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Alleviating Interfacial Recombination of Heterojunction Electron Transport Layer via Oxygen Vacancy Engineering for Efficient Perovskite Solar Cells Over 23%

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Energy & Environmental Materials 2023年第2期6卷 311-322页

作者： yohan ko Taemin Kim Chanyong Lee Changhyun Lee Yong Ju Yun Yongseok Jun Graduate School of Energy and Environment(KU-KIST Green School) Korea UniversitySeoul 02841Korea

Electron transport layer(ETL)is pivotal to charge carrier transport for PSCs to reach the Shockley-Queisser *** study provides a fundamental understanding of heterojunction electron transport layers(ETLs)at the atomic level for stable and efficient perovskite solar cells(PSCs).The bilayer structure of an ETL composed of SnO_(2) on TiO_(2) was examined,revealing a critical factor limiting its potential to obtain efficient *** of oxygen vacancies in the TiO_(2) underlayer via an annealing process is found to induce manipulated band offsets at the interface between the TiO_(2) and SnO_(2) ***-depth electronic investigations of the bilayer structure elucidate the importance of the electronic properties at the interface between the TiO_(2) and SnO_(2) *** apparent correlation in hysteresis phenomena,including current density-voltage(J-V)curves,appears as a function of the type of band *** functional theory calculations reveal the intimate relationship between oxygen vacancies,deep trap states,and charge transport efficiency at the interface between the TiO_(2) and SnO_(2) *** formation of cascade band alignment via control over the TiO_(2) underlayer enhances device performance and suppresses *** performance exhibits a power conversion efficiency(PCE)of 23.45%with an open-circuit voltage(V_(oc))of 1.184 V,showing better device stability under maximum power point tracking compared with a staggered bilayer under one-sun continuous illumination.

关键词： electron transport bilayer heterojunction bilayers interfacial defect oxygen vacancy engineering perovskite solar cells

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Amorphous BaTiO_(3) Electron Transport Layer for Thermal Equilibrium-Governed γ-CsPbl_(3) Perovskite Solar Cell with High Power Conversion Efficiency of 19.96%

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Energy & Environmental Materials 2024年第3期7卷 291-302页

作者： Changhyun Lee Chanyong Lee Kyungjin Chae Taemin Kim Seaeun Park yohan ko Yongseok Jun Department of Energy Environment Policy and Technology Graduate School of Energy and Environment(KU-KIST Green School)Korea UniversitySeoul 02841Republic of Korea Nano Electronic Materials and Components Research Center Gumi Electronics and Information Technology Research Institute(GERI)Gumi 39171Republic of Korea Energy Materials Research Center Clean Energy Research DivisionKorea Institute of Science and Technology(KIST)Seoul 02792Republic of Korea

Compared to organic-inorganic hybrid perovskites,the cesium-based allinorganic lead halide perovskite(CsPbI_(3))is a promising light absorber for perovskite solar cells owing to its higher resistance to thermal ***,additional research is required to reduce the nonradiative recombination to realize the full potential of CsPbI_(3).Here,the diffusion of Cs ions participating in ion exchange is proposed to be an important factor responsible for the bulk defects inγ-CsPbI_(3)*** based on first-principles density functional theory reveal that the[PbI_(6)]^(4-)octahedral tilt modifies the perovskite crystallographic properties inγ-CsPbI_(3),leading to alterations in its bandgap and crystal *** addition,by substituting amorphous barium titanium oxide(a-BaTiO_(3))for TiO_(2)as the electron transport layer,interfacial defects caused by imperfect energy levels between the electron transport layer and perovskite are ***-resolution transmission electron microscopy and electron energy loss spectroscopy demonstrate that a-BaTiO_(3)forms entirely as a single phase,as opposed to Ba-doped TiO_(2)hybrid nanoclusters or separate domains of TiO_(2)and BaTiO_(3)***,inorganic perovskite solar cells based on the a-BaTiO_(3)electron transport layer achieved a power conversion efficiency of 19.96%.

关键词： amorphous BaTiO_(3) electron transport layer moisture γ-CsPbI_(3)

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