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On the accurate characterization of quantum-dot light-emitting diodes for display applications

npj Flexible Electronics 2022年第1期6卷 351-362页

作者： Wangxiao Jin Yunzhou Deng Bingbing Guo yaxiao lian Baodan Zhao Dawei Di Xiaowei Sun Kai Wang Shuming Chen Yixing Yang Weiran Cao Song Chen Wenyu Ji Xuyong Yang Yuan Gao Shuangpeng Wang Huaibin Shen Jialong Zhao Lei Qian Fushan Li Yizheng Jin Key Laboratory of Excited-State Materials of Zhejiang Province State Key Laboratory of Silicon MaterialsDepartment of ChemistryZhejiang University310027 HangzhouChina State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang University310027 HangzhouChina Department of Electronic and Electrical Engineering Southern University of Science and Technology518055 ShenzhenChina TCL Research ShenzhenGuangdongChina Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. LtdShenzhenGuangdongChina College of Chemistry Chemical Engineering and Materials ScienceSoochow University199 Ren’ai Rd215123 SuzhouJiangsuChina Key Lab of Physics and Technology for Advanced Batteries(Ministry of Education) College of PhysicsJilin University130023 ChangchunChina Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University149 Yanchang RoadShanghai 200072China Najing Technology Corporation Ltd Hangzhou 310052China Institute of Applied Physics and Materials Engineering University of MacaoTaipaMacaoSAR 999078China Key Laboratory for Special Functional Materials of Ministry of Education National&Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technologyand Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004China School of Physical Science and Technology MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and MaterialsGuangxi Key Laboratory of Processing for Non-ferrous Metals and Featured MaterialsGuangxi UniversityNanning 530004China Division of Functional Materials and Nanodevices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China College of Physics and Information Engineering Fuzhou UniversityFuzhou 350108China

Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display *** the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different ***,we report a comprehensive study on the characterizations of QLEDs using various *** show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device *** errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay ***,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.

关键词： diodes characterization luminous

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短脉冲间隔脉冲组输出电光调Q Nd:YAG激光器

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中国激光 2018年第6期45卷 1-6页

作者：连亚霄王超王頔段育盛郭俊文金光勇长春理工大学理学院吉林省固体激光技术与应用重点实验室吉林长春130022

提出了一种短脉冲间隔、子脉冲峰值功率高的脉冲组输出电光调Q激光器。以激光二极管(LD)侧面抽运Nd:YAG晶体,谐振腔单次储能,控制Q开关台阶式多次开启,将单次抽运能量分多次调Q输出,实现短脉冲间隔脉冲组激光输出,为高重复频率、高峰值... 详细信息

提出了一种短脉冲间隔、子脉冲峰值功率高的脉冲组输出电光调Q激光器。以激光二极管(LD)侧面抽运Nd:YAG晶体,谐振腔单次储能,控制Q开关台阶式多次开启,将单次抽运能量分多次调Q输出,实现短脉冲间隔脉冲组激光输出,为高重复频率、高峰值功率激光器提供研究思路。实验结果表明,用一组半环形激光二极管模块作为工作物质Nd:YAG的抽运源,铌酸锂(LN)晶体作为Q开关,激光二极管模块单次抽运工作物质储能,台阶式开启Q开关,激光器在1~20Hz频率范围内能够稳定运行,得到子脉冲间隔最小为100ns的脉冲组输出,子脉冲频率在1.1~10.0MHz范围内可调,子脉冲能量大于23mJ,能量波动小于10%,单个脉冲宽度小于37ns,子脉冲峰值功率接近1 MW,光-光转换效率为22.5%。

关键词：激光器电光开关脉冲间隔可调脉冲个数可调台阶式开启

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Advances in the Application of Perovskite Materials

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Nano-Micro Letters 2023年第10期15卷 334-381页

作者： Lixiu Zhang Luyao Mei Kaiyang Wang Yinhua Lv Shuai Zhang yaxiao lian Xiaoke Liu Zhiwei Ma Guanjun Xiao Qiang Liu Shuaibo Zhai Shengli Zhang Gengling Liu Ligang Yuan Bingbing Guo Ziming Chen Keyu Wei Aqiang Liu Shizhong Yue Guangda Niu Xiyan Pan Jie Sun Yong Hua Wu‑Qiang Wu Dawei Di Baodan Zhao Jianjun Tian Zhijie Wang Yang Yang liang Chu Mingjian Yuan Haibo Zeng Hin‑Lap Yip Keyou Yan Wentao Xu Lu Zhu Wenhua Zhang Guichuan Xing Feng Gao Liming Ding Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190People’s Republic of China University of Chinese Academy of Sciences Beijing 100049People’s Republic of China Department of Physics Link.ping University58183 Link.pingSweden Institute of Applied Physics and Materials Engineering University of MacaoMacao 999078People’s Republic of China School of Materials Science and Engineering Yunnan UniversityKunming 650091People’s Republic of China School of Microelectronics Science and Technology Sun Yat-sen UniversityZhuhai 519082People’s Republic of China College of Electronic Information and Optical Engineering Nankai UniversityTianjin 300350People’s Republic of China Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of TechnologyShenzhen 518055People’s Republic of China School of Materials Science and Engineering Nanjing University of Science and TechnologyNanjing 210094People’s Republic of China College of Optical Science and Engineering Zhejiang UniversityHangzhou 310027People’s Republic of China State Key Laboratory of Superhard Materials Jilin UniversityChangchun 130012People’s Republic of China College of Electronic and Optical Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023People’s Republic of China School of Chemistry Sun Yat-sen UniversityGuangzhou 510006People’s Republic of China School of Environment and Energy South China University of TechnologyGuangzhou 510000People’s Republic of China Department of Chemistry Imperial College LondonLondon W120BZUK College of Chemistry Nankai UniversityTianjin 300071People’s Republic of China Institute for Advanced Materials and Technology University of Science and Technology BeijingBeijing 100083People’s Republic of China Institute of Semiconductors Chinese Academy of SciencesBeijing 100083People’s Republic of China School

Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices(solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices(artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.

关键词： Perovskites Optoelectronic devices Neuromorphic devices Pressure-induced emission

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