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Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate

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Science China(Information Sciences) 2024年第5期67卷 341-342页

作者： Wen HONG Chao ZHANG Fang ZHANG Xuefeng ZHENG xiaohua ma Yue HAO State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian University

With the development of integrated circuits, there is a growing demand for higher power devices [1]. Gallium oxide（Ga2O3） holds promise for high power devices due to its wide bandgap and high breakdown electric field strength [2].However, its low thermal conductivity induces severe selfheating effects, limiting its performance and reliability.Therefore, effective thermal management techniques are urgently needed for Ga2O3devices.

关键词： Gallium compounds

Realtime observation of “spring fracture” like AlGaN/GaN HEMT failure under bias

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Science China(Information Sciences) 2024年第1期67卷 303-305页

作者： Qing ZHU Zhenni WANG Yuxiang WEI Ling YANG Xiaoli LU Jiejie ZHU Peng ZHONG Yimin LEI xiaohua ma School of Microelectronics Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology Xidian University School of Advanced materials and Nanotechnology Xidian University

The AlGaN/GaN HEMTs have been considered promising candidates for high-frequency and high-power applications,while the reliability issues greatly limit the commercialization of AlGaN/GaN HEMTs. In the past, the research on the reliability of devices was often based on Raman spectroscopy, cathodoluminescence, and TEM after failure of the devices, which is often considered to be the laborious and complicated “archaeological” kind of analysis [1].

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Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

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Journal of Semiconductors 2024年第6期45卷 81-86页

作者： Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li Qimeng Jiang Xinhua Wang Bin Hou Ling Yang xiaohua ma Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of SciencesBe i-jing 100029China School of integrated Circuits University of Chinese Academy of SciencesBeijing 100049China Faculty of integrated Circuits Xidian UniversityXi’an 710071China

Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron g... 详细信息

Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(maxi-mum current/power gain cut-off frequency(fT/fmaX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.

关键词： AlGaN/GaN heterostructure ultrathin-barrier enhancement-mode radio-frequency power added efficiency silicon substrate

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness

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Science China(Information Sciences) 2024年第1期67卷 314-315页

作者： Sirui AN Minhan MI Pengfei WANG Sijia LIU Qing ZHU Meng ZHANG Zhihong CHEN Jielong LIU Siyin GUO Can GONG xiaohua ma Yue HAO School of Microelectronics Xidian University School of Advanced materials and Nanotechnology Xidian University Hubei Jiufengshan Laboratory

GaN-based HEMTs have significant advantages, making them a prime choice for high-frequency, high-power switching [1]. However, the inherent poor linearity of GaN HEMT has yet to be solved, which can be reflected by the nonlinearity of the transconductance (Gm) profile [2]. This makes it hard to achieve high data transmission efficiency and less signal distortion in the wireless communication system [3].

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Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure

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Science China(Information Sciences) 2024年第4期67卷 341-342页

作者： Chunzhou SHI Ling YANG Meng ZHANG Hao LU Mei WU Bin HOU Xuerui NIU Qian YU Wenliang LIU Wenze GAO xiaohua ma Yue HAO School of Advanced materials and Nanotechnology Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology Xidian University

GaN-based high-electric-mobility transistors(HEMTs) have been investigated thoroughly because of their promising applications in high-frequency,-voltage, and-power applications. However, the theoretical material limit prevents conventional single-heterostructure GaN HEMTs from achieving high performance despite numerous efforts [1–3].

关键词： Drain current

matrix-Mediated Color-Tunable Ultralong Organic Room Temperature Phosphorescence of 7H-Benzo[c]carbazole Derivatives

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CCS Chemistry 2024年第3期6卷 798-811页

作者： Chen Qian Xue Zhang Zhimin ma xiaohua Fu Zewei Li Huiwen Jin Mingxing Chen Hong Jiang Zhiyong ma Beijing Advanced Innovation Center for Soft matter Science and Engineering State Key Laboratory of Organic–Inorganic CompositesCollege of Chemical EngineeringBeijing University of Chemical TechnologyBeijing 100029 Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871

Building on the recent systematic research on 1Hbenzo[f]indole(Bd),an important advancement in constructing ultralong organic room temperature(UORTP)materials with a universal strategy via a readily obtained unit(7H-Benzo[c]carbazole,BCz)is proposed in this work.Pure powders of BCz and its derivatives merely exhibit blue fluorescence at ambient condition.However,when BCz and its derivatives are dispersed into polymer or powder matrixes,strong photo-activated green UORTP can be observed from their doped systems at room temperature.Moreover,the UORTP color can be tuned between green and yellow depending on the matrix.The ultralong phosphorescence originates from the generation of charge-separated states via radicals.The matrixes play a key role in both stabilizing charge-separated states and controlling UORTP color.More interestingly,when using polymethyl methacrylate as matrix,the doped films achieve stronger photo-activated ultralong phosphorescence underwater than in air at room temperature.Comparedwith Bd,BCz achieves better performance not only in ultralong phosphorescence properties but also in practical applications.This work gains a deeper insight into the mechanism of UORTP and paves a new approach to applying organic phosphorescent materials to underwater coating and imaging.

关键词： 7H-Benzo[c]carbazole ultralong organic room temperature phosphorescence ion radical matrix-mediated color tunning underwater application

Broadband high-performance microwave absorption of the single-layer Ti_(3)C_(2)T_(x)MXene

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Journal of materials Science & Technology 2022年第20期115卷 148-155页

作者： Xuejiao Zhou Junwu Wen Zhenni Wang xiaohua ma Hongjing Wu School of Advanced materials and Nanotechnology Xidian UniversityXi’an 710071China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Xidian UniversityXi’an 710071China MOE Key Laboratory of material Physics and Chemistry under Extraordinary School of Physical Science and TechnologyNorthwestern Polytechnical UniverstyXi’an 710072China

MXenes,a family of two-dimensional(2D)materials,exhibit peculiar microwave-absorbing behaviors due to their unique chemical composition and structure.Although laminated Ti_(3)C_(2)T_(x) MXenes with a multilayer structure have been used for microwave absorption,real 2D MXenes with a single-layer structure have not yet been investigated.Here,the electromagnetic wave response behavior of single-layer Ti_(3)C_(2)T_(x) MXenes was explored in detail.The permittivity of Ti_(3)C_(2)T_(x) MXene rises dramatically with an increase in filler loading,and Ti_(3)C_(2)T_(x) MXene features a distinct dielectric response wherein dipolar polarization and interfacial polarization makes a greater contribution at low filler loading;conductive loss becomes more prominent at high filler loading.Versus laminated Ti_(3)C_(2)T_(x) MXene,single-layer Ti_(3)C_(2)T_(x) MXene delivers superior absorbing capability:The RLminvalue of SL-Ti_(3)C_(2)T_(x)-22%reaches-43.5 d B at 6.5 GHz,and a broad EAB of 6.88 GHz can be attained at a thickness of 1.8 mm due to enhanced dipolar polarization,interfacial polarization,and conductive loss.This work is of great significance in guiding the future development of MXene-based absorbers.

关键词： Microwave absorption Ti_(3)C_(2)T_(x)MXene Single-layer Conductive loss

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从磁州窑看北方青花五彩工艺的形成与特点

中国陶瓷 2024年第1期60卷 75-80页

作者：马骁骅邯郸学院美术与设计学院邯郸056005

清末民国时期,磁州窑为了在激烈的市场竞争中生存下来,持续不断地开展了瓷业改良活动,在改良中以南方的景德镇窑和醴陵窑为主要学习目标,迅速抛弃了白地黑花的传统,先是在清末形成了青花“一枝独秀”的局面,民国十九年之后,复又形成了... 详细信息

清末民国时期,磁州窑为了在激烈的市场竞争中生存下来,持续不断地开展了瓷业改良活动,在改良中以南方的景德镇窑和醴陵窑为主要学习目标,迅速抛弃了白地黑花的传统,先是在清末形成了青花“一枝独秀”的局面,民国十九年之后,复又形成了五彩装饰的“满园春色”。同时,在磁州窑与北方多地窑口的相互交流中,逐渐形成了以磁州窑为代表的近代北方民间青花五彩瓷器的工艺特点。

关键词：磁州窑彭城窑北方青花青花五彩

Construction of mesoporous ceria-supported gold catalysts with rich oxygen vacancies for efficient CO oxidation

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Journal of Rare Earths 2022年第3期40卷 434-442,I0003页

作者： Xin Shen Wang Li Shunmin Ding xiaohua ma Shaohua Wu Weiming Xiao Rong Zeng Sanguo Hong Chao Chen Key Laboratory of Jiangxi Province for Environment and Energy Catalysis College of ChemistryNanchang UniversityNanchang 330031China Jiangxi Province Key Laboratory of Polymer Micro/Nano manufacturing and Devices School of ChemistryBiology and Materials ScienceEast China University of TechnologyNanchang 330013China

Bearing unique redox nature and high oxygen storage capacity,ceria(CeO_(2))has always been a promising CO oxidation catalyst support for gold(Au)catalysts and the like.Herein,a series of Au-CeO_(2)-P(P stands for pH value)samples was prepared by a co-precipitation method with the assistance of an alkaline environment and amino groups functionalized ordered mesoporous polymer(OMP-NH_(2)).Afterward,all samples described above were characterized that the Au-CeO_(2)-P catalysts are made of Au-Ce-O solid solution and Au nanoparticles(NPs)supported on CeO_(2).It turns out that OMP-NH_(2) is not just a simple sacrificial template for mesoporous structure,but also plays an important role as an amino source,explaining the presence of rich oxygen vacancies.Due to the concentration of oxygen vacancies in Au-Ce-O solid solution is the key factor for the oxygen mobility of CO oxidation,the catalytic results also demonstrate that the catalytic activity of Au-CeO_(2)-P catalysts is related to the concentration of their oxygen vacancies.Moreover,Au-CeO_(2)-9.6 with a highest concentration of oxygen vacancies(as high as 13.98%)in Au-CeO_(2)-P catalysts exhibits the best catalytic activity(complete conversion at 10℃).

关键词： Ceria Oxygen vacancies Au-Ce-O solid Solution Amino groups functionalized ordered mesoporous polymer CO oxidation Rare earths