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Biological Analysis and Response to Low Phosphate Stress of Phosphate Transporter Family 1 (PHT1) Genes in Solanum tuberosum L.

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Phyton-International Journal of Experimental Botany 2023年第8期92卷 2325-2348页

作者： yangyang du Yuanyuan Bao Lu Zheng Qinglong Tian Xinyong Zhang Key Laboratory of Crop Germplasm Innovation and Sustainable Utilization Collage of Agronomy and BiotechnologyYunnan Agricultural UniversityKunming650201China Laboratory of Fruit and Vegetable Preservation and Processing College of Food Science and TechnologyYunnan Agricultural UniversityKunming650201China

Inorganic phosphate(Pi)is one of the main nutrients necessary for plant *** transporters mediate the acquisition,transport and recycling of phosphate,which is essential for plant growth and *** PHT1 has been reported in many plants at home and abroad,it is rarely studied in ***,it is of great signiﬁcance to study the PHT1 family members in order to understand the molecular response mechanism of potato in low phosphate *** this study,a total of 6 potato PHT1 genes were identiﬁed and *** was found that after the expression of different members of potato PHT1 gene,there were certain differences in amino acids and proteins,and the transmembrane domains ranged from 6 to *** difference in the secondary and tertiary protein structure of potato PHT1 also led to a difference in protein *** addition,the expression of the PHT1 gene in potato increased obviously during 3~9 h of Pi deﬁciency ***,the expression levels of different genes in roots,stems and leaves are distinctly different,but the expression levels of the StPHT1;6 and StPHT1;10 genes are very high in roots,stems and leaves,indicating that these two genes may participate in the absorption of Pi in potato and play a role in Pi *** two genes play a major role in the regulation of expression under short-term Pi deﬁciency *** results provide an important reference for further understanding the evolution and function of potato phosphate transporters,and have important signiﬁcance for improving the ability of potato to tolerate low Pi.

关键词： Potato phosphate transporter gene short-term phosphate-deficiency stress biological analysis

3-13 HRXRD Study of 6H-SiC Implanted With 300 keV He Ions

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IMP & HIRFL Annual Report 2014年第1期 103-104页

作者： du yangyang 不详

In this paper, samples used are oriented 6H-SiC surface supplied by the MIT company. They were cutinto 10 mm10 mm10 mm in size. The 6H-SiC wafers were implanted with 300 keV He ions to a fluence of 11017cm?2 at 600?C. The implantation experiment was performed at the 320 kV Multi-discipline Research Platform for Highly Charged Ions of the Institute of Modern Physics,Chinese Academy of Sciences (CAS). The 300 keV Heions were implanted into 6H-SiC in vacuum (210?4Pa) and the current density was approximately 0.8A/cm2. After He implantation, the samples wereisochronally annealed at 750 and 1 200 ?C for 30 min,respectively, with the GSL1700X high-temperature vacuumsintering furnace in Ar atmosphere.

关键词： keV He Ions

Clear interaction mechanism between organic dyes and inorganic lanthanide-doped nanoparticles

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Science Bulletin 2021年第19期66卷 1942-1944,M0003页

作者： yangyang du Dengfeng Peng Xian Chen College of Materials Science and Engineering Shenzhen UniversityShenzhen 518060China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China

Lanthanide-doped nanoparticles,which contain lanthanide ions doped in an inorganic host,can generate wide wavelength range emissions corresponding to inner shell 4 f-4 f transitions of lanthanide ions[1–3].Unfortunately,lanthanide 4 f transitions have a narrow absorption band and small absorption cross-section(10-20 cm2)when compared with organic dye molecules(around10-17–10-16 cm2),posing a critical brightness performance limit of lanthanide ions[4,5].

关键词： lanthanide transitions absorption

3 - 14 UV Spectroscopy Study of 6H-SiC Irradiated with 300 keV He Ions

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IMP & HIRFL Annual Report 2013年第1期 79-80页

作者： du yangyang Li Bingsheng Wang Zhiguang

3-12 Recrystallization of He-ion Implanted 6H-SiC upon Annealing

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IMP & HIRFL Annual Report 2014年第1期 102-103页

作者： Li Bingsheng du yangyang Wang Zhiguang 不详

SiC is a wide band-gap semiconductor material with high breakdown voltage, large electron saturation migrationrate, small dielectric coefficient and good chemical stability which is of great interest for high-speed communicationand high-power control devices. For SiC microelectronics devices, ion-implantation is a kind of great ways to dopeimpurities. However, high dose energetic ions could create radiation damages which may cause amorphization atRT. Thermally annealing could cause recrystallization of SiC amorphous layers which significantly affects electricand optical properties of SiC material. Recrystallization of amorphous SiC occurs in a wide window of annealingtemperature. A partial recrystallization of amorphous SiC occurs upon annealing at a low temperature, whereascomplete recrystallization of amorphous SiC occurs upon annealing at a high temperature. He implantation-induceddamage in SiC has been extensively investigated. However, the complete recrystallization threshold temperature ofkeV He-ion implantation has not been systematically studied.

关键词： 6H-SiC upon Annealing

3-1 Transmission Electron Microscopy Investigations of Bubble Formation in Grain Boundaries of He-implanted Polycrystalline SiC

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IMP & HIRFL Annual Report 2015年第1期 89-90页

作者： Li Bingsheng du yangyang Wang Zhiguang Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730070 China Graduate University of Chinese Academy of Sciences Beijing 100049 China

Because of the low cross-section for neutron capture and its excellent structural, chemical and mechanical stability, silicon carbide (SiC) is an important material with application in the development of nuclear energy and waste technologies. For example, in the fourth generation of fission reactors, such as high-temperature gas-cooled reactors and gas-cooled fast reactors, TRISO-coated particle fuel is designed, because this fuel is very robust with no failures anticipated during irradiation and under accident conditions.

关键词： Transmission Electron Microscopy

3 - 13 Raman Spectroscopy Study of 6H-SiC Irradiated with 300 keV He Ions

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IMP & HIRFL Annual Report 2013年第1期 78-79页

作者： du yangyang Li Bingsheng Wang Zhiguang

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领域数据质量知识建模方法研究

现代情报 2023年第4期43卷 77-87页

作者：袁满杜杨杨东北石油大学计算机与信息技术学院黑龙江大庆163318

[目的/意义]质量模型为质量评估提供统一的术语和指导。然而,目前的质量模型存在术语不一致、适用性差等问题。尽管W3C和一些标准化机构也推出了一些数据质量知识表示模型,由于这些模型属于质量顶层本体,更具有通用性,不具有可操作性。... 详细信息

[目的/意义]质量模型为质量评估提供统一的术语和指导。然而,目前的质量模型存在术语不一致、适用性差等问题。尽管W3C和一些标准化机构也推出了一些数据质量知识表示模型,由于这些模型属于质量顶层本体,更具有通用性,不具有可操作性。如何让这些标准化的数据质量知识表示模型能够在特定领域有所应用、减少应用的门槛已成为一项挑战。基于上述问题,本文研究如何构建一套标准的、一致的以及适用的质量知识表示模型方法论具有重要意义。[方法/过程]首先,采用溯源法对DQV以及其他4个质量模型进行梳理总结,提炼出质量模型共有的核心要素并组织为数据质量概念模型,从而解决术语不一致的问题;其次,针对数据质量提出一套建模方法,即从实际业务需求出发,自底向上地构建一个标准的、适用的质量模型;最后,以语义准确性需求作为案例,利用本文提出的建模方法构建了相应的质量模型,验证了所提出方法的可行性。[结果/结论]提出了一个三阶段六步骤的质量模型建模方法。首先,对质量模型进行术语标准化;其次,提出的建模方法为用户提供一种思想,即如何应用和扩建现有的顶层质量模型并构建适合特定领域的质量模型;最后验证了该方法的可行性。

关键词：数据质量 DQV 元模型质量模型建模方法

3-11 Transmission Electron Microscopy Investigations of Bubble Formation along GBs in He-implanted Polycrystalline SiC

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IMP & HIRFL Annual Report 2014年第1期 100-101页

作者： Li Bingsheng Wang Zhiguang du yangyang Wei Kongfang Yao Cunfeng Sun Jianrong Zhang Hongpeng 不详

Because of the low cross-section for neutron capture and its excellent structural, chemical and mechanicalstability, silicon carbide (SiC) is an important material with application in the development of nuclear energyand waste technologies. The (n,) nuclear reaction inevitably introduces numerous He in SiC. Because of the lowsolubility of He atoms in SiC, a certain concentration of He atoms that are trapped in the matrix in the formof helium-vacancy clusters would form bubbles upon annealing. He bubbles would perhaps lead to degradation ofmaterial properties. Especially, He bubbles along Grain boundaries (GBs) can cause embrittlement by intergranularfracture, as usually observed in metals. Therefore, it is important to investigate the nucleation and growth of Hebubbles along GBs in He-implanted SiC.

关键词： Electron Microscopy Investigations