检索结果-南通市图书馆

Open-circuit fault diagnosis and fault tolerance for shunt active power filter

在线全文

学校读者我要写书评

暂无评论

Journal of Central South University 2017年第11期24卷 2582-2595页

作者： PENG Tao ZHAO Shuai DAN Han-bing yu hua-xiong School of Information Science and Engineering Central South UniversityChangsha 410083China

The open-circuit fault of the power switches in shunt active power filter(SAPF) would exacerbate the harmonic pollution of power grid, and degrade the reliability of the devices and system. A fault diagnosis method is proposed based on reference model and an over-modulation strategy under hardware fault tolerance for SAPF. First, a mathematic model is established for SAPF. Second, the residuals are generated by comparing the outputs of reference model and those of actual model, and open-switch fault is detected and diagnosed by residual evaluation. After that, hardware fault tolerance is performed with the three-phase four-switch(TPFS) topology to isolate the faulty phase. Finally, the over-modulation strategy is proposed to increase the voltage transfer ratio of the TPFS topology. Simulation and experimental results verified the feasibility and effectiveness of the proposed method.

关键词： fault diagnosis fault tolerant reference model over-modulation three-phase four-switch topology shunt active power filter

Resistive switching characteristics of Dy_2O_3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition

在线全文

学校读者我要写书评

暂无评论

Rare Metals 2014年第1期33卷 75-79页

作者： Hong-Bin Zhao Hai-Ling Tu Feng Wei Xin-Qiang Zhang yu-hua xiong Jun Du Advanced Electronic Materials Institute General Research Institute for Nonferrous Metals

Resistive switching （RS） behaviors of Dy2O3- based memory devices with and without Pt nanocrystals （Pt-nc） layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage （〈1.2 V）, high resistance ratio （〉1 × 104）, a large number of switching cycles, as well as long retention time （〉1 × 105 s）, owing to the local electric field confined and strengthened near the nanocrystals＇ location.

关键词： Dy2O3 Unipolar resistive switching Pt nanocrystal layer Pulsed laser deposition

Energy band alignment of HfO2 on p-type(100)InP

在线全文

学校读者我要写书评

暂无评论

Rare Metals 2017年第3期36卷 198-201页

作者： Meng-Meng Yang Hai-Ling Tu Jun Du Feng Wei yu-hua xiong Hong-Bin Zhao Xin-Qiang Zhang Advanced Electronic Materials Institute General Research Institute for Nonferrous MetalsBeijing 100088China National Engineering Research Center for Semiconductor Materials General Research Institute for Nonferrous Metals Beijing 100088China

The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was *** chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy （XPS）.The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the *** spectrophotometer （UVS） was employed to obtain the band gap value of *** 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/*** results show that the （5.88 ± 0.05） eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset （△Ec） of （2.74 ± 0.05） eV and a valence band offset （△Ev） of （1.80 ± 0.05） *** with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset （1.35 eV larger）,which is beneficial to suppress the tunneling leakage current.

关键词： Band alignment HfO2 InP Large conductionband offset

Improving interfacial and electrical properties of HfO_(2)/SiO_(2)/p-Si stacks with N_(2)-plasma-treated SiO_(2) interfacial layer

在线全文

学校读者我要写书评

暂无评论

Rare Metals 2023年第6期42卷 2081-2086页

作者： Xiao-Qiang Chen yu-hua xiong Jun Du Feng Wei Hong-Bin Zhao Qing-Zhu Zhang Wen-Qiang Zhang Xiao-Ping Liang Advanced Electronic Materials Institute General Research Institute for Nonferrous MetalsBeijing100088China State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing100088China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing100029China

The effect of N_(2)-plasma-treated SiO_(2) interfacial layer on the interfacial and electrical characteristics of HfO_(2)/SiO_(2)/p-Si stacks grown by atomic layer deposition(ALD) was *** microstructure and interfacial chemical bonding configuration of the HfO_(2)/SiO_(2)/Si stacks were also examined by high-resolution transmission electron microscopy(HRTEM) and X-ray photoelectron spectroscopy(XPS).Compared with the samples without N2-plasma treatment,it is found that the samples with N2-plasma treatment have less oxygen vacancy density for SiO_(2) interfacial layer and better HfO_(2)/SiO_(2) *** agreement with XPS analyses,electrical measurements of the samples with N2-plasma treatment show better interfacial quality,including lower interface-state density(Dit,9.3 × 1011 cm^(-2)·eV^(-1) near midgap) and lower oxidecharge density(Q_(ox),2.5 × 1012 cm^(-2)),than those of the samples without N_(2)-plasma ***,the samples with N_(2)-plasma treatment have better electrical performances,including higher saturation capacitance density(1.49 μF·cm^(-2)) and lower leakage current density(3.2 × 10^(-6) A·cm^(-2) at V_(g)=V_(fb)-1 V).Furthermore,constant voltage stress was applied on the gate electrode to investigate the reliability of these *** shows that the samples with N_(2)-plasma treatment have better electrical stability than the samples without N_(2)-plasma treatment.

关键词： Metal-oxide-semiconductor High-k Atomic layer deposited N_(2)-plasma treatment Interfacial characteristic Reliability

在线全文

学校读者我要写书评

暂无评论

不同科室护理人员被针刺伤现状调查

实用护理杂志 2003年第3期19卷 61-62页

作者：任小英喻姣花熊宇华中科技大学同济医学院附属协和医院护理部湖北武汉430022

针刺伤及其有关的侵害成为护士和其他医务人员的一个很严重的职业性健康问题.护士被用过的锐物刺伤的危险性与单位特征和她们所工作的医院的医疗水平有关[1].各级护理管理者如何做好本辖区职业防护管理,有效减少针刺伤的发生率,是保持... 详细信息

针刺伤及其有关的侵害成为护士和其他医务人员的一个很严重的职业性健康问题.护士被用过的锐物刺伤的危险性与单位特征和她们所工作的医院的医疗水平有关[1].各级护理管理者如何做好本辖区职业防护管理,有效减少针刺伤的发生率,是保持健康的护理人力资源的重要环节.为此,本文对武汉市某大型综合性医院护理人员在工作中被针刺伤的情况进行了调查研究.现报告如下.

关键词：护理人员针刺伤职业防护

Influence of introducing Zr,Ti,Nb and Ce elements on externally solidified crystals and mechanical properties of high-pressure die-casting Al–Si alloy

在线全文

学校读者我要写书评

暂无评论

International Journal of Minerals,Metallurgy and Materials 2025年第1期32卷 147-153页

作者： Junjie Li Wenbo yu Zhenyu Sun Weichen Zheng Liangwei Zhang Yanling Xue Wenning Liu Shoumei xiong Center of Materials Science and Engineering School of Mechanical and Electronic Control EngineeringBeijing Jiaotong UniversityBeijing 100044China Traffic&Transportation Engineering Central South UniversityChangsha 410075China Shanghai Synchrotron Radiation Facility Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201204China School of Materials Science and Engineering Tsinghua UniversityBeijing 100084China

High pressure die casting(HPDC)AlSi10Mn Mg alloy castings are widely used in the automobile *** can optimize the mechanical properties of castings through heat treatment,while the release of thermal stress arouses the deformation of large integrated ***,the development of non-heat treatment Al alloys is becoming the hot *** addition,HPDC contains externally solidified crystals(ESCs),which are detrimental to the mechanical properties of *** achieve high strength and toughness of non-heat treatment die-casting Al-Si alloy,we used AlSi9Mn alloy as matrix with the introduction of Zr,Ti,Nb,and *** influences on ESCs and mechanical properties were systematically investigated through three-dimensional reconstruction and thermodynamic *** results reveal that the addition of Ti increased ESCs'size and porosity,while the introduction of Nb refined ESCs and decreased ***,large-sized Al_3(Zr,Ti)phases formed and degraded the mechanical *** introduction of Ce resulted in the poisoning effect and reduced mechanical properties.

关键词： aluminium alloy high-pressure die-casting externally solidified crystals non-heat treatment

利用热释光和光激励技术研究合成工艺对BaFBr∶Eu^(2+),Al^(3+)发光性质的影响

在线全文

学校读者我要写书评

暂无评论

中国稀土学报 2002年第6期20卷 630-633页

作者：余华熊光楠李岩天津理工学院材料物理研究所天津300191

利用热释发光谱和光激励发光谱表征了不同合成工艺条件对合成BaFBr:Eu2+,Al3+发光性质的影响。利用理论分析找出了热释发光衰减与光激励衰减的异同,理论上计算了不同的合成工艺对BaFBr:Eu2+,Al3+色心能级的影响,其热释发光谱和光激励发... 详细信息

利用热释发光谱和光激励发光谱表征了不同合成工艺条件对合成BaFBr:Eu2+,Al3+发光性质的影响。利用理论分析找出了热释发光衰减与光激励衰减的异同,理论上计算了不同的合成工艺对BaFBr:Eu2+,Al3+色心能级的影响,其热释发光谱和光激励发光谱的理论计算值能较好的吻合,并且能够很好的表征实验结果。

关键词：热释光光激励合成工艺发光性质稀土 BaFBr:Eu^2+ 色心发光材料溴氟化钙

在线全文

学校读者我要写书评

暂无评论

萸芪糖浆改善厌食大鼠营养吸收的实验研究

中国现代药物应用 2021年第16期15卷 235-238页

作者：喻雄华喻轶湖北省仙桃市中医医院 433000 湖北中医药大学 430000

目的本研究通过给厌食大鼠饲喂萸芪糖浆,观察大鼠厌食症状的改善情况。方法30只大鼠,随机分为正常组、模型组、治疗组,每组10只。三组大鼠喂养7 d后开始灌胃,正常组、模型组给予生理盐水灌胃,治疗组给予萸芪糖浆灌胃。比较三组大鼠摄食... 详细信息

目的本研究通过给厌食大鼠饲喂萸芪糖浆,观察大鼠厌食症状的改善情况。方法30只大鼠,随机分为正常组、模型组、治疗组,每组10只。三组大鼠喂养7 d后开始灌胃,正常组、模型组给予生理盐水灌胃,治疗组给予萸芪糖浆灌胃。比较三组大鼠摄食量、不同组织中β-内啡肽(β-Ep)含量及胃窦黏膜病理变化。结果第7天,三组大鼠摄食量比较差异无统计学意义(P>0.05);第14、21、28、35天,模型组大鼠摄食量均低于正常组,差异具有统计学意义(P0.05)。模型组与正常组下丘脑β-Ep含量比较,差异无统计学意义(P>0.05);模型组胃窦黏膜β-Ep(1.67±1.12)mg/kg、血浆β-Ep(6.01±1.46)ng/L低于正常组的(6.15±1.34)mg/kg、(7.78±1.65)ng/L,差异具有统计学意义(P0.05)。结论萸芪糖浆可增强厌食大鼠的营养摄入,具有调节厌食幼龄大鼠下丘脑、血浆和胃窦黏膜β-Ep含量的作用,且可修复受损胃黏膜,并改善大鼠体质。

关键词：萸芪糖浆厌食营养吸收

Thermally triggered topological polymerization in diacetylene-functionalized covalent organic framework toward enhanced memristive properties

在线全文

学校读者我要写书评

暂无评论

Science China Chemistry 2025年

作者： Panke Zhou yuxing huang Ziyue yu Cong Zhang Qian Chen Yiping Li Chao Lin xiong Chen State Key Laboratory of Photocatalysis on Energy and Environment Key Laboratory of Advanced Carbon-Based Functional MaterialsCollege of Chemistry Fuzhou University

The development of stimuli-responsive switching memory devices and the elucidation of their switching mechanisms in specific environments are crucial for advancing the field of molecular electronics. Herein, we propose two distinct two-dimensional covalent organic frameworks (COFs), namely Py-EDA and Py-BDA, incorporating acetylene (-C≡C-) or diacetylene(-C≡C-C≡C-) moieties, respectively, targeting fabricate memory devices exhibiting stimuli-responsive switching *** findings demonstrate that the incorporation of acetylene units effectively modulates the electronic band structure and enhances the degree ofπ-conjugation, resulting in devices that exhibit typical bipolar nonvolatile memory performance. Notably,upon thermal treatment, the memory behavior of the ITO/Py-BDA/Ag device transitions to a write-once-read-many-times(WORM) mode, displaying decreased SET voltage, increased ON/OFF current ratio, and remarkable retention reliability and cycle stability. This switching behavior is attributed to the occurrence of interlayer solid-state topological polymerization at 350℃, leading to the transformation of diacetylene columnar arrays into enyne chains within Py-BDA, thereby further promoting interlayer charge transfer and separation.

关键词：