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Journal of Semiconductors 2017年第8期38卷 44-48页

作者： Chenglin Qi Yang Huang Teng Zhan Qinjin Wang xiaoyan yi Zhiqiang Liu Semiconductor Lighting Technology Research and Development Center Institute of SemiconductorsState Key Laboratory of Solid State LightingBeijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application Chinese Academy of Sciences

GaN-based vertical light-emitting-diodes （V-LEDs） with an improved current injection pattern were fabricated and a novel current injection pattern of LEDs which consists of electrode-insulator-semiconductor （E1S） structure was proposed. The EIS structure was achieved by an insulator layer （20-nm Ta2O5） deposited between the p-GaN and the ITO layer. This kind of EIS structure works through a defect-assisted tunneling mechanism to realize current injection and obtains a uniform current distribution on the chip surface, thus greatly improving the current spreading ability of LEDs. The appearance of this novel current injection pattern of V-LEDs will subvert the impression of the conventional LEDs structure, including simplifying the chip manufacture technology and reducing the chip cost. Under a current density of 2, 5, 10, and 25 A/cm2, the luminous uniformity was better than conventional structure LEDs. The standard deviation of power density distribution in light distribution was 0.028, which was much smaller than that of conventional structure LEDs and illustrated a huge advantage on the current spreading ability of EIS-LEDs.

关键词： electrode-insulator-semiconductor （EIS） light emitting diodes （LEDs） tunneling mechanism lumi-nous unifomaity current spreading

Phosphor-free single chip GaN-based white light emitting diodes with a moderate color rendering index and significantly enhanced communications bandwidth

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Photonics Research 2020年第7期8卷 1110-1117页

作者： Rongqiao Wan Xiang Gao Liancheng Wang Shuo Zhang Xiongbin Chen Zhiqiang Liu xiaoyan yi Junxi Wang Junhui Li Wenhui Zhu Jinmin Li State Key Laboratory of High Performance Complex Manufacturing College of Mechanical and Electrical EngineeringCentral South UniversityChangsha 410083China Semiconductor Lighting Technology Research and Development Center Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101408China State Key Laboratory of Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

To achieve high quality lighting and visible light communication(VLC)simultaneously,Ga N based white light emitting diodes(WLEDs)oriented for lighting in VLC has attracted great interest.However,the overall bandwidth of conventional phosphor converted WLEDs is limited by the long lifetime of phosphor,the slow Stokes transfer process,the resistance-capacitance(RC)time delay,and the quantum-confined Stark effect(QCSE).Here by adopting a self-assembled In Ga N quantum dots(QDs)structure,we have fabricated phosphor-free single chip WLEDs with tunable correlated color temperature(CCT,from 1600 K to 6000 K),a broadband spectrum,a moderate color rendering index(CRI)of 75,and a significantly improved modulation bandwidth(maximum of150 MHz)at a low current density of 72 A∕cm^2.The broadband spectrum and high modulation bandwidth are ascribed to the capture of carriers by different localized states of In Ga N QDs with alleviative QCSE as compared to the traditional In Ga N/Ga N quantum well(QW)structures.We believe the approach reported in this work will find its potential application in Ga N WLEDs and advance the development of semiconductor lighting-communication integration.

关键词： diodes rendering lighting

Performance improvement of light-emitting diodes with double superlattices confinement layer

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Journal of Semiconductors 2018年第11期39卷 47-50页

作者： Cheng Cheng Yan Lei Zhiqiang Liu Miao He Zhi Li xiaoyan yi Junxi Wang Jinmin Li Deping Xiong Center for Semiconductor Lighting Chinese Academy of Sciences Beijing 100083 China University of Chinese Academy of Sciences Beijing 100049 China School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou 510006 China

In this study, the effect of double superlattices on GaN-based blue light-emitting diodes(LEDs) is analyzed numerically. One of the superlattices is composed of InGaN/GaN, which is designed before the multiple quantum wells(MQWs). The other one is AlInGaN/AlGaN, which is inserted between the last QB(quantum barriers) and p-GaN. The crucial characteristics of double superlattices LEDs structure, including the energy band diagrams, carrier concentrations in the active region, light output power, internal quantum efficiency, respectively,were analyzed in detail. The simulation results suggest that compared with the conventional AlGaN electronblocking layer(EBL) LED, the LED with double superlattices has better performance due to the enhancement of electron confinement and the increase of hole injection. The double superlattices can make it easier for the carriers tunneling to the MQWs, especially for the holes. Furthermore, the LED with the double superlattices can effectively suppress the electron overflow out of multiple quantum wells simultaneously. From the result, we argue that output power is enhanced dramatically, and the efficiency droop is substantially mitigated when the double superlattices are used.

关键词： double superlattices LED GaN

Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer

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Journal of Semiconductors 2017年第11期38卷 26-30页

作者： Zejie Du Ruifei Duan Tongbo Wei Shuo Zhang Junxi Wang xiaoyan yi yiping Zeng Junxue Ran Jinmin Li Boyu Dong Semiconductor Lighting Technology Research and Development Center Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Institute of Semiconductors University of Chinese Academy of Sciences Beijing 100083 China PVD Division North Microelectronics Beijing 100176 China

High-quality AlN layers with low-density threading dislocations are indispensable for high-efficiency deep ultraviolet light-emitting diodes（UV-LEDs）. In this work, a high-temperature AlN epitaxial layer was grown on sputtered AlN layer（used as nucleation layer, SNL） by a high-yield industrial metalorganic vapor phase epitaxy（MOVPE）. The full width half maximum（FWHM） of the rocking curve shows that the AlN epitaxial layer with SNL has good crystal quality. Furthermore, the relationships between the thickness of SNL and the FWHM values of（002） and（102） peaks were also studied. Finally, utilizing an SNL to enhance the quality of the epitaxial layer, deep UV-LEDs at 282 nm were successfully realized on sapphire substrate by the high-yield industrial MOVPE. The light-output power（LOP） of a deep UV-LED reaches 1.65 mW at 20 mA with external quantum efficiency of 1.87%. In addition, the saturation LOP of the deep UV-LED is 4.31 mW at an injection current of 60 mA. Hence, our studies supply a possible process to grow commercial deep UV-LEDs in high throughput industrial MOVPE, which can increase yield, at lower cost.

关键词： metalorganic vapor phase epitaxy aluminum nitride deep UV-LED

Nanohole array structured GaN-based white LEDs with improved modulation bandwidth via plasmon resonance and non-radiative energy transfer

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Photonics Research 2021年第7期9卷 1213-1217页

作者： RONGQIAO WAN GUOQIANG LI XIANG GAO ZHIQIANG LIU JUNHUI LI xiaoyan yi NAN CHI LIANCHENG WANG State Key Laboratory of High Performance Complex Manufacturing College of Mechanical and Electrical EngineeringCentral South UniversityChangsha 410083China Department of Communication Science and Engineering Key Laboratory for Information Science of Electromagnetic Waves(MoE)Fudan UniversityShanghai 200433China Semiconductor Lighting Technology Research and Development Center Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101408China

Commercial white LEDs (WLEDs) are generally limited in modulation bandwidth due to a slow Stokes process,long lifetime of phosphors,and the quantum-confined Stark effect. Here we report what we believe is a novel plasmonic WLED by infiltrating a nanohole LED (H-LED) with quantum dots (QDs) and Ag nanoparticles(NPs) together (M-LED). This decreased distance between quantum wells and QDs would open an extra non-radiative energy transfer channel and thus enhance Stokes transfer efficiency. The presence of Ag NPs enhances the spontaneous emission rate significantly. Compared to an H-LED filled with QDs (QD-LED),the optimized M-LED demonstrates a maximum color rendering index of 91.2,a 43% increase in optical power at 60 m A,and a lowered correlated color temperature. Simultaneously,the M-LED exhibits a data rate of 2.21 Gb/s at low current density of 96 A∕cm2(60 m A),which is 77% higher than that of a QD-LED. This is mainly due to the higher optical power and modulation bandwidth of the M-LED under the influence of plasmon,resulting in a higher data rate and higher signal-to-noise ratio under the forward error correction.We believe the approach reported in this work should contribute to a WLED light source with increased modulation bandwidth for a higher speed visible light communication application.

关键词： transfer radiative white

Efficacy of exercise rehabilitation for managing patients with Alzheimer's disease

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Neural Regeneration Research 2024年第10期19卷 2175-2188页

作者： Dan Li Jinning Jia Haibo Zeng xiaoyan Zhong Hui Chen Chenju yi Department of Pathology The First Affiliated Hospital of Gannan Medical UniversityGanzhouJiangxi ProvinceChina Department of Pathology Huichang County People’s HospitalGanzhouJiangxi ProvinceChina School of Life Sciences Faculty of ScienceUniversity of Technology SydneyUltimoNSWAustralia Research Center The Seventh Affiliated Hospital of Sun Yat-sen UniversityShenzhenGuangdong ProvinceChina Shenzhen Key Laboratory of Chinese Medicine Active Substance Screening and Translational Research ShenzhenGuangdong ProvinceChina Guangdong Provincial Key Laboratory of Brain Function and Disease GuangzhouGuangdong ProvinceChina

Alzheimer's disease(AD) is a progressive and degenerative neurological disease characterized by the deterioration of cognitive functions. While a definitive cure and optimal medication to impede disease progression are currently unavailable, a plethora of studies have highlighted the potential advantages of exercise rehabilitation for managing this condition. Those studies show that exercise rehabilitation can enhance cognitive function and improve the quality of life for individuals affected by AD. Therefore, exercise rehabilitation has been regarded as one of the most important strategies for managing patients with AD. Herein, we provide a comprehensive analysis of the currently available findings on exercise rehabilitation in patients with AD, with a focus on the exercise types which have shown efficacy when implemented alone or combined with other treatment methods, as well as the potential mechanisms underlying these positive effects. Specifically, we explain how exercise may improve the brain microenvironment and neuronal plasticity. In conclusion, exercise is a cost-effective intervention to enhance cognitive performance and improve quality of life in patients with mild to moderate cognitive dysfunction. Therefore, it can potentially become both a physical activity and a tailored intervention. This review may aid the development of more effective and individualized treatment strategies to address the challenges imposed by this debilitating disease, especially in low-and middle-income countries.

关键词： Alzheimer's disease cerebrovascular function cognitive function epigenetic regulation exercise hippocampal neurogenesis mitochondria neuroinflammation neuronal plasticity

Black phosphorus quantum dots induce myocardial inflammatory responses and metabolic disorders in mice

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Journal of Environmental Sciences 2024年第3期137卷 53-64页

作者： Chao Shen xiaoyan Ding Jinpeng Ruan Fengkai Ruan Weiping Hu Jiyi Huang Chengyong He yi Yu Zhenghong Zuo Department of Nephrology State Key Laboratory of Cellular Stress BiologySchool of Life SciencesFaculty of Medicine and Life SciencesFujian Clinical Research Center for Chronic Glomerular DiseaseThe First Affiliated Hospital of Xiamen UniversitySchool of MedicineXiamen UniversityXiamen 361102China

As an ultrasmall derivative of black phosphorus(BP)sheets,BP quantum dots(BP-QDs)have been effectively used in many fields.Currently,information on the cardiotoxicity induced by BP-QDs remains limited.We aimed to evaluate BP-QD-induced cardiac toxicity in mice.Histopathological examination of heart tissue sections was performed.Transcriptome sequencing,real-time quantitative PCR(RT–qPCR),western blotting,and enzyme-linked immunosorbent assay(ELISA)assays were used to detect the m RNA and/or protein expression of proinfammatory cytokines,nuclear factor kappa B(NF-κB),phosphatidylinositol3 kinase-protein kinase B(PI3K-AKT),peroxisome proliferator-activated receptor gamma(PPARγ),and glucose/lipid metabolism pathway-related genes.We found that heart weight and heart/body weight index(HBI)were significantly reduced in mice after intragastric administration of 0.1 or 1 mg/kg BP-QDs for 28 days.In addition,obvious infammatory cell infiltration and increased cardiomyocyte diameter were observed in the BP-QD-treated groups.Altered expression of proinfammatory cytokines and genes related to the NF-κB signaling pathway further confirmed that BP-QD exposure induced infammatory responses.In addition,BP-QD treatment also affected the PI3K-AKT,PPARγ,thermogenesis,oxidative phosphorylation,and cardiac muscle contraction signaling pathways.The expression of genes related to glucose/lipid metabolism signaling pathways was dramatically affected by BP-QD exposure,and the effect was primarily mediated by the PPAR signaling pathway.Our study provides new insights into the toxicity of BP-QDs to human health.

关键词： BP-QDs Cardiac toxicity Infammatory responses NF-κB signaling pathway PPARγsignaling pathway Glucose/lipid metabolism

Understanding divergent domestication traits from the whole-genome sequencing of swamp-and river-buffalo populations

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National Science Review 2020年第3期7卷 686-701页

作者： Xier Luo Yu Zhou Bing Zhang yi Zhang Xiaobo Wang Tong Feng Zhipeng Li Kuiqing Cui Zhiqiang Wang Chan Luo Hui Li Yanfei Deng Fenghua Lu Jianlin Han Yongwang Miao Huaming Mao xiaoyan yi Cheng Ai Shigang Wu Alun Li Zhichao Wu Zijun Zhuo Do Da Giang Bikash Mitra Mohammad Farhad Vahidi Shahid Mansoor Sahar Ahmed Al-Bayatti Eka Meutia Sari Neena Amatya Gorkhali Sigit Prastowo Laiba Shafique Guoyou Ye Qian Qian Baoshan Chen Deshun Shi Jue Ruan Qingyou Liu Animal Biotechnology Department Agricultural Biotechnology Research Institute of Iran-North Region 11. National Institute for Biotechnology and Genetic Engineering 12. Animal Genetic Sources DepartmentDirectorate of Animal Resources Ministry of Agriculture 13. Department of Animal Science Faculty of Agriculture Syiah Kuala University 14. Animal Breeding DivisionNational Animal Science Research Institute Nepal Agriculture Research Council 15. Animal Science Department Universitas Sebelas Maret 16. International Rice Research Institute State Key Laboratory for Conservation and Utilization of Subtropical Agro-Bioresources Guangxi University CAS Key Laboratory of Genome Sciences and Information Beijing Institute of Genomics Chinese Academy of Sciences National Engineering Laboratory for Animal Breeding Key Laboratory of Animal Genetics Breeding and Reproduction of Ministry of Agriculture and Rural AffairsCollege of Animal Science and Technology China Agricultural University Guangdong Laboratory for Lingnan Modern Agriculture Genome Analysis Laboratory of the Ministry of Agriculture Agricultural Genomics Institute at Shenzhen Chinese Academy of Agricultural Sciences CAAS-ILRI Joint Laboratory on Livestock and Forage Genetic Resources Institute of Animal ScienceChinese Academy of Agricultural Sciences International Livestock Research Institute Faculty of Animal Science and Technology Yunnan Agricultural University Bacgiang Agriculture and Forestry University Cellular Immunology Lab Department of Zoology University of North Bengal

Domesticated buffaloes have been integral to rice-paddy agro-ecosystems for millennia, yet relatively little is known about the buffalo genomics. Here, we sequenced and assembled reference genomes for both swamp and river buffaloes and we re-sequenced 230 individuals(132 swamp buffaloes and 98 river buffaloes)sampled from across Asia and Europe. Beyond the many actionable insights that our study revealed about the domestication, basic physiology and breeding of buffalo, we made the striking discovery that the divergent domestication traits between swamp and river buffaloes can be explained with recent selections of genes on social behavior, digestion metabolism, strengths and milk production.

关键词： Bubalus bubalis genome buffalo domestication re-sequencing traits

LED Modulation Characteristics in a Visible-Light Communication System

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Optics and Photonics Journal 2013年第2期3卷 139-142页

作者： Yanrong Pei Shaoxin Zhu Hua Yang Lixia Zhao xiaoyan yi Junxi Junxi Wang Jinmin Li Institute of Semiconductors Chinese Academy of Sciences Beijing China

This paper conducts a research on modulation characteristics of blue light-emitting diodes (LEDs) used in a visible-light communication (VLC) system. Through analysis of the modulation characteristics of LEDs with different emitting sizes, we find that there is a similar linear relationship between LED’s 3dB bandwidth and the operation current density. This experiment also shows that high series resistance is one major issue that limits our LED's modulation speed. To further improve the LED bandwidth, the resistance can be reduced by optimizing device layout as well as reducing material bulk resistance. Clearly, this study provides an approach to increase the modulation bandwidth of GaN-based LEDs for VLC systems.

关键词： LED Visible-light Communication (VLC) Modulation Characteristics 3dB Bandwidth Current Density

Effects of light quality on growth rates and pigments of Chaetoceros gracilis(Bacillariophyceae)

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Journal of Oceanology and Limnology 2020年第3期38卷 795-801页

作者： LI Yongfu LI Ruiqian yi xiaoyan Key Laboratory of Experimental Marine Biology Institute of OceanologyCenter for Ocean Mega-ScienceChinese Academy of SciencesQingdao 266071China Laboratory for Marine Biology and Biotechnology Qingdao National Laboratory for Marine Science and TechnologyQingdao 266237China Nantong Research and Development Center of Marine Science and Technology Institute of OceanologyChinese Academy of SciencesNantong 226019China School of International Aff airs and Public Administration Ocean University of ChinaQingdao 266100China Xishuangbanna Tropical Botanical Garden Chinese Academy of SciencesMengla 666303China

Light is an important parameter in algal culturing.In this work,the effects of different light qualities on growth of the marine diatom Chaetoceros gracilis are evaluated.The cells were cultured under light quantum flux density of 60μmol photons/(m2·s)with nine light qualities:LED red light(LR),LED blue light(LB),LED red plus LED blue light(LR+LB),LED white light(LW),fluorescent white light(FW),and combinations of LW and FW lights with increased proportions of red or blue light(FW+LR,FW+LB,LW+LR,and LW+LB).Blue light promoted the growth of C.gracilis largely.Three light qualities,FW+LR,LW+LR,and LR,resulted in the lowest growth rate.Both chlorophyll and carotenoids reached the highest level under LB and the lowest level under LR among monochromatic light sources;however,increasing of the proportion of blue or red light in the white light induced an increase of the chlorophyll and carotenoid concentrations.Light absorption ability of microalgae was critical for the growth of these organisms,as we observed a positive correlation between the extinction coefficient at different wavelengths and the specific growth rate.These findings are of importance to improve the culturing of this alga in bioreactors.

关键词： Chaetoceros gracilis light quality pigments wavelength effect mean extinction coefficients