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A flexible and high temperature tolerant strain sensor of La0.7Sr0.3MnO3/Mica

Journal of Materials Science & Technology 2020年第9期44卷 42-47页

作者： Min Guo Cheng Yang Dong Gao Qiang Li Aihua Zhang Jiajun Feng Hui Yang Ruiqiang Tao Zhen Fan Min Zeng Guofu Zhou xubing lu J-MLiu Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Guangdong Provincial Key Laboratory of Optical Information Materials and Institute of Electronic Paper Displays South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China National Center for International Research on Green Optoelectronics South China Normal UniversityGuangzhou 510006China Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China

Flexible sensors have been widely investigated due to their broad application prospects in various flexible ***,most of the presently studied flexible sensors are only suitable for working at room temperature,and their applications at high or low temperatures are still a big *** this work,we present a multimodal flexible sensor based on functional oxide La0.7Sr0.3MnO3(LSMO)thin film deposited on mica *** a strain sensor,it shows excellent sensitivity to mechanical bending and high bending durability(up to 3600 cycles).Moreover,the LSMO/Mica sensor also shows a sensitive response to the magnetic field,implying its multimodal sensing *** importantly,it can work in a wide temperature range from extreme low temperature down to 20K to high temperature up to 773 *** flexible sensor based on the flexible LSMO/mica hetero-structure shows great potential applications for flexible electronics using at extreme temperature environment in the future.

关键词： Flexible sensor Mica La0.7Sr0.3MnO3 High temperature Multimodal sensing

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Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf_(0.5)Zr_(0.5)O_(2)thin films by implementing W electrode

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Journal of Materials Science & Technology 2022年第9期104卷 1-7页

作者： Dao Wang Yan Zhang Jiali Wang Chunlai luo Ming Li Wentao Shuai Ruiqiang Tao Zhen Fan Deyang Chen Min Zeng Jiyan Y.Dai xubing B.lu J-M.Liu Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Department of Applied Physics The Hong Kong Polytechnic UniversityHung HomKowloonHong KongChina Laboratory of Solid State Microstructures and Innovation Centre of Advanced Microstructures Nanjing UniversityNanjing 210093China

This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W *** W/HZO/W capacitor shows excellent pristine 2 P_(r)values of 45.1 gC/cm^(2)at±6 V,which are much higher than those of TiN/HZO/W(34.4μC/cm^(2))and W/HZO/TiN(26.9μC/cm^(2))***,the maximum initial 2 P_(r)value of W/HZO/W capacitor can reach as high as 57.9μC/cm^(2)at±7.5 *** strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode,allowing for enhancement of o-phase ***,the W/HZO/W capacitor also exhibits higher endurance,smaller wake-up effect(10.1%)and superior fatigue properties up to 1.5×10^(10)cycles compared to the TiN/HZO/W and W/HZO/TiN *** improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN *** results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation,reduces oxygen vacancies,mitigates wake-up effect and improves reliability.

关键词： Hf_(0.5)Zr_(0.5)O_(2)films Ferroelectric polarization Endurance properties Thermal expansion coefficient W electrode

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Ferroelectricity in dopant-free HfO_(2) thin films prepared by pulsed laser deposition

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Journal of Materiomics 2022年第2期8卷 311-318页

作者： Yongjian luo Zhenxun Tang Xiaozhe Yin Chao Chen Zhen Fan Minghui Qin Min Zeng Guofu Zhou Xingsen Gao xubing lu Jiyan Dai Deyang Chen Jun-Ming Liu Institute for Advanced Materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China Guangdong Provincial Key Laboratory of Optical Information Materials and Technology South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China Department of Applied Physics The Hong Kong Polytechnic UniversityHung HomKowloonHong KongChina Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures Nanjing UniversityNanjing210093China

As a high-k material,hafnium oxide(HfO_(2))has been used in gate dielectrics for *** the discovery of polar phase in Si-doped HfO_(2) films,chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO_(2) based thin ***,the extra capping layer deposition,post-growth annealing and wake-up effect are usually required to arouse the ferroelectricity in HfO_(2) based thin films,resulting in the increase of complexity for sample synthesis and the impediment of device *** this study,the ferroelectricity is observed in non-capped dopant-free HfO_(2) thin films prepared by pulsed laser deposition(PLD)without post-growth *** adjusting the deposited temperature,oxygen pressure and thickness,the maximum polarization up to 14.7 m C/cm^(2) was obtained in 7.4 nm-thick *** fraction of orthorhombic phase,concentrations of defects and size effects are considered as possible mechanisms for the influences of ferroelectric *** study indicates that PLD is an effective technique to fabricate high-quality ferroelectric HfO_(2) thin films in the absence of chemical doping,capping layer deposition and post-growth annealing,which may boost the process of nonvolatile memory device application.

关键词： Hafnium oxide Pulsed laser deposition Ferroelectricity Orthorhombic phase

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Versatile SrFeO_(x) for memristive neurons and synapses

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Journal of Materiomics 2022年第5期8卷 967-975页

作者： Kaihui Chen Zhen Fan Jingjing Rao Wenjie Li Deming Wang Changjian Li Gaokuo Zhong Ruiqiang Tao Guo Tian Minghui Qin Min Zeng xubing lu Guofu Zhou Xingsen Gao Jun-Ming Liu Institute for Advanced Materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China Guangdong Provincial Key Laboratory of Optical Information Materials and Technology&National Center for International Research on Green Optoelectronics South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China School of Physics and Telecommunication Engineering South China Normal UniversityGuangzhou510006China Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen518055China Shenzhen Institute of Advanced Technology Chinese Academy of SciencesShenzhen518055China Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures Nanjing UniversityNanjing210093China

Spiking neural network(SNN)consisting of memristor-based artificial neurons and synapses has emerged as a compact and energy-efficient hardware solution for spatiotemporal information ***,it is challenging to develop memristive neurons and synapses based on the same material system because the required resistive switching(RS)characteristics are ***,it is shown that SrFeO_(x)(SFO),an intriguing material system exhibiting topotactic phase transformation between insulating brownmillerite(BM)SrFeO_(2).5 phase and conductive perovskite(PV)SrFeO_(3) phase,can be engineered into both neuronal and synaptic *** a BM-SFO single layer as the RS medium,the Au/BM-SFO/SrRuO_(3)(SRO)memristor exhibits nonvolatile RS behavior originating from the formation/rupture of PV-SFO filaments in the BM-SFO *** contrast,using a PV-SFO(matrix)/BM-SFO(interfacial layer)bilayer as the RS medium,the Au/PV-SFO/BM-SFO/SRO memristor exhibits volatile RS behavior originating from the interfacial BM-PV phase *** and neuronal characteristics are further demonstrated in the Au/BM-SFO/SRO and Au/PV-SFO/BM-SFO/SRO memristors,*** the SFO-based synapses and neurons,fully memristive SNNs are constructed by simulation,which show good performance on unsupervised image *** study suggests that SFO is a versatile material platform on which both neuronal and synaptic devices can be developed for constructing fully memristive SNNs.

关键词： Memristors Artificial synapses Artificial neurons Spiking neural network SrFeO_(x)

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Growth temperature dependence of crystal symmetry in Nb-doped BaTiO_(3) thin films

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Journal of Advanced Dielectrics 2013年第2期3卷 27-32页

作者： Young Heon Kim xubing lu Marco Diegel Roland Mattheis Dietrich Hesse Marin Alexe Max Planck Institute of Microstructure Physics Weinberg 2 D-06120 HalleGermany Korea Research Institute of Standards and Science(KRISS)Daejeon 305-340 Korea South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006P.R.China Institute of Photonic Technology(IPHT)D-07702 Jena Germany

Growth temperature effects on the microstructure of Nb-doped BaTiO_(3) thin films of the composition BaTi_(0.98)Nb_(0.02)O_(3) are studied using X-ray diffraction and transmission electron microscopy(TEM).Reciprocal space maps and electron diffraction patterns show that the a-axis lattice parameter increases and the c-axis parameter decreases with increasing growth temperature,indicating a decrease of ***-field TEM images show low and high densities of threading defects in films grown at low and high temperatures,*** observations are discussed in terms of a hindering of the cubic-to-tetragonal phase transition by a high defect density and a high unit cell volume.

关键词： Nb-doped BaTiO_(3) crystal symmetry threading defect X-ray diffraction transmission electron microscopy

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Impact of annealing temperature on the ferroelectric properties of W/Hf_(0.5)Zr_(0.5)O_(2)/W capacitor

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Chinese Physics B 2023年第9期32卷 492-497页

作者：王岛张岩郭永斌尚真真符方健陆旭兵 College of Science Qiongtai Normal UniversityKey Laboratory of Child Cognition and Behavior Development of Hainan ProvinceHaikou 571127China College of Electronic and Electrical Engineering Henan Normal UniversityXinxiang 453007China Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Key Laboratory of UWB and THz of Shandong Academy of Sciences Institute of AutomationQilu University of TechnologyJinan 250014China

Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin ***,we systematically investigate the impact of the annealing process,with temperature varied from 350℃to 550℃,on the electricity,ferroelectricity and reliability of a Hf_(0.5)Zr_(0.5)O_(2)(HZO;7.5 nm)film *** was found that HZO film annealed at a low temperature of 400℃can effectively suppress the formation of the monoclinic phase and reduce the leakage *** film annealed at 400℃also exhibits better ferroelectric properties than those annealed at 350℃and 550℃.Specifically,the 400℃-annealed HZO film shows an outstanding 2Pr value of 54.6μC·cm^(-2)at±3.0 MV·cm^(-1),which is relatively high compared with previously reported values for HZO film under the same electric field and annealing *** the applied electric field increases to±5.0 MV·cm^(-1),the 2Pr value can reach a maximum of 69.6μC·cm^(-2).In addition,the HZO films annealed at 400℃and 550℃can endure up to bout 2.3×10^(8)cycles under a cycling field of 2.0 MV·cm^(-1)before the occurrence of *** the 400℃-annealed HZO film,72.1%of the initial polarization is maintained while only 44.9%is maintained in the 550℃-annealed HZO *** work demonstrates that HZO film with a low crystallization temperature(400℃)has quite a high ferroelectric polarization,which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.

关键词： Hf_(0.5)Zr_(0.5)O_(2)thin film annealing temperature ferroelectric polarization endurance

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Tensile stress regulated microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2) films

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Chinese Physics B 2023年第12期32卷 61-66页

作者：霍思颖郑俊锋刘远洋李育姗陶瑞强陆旭兵刘俊明 Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China

The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric ***,the complete mechanism underlying its ferroelectricity remains to be fully *** this study,we conducted a systematic study on the microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films with various annealing rates in the rapid thermal *** was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size,reduced surface roughness and a higher portion of orthorhombic ***,these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing *** grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films,which was weakened with decreasing annealing *** findings revealed that this internal stress,along with the stress originating from the top/bottom electrode,plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin *** carefully controlling the annealing rate,we could effectively regulate the tension stress within HZO thin films,thus achieving precise control over their ferroelectric *** work established a valuable pathway for tailoring the performance of HZO thin films for various applications.

关键词： HfO_(2) ferroelectric materials tension stress annealing

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铁电场效应晶体管:原理、材料设计与研究进展

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华南师范大学学报（自然科学版） 2012年第3期44卷 1-11页

作者：陆旭兵李明刘俊明华南师范大学华南先进光电子研究院广东广州510006

系统阐述了铁电场效应晶体管(FeFET)的工作原理,重点介绍了铁电层和缓冲层的材料设计的基本原理、主要的铁电层材料和缓冲层材料及其所对应的FeFET的器件性能.并介绍了基于FeFET的FeCMOS逻辑电路、FeNAND闪存电路、基于氧化物半导体和... 详细信息

系统阐述了铁电场效应晶体管(FeFET)的工作原理,重点介绍了铁电层和缓冲层的材料设计的基本原理、主要的铁电层材料和缓冲层材料及其所对应的FeFET的器件性能.并介绍了基于FeFET的FeCMOS逻辑电路、FeNAND闪存电路、基于氧化物半导体和有机半导体的FeFET的最新研究成果.最后对FeFET的未来研究作出展望.

关键词：非易失性存储器铁电场效应晶体管闪存有机半导体氧化物半导体

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浮栅型有机非易失性存储器的研究

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华南师范大学学报（自然科学版） 2013年第6期45卷 85-91页

作者：陆旭兵邵亚云刘俊明华南师范大学华南先进光电子研究院广东广州510006 南京大学固体微结构物理国家重点实验室江苏南京210093

有机柔性电子器件具有低制造成本、大面积、可柔性折叠等优点,是近年来国内外学术界和工业界的研究热点.有机非易失存储器是一种重要的有机柔性电子器件.介绍了浮栅型有机非易失性存储器件的工作原理;综述了国内外学术界对浮栅型有机非... 详细信息

有机柔性电子器件具有低制造成本、大面积、可柔性折叠等优点,是近年来国内外学术界和工业界的研究热点.有机非易失存储器是一种重要的有机柔性电子器件.介绍了浮栅型有机非易失性存储器件的工作原理;综述了国内外学术界对浮栅型有机非易失性存储器的研究进展、存在的问题及解决对策.

关键词：有机薄膜晶体管非易失性存储器浮栅高K栅介质有机半导体

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Experimental search for high-performance ferroelectric tunnel junctions guided by machine learning

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Journal of Advanced Dielectrics 2022年第3期12卷 35-47页

作者： Jingjing Rao Zhen Fan Qicheng Huang Yongjian luo Xingmin Zhang Haizhong Guo Xiaobing Yan Guo Tian Deyang Chen Zhipeng Hou Minghui Qin Min Zeng xubing lu Guofu Zhou Xingsen Gao Jun-Ming Liu Institute for Advanced Materials South China Normal UniversityGuangzhou 510006P.R.China Guangdong Provincial Key Laboratory of Optical Information Materials and Technology South China Normal University Guangzhou 510006P.R.China Shanghai Institute of Applied Physics Chinese Academy of SciencesShanghai 201204P.R.China§School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450001P.R.China Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province Hebei University Baoding 071002P.R.China Laboratory of Solid State Microstructures and Innovation Center of Advanced Nanjing 210093P.R.China

Ferroelectric tunnel junction(FTJ)has attracted considerable attention for its potential applications in nonvolatile memory and neuromorphic ***,the experimental exploration of FTJs with high ON/OFF ratios is a challenging task due to the vast search space comprising of ferroelectric and electrode materials,fabrication methods and conditions and so ***,machine learning(ML)is demonstrated to be an effective tool to guide the experimental search of FTJs with high ON/OFF ratios.A dataset consisting of 152 FTJ samples with nine features and one target attribute(i.e.,ON/OFF ratio)is established for ML *** various ML models,the gradient boosting classification model achieves the highest prediction *** the feature importance analysis based on this model with the association rule mining,it is extracted that the utilizations of{graphene/graphite(Gra)(top),LaNiO_(3)(LNO)(bottom)}and{Gra(top),Ca_(0.96)Ce_(0.04)MnO_(3)(CCMO)(bottom)}electrode pairs are likely to result in high ON/OFF ratios in ***,two previously unexplored FTJs:Gra/BaTiO_(3)(BTO)/LNO and Gra/BTO/CCMO,are predicted to achieve ON/OFF ratios higher than *** by the ML predictions,the Gra/BTO/LNO and Gra/BTO/CCMO FTJs are experimentally fabricated,which unsurprisingly exhibit≥1000 ON/OFF ratios(~8540 and~7890,respectively).This study demonstrates a new paradigm of developing high-performance FTJs by using ML.

关键词： Machine learning ferroelectric tunnel junctions ON/OFF ratio nonvolatile memory

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