检索结果-南通市图书馆

Science China(Information Sciences) 2025年第1期68卷 400-401页

作者： Chenyu LIU Yibo WANG Wenhui XU Shuqi HUANG Chunxiao YU Zeyu YANG Xiaole JIA Xiaoxi LI Bochang LI Zhengdong LUO Cizhe FANG Yan LIU Tiangui You xin ou Genquan HAN School of Microelectronics Xidian University Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Hangzhou Institute of Technology Xidian University

Titanium/Gold （Ti/Au） metals have been widely employed as ohmic metal contacts on n+Ga2O3,exhibiting the specific contact resistance （ρc） of 10-5-10-6Ω·cm2[1].But previous studies have revealed the presence of a defective Ga2O3layer and reactive Ti-Ga2O3layer at the annealed Ti/*** an interfacial layer can afect the performance of ohmic contact,which may become more pronounced in power devices subjected to electrical stress and high-frequency ***,there have been no reports on the impact of bias stress effects and dynamic degradation of Ti/Au ohmic contacts on n+Ga2O3.

关键词：

同方期刊数据库

Reconstruction of complex orbital fracture with titanium implants

在线全文

学校读者我要写书评

暂无评论

International Journal of Ophthalmology(English edition) 2012年第4期5卷 488-492页

作者： Wen-Shu Yi, xin-Rong ou Department of Ophthalmology Xiangya Hospital Central South University Changsha 410008 Hunan Province China Department of Neurologic Xiangya Hospital Central South University Changsha 410008 Hunan Province China Department of Oral and Maxillofacial Xiangya Hospital Central South University Changsha 410008 Hunan Province China

AIM: To evaluate the effectiveness and safety of complex orbital fracture reconstruction with titanium implants. METHODS: A retrospective review of 46 patients treated with complex orbital fractures reconstruction using titanium implants from January 2005 to December 2008 was conducted. The following data were recorded: age, gender, mechanism of injury, preoperative and postoperative orbital CT, visual acuity, diplopia, ocular motility and Hertel exophthalmometer. RESULTS: The most common cause was motor vehicle accident (47.8%), followed by industrial injury (30.4%). All patients had improved appearance after operation and CT scan at one week after operation showed the fracture defects of orbit and neighboring areas had been reconstructed. Forty-six cases had various degrees of enophthalmos before operation. Among them, 32 cases were completely corrected, 11 cases improved obviously and 3 cases had no improvement after operation. Thirty-six patients with visual acuity =20/60 revealed diplopia of various degrees, including 26 patients had diplopia in right ahead and/or reading positions. At the sixth month after operation, diplopia disappeared in five patients, 7 patients still had diplopia in right ahead and/or reading positions, 14 patients had diplopia in positions rather than right ahead and reading positions (20 degrees). All patients had various degrees of ocular motility disorders before operation. At the sixth month after operation, eyeball movement disorder disappeared in 9 patients, 31 patients showed improvement and 6 patients had no improvement. Complications of implant infection, rejection and displacement were not reported after operation. CONCLUSION: The application of titanium implants in the repair of complex orbital fractures greatly improves the appearance and functional results, which is a favorable material for plastic surgery of complex orbital fracture.

关键词： complex orbital fractures titanium reconstruction

Oxygen gettering in Si by He ion implantation-induced cavity layer

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Nuclear Science and Techniques 2009年第4期20卷 202-207页

作者： ou xin ZHANG Bo WU Aimin ZHANG Miao WANG Xi State Key Laboratory of Functional Materials for lnformatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

Oxygen gettering in Si by the He induced cavity layer was investigated in this work.A cavity layer was generated in Si sample by He implantation and *** morphology of the cavity layer depending on the dose of He and the annealing temperature was presented in the *** cavity layer may serve as an efficient oxygen gettering layer during the high temperature oxidation process and accumulate the oxygen from the annealing atmosphere as well as the implanted *** phenomenon gives the idea that the cavity layer can be employed to define the oxide formation in Si and further to facilitate the formation of the buried oxide layer(BOX) in Si aiming at the Si-on-Insulator(SOI) structure *** oxygen gettering ability of the cavity layer in Si was investigated by cross section transmission electron microscopy and auger electron spectroscopy.

关键词：氦离子空穴核技术能级

维普期刊数据库

Objectness Region Enhancement Networks for Scene Parsing

在线全文

学校读者我要写书评

暂无评论

Journal of Computer Science & Technology 2017年第4期32卷 683-700页

作者： xin-Yu ou Ping Li He-Fei Ling Si Liu Tian-Jiang Wang School of Computer Science and Technology Huazhong University of Science and Technology Wuhan 430074 China Institute of Information Engineering Chinese Academy of Sciences Beijing 100091 China Cadres Online Learning Institute of Yunnan Province Yunnan Open University Kunming 650223 China

Semantic segmentation has recently witnessed rapid progress, but existing methods only focus on identifying objects or instances. In this work, we aim to address the task of semantic understanding of scenes with deep learning. Different from many existing methods, our method focuses on putting forward some techniques to improve the existing algorithms, rather than to propose a whole new framework. Objectness enhancement is the first effective technique. It exploits the detection module to produce object region proposals with category probability, and these regions are used to weight the parsing feature map directly. 'Extra background' category, as a specific category, is often attached to the category space for improving parsing result in semantic and instance segmentation tasks. In scene parsing tasks, extra background category is still beneficial to improve the model in training. However, some pixels may be assigned into this nonexistent category in inference. Black-hole filling technique is proposed to avoid the incorrect classification. For verifying these two techniques, we integrate them into a parsing framework for generating parsing result. We call this unified framework as Objectness Enhancement Network (OENet). Compared with previous work, our proposed OENet system effectively improves the performance over the original model on SceneParse150 scene parsing dataset, reaching 38.4 mIou (mean intersection-over-union) and 77.9% accuracy in the validation set without assembling multiple models. Its effectiveness is also verified on the Cityscapes dataset.

关键词： objectness region enhancement black-hole filling scene parsing instance enhancement objectness region proposal

High-power,electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si(100)heterogeneous substrate

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Light(Science & Applications) 2024年第8期13卷 1512-1523页

作者： Jialiang Sun Jiajie Lin Min Zhou Jianjun Zhang Huiyun Liu Tiangui You xin ou National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyCASShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences100049 BeijingChina College of Information Science and Engineering Jiaxing UniversityJiaxing 314001China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences100190 BeijingChina Department of Electronic and Electrical Engineering University College LondonLondon WC1E 7JEUK

A reliable,efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon *** the impressive advances that have been made in developing 1.3-μm Si-based quantum dot(QD)lasers,extending the wavelength window to the widely used 1.55-μm telecommunication region remains *** this study,we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si(100)(InPOS)heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si *** ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth,namely lattice and domain *** this approach,we achieved state-of-the-art performance of the electrically-pumped,continuouswave(CW)1.55-μm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm^(-2),and output power exceeding 155mW per facet without facet coating in CW *** lasing at 120℃ and pulsed lasing at over 130℃ were *** generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

关键词： pumped power quantum

Waveguide-coupled deterministic quantum light sources and post-growth engineering methods for integrated quantum photonics

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chip 2022年第3期1卷 28-49页

作者： Xu-Dong Wang Yi-Fan Zhu Ting-Ting Jin Wei-Wen ou xin ou Jia-Xiang Zhang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200092China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Integrated photonic quantum circuits(IPQCs)have attracted increasing attention in recent years due to their widespread applications in quantum information *** the most envisioned quantum technologies such as quantum communications,quantum computer and quantum simulations have placed a strict constraint on the scalability of chip-integrated quantum light *** introducing sizeconfined nanostructures or crystal imperfections,low-dimensional semiconductors have been broadly explored as chip-scale deterministic single-photon sources(SPSs).Thus far a variety of chip-integrated deterministic SPSs have been investigated across both monolithic and hybrid photonic platforms,including molecules,quantum dots,color centers and two-dimensional *** the rapid development of the chip-scale generation of single photons with deterministic quantum emitters,the field of IPQCs has raised new challenges and *** this paper,we highlight recent progress in the development of waveguide-coupled deterministic SPSs towards scalable IPQCs,and review the post-growth tuning techniques that are specifically developed to engineer the optical properties of these WG-coupled *** prospects on stringent requirement for the quantum engineering toolbox in the burgeoning field of integrated photonics are also discussed.

关键词： Single photon sources On-chip Integrated circuits Post-growth engineering Low-dimensional semiconductors

β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China(Physics,Mechanics & Astronomy) 2020年第7期63卷 93-96页

作者： YiBo Wang WenHui Xu TianGui You FengWen Mu HaoDong Hu Yan Liu Hao Huang Tadatomo Suga GenQuan Han xin ou Yue Hao The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China The State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The Collaborative Research Center Meisei UniversityHino shiTokyo 191-8506Japan

β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si(GaOISi)substrate fabricated by ion-cutting ***(E)-and depletion(D)-modeβ-Ga2O3 transistors are realized on by varying the channel thickness(Tch).E-mode GaOISi transistor with a Tchof 15 nm achieves a high threshold voltage VTHof^8 *** the same T increase,GaOISi transistors demonstrate more stable ON-current IONand OFF-current IOFFperformance compared to the reported devices on bulk Ga2O3 *** on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C,respectively.

关键词： Ga203,1MOSFET thermal conductivity heterogeneous Ga2O3-Al2O3-Si

维普期刊数据库

1~H NMR-based serum metabolic profiling in compensatedand decompensated cirrhosis

在线全文

学校读者我要写书评

暂无评论

World Journal of Gastroenterology 2012年第3期18卷 285-290页

作者： Su-Wen Qi Zhi-Guang Tu Wu-Jian Peng Lin-Xian Wang xin ou-Yang An-Ji Cai Yong Dai Key Laboratory of Laboratory Medical Diagnostics Ministry of Education Chongqing Medical University Chongqing 410006 China Second Clinical Medical College Jinan University Guangzhou 510632 Guangdong Province China

AIM: To study the metabolic profiling of serum samples from compensated and decompensated cirrhosis patients. METHODS: A pilot metabolic profiling study was conducted using three groups: compensated cirrhosis patients (n = 30), decompensated cirrhosis patients (n = 30) and healthy controls (n = 30). A 1H nuclear magnetic resonance (NMR)-based metabonomics approach was used to obtain the serum metabolic profiles of the samples. The acquired data were processed by multivariate principal component analysis and orthogonal partial least-squares discriminant analysis (OPLS-DA). RESULTS: The OPLS-DA model was capable of distinguishing between decompensated and compensated cirrhosis patients, with an R2Y of 0.784 and a Q2Y of 0.598. Twelve metabolites, such as pyruvate, phenylala-nine and succinate, were identified as the most influential factors for the difference between the two groups. The validation of the diagnosis prediction showed that the accuracy of the OPLS-DA model was 85% (17/20). CONCLUSION: 1H NMR spectra combined with pattern recognition analysis techniques offer a new way to diagnose compensated and decompensated cirrhosis in the future.

关键词： Liver cirrhosis Metabolic profiling Orthogo- nal partial least-squares discriminant analysis

Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2022年第8期65卷 238-246页

作者： Tingting JIN Jiajie LIN Tiangui You Xiaolei ZHANG Hao LIANG Yifan ZHU Jialiang SUN Hangning SHI Chaodan CHI Min ZHou Robert KUDRAWIEC Shumin WANG xin ou State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences College of Information Science and Engineering Jiaxing University School of Information Science and Technology Shanghai Tech University Department of Semiconductor Materials Engineering Wroclaw University of Science and Technology Department of Microtechnology and Nanoscience Chalmers University of Technology

Heterogeneous integration of InP and GaS b on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nmthick GaS b thin layers were successfully transferred onto the Si substrates to form high-quality and ultrasmooth InP/Si and GaS b/Si templates using molecular beam epitaxy(MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaS b thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaS b/Si template, respectively. Thus, the chemical mechanical polishing(CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.

关键词： heterogeneous integration InP/Si GaSb/Si MBE ion-slicing technique selective chemical etching

Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-oninsulator platform

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Light(Science & Applications) 2022年第12期11卷 3059-3068页

作者： Chengli Wang Jin Li Ailun Yi Zhiwei Fang Liping Zhou Zhe Wang Rui Niu Yang Chen Jiaxiang Zhang Ya Cheng Junqiu Liu Chun-Hua Dong xin ou State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences200050 ShanghaiChina The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences100049 BeijingChina CAS Key Laboratory of Quantum Information University of Science and Technology of China230026 HefeiChina CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China230026 HefeiChina The Extreme Optoelectromechanics Laboratory(XXL) School of Physics and Electronic ScienceEast China Normal University200241 ShanghaiChina State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultraintense Laser Science Shanghai Institute of Optics and Fine MechanicsChinese Academy of Sciences201800 ShanghaiChina International Quantum Academy 518048 ShenzhenChina Hefei National Laboratory University of Science and Technology of ChinaHefei 230026China

Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication,sensing,and metrology *** technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible,such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high *** nitride has become the leading CMOS platform for integrated soliton devices,however,it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic *** materials have emerged such as AlN,LiNbO_(3),AlGaAs and GaP that exhibit simultaneous second-and third-order ***,we show that silicon carbide(SiC)--already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics,MOSFET,and MEMS due to its wide bandgap properties,excellent mechanical properties,piezoelectricity and chemical inertia--is a new competitive CMOS-compatible platform for nonlinear ***-quality-factor microresonators(Q=4×10^(6))are fabricated on 4H-SiC-on-insulator thin films,where a single soliton microcomb is *** addition,we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of *** work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.

关键词： soliton visible insulator