检索结果-南通市图书馆

MoS2 synaptic transistor with one-step manufacture

Science China(Information Sciences) 2025年第1期68卷 357-365页

作者： Yihao GUO Yang WANG Wenjie DENG Yi WU Jingtao LI Kexin LI Yuehui ZHAO Songlin YU Xiaoting WANG yongzhe zhang Hui YAN Key Laboratory of Optoelectronics Technology of Education Ministry of China Faculty of Information TechnologyBeijing University of Technology Key Laboratory of Advanced Functional Materials Ministry of Education Faculty of Materials and ManufacturingBeijing University of Technology The 11th Research Institute of Electronics Technology Group Corporation

The synaptic transistor,which is a neuromorphic device with brain-like functions,has garnered significant attention due to characteristics such as low energy consumption,high integration,multiple functions,and high computational ***,the current synaptic transistor possesses a complicated structure and involves complex manufacturing steps,which is not conducive to low-cost,large-scale bionic ***,we introduce a simple MoS2synaptic transistor exhibiting robust synaptic *** transistor utilizes magnetron sputtering manufacture to combine the process of device metal electrode deposition and the introduction of defect states,which helps streamline the manufacturing process into a single *** long-term potentiation and long-term depression in photoelectric coordination are initially ***,biological functions,such as double pulse facilitation and the transformation behavior of short-term memory to long-term memory,are thoroughly evaluated,along with learning-forgetting-relearning ***,the device exhibits robust synaptic plasticity until incident light angles down to 30° to imitate the multi-to-one axon-cellular ***,a classical simulation of Pavlov's dog conditioned reflex is demonstrated along with the multiview extraction *** experimental results demonstrate a promising synaptic transistor with a simple structure,manufacturing technique,and excellent *** further indicates the potential for large-scale integration of bionic neuromorphic systems.

关键词： process optimization artificial synaptic device one-stepmanufacture synaptic plasticity bionic simulation

来源：

同方期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

SnO2-based electron transporting layer materials for perovskite solar cells: A review of recent progress

引用

Journal of Energy Chemistry 2019年第8期28卷 144-167,I0006页

作者： Yichuan Chen Qi Meng Linrui zhang Changbao Han Hongli Gao yongzhe zhang Hui Yan College of Material Sciences and Engineering Beijing University of TechnologyBeijing 100124 China School of Mechanical and Electrical Engineering Jingdezhen Ceramic InstituteJingdezhen 333403 Jiangxi China

In recent years, due to their high photo-to-electric power conversion efficiency(PCE)(up to 23%(certified)) and low cost, perovskite solar cells(PSCs) have attracted a great deal of attention in photovoltaics field. The high PCE can be attributed to the excellent physical properties of organic–inorganic hybrid perovskite materials, such as a long charge diffusion length and a high absorption coefficient in the visible range. There are different diffusion lengths of holes in electrons in a PSC device, and thus the electron transporting layer(ETL) plays a critical role in the performance of PSCs. An alternative for TiO2, to the most common ETL material is SnO2, which has similar physical properties to TiO2 but with much higher electron mobility, which is beneficial for electron extraction. In addition, there are many facile methods to fabricate SnO2 nanomaterials with low cost and low energy consumption. In this review paper, we focus on recent developments in SnO2 as the ETL of PSCs. The fabrication methods of SnO2 materials are briefly introduced. The influence of multiple Sn O2 types in the ETL on the performance of PSCs is then reviewed. Different methods for improving the PCE and long-term stability of PSCs based on SnO2 ETL are also summarized. The review provides a systematic and comprehensive understanding of the influence of different Sn O2 ETL types on PSC performance and potentially motivates further development of PSCs with an extension to SnO2-based PSCs.

关键词： Perovskite solar cells Electron transport materials Tin oxide Nanostructures

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

CMOS-compatible retinomorphic Si photodetector for motion detection

引用

Science China(Information Sciences) 2023年第6期66卷 242-249页

作者： Yi WU Wenjie DENG Xiaoqing CHEN Jingjie LI Songyu LI yongzhe zhang Faculty of Materials and Manufacturing Beijing University of Technology Key Laboratory of Optoelectronics Technology of Education Ministry of China Faculty of Information TechnologyBeijing University of Technology School of Physics Beihang University

Efficient motion detection is essential for the Internet of Things. However, it suffers from overloading redundant static background information. Inspired by the human visual system, which is efficient in motion detection, we propose a silicon-based retinomorphic photodetector with a simple metal/insulator/semiconductor(MIS)structure, which is compatible with the complementary metal-oxide-semiconductor(CMOS)industry. In contrast to conventional photodetectors that generate a sustained photocurrent, our retinomorphic photodetector is sensitive only to the change in light intensity and therefore filters the redundant static background. In addition, it shows logarithmic dependence on the light intensity, which simplifies the contrast ratio measurement. Based on our moving object recognition experiment, after filtering background information, the information to be analyzed is reduced to 27.3%, thereby improving the image recognition efficiency in the subsequent processing tasks. This innovative and industry-compatible retinomorphic photodetector will facilitate the construction of future efficient motion detection systems.

关键词： retina photodetector motion detection bio-inspired in-sensor computing

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Binary-ternary transition metal chalcogenides interlayer coupling in van der Waals type-II heterostructure for visible-infrared photodetector with efficient suppression dark currents

引用

Nano Research 2022年第3期15卷 2689-2696页

作者： Guoliang Xu Danmin Liu Songyu Li Yi Wu Zhenlu zhang Shaobo Wang Zikun Huang yongzhe zhang Key Laboratory of Advanced Functional Materials Ministry of EducationFaculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100124China School of Physics and Nuclear Energy Engineering Beihang UniversityBeijing 100083China School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Key Laboratory of Optoelectronics Technology Ministry of EducationFaculty of Information TechnologyBeijing University of TechnologyBeijing 100124China

Ternary two-dimentional(2D)materials exhibit diverse physical properties depending on their composition,structure,and *** forming heterostructures with other binary materials that show similar structure,there can be numerous potential applications of these ternary 2D *** this work,we reported the structure of few-layer CrPS_(4)by X-ray diffraction,transmission electron microscope,and electron-density distribution *** also demonstrated a new application of the CrPS_(4)/MoS_(2)heterobilayer:visible-infrared photodetectors with type-II staggered band alignment at room *** response of the heterostructure to infrared light results from a strong interlayer coupling that reduces the energy interval in the junction *** the intrinsic bandgap of individual components determines wavelengths,the decrease in energy interval allows better detection of light that has a longer *** used photoluminescence(PL)spectroscopy,Kelvin probe force microscopy(KPFM)under illumination,and electrical transport measurements to verify the photoinduced charge separation between the CrPS_(4)/MoS_(2)*** forward bias,the device functioned as a highly sensitive photodetector,as the wavelength-dependent photocurrent measurement achieved the observation of optical excitation from 532 to 1,450 nm ***,the photocurrent caused by interlayer exciton reached around 1.2 nA at 1,095 nm *** demonstration of the strong interlayer coupling in the CrPS_(4)/MoS_(2)heterostructure may further the understanding of the essential physics behind binary-ternary transition metal chalcogenides heterostructure and pave a way for their potential applications in visible-infrared devices.

关键词： heterostructure MoS_(2) CrPS_(4) interlayer transition visible-infrared photodetector type-II band alignment

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices

引用

Nano Research 2022年第1期15卷 123-144页

作者： Songyu Li Yang Ma Nabonswende Aida Nadege Ouedraogo Famin Liu Congya You Wenjie Deng yongzhe zhang School of Physics Beihang UniversityBeijing 100191China Key Laboratory of Advanced Functional Materials Ministry of EducationCollege of Materials Science and EngineeringBeijing University of TechnologyBeijing 100124China

Two-dimensional layered transition metal dichalcogenides(TMDCs)have demonstrated a huge potential in the broad fields of optoelectronic devices,logic electronics,electronic integration,as well as neural *** take full advantage of TMDC characteristics and efficiently design the device structures,one of the most key processes is to control their p-/n-type *** this review,we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring,substitutional doping,surface charge transfer,chemical intercalation,electrostatic modulation,and dielectric interface *** modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and ***,challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies.

关键词： transition metal dichalcogenides p-/n-type modulation doping method electronic devices optoelectronic devices

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Growth of centimeter scale Nb_(1−x)W_(x)Se_(2) monolayer film by promoter assisted liquid phase chemical vapor deposition

引用

Nano Research 2022年第3期15卷 2608-2615页

作者： Boxing An Yang Ma Feihong Chu Xuhong Li Yi Wu Congya You Wenjie Deng Songyu Li yongzhe zhang Key Laboratory of Advanced Functional Materials Ministry of EducationCollege of Materials Science and EngineeringBeijing University of TechnologyBeijing 100124China Key Laboratory of Optoelectronics Technology of Education Ministry of China Faculty of Information TechnologyBeijing University of TechnologyBeijing 100124China School of Physics Beihang UniversityBeijing 100191China

Two-dimensional(2D)transition-metal dichalcogenide materials(TMDs)alloys have a wide range of applications in the field of optoelectronics due to their capacity to achieve wide modulation of the band gap with fully tunable ***,it is still a challenge for growing alloys with uniform components and large lateral size due to the random distribution of the crystal nucleus ***,we applied a simple but effective promoter assisted liquid phase chemical vapor deposition(CVD)method,in which the quantity ratio of promoter to metal precursor can be controlled precisely,leading to tiny amounts of transition metal oxide precursors deposition onto the substrates in a highly uniform and reproducible manner,which can effectively control the uniform distribution of element components and nucleation *** this method,a series of monolayer Nb_(1−x)W_(x)Se_(2)alloy films with fully tunable compositions and centimeter scale have been successfully synthesized on sapphire *** controllable approach opens a new way to produce large area and uniform 2D alloy film,which has the potential for the construction of optoelectronic devices with tailored spectral responses.

关键词： centimeter scale Nb_(1−x)W_(x)Se_(2) promoter assisted liquid phase chemical vapor deposition

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction

引用

Science China(Information Sciences) 2024年第3期67卷 315-316页

作者： Guoliang XU Chao HE Donghong SHI Danmin LIU Wenjie DENG Jingzhen LI Xingtao AN yongzhe zhang Hebei Provincial Key Laboratory of Photoelectric Control on Surface and Interface College of ScienceHebei University of Science and Technology Key Laboratory of Advanced Functional Materials Ministry of EducationFaculty of Materials and ManufacturingBeijing University of Technology Key Laboratory of Optoelectronics Technology Ministry of EducationFaculty of Information TechnologyBeijing University of Technology

Excitons play an important role as interconnect in the optical and optoelectronic response and have attracted much attention for understanding the physical matters behind excitons [1, 2]. Excitons in atomically thin transition metal dichalcogenides semiconductors(TMDs) often trap an electron(X-) or a hole(X+) to form so-called trions,

关键词： Excitons

来源：

同方期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Reconfigurable logic and in-sensor encryption operations in an asymmetrically tunable van der Waals heterostructure

引用

Nano Research 2024年第4期17卷 3113-3119页

作者： Fan Gong Wenjie Deng Yi Wu Fengming Liu Yihao Guo Zelin Che Jingjie Li Jingzhen Li Yang Chai yongzhe zhang Key Laboratory of Optoelectronics Technology of Education Ministry of China Faculty of Information TechnologyBeijing University of TechnologyBeijing 100124China Key Laboratory of Advanced Functional Materials Ministry of EducationFaculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100124China Department of Applied Physics Hong Kong Polytechnic UniversityKowloonHong KongChina

Reconfigurable devices can be used to achieve multiple logic operation and intelligent optical sensing with low power consumption,which is promising candidates for new generation electronic and optoelectronic integrated ***,the versatility is still limited and need to be extended by the device architectures ***,we report an asymmetrically gate two-dimensional(2D)van der Waals heterostructure with hybrid dielectric layer SiO_(2)/hexagonal boron nitride(h-BN),which enable rich function including reconfigurable logic operation and in-sensor information encryption enabled by both volatile and non-volatile optoelectrical *** the partial gate is grounded,the non-volatile light assisted electrostatic doping endowed partially reconfigurable doping between n-type and p-type,which allow the switching of logic XOR and not implication(NIMP).When the global gate is grounded,additionally taking the optical signal as another input signal,logic AND and OR is realized by combined regulation of the light and localized gate *** on the high on/off current ratio approaching 105 and reliable&switchable logic gate,in-sensor information encryption and decryption is demonstrated by manipulating the logic ***,these results provide strong extension for current reconfigurable electronic and optoelectronic devices.

关键词： in-sensor encryption reconfigurable logic van der Waals heterostructure asymmetrical tunable architecture

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Carrier mobility tuning of MoS_(2) by strain engineering in CVD growth process

引用

Nano Research 2021年第7期14卷 2314-2320页

作者： Yongfeng Chen Wenjie Deng Xiaoqing Chen Yi Wu Jianwei Shi Jingying Zheng Feihong Chu Beiyun Liu Boxing An Congya You Liying Jiao Xinfeng Liu yongzhe zhang College of Materials Science and Engineering Key Laboratory of Advanced Functional Materials of Education Ministry of ChinaBeijing Key Laboratory of Microstructure and Property of Advanced MaterialsBeijing University of TechnologyBeijing 100124China Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education Department of ChemistryTsinghua UniversityBeijing 100084China CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in NanoscienceNational Center for Nanoscience and TechnologyBeijing 100190China

Strain engineering is proposed to be an effective technology to tune the properties of two-dimensional(2D)transition metal dichalcogenides(TMDCs).Conventional strain engineering techniques(e.g.,mechanical bending,heating)cannot conserve strain due to their dependence on external action,which thereby limits the application in *** addition,the theoretically predicted strain-induced tuning of electrical performance of TMDCs has not been experimentally proved ***,a facile but effective approach is proposed to retain and tune the biaxial tensile strain in monolayer MoS_(2) by adjusting the process of the chemical vapor deposition(CVD).To prove the feasibility of this method,the strain formation model of CVD grown MoS_(2) is proposed which is supported by the calculated strain dependence of band gap via the density functional theory(DFT).Next,the electrical properties tuning of strained monolayer MoS_(2) is demonstrated in experiment,where the carrier mobility of MoS_(2) was increased by two orders(~0.15 to~23 cm^(2)·V^(−1)·s^(−1)).The proposed pathway of strain preservation and regulation will open up the optics application of strain engineering and the fabrication of high performance electronic devices in 2D materials.

关键词： MoS_(2) CVD carrier mobility strain engineering 2D materials

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Unidirectional bound states in the continuum in Weyl semimetal nanostructures

引用

Photonics Research 2022年第8期10卷 1828-1838页

作者： CHEN ZHAO GUANGWEI HU YANG CHEN QING zhang yongzhe zhang CHENG-WEI QIU Faculty of Materials and Manufacturing Beijing University of TechnologyBeijing 100124China Department of Electrical and Computer Engineering National University of SingaporeSingapore 117583Singapore

Recently studied bound states in the continuum(BICs) enable perfect localization of light and enhance light–matter interactions although systems are optically open. They have found applications in numerous areas,including optical nonlinearity, light emitters, and nano-sensors. However, their unidirectional nature in nonreciprocal devices is still elusive because such trapping states are easily destroyed when the symmetry of an optical system is broken. Herein, we propose nonreciprocal and dynamically tunable BICs for unidirectional confinement of light and symmetry-protected BICs at Γ-point by introducing antiparallel magnetism into the optical system. We demonstrate that such BICs can be achieved by using topological magnetic Weyl semimetals near zero-index frequency without any structural asymmetry, and are largely tunable via modifying the Fermi *** results reveal a regime of extreme light manipulation and interaction with emerging quantum materials for various practical applications.

关键词： symmetry continuum unidirectional

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：