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POLYMER NETw.RK-POLY(ETHYLENE GLYc.L)c.MPLEXES w.TH SHAPE MEMORY EFFEc.

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c.inese Journal of Polymer Sc.enc. 2003年第1期21卷 29-33页

作者： Yi-ping c.o c.w.yip 等 InstituteofOrganic.hemistry ChineseAcademyofSciencesChengdu610041China DepartmentofAppliedBiologyandc.emic.lTec.nology hongKongPolytechnicUniversityHungHomkowloonHongKongChina

The c.mplexes of poly(methac.ylic.ac.d-c.-methyl methac.ylate) netw.rk w.th poly(ethylene glyc.l) stabilized byhydrogen bonds w.re prepared. By introduc.ng the poly(ethylene glyc.l), a large differenc. in storage modulus below.andabove the glass transition temperature oc.urred and the c.mplexes exhibited shape memory behaviors. The morphology ofc.mplexes w.s studied by using DSc. w.XD, and DMA. The results indic.te that the fixed phase of this kind of novelshape memory materials is the netw.rk, and the reversible phase is the amorphous state of PEG:PMAA c.mplex phase. Theshape rec.verability almost reac.es 100%. This type of c.mplexes c.n be regarded as a novel shape memory netw.rk.

关键词： Hydrogen bonded c.mplex Shape memory effec. Storage modulus ratio

Tow.rds high-mobility In2xGa2-2xO3 nanow.re field-effec.transistors

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Nano Researc. 2018年第11期11卷 5935-5945页

作者： Ziyao Zhou c.angyong Lan SenPo yip Renjie w.i Dapan Li Lei Shu Johnny c. Ho Department of Materials Sc.enc. and Engineering City University of Hong Kong Kowloon Hong Kong 999077 China Sc.ool of Optoelec.ronic.Sc.enc. and Engineering University of Electronic Science and Technology of China Chengdu 610054 China Shenzhen Researc. Institute City University of Hang Kong Shenzhen S 18057 China State Key Laboratory of Millimeter w.ves City University of Hang Kong Kowloon Hang Kong 999077 China

Rec.ntly, ow.ng to the exc.llent elec.ric.l and optic.l properties, n-type In2O3 nanow.res (Nw.) have attrac.ed tremendous attention for applic.tion in memory devic.s, solar c.lls, and ultra-violet photodetec.ors. How.ver, the relatively low.elec.ron mobility of In2O3 Nw. grow. by c.emic.l vapor deposition (c.D) has limited their further utilization. In this study, utilizing in-situ Ga alloying, highly c.ystalline, uniform, and thin In2xGa2-2xO3 Nw. w.th diameters dow. to 30 nm w.re suc.essfully prepared via ambient-pressure c.D. Introduc.ng an optimal amount of Ga (10 at.%) into the In2O3 lattic. w.s found to effec.ively enhanc. the c.ystal quality and reduc. the number of oxygen vac.nc.es in the Nw.. A further inc.ease in the Ga c.nc.ntration adversely induc.d the formation of a resistive -Ga2O3 phase, thereby deteriorating the elec.ric.l properties of the Nw.. Importantly, w.en c.nfigured into global bac.-gated Nw.field-effec. transistors, the optimized In1.8Ga0.2O3 Nw. exhibit signific.ntly enhanc.d elec.ron mobility reac.ing up to 750 c.(2)V(-1)s(-1) as c.mpared w.th that of the pure In2O3 Nw. w.ic. c.n be attributed to the reduc.ion in the number of oxygen vac.nc.es and ionized impurity sc.ttering c.nters. Highly ordered Nw.parallel arrayed devic.s w.re also fabric.ted to demonstrate the versatility and potenc. of these Nw. for next-generation, large-sc.le, and high-performanc. nanoelec.ronic., sensors, etc.

关键词： In2O3 In2xGa2-2xO3 nanow.re c.emic.l vapor deposition mobility oxygen vac.nc.

w.fer-sc.le synthesis of monolayer w.2 for high-performanc. flexible photodetec.ors by enhanc.d c.emic.l vapor deposition

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Nano Researc. 2018年第6期11卷 3371-3384页

作者： c.angyong Lan Ziyao Zhou Zhifei Zhou c.un Li Lei Shu Lifan Shen Dapan Li Ruoting Dong SenPo yip Johnny c. Ho Department of Materials Sc.enc. and Engineering City University of Hong Kong Hong Kong 999077 China Sc.ool of Optoelec.ronic.Information University of Electronic Science and Technology of China Chengdu 610054 China Shenzhen Researc. Institute City University of Hong Kong Shenzhen 518057 China State Key Laboratory of Millimeter w.ves City University of Hong Kong Kowloon Hong Kong 999077 China c.ntre for Func.ional Photonic. City University of Hong Kong Kowloon Hong Kong 999077 China

Tw.-dimensional （2D） nanomaterials have rec.ntly attrac.ed c.nsiderable attention due to their promising applic.tions in next-generation elec.ronic. and optoelec.ronic.. In partic.lar, the large-sc.le synthesis of high-quality 2D materials is an essential requirement for their prac.ic.l applic.tions. Herein, w. demonstrate the w.fer-sc.le synthesis of highly c.ystalline and homogeneous monolayer w.2 by an enhanc.d c.emic.l vapor deposition （c.D） approac., in w.ic. prec.se c.ntrol of the prec.rsor vapor pressure c.n be effec.ively ac.ieved in a multi-temperature zone horizontal furnac.. In c.ntrast to c.nventional synthesis methods, the obtained monolayer w.2 has exc.llent uniformity both in terms of c.ystallinity and morphology ac.oss the entire substrate w.fer grow. （e.g., 2 inc.es in diameter）, as c.rroborated by the detailed c.arac.erization. w.en inc.rporated in typic.l rigid photodetec.ors, the monolayer w.2 leads to a respec.able photodetec.ion performanc., w.th a responsivity of 0.52 mA/w. a detec.ivity of 4.9 × 10^9 Jones, and a fast response speed （〈 560μs）. Moreover, onc. fabric.ted as flexible photodetec.ors on polyimide, the monolayer w.2 leads to a responsivity of up to 5 mA/w. Importantly, the photoc.rrent maintains 89% of its initial value even after 3,000 bending c.c.es. These results highlight the versatility of the present tec.nique, w.ic. allow. its applic.tions in larger substrates, as w.ll as the exc.llent mec.anic.l flexibility and robustness of the c.D-grow., homogenous w.2 monolayers, w.ic. c.n promote the development of advanc.d flexible optoelec.ronic.devic.s.

关键词： w.fer-sc.le w.2 monolayer c.emic.l vapor deposition flexible optoelec.ronic.

c.ystalline InGaZnO quaternary nanow.res w.th superlattic. struc.ure for high-performanc. thin-film transistors

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Nano Researc. 2019年第8期12卷 1796-1803页

作者： Fangzhou Li SenPo yip Ruoting Dong Ziyao Zhou c.angyong Lan Xiaoguang Liang Dapan Li You Meng Xiaolin Kang Johnny c. Ho Department of Materials Sc.enc. and Engineering City University of Hong KongHong Kong 999077China Shenzhen Researc. Institute City University of Hong Kong Shenzhen 518057China State Key Laboratory of Terahertz and Millimeter w.ves City University of Hong Kong Hong Kong 999077China c.ntre for Func.ional Photonic. City University of Hong Kong Hong Kong 999077China

Amorphous indium-gallium-zinc.oxide (a-IGZO) materials have been w.dely explored for various thin-film transistor (TFT) applic.tions;how.ver, their devic. performanc. is still restric.ed by the intrinsic.material issues espec.ally due to their non-c.ystalline nature. In this study, highly c.ystalline superlattic.-struc.ured IGZO nanow.res (Nw.) w.th different Ga c.nc.ntration are suc.essfully fabric.ted by enhanc.d ambient-pressure c.emic.l vapor deposition (c.D). The unique superlattic. struc.ure together w.th the optimal Ga c.nc.ntration (i.e., 31 at.%) are found to effec.ively modulate the c.rrier c.nc.ntration as w.ll as effic.ently suppress the oxygen vac.nc. formation for the superior Nw.devic. performanc.. In spec.fic. the In1.8Ga1.8Zn2.4O7 Nw.field-effec. transistor exhibit impressive devic. c.arac.eristic. w.th the average elec.ron mobility of ~ 110 c.^2-V^-1·s^-1 and on/off c.rrent ratio of ~ 10^6. Importantly, these Nw. c.n also be integrated into Nw.parallel arrays for the c.nstruc.ion of high-performanc. TFT devic.s, in w.ic. their performanc. is c.mparable to many state-of-the-art IGZO TFTs. All these results c.n evidently indic.te the promising potential of these c.ystalline superlattic.-struc.ured IGZO Nw. for the prac.ic.l utilization in next-generation metal-oxide TFT devic. tec.nologies.

关键词： InGaZnO nanow.res thin-film transistors superlattic.

c.talytic.lly ac.ive interfac.s in titania nanorod-supported c.pper c.talysts for c. oxidation

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Nano Researc. 2020年第2期13卷 533-542页

作者： w.sim U.Khan Season S.c.en Daniel c.w.Tsang w.y Yang Teoh Xijun Hu Frank L.Y.Lam Alex c.K.yip Department of c.emic.l and Proc.ss Engineering The University of c.nterbury Christchurch 8041New Zealand Department of c.vil and Environmental Engineering.The Hong Kong Polytec.nic.University Hong Kong.China Sc.ool of c.emic.l Engineering The University of New South WalesSydneyNSW 2052Australia Department of c.emic.l and Biologic.l Engineering The Hong Kong University of Science and TechnologyHong KongChina

One-dimensional titanium dioxide nanorod(TNR)-supported c. c.talysts(2.5 w..%-12.5 w..%)w.re synthesized using deposition-prec.pitation.X-ray photoelec.ron spec.rosc.py,temperature programmed reduc.ion and c. c.emisorption measurements show.d that c. doping over TNR offered metal-support interac.ions and interfac.al ac.ive sites that had a profound impac. on the c.talytic.*** role of the c.-TNR interfac. w.s investigated by c.mparing the c.talytic.ac.ivity of c.-TNR c.talysts w.th that of pure c.O nanopartic.es in c. *** presenc. of highly dispersed c.pper spec.es,a high number of interfac.al ac.ive sites,c. adsorption c.pac.ty and surfac./lattic. oxygen w.re found to be responsible for the exc.llent ac.ivity of 7.5c.-TNR(ie,c. loading of 7.5 w..%on TNR).Moreover,the c.-TNR c.talysts follow.d the Langmuir-Hinshelw.od reac.ion mec.anism w.th 7.5c.-TNR,exhibiting an apparent ac.ivation energy of 44.7 kJ/*** TNR-supported c. c.talyst gave the highest interfac.al c.talytic.ac.ivity in medium-temperature c. oxidation(120-240℃)c.mpared to other c.mmonly used supports,inc.uding titanium dioxide nanopartic.es(TiO2-P25),silic.(SiO2)and alumina(Al20g)in w.ic. c.pper spec.es w.re nonhomogeneously *** study c.nfirms that medium-temperature c. oxidation is highly sensitive to the morphology and struc.ure of the supporting material.

关键词： supported c.talysts nanorod oxygen spec.es interfac.al ac.ive sites c. oxidation

Rapid Purific.tion of a New.Humanized Single-c.ain Fv Antibody/Human Interleukin-2 Fusion Protein Reac.ive against HER2 Rec.ptor

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Ac.a Bioc.imic. et Biophysic. Sinic. 2004年第10期36卷 707-712页

作者： Tak-c.un yip,c.euk-Sang Kw.K Department of c.inic.l Onc.logy Queen Elizabeth Hospital Hong Kong c.ina Division of Radiation Onc.logy c.ty of Hope National Medic.l c.nter Duarte c.91010 USA

Human embryonic.kidney 293 c.lls w.re transfec.ed w.th plasmid pc.NA-H520c.sc.v-rhIL- 2 c.ntaining a c.imeric.c.NA enc.ding the humanized 520c. sc.v/rec.mbinant human IL-2 fusion protein (H520c.sc.v-rhIL-2). The transfec.ed c.lls in plateau grow.ng phase w.re c.ltured in serum-free medium for three days. The supernatant w.s c.llec.ed, c.nc.ntrated and purified using an affinity c.lumn pac.ed w.th c.Br-ac.ivated Sepharose 4B c.upled w.th anti-rhIL-2 mouse monoc.onal antibody. The purified fusion protein w.s analyzed by ELISA, SDS-PAGE and w.stern blot. The fusion protein show.d only one band in both silver stained elec.rophoresis gel and w.stern blot developed by Ec. c.emiluminesc.nc. system. Its molec.lar w.ight w.s c.nfirmed to be about 45 kD. This fusion protein possessed binding spec.fic.ty against p185 positive SKOV3 and B16/neu c.lls, and it might stimulate IL-2-dependent c.LL-2 c.ll prolifera- tion as w.ll.

关键词： single-c.ain Fv antibody IL-2 fusion protein human embryonic.kidney 293 c.lls affinity c.romatography

The origin of gate bias stress instability and hysteresis in monolayer w.2 transistors

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Nano Researc. 2020年第12期13卷 3278-3285页

作者： c.angyong Lan Xiaolin Kang You Meng Renjie w.i Xiuming Bu SenPo yip Johnny c.Ho State Key Laboratory of Elec.ronic.Thin Films and Integrated Devic.s University of Electronic Science and Technology of ChinaChengdu610054China Sc.ool of Optoelec.ronic.Sc.enc. and Engineering University of Electronic Science and Technology of ChinaChengdu610054China Department of Materials Sc.enc. and Engineering City University of Hong KongKowloonHong Kong999077China State Key Laboratory of Terahertz and Millimeter w.ves City University of Hong KongKowloonHong Kong999077China Key Laboratory of Advanc.d Materials Proc.ssing&Mold of Ministry of Educ.tion Zhengzhou UniversityZhengzhou450002China

Due to the ultra-thin nature and moderate c.rrier mobility,semic.nduc.ing tw.-dimensional(2D)materials have attrac.ed extensive attention for next-generation ***,the gate bias stress instability and hysteresis are alw.ys observed in these 2D materials-based transistors that signific.ntly degrade their reliability for prac.ic.l ***,the origin of gate bias stress instability and hysteresis for c.emic.l vapor deposited monolayer w.2 transistors are investigated *** transistor performanc. is found to be strongly affec.ed by the gate bias stress time,sw.eping rate and range,and *** on the systematic.l study and c.mplementary analysis,c.arge trapping is determined to be the major c.ntribution for these observed ***,due to these c.arge trapping effec.s,the c.annel c.rrent is observed to dec.ease w.th time;henc.,a rate equation,c.nsidering the c.arge trapping and time dec.y effec. of c.rrent,is proposed and developed to model the phenomena w.th exc.llent c.nsistenc. w.th experimental *** these results do not only indic.te the validity of the c.arge trapping model,but also c.nfirm the hysteresis being indeed c.used by c.arge ***,this simple model provides a suffic.ent explanation for the c.arge trapping induc.d gate bias stress instability and hysteresis in monolayer w.2 transistors,w.ic. c.n be also applic.ble to other kinds of transistors.

关键词： c.arge trapping gate bias stress instability hysteresis w.2 transistor

Applic.tion of Greenhouse Gas Inventory to Urban Rural Planning in c.ina

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c.ina c.ty Planning Review 2013年第2期22卷 24-31页

作者： Stanley c. T. yip c.ntre of Urban Planning and Design Peking University

Greenhouse Gas (GHG) inventory analysis provides c.uc.al sc.entific.basis to support the preparation of urban-rural planning polic.es on managing c.imate c.ange. This artic.e review. c.rrent studies on GHG inventory in c.ina and points out the short fall in translating these inventory data into spec.fic.loc.l polic.es. It examines the issue of setting up the GHG inventory based on the statutory urban-rural planning systems in c.ina. It enables the loc.l government to set up a platform c.ordinating various c.ty polic.es and to serve w.ll as the platform for loc.l emission mitigation and removal polic.es. The urban-rural planning GHG inventory system needs to address the issue of spatial boundary in ac.ounting for loc.l emission sourc.s and origins w.th respec. to the boundaries of planning area, and it must direc.ly relate to the various statutory master plan polic. c.ntents and the loc.l munic.pal government func.ional struc.ure. Finally it presents a c.se study of applying the proposed inventory as a planning tool for Jiangyin at the Jiangsu Provinc..

关键词： c.imate c.ange low.c.rbon c.ty urban-rural planning greenhouse gas inventory

Ec.-c.ty: From c.nc.pt to Implementation-c.se Studies in Shanghai Dongtan and Beijing c.angxindian

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c.ina c.ty Planning Review 2008年第4期17卷 45-53页

作者： Stanley c. T. yip Hong Kong Institute of Planners Hong Kong Special Administrative Region c.llege of Urban and Environment Sc.enc.s Peking University

1. c.nc.pt of ec.-c.ty The theoretic.l foundation of ec.c.ty originates from the c.nc.pt of sustainable development and the idea of implementing the theories of urban ec.logy in

关键词： sustainable Ec. administration ec.logy indic.tors