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Aqueous-solution-driven HfGdO_x gate dielectrics for low-voltage-operated α-InGaZnO transistors and inverter circuits

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Journal of Materials Science & Technology 2020年第15期47卷 1-12页

作者： yongchun zhang Gang He Wenhao Wang Bing Yang Chong zhang Yufeng Xia School of Physics and Materials Science Radiation Detection Materials&Devices LabAnhui UniversityHefei 230601China Institute of Physical Science and Information Technology Anhui UniversityHefei 230601China College of Mechanical and Electrical Engineering Chuzhou UniversityChuzhou 239000China

In this work,a non-toxic and environmentally friendly aqueous-solution-based method has been adopted to prepare gadolinium-doped hafnium oxide(HfO2) gate dielectric thin *** adjusting the gadolinium(Gd) doping concentration,the oxygen vacancy content,band offset,interface trap density,and dielectric constant of HfGdOx(HGO) thin films have been *** have confirmed that HGO thin films with Gd doping ratio of 15 at.% have demonstrated appropriate dielectric constant of 27.1 and lower leakage current density of 5.8×10-9 A *** indium-gallium-zinc oxide(α-IGZO) thin film transistors(TFTs) based on HGO thin film(Gd:15 at.%) as gate dielectric layer have exhibited excellent electrical performance,such as larger saturated carrier mobility(μsat) of 20.1 cm2 V-1 S-1,high on/off current ratio(Ion/Ioff) of ~108,smaller sub-threshold swing(SS) of 0.07 V decade-1,and a negligible threshold voltage shift(ΔVTH) of 0.08 V under positive bias stress(PBS) for 7200 *** confirm its potential application in logic circuit,a resistor-loaded inverter based on HGO/α-IGZO TFTs has been constructed.A high voltage gain of 19.8 and stable full swing characteristics have been *** a result,it can be concluded that aqueous-solution-driven HGO dielectrics have potential application in high resolution flat panel displays and ultra-large-scale integrated logic circuits.

关键词： Aqueous-solution-driven Low-voltage-operating HfGdOx gate dielectrics Rare earth element doping α-IGZO TFTs

Removal of carbonyl sulfide from CO_2 stream using AgNO_3-modified NaZSM-5

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Journal of Energy Chemistry 2013年第6期22卷 902-906页

作者： Yanjun Wang Shaoyun Chen Heng Chen Xingzhou Yuan yongchun zhang State Key Laboratory of Fine Chemicals School of Chemical Engineering Dalian University of Technology

Removal of carbonyl sulfide(COS) from CO2 stream is significant for the production and utilization of food grade CO2. This study investigates the adsorption performance of Ag/NaZSM-5 as adsorbent prepared by incipient wetness impregnation for the removal of COS from a CO2 stream in a fixed-bed adsorption apparatus. Effects of various conditions on the preparation of adsorbent, adsorption and desorption were intensively examined. The results revealed that COS can be removed to below 1×10-9from a CO2stream(1000 ppm COS/CO2) using Ag/NaZSM-5(10 wt% AgNO3) with an adsorption capacity of 12.86 mg·g-1. The adsorbent can be fully regenerated using hot air at 450 C. The adsorption ability remained stable even after eight cycles of regeneration.

关键词： carbonyl sulfide adsorption π-complexation completely regeneration Ag-modified adsorbents

Diffusion-activated high performance ZnSnO/Yb_(2)O_(3) thin film transistors and application in low-voltage-operated logic circuits

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Journal of Materials Science & Technology 2021年第11期70卷 49-58页

作者： Bing Yang Gang He Wenhao Wang yongchun zhang Chong zhang Yufeng Xia Xiaofen Xu School of Physics and Materials Science Radiation Detection Materials&Devices LabAnhui UniversityHefei 230601China Institute of Physical Science and Information Technology Anhui UniversityHefei 230601China School of Mechanical Engineering Anhui Vocational and Technical CollegeHefei 230011China

The flourishing metal-oxide high-k dielectric materials have been regarded as the vital components of low voltage operated flexible transparent electronic *** herein report that ytterbium oxide(Yb_(2)O_(3))and ZnSnO(ZTO)thin films were firstly integrated into ZTO-based thin film transistors(TFTs)with superior *** have indicated that the 500℃-annealed ZTO/Yb_(2)O_(3) TFTs possess the large saturation mobility of 9.1 cm^(2) V-1S^(-1) and the high on/off current ratio of 2.15×10^(7),which even surpass those of reported In-based *** deteriorative electrical properties in the aging process can be attributed to the carrier capture ***,the 460℃-processed TFTs demonstrate a tenfold increase in saturated mobility and an increase in on/off current ratio after 10 days *** inspiring electrical properties are attributed to the diffusion-activated carrier enhancement mechanism and electrons donor role of water molecular,which introduces a facile method to boost the device performance at lower processing *** neglected threshold voltage variations of 0.06 V and-0.2V have been detected after bias stability *** superior bias stability can be attributed to the charge delay effect induced by the continuous electric ***,the ultrahigh on/off current ratio of 1.1×10^(7) and the recoverable transferring performance have verified the aging-activated *** confirm its potential application in digital circuits,a resistor-loaded inverter with gain of 5.6 has been constructed and good dynamic response behavior have been detected at a low voltage of *** a result,it can be concluded that the high temperature annealing TFTs need immediate encapsulation,while the performance of the lower temperature processing samples can be optimized after aging treatment,indicating the potential prospect in low power consumption large-scale flexible transparent devices.

关键词： Ytterbium oxide(Yb_(2)O_(3)) Thin-film transistors(TFTs) Diffusion-activated Bias stability Inverter

Illumination interface stability of aging-diffusion-modulated high performance InZnO/DyO_(x) transistors and exploration in digital circuits

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Journal of Materials Science & Technology 2021年第28期87卷 143-154页

作者： Bing Yang Gang He Qian Gao Wenhao Wang yongchun zhang Yufeng Xia Xiaofen Xu Leini Wang Miao zhang School of Physics and Materials Science Radiation Detection Materials&Devices LabAnhui UniversityHefei230601China Institute of Physical Science and Information Technology Anhui UniversityHefei230601China School of Mechanical Engineering Anhui Vocational and Technical CollegeHefei230011China

In current study,the rare-reported solution-driven DyO_(x)films have been prepared to act as the dielectric layer of high performance InZnO/DyO_(x)thin film transistors(TFTs).Annealing temperature dependent thermal decomposition,morphology,crystallization behavior,and chemical compositions of DyO_(x) and InZnO films have been investigated *** have demonstrated that air-annealed InZnO/DyO_(x)TFTs possess the improved electrical performance,including ultrahigh on/off current ratio of 1×10^(9),larger saturation mobility of 12.6 cm^(2) V-1 s^(-1) and negligible hysteresis after 10 d aging diffusion in the relative humidity(RH)of 40%air ambient,which has been explored by the variable range-hopping(VRH)percolation model and energy band *** distinct illumination bias stability can be attributed to the generated various interface defects and concluded that the white light illuminated TFT behaves the higher stability with the smaller threshold voltage shift of 0.25 *** confirm its feasible application in digital circuit,a resistor-loaded inverter based on InZnO/DyO_(x)TFTs has been constructed.A high gain of 10.1 and good dynamic response behavior have been detected at a low operating voltage of 2 *** a result,it can be inferred that diffusion-induced enhanced carrier transporting mechanism is an economical and effective method to optimize the electrical performance of solution-derived InZnO/DyO_(x)TFTs,indicating its potential application prospects in flexible transparent electronics with low power consumption.

关键词： Dysprosium oxide(DyO_(x)) Thin film transistors(TFTs) Aging-diffusion Inverter Illumination bias stability

Experimental research on influencing factors of wet removal of NO from coal-fired flue gas by UV/H_2O_2 advanced oxidation process

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Science China(Technological Sciences) 2010年第7期53卷 1839-1846页

作者： LIU YangXian, zhang Jun, SHENG ChangDong, zhang yongchun & ZHAO Liang School of Energy & Environment, Southeast University, Nanjing 210096, China School of Energy & Environment Southeast University Nanjing China

Wet removal of NO from coal-fired flue gas by UV/H2O2 Advanced Oxidation Process (AOP) were investigated in a self-designed UV-bubble reactor. Several main influencing factors (UV intensity, H2O2 initial concentration, initial pH value, solution temperature, NO initial concentration, liquid-gas ratio and O2 percentage content) on the NO removal efficiency were studied. The results showed that UV intensity, H2O2 initial concentration, NO initial concentration and liquid-gas ratio are the main influencing factors. In the best conditions, the highest NO removal efficiency by UV/H2O2 advanced oxidation process could reach 82.9%. Based on the experimental study, the influencing mechanism of the relevant influencing factors were discussed in depth.

关键词： UV/H2O2 NO coal-fired flue gas AOP wet removal

Nano Au/TiO_2 hollow microsphere membranes for the improved sensitivity of detecting specific DNA sequences related to transgenes in transgenic plants

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Science China Chemistry 2008年第11期51卷 1066-1073页

作者： zhang yongchun, YANG Tao, ZHOU Na, zhang Wei & JIAO Kui College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, China College of Chemistry and Molecular Engineering Qingdao University of Science and Technology Qingdao China

Gold nanoparticles (nano Au)/titanium dioxide (TiO2) hollow microsphere membranes were prepared on the carbon paste electrode (CPE) for enhancing the sensitivity of DNA hybridization detection. The immobilization of nano Au and TiO2 microsphere was investigated with cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The hybridization events were monitored with EIS us-ing [Fe(CN)6]3-/4- as indicator. The sequence-specific DNA of the 35S promoter from cauliflower mosaic virus (CaMV35S) gene was detected with this DNA electrochemical sensor. The dynamic detection range was from 1.0×10-12 to 1.0×10-8 mol/L DNA and a detection limit of 2.3×10-13 mol/L could be ob-tained. The polymerase chain reaction (PCR) amplification of the terminator of nopaline synthase (NOS) gene from the real sample of a kind of transgenic soybean was also satisfactorily detected.

关键词： Au nanoparticle TiO_2 hollow microsphere DNA electrochemical biosensor CaMV35S gene NOS gene

Technical-economic evaluation of O_2/CO_2 recycle combustion power plant based on life-cycle

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Science China(Technological Sciences) 2010年第12期53卷 3284-3293页

作者： WANG Yun, ZHAO yongchun, zhang JunYing & ZHENG ChuGuang State Key Laboratory of Coal Combustion, Huazhong University of Science and Technology, Wuhan 430074, China State Key Laboratory of Coal Combustion Huazhong University of Science and Technology Wuhan China

In this study, a detailed technical-economic analysis on a O2/CO2 recycle combustion power plant (Oxy-combustion plant) retrofitted from the existing coal-fired plant (with a capacity of 2×300 MW) in China was carried out by using life cycle assessment (LCA) and life cycle cost (LCC) method. The CO2 emissions, investment cost, cost of electricity and CO2 avoidance cost within the life cycle were calculated respectively. The results showed that the CO2 emission avoidance rate of retrofitted Oxy-combustion plant in the life cycle was about 77.09% without taking account of the CO2 compression; the annual cost increased by 5.9% approximately, the net power decreased by 21.33%, the cost of electricity increased by 34.77%, and the CO2 avoidance cost was about 28.93 USD/t. Considering the compression process of CO2, the avoidance rate of CO2 emission was about 73.35% or so; the annual cost increased by 9.35% approximately, the net power decreased by about 26.70%, the cost of electricity increased by 49.13%, and the CO2 avoidance cost was about 45.46 USD/t. The carbon tax (the CO2 tax) should be more than about 24 USD/t and 34 USD/t under the condition of considering CO2 compression or not, respectively, which is beneficial to promote transformation of existing coal-fired plant for reducing the CO2 emissions.

关键词： life cycle assessment coal-fired power plant O2/CO2 recycle combustion technology cost of electricity CO2 avoidance cost

Patterns of crop-specific fertilizer-nitrogen losses and opportunities for sustainable mitigation:A quantitative overview of 15N-tracing studies

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Soil Ecology Letters 2024年第2期6卷 71-81页

作者： Cong Xu Hanshen Zhu Haokuang Liu Cheng Ji Jie Yuan Guanlin Li Jidong Wang yongchun zhang National Agricultural Experimental Station for Agricultural Environment LuheInstitute of Agricultural Resources and EnvironmentJiangsu Academy of Agricultural SciencesNanjing210014China School of the Environment and Safety Engineering Jiangsu UniversityZhenjiang212013China

Pattern and mitigation potential of crop-specific fertilizer-N losses were *** showed high fertilizer-N losses due to high N application rates and low ***,SOC,and soil pH are key parameters affecting fertilizer-N *** a given application rate,soils with higher SOC have lower fertilizer-N *** N rate combined with SOC improvement could cut 34.8%-59.6%of N losses.

关键词： fertilizer-nitrogen loss crop-specific 15N tracing soil organic carbon meta-analysis

高体积分数CO_2气氛下NO-煤焦反应特性

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动力工程学报 2015年第7期35卷 543-548页

作者：张永春张军江苏省特种设备安全监督检验研究院无锡分院江苏无锡214174 东南大学能源与环境学院南京210096

以李家塔烟煤和锦界烟煤煤焦为研究对象,利用固定床反应器系统,研究了高体积分数CO2气氛下煤焦异相还原NO的反应特性,分析了反应气氛、CO2体积分数、O2体积分数、NO初始体积分数和热解温度等对煤焦还原NO的影响.结果表明:反应气氛中高... 详细信息

以李家塔烟煤和锦界烟煤煤焦为研究对象,利用固定床反应器系统,研究了高体积分数CO2气氛下煤焦异相还原NO的反应特性,分析了反应气氛、CO2体积分数、O2体积分数、NO初始体积分数和热解温度等对煤焦还原NO的影响.结果表明:反应气氛中高体积分数CO2的存在不利于煤焦还原NO,且CO2体积分数越大,越不利于NO还原;当反应温度较低时,反应气氛中O2对煤焦还原NO具有一定的促进作用,但当反应温度较高时则不利于NO还原;随着NO初始体积分数增大,NO还原率降低;随着热解温度的升高,煤焦还原NO的能力下降.

关键词：煤焦 NO还原 CO2体积分数 O2体积分数反应气氛热解温度