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Application of artificial synapse based on all-inorganic perovskite memristor in neuromorphic computing

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Nano Materials Science 2024年第1期6卷 68-76页

作者： Fang Luo Wen-Min Zhong xin-gui tang Jia-Ying Chen Yan-Ping Jiang Qiu-Xiang Liu School of Physics&Optoelectric Engineering Guangdong University of TechnologyGuangzhou Higher Education Mega CenterGuangzhou510006China

Artificial synapse inspired by the biological brain has great potential in the field of neuromorphic computing and artificial intelligence.The memristor is an ideal artificial synaptic device with fast operation and good tolerance.Here,we have prepared a memristor device with Au/CsPbBr_(3)/ITO structure.The memristor device exhibits resistance switching behavior,the high and low resistance states no obvious decline after 400 switching times.The memristor device is stimulated by voltage pulses to simulate biological synaptic plasticity,such as long-term potentiation,long-term depression,pair-pulse facilitation,short-term depression,and short-term potentiation.The transformation from short-term memory to long-term memory is achieved by changing the stimulation frequency.In addition,a convolutional neural network was constructed to train/recognize MNIST handwritten data sets;a distinguished recognition accuracy of~96.7%on the digital image was obtained in 100 epochs,which is more accurate than other memristor-based neural networks.These results show that the memristor device based on CsPbBr3 has immense potential in the neuromorphic computing system.

关键词： Memristor CsPbBr_(3) Resistive switching Artificial synapse Neuromorphic computing

Composition-tailor induced electrocaloric effect near room temperature in(Pb,Ba)HfO_(3)films

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Journal of Materiomics 2023年第3期9卷 502-509页

作者： Xian-Xiong Huang Peng-Zu Ge Tian-Fu Zhang Qiu-Xiang Liu Yan-Ping Jiang Zhen-Hua tang Xiao-Bin Guo xin-gui tang School of Physics&Optoelectric Engineering Guangdong University of TechnologyGuangzhou510006China Jewelry Institute Guangzhou Panyu PolytechnicGuangzhou511483China School of Materials Science and Engineering Harbin Institute of TechnologyShenzhenGuangdong518055China

More and more researchers start to pay attention to the electrocaloric temperature change(DT)in polar materials,which is caused by an applied electric field.In this paper,Ba-doped PbHfO_(3)(PBH)films were prepared by sol-gel method.Their components,microstructures,dielectric polarization and electro-caloric effects(ECEs)were investigated.With the addition of Ba^(2+),PBH films went from antiferroelectric(AFE)to ferroelectric(FE).At the same time,their dielectric peaks shifted toward lower temperature.The maximum DT obtained in Pb_(0.8)Ba_(0.2)HfO_(3)FE film is 41.1 K,which is an order of magnitude larger than PbHfO_(3)film(△T<4 K at 50℃)and Pb_(0.9)Ba_(0.1)HfO_(3)film(△T<4 K at 120℃).In order to explain this phenomenon,the Landau-Devonshire theory was adopted.Our analysis shows that the rapid variation of energy barrier height near the phase transition temperature is beneficial to obtain large polarization change and high△T,which is needed in solid-state cooling devices.

关键词： Ferroelectric Electrocaloric effects Landau-Devonshire theory Solid-state cooling

Excellent energy storage properties realized in novel BaTiO_(3)-based lead-free ceramics by regulating relaxation behavior

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Journal of Materiomics 2023年第5期9卷 910-919页

作者： Peng-Zu Ge Zhi-Gang Liu Xian-Xiong Huang xin-gui tang Zhen-Hua tang Shui-Feng Li Qiu-Xiang Liu Yan-Ping Jiang Xiao-Bin Guo School of Physics&Optoelectric Engineering Guangdong University of TechnologyGuangzhou Higher Education Mega CenterGuangzhou510006China Guangzhou Panyu Polytechnic Guangzhou511483China

BaTiO_(3)(BT)has attracted extensive attention among advanced lead-free ferroelectric materials due to its unique dielectric and ferroelectric properties.However,the enormous remanent polarization and coercive field severely impede the improvement of its energy storage capabilities.Here,the BaTiO_(3)e-Bi(Zn_(0.5)Hf_(0.5))O_(3)(BT-BZH)ceramics with high breakdown field strength and remarkable relaxation characteristics can be obtained by introducing the composite component BZH in BT to regulate the phase structure and grain size of the ceramics.The findings demonstrate that the improvement of energy storage performance is related to the increase of relaxation behavior.A large energy storage density(Wrec~3.62 J/cm^(3))along with superior energy storage efficiency(h~88.5%)is achieved in 0.88BT-0.12BZH relaxor ceramics only at 240 kV/cm.In addition,the sample suggests superior thermal stability and frequency stability within 25e115℃and 1e500 Hz,respectively.Furthermore,the outstanding chargedischarge properties with an ultrafast discharge time(100 ns),large discharged energy density(1.2 J/cm^(3)),impressive current density(519.4 A/cm^(2))and power density(31.1 MW/cm^(3))under the electric field of 120 kV/cm are achieved in studied ceramics.The excellent energy storage performance of BT-BZH ceramics provides a promising platform for the application of lead-free energy-storage materials.

关键词： BT-based ceramics Relaxor Energy storage Charge-discharge

Enhanced energy-storage density and temperature stability of Pb_(0.89)La_(0.06)Sr_(0.05)(Zr_(0.95)Ti_(0.05))O_(3) anti-ferroelectric thin film capacitor

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Journal of Materiomics 2022年第1期8卷 239-246页

作者： Zhenhua tang Songcheng Hu Dijie Yao Zeli Li Zhigang Liu Xiaobin Guo Biao Lu Jingmin Fan xin-gui tang Sheng-Guo Lu Ju Gao School of Physics and Optoelectric Engineering Guangdong University of TechnologyGuangzhou Higher Education Mega CenterGuangzhou510006China Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter School of Materials and EnergyGuangdong University of TechnologyGuangzhou510006China School of Automation Guangdong University of TechnologyGuangzhou510006China Department of Physics The University of Hong KongPokfulam RoadHong KongChina

As the fundamental energy storage components in electronic systems,dielectric capacitors with high power densities were demanded.In this work,the anti-ferroelectric Pb_(0.89)La_(0.06)Sr_(0.05)(Zr_(0.95)Ti_(0.05))O_(3)(PLSZT)ceramics and thin film capacitor were successfully fabricated by a solid-state reaction route and pulsed laser deposition method,respectively.The ferroelectric,dielectric,energy-storage properties,and temperature stability of anti-ferroelectric PLSZT capacitor were investigated in detail.By compared with the PLSZT ceramic(energy storage density is 1.29 J/cm^(3) with an efficiency of 78.7%under 75 kV/cm),the anti-ferroelectric PLSZT thin film capacitors exhibited the enhanced energy storage density of 52.6 J/cm^(3) with efficiency of 67.7%under an electric field as high as 2068.9 kV/cm,and the enhanced energy-storage temperature stabilities from room temperature(RT)to more than 200℃ were demonstrated,and the oxygen defects mechanism and size effect were discussed.Moreover,the fast charging(~0.05 μs)and discharging(~0.15 μs)time were certified for the anti-ferroelectric PLSZT film capacitor.These findings broaden the horizon for PLSZT anti-ferroelectrics in high energy storage properties and show promising for manufacturing pulse power capacitor.

关键词： PLSZT anti-Ferroelectrics Pulsed laser deposition(PLD) Ferroelectric/dielectric properties Energy storage Temperature stability

Oxygen-vacancy-related dielectric relaxation behaviours and impedance spectroscopy of Bi(Mg_(1/2)Ti_(1/2))O_(3) modified BaTiO_(3) ferroelectric ceramics

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Journal of Materiomics 2018年第3期4卷 194-201页

作者： Ming-Ding Li xin-gui tang Si-Ming Zeng Yan-Ping Jiang Qiu-Xiang Liu Tian-Fu Zhang Wen-Hua Li School of Physics&Optoelectric Engineering Guangdong University of TechnologyGuangzhou Higher Education Mega CentreGuangzhou 510006People's Republic of China Laboratory Teaching Centre Guangdong University of TechnologyGuangzhou Higher Education Mega CentreGuangzhou 510006People's Republic of China

Lead-free ferroelectric ceramics(1-x)BaTiO_(3-x)Bi(Mg_(1/2)Ti_(1/2))O_(3)(x=0.0-0.07)were synthesized by conventional solid state reaction method and the correlation of structure,dielectric,ferroelectric and impedance properties were investigated.It was found that T_(m) andε_(m) showed decreasing trend with the increase of BMT content.The high-temperature dielectric relaxation behaviour was observed in all the samples.The activation energy calculated from impedance(E_(a))and conductivity(E_(cond)),which revealed that the relaxation behaviours were linked with the migration of OVs.The values of E_(a)were almost equivalent to Econd.It was concluded that the short-range hopping of oxygen vacancy contributed to the dielectric relaxation and long-distance movement of doubly ionized oxygen vacancies contributed to the conduction.On the other hand,with increasing BMT contents,it was found that P-E loops became slimmer and slimmer,which indicated the increase of relaxor behaviour.The temperature dependence of P-E loops for 0.98BT-0.02BMT ceramic clearly showed the transition process from ferroelectric to relaxed ferroelectrics.

关键词： BTeBMT ceramic Dielectric Ferroelectric Impedance Oxygen vacancies

Composition dependence of giant electrocaloric effect in PbxSr1-xTiO_(3) ceramics for energy-related applications

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Journal of Materiomics 2019年第1期5卷 118-126页

作者： Peng-Zu Ge Xiao-Dong Jian Xiong-Wei Lin xin-gui tang Zhi Zhu Qiu-Xiang Liu Yan-Ping Jiang Tian-Fu Zhang Sheng-Guo Lu School of Physics and Optoelectric Engineering Guangdong University of TechnologyGuangzhou Higher Education Mega CentreGuangzhou510006China School of Materials and Energy Guangdong University of TechnologyGuangzhou Higher Education Mega CentreGuangzhou510006China

Pb_(x)Sr_(1-x)TiO_(3)(x=0.30,0.35,0.40,0.45,0.50 and 0.55)ceramics were fabricated by a solid-state reaction route.Xeray diffraction data at room temperature show PST samples shift from cubic to tetragonal phase with the increase of Pb^(2+) content.The microstructures were observed by scanning electron microscopy.Dielectric measurement was employed to investigate the ferroelectriceparaelectric phase transition behavior.Temperature dependent polarizationeelectric field hysteresis loops were conducted to study the electrocaloric effect(ECE)of the ferroelectric ceramics by indirect methods over a wide temperature range.Direct measurement of temperature change(DT)at room temperature for all samples can achieve 0.79e1.86 K.What's more,a giant ECE(△T=2.05 K,EC strength(△T/△E)=0.51×10^(-6) K m/V,under 40 kV/cm)was obtained in the sample of x=0.35 near phase transition temperature.Our results suggest that the ceramics are promising cooling materials with excellent EC properties for energy related applications.

关键词： Pb_(x)Sr_(1-x)TiO_(3)ceramics Electrocaloric effect Phase transition Energy applications

High-performance AZO Flexible Ultraviolet Photodetector Fabricated by Radio Frequency Magnetron Sputtering

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High-performance AZO Flexible Ultraviolet Photodetector Fabr...

Current status of liver transplantation for human immunodeficiency virus-infected patients in China's Mainland

第六届粤港澳真空科技创新发展论坛暨先进微纳制造技术与前...

作者： Xiao-ling Lu Xiao-bin Guo Feng-chao Su Zheng Su Wen-hai Qiu Yan-Ping Jiang Wen-hua Li Zhen-hua tang xin-gui tang School of Physics & Optoelectric Engineering Guangdong University of TechnologyGuangzhou Higher Education Mega Centre

Al-doped ZnO(AZO) flexible ultraviolet(UV) photodetectors were fabricated on polyethylene terephthalate substrates by radio frequency magnetron sputtering.The high photocurrent-to-dark current ratio of the photodetector indicates excellent photoresponse performance under UV illumination.Under a series of tensile strains of 0,0.12,0.2,and 0.33,the photocurrent increased gradually,and the sensitivity and linear dynamic range increased by 10 times and 1.5 times,respectively.The rise time and decay time are 0.2 s and 0.3 s under 23.5 mW/cm at 4 V bias,with excellent reproducibility and stability.The energy band diagrams before and after applying tensile strain are analyzed to further study the modulation behavior at the interface by the piezo-phototronic effect.The results demonstrate that the piezo-phototronic effect is of great value for the optimization and regulation of UV photodetectors performance on AZO thin film materials.

关键词： Al-doped ZnO flexible ultraviolet photodetectors radio frequency magnetron sputtering piezo-phototronic effect

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World Journal of Gastroenterology 2024年第14期30卷 1958-1962页

作者： Jian-xin tang Dong Zhao Department of Liver Surgery and Organ Transplantation Center Shenzhen Third People’s HospitalThe Second Affiliated Hospital of Southern University of Science and TechnologyNational Clinical Research Center for Infectious DiseaseShenzhen 518000Guangdong ProvinceChina

According to the report from the Chinese Center for Disease Control and Prevention,the prevalence of human immunodeficiency virus(HIV)infection exceeded 1.2 million individuals by the year 2022,with an annual increase of about 80000 cases.The overall prevalence of hepatitis B surface antigen among individuals co-infected with HIV reached 13.7%,almost twice the rate of the general population in China.In addition to the well-documented susceptibility to opportunistic infections and new malignancies,HIV infected patients frequently experience liver-related organ damage,with the liver and kidneys being the most commonly affected.This often leads to the development of end-stage liver and kidney diseases.Therefore,organ transplantation has emerged as an important part of active treatment for HIV infected patients.However,the curative effect is not satisfactory.HIV infection has been considered a contraindication for organ transplantation.Until the emergence of highly active anti-retroviral therapy in 1996,the once intractable replication of retrovirus was effectively inhibited.With prolonged survival,the failure of important organs has become the main cause of death among HIV patients.Therefore,transplant centers worldwide have resu-med exploration of organ transplantation for HIV-infected individuals and reached a positive conclusion.This study provides an overview of the current landscape of HIV-positive patients receiving liver transplantation(LT)in main-land China.To date,our transplant center has conducted LT for eight end-stage liver disease patients co-infected with HIV,and all but one,who died two months postoperatively due to sepsis and progressive multi-organ failure,have survived.Comparative analysis with hepatitis B virus-infected patients during the same period revealed no statistically significant differences in acute rejection reactions,cytomegalovirus infection,bacteremia,pulmonary infections,acute kidney injury,new-onset cancers,or vascular and biliary complications.

关键词： Liver transplantation Human immunodeficiency virus Infection Hepatitis B virus End-stage liver disease China'Mainland

Microglial autophagy in neurogenesis:a new player in Alzheimer's disease

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Neural Regeneration Research 2024年第12期19卷 2573-2574页

作者： xin tang Aarti Nagayach Chenran Wang Department of Cancer Biology University of Cincinnati College of MedicineCincinnatiOHUSA

While extensive studies have illuminated the impact of Alzheimer's disease(AD) on neuronal survival,there is growing evidence that abnormal postnatal neurogenesis in early AD brains contributes to disease progression.Postnatal neurogenesis serves as a mechanism to replace dead or damaged neurons.New neurons generated from neural stem cells(NSCs) in the subgranular zone(SGZ) of the dentate gyrus integrate into the existing hippocampal circuit.

关键词： Alzheimer replace integrate