hole(LH), spin-orbit split-off(SO),and conduction band(CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover,at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics.

关键词： piezoelectric semiconductor(PSC) mechanical bending energy band ZnO

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NONLINEAR ANALYSIS OF A 5-LAYER BEAM-LIKE PIEZOELECTRIC TRANSFORMER NEAR RESONANCE

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Acta Mechanica Solida Sinica 2014年第2期27卷 195-201页

作者： Hairen Wang Xuan Xie yuantai hu Ji Wang Purple Mountain Observatory Chinese Academy of Sciences Department of Mechanics Huazhong University of Science and Technology Piezoelectric Device Laboratory Department of Mechanics and Engineering Science School of Mechanical Engineering and Mechanics Ningbo University

The paper examines the weakly nonlinear behavior of a 5-layer beam-like piezo- electric transformer operating near resonance, where the main structure of the device consists of properly poled and electroded flexible piezoceramic four-layers separated by a central metallic layer. Nonlinear effects of the large deflection to induce the incidental implane extension near res- onance are considered, which is shown that on one side of the resonant frequency the output-input relation becomes nonlinear, and the other side output voltage experiences jumps.

关键词： piezoelectric transformer resonance nonlinear vibration jump multi-valuedness

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An improved piezoelectric harvester available in scavenging-energy from the operating environment with either weaker or stronger vibration levels

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Science China(Physics,Mechanics & Astronomy) 2009年第2期52卷 218-225页

作者： XUE huan hu HongPing hu yuantai CHEN XueDong Department of Mechanics Huazhong University of Science and TechnologyWuhan 430074China

An improved harvester available in scavenging energy from the operating environment with either weaker or stronger vibration levels is studied. To ensure the optimal harvester performance, a Cuk dc-dc converter is employed into the modulating circuit. This paper reports how this harvester scav- enges maximal energy from varying-level vibrations and store energy into an electrochemical battery. Dependence of the duty cycle upon the external vibration level is calculated, and it is found that: 1) for weaker vibrations, the charging current into the battery is smaller than the allowable current, and thus all the optimal output power of the harvesting structure can be absorbed by the battery. In this case, the duty cycle should be fixed at 1.86%; 2) for stronger external forcing, the allowable charging current of the battery is smaller than the optimal harvested current. This indicates that just a portion of the sca- venged energy can be accepted by the battery. Thus, the duty cycle should be decreased gradually with the increase of the vibration level. Finally the energy transmission process and the roles of each elec- tronic element are analyzed. It is shown that a Cuk converter can greatly raise the efficiency of such a harvester, particularly when subjected to a weaker ambient vibration.

关键词： piezoelectric harvester scavenging energy Cuk converter duty cycle

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A full-coupling model of PN junctions based on the global-domain carrier motions with inclusion of the two metal/semiconductor contacts at endpoints

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Applied Mathematics and Mechanics(English Edition) 2020年第6期41卷 845-858页

作者： Wanli YANG Jinxi LIU Yongliang XU yuantai hu Department of Mechanics Hubei Key Laboratory of Engineering Structural Analysis and Safety AssessmentHuazhong University of Science and TechnologyWuhan 430074China Department of Engineering Mechanics Shijiazhuang Tiedao UniversityShijiazhuang 050043China

A full-coupling model on the current-voltage(J-V)characteristics of PN junctions is put forward in the paper by taking into account both the whole junction and the two electrode regions consisting of metal/semiconductor(M/S)*** depletion layer assumption proposed by the Shockley model is ***’law on the electric potential and the electric field is applied in the whole junction region such that the majority-carrier currents inside and outside the P/N barrier region are able to be exactly defined and clearly ***,the stable continuity equations of the electron and hole currents are established to show the current conversion between minority-and majority-carriers inside the whole PN junction *** analyzing all the conversion procedure,the J-V characteristics of a PN junction are obtained with good agreement to the experimental results,which are closely dependent on the minority-carrier lifetime and doping ***,the study on this topic possesses referential significance to mechanically tuning the performance of piezoelectric PN junctions and piezotronic devices.

关键词： semiconductor current-voltage(J-V)characteristic minority-and majoritycarrier currents depletion layer approximation minority-carrier lifetime

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