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Development of Low Dar. Cur.ent SiGe Near.Infr.r.d PIN Photodetector. on 300 mm Silicon Wafer.

Optics and Photonics Jour.al 2016年第5期6卷 61-68页

作者： Caitlin r.use John W. Zeller.Har.y Efstathiadis Pr.deep Haldar.Jay S. Lewis Nibir.K. Dhar.Pr.yalal Wijewar.asur.ya yash r. puri Ashok K. Sood State Univer.ity of New Yor. Polytechnic Institute Albany NY USA Magnolia Optical Technologies Inc. Woburn MA USA DAr.A/MTO Arlington VA USA US Ar.y Night Vision Sensor. and Electr.nic Division Fort Belvoir VA USA US Ar.y r.sear.h Labor.tor. Adelphi MD USA

SiGe offer. a low-cost alter.ative to conventional infr.r.d sensor.mater.al systems such as InGaAs, InSb, and HgCdTe for.developing near.infr.r.d (NIr. photodetector.devices that do not r.quir. cooling and can oper.te with r.latively low dar. cur.ent. As a r.sult of the significant differ.nce in ther.al expansion coefficients between ger.anium (Ge) and silicon (Si), tensile str.in incor.or.ted into SiGe detector.devices thr.ugh specialized gr.wth pr.cesses can extend their.NIr.wavelength r.nge of oper.tion. We have utilized high thr.ughput, lar.e-ar.a complementar. metal-oxide semiconductor.(CMOS) technology to fabr.cate Ge based p-i-n (PIN) detector.devices on 300 mm Si wafer.. The two-step device fabr.cation pr.cess, designed to effectively r.duce the density of defects and dislocations ar.sing dur.ng deposition that for. r.combination center. which can r.sult in higher.dar. cur.ent, involves low temper.tur. epitaxial deposition of Ge to for. a thin p+ seed layer. followed by higher.temper.tur. deposition of a thicker.Ge intr.nsic layer. Phosphor.s was then ion-implanted to cr.ate devices with n+ r.gions of var.ous doping concentr.tions. Secondar. ion mass spectr.scopy (SIMS) has been utilized to deter.ine the doping pr.files and mater.al compositions of the layer.. In addition, electr.cal char.cter.zation of the I-V photor.sponse of differ.nt devices fr.m the same wafer.with var.ous n+ r.gion doping concentr.tions has demonstr.ted low dar. cur.ent levels (down to below 1 nA at -1 V bias) and compar.tively high photocur.ent at r.ver.e biases, with optimal r.sponse for.doping concentr.tion of 5 × 1019 cm-3.

关键词： Photodetector. Infr.r.d Detector. Ger.anium Photodiodes Lar.e-Ar.a Wafer.

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Development of Nanostr.ctur.d Antir.flection Coatings for.EO/Ir.Sensor.and Solar.Cell Applications

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Mater.als Sciences and Applications 2012年第9期3卷 633-639页

作者： Ashok K. Sood Adam W. Sood r.ger.E. Welser.Gopal G. Pethur.ja yash r. puri Xing Yan David J. Poxson Jaehee Cho E. Fr.d Schuber. Nibir.K. Dhar.Dennis L. Polla Pr.deep Haldar.Jennifer.L. Har.ey College of Nanoscale Science and Engineer.ng Albany USA Depar.ment of Electr.cal and Computer.Systems Engineer.ng and Physics Rensselaer Polytechnic Institute Troy USA Magnolia Solar.Inc. Albany USA Micr.systems Technology Office of the Defense Advanced r.sear.h Pr.jects Agency Arlington USA New Yor. State Ener.y r.sear.h and Development Author.ty Albany USA.

Electr.-optical/infr.r.d (EO/Ir. sensor. and photovoltaic power.sour.es ar. being developed for.a var.ety of defense and commer.ial applications. One of the cr.tical technologies that will enhance both EO/Ir.sensor.and photovoltaic module per.or.ance is the development of high quality nanostr.ctur.-based antir.flection coatings. In this paper. we r.view our.wor. on advanced antir.flection str.ctur.s that have been designed by using a genetic algor.thm and fabr.cated by using oblique angle deposition. The antir.flection coatings ar. designed for.the wavelength r.nge of 250 nm to 2500 nm and an incidence angle between 00 and 400. These nanostr.ctur.d antir.flection coatings ar. shown to enhance the optical tr.nsmission thr.ugh tr.nspar.nt windows over.a wide band of inter.st and minimize br.adband r.flection losses to less than one per.ent, a substantial impr.vement over.conventional thin-film antir.flection coating technologies.

关键词： Antir.flection Coating Nanostr.ctur.d Layer Oblique Angle Deposition Silicon Dioxide Br.adband Omni-Dir.ctional

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Development of Nanostr.ctur.d Antir.flection Coatings for.EO/Ir.Sensor.and Solar.Cell Applications

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Mater.als Sciences and Applications（材料科学与应用期刊） 2012年第9期

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