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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Chinese Physics B 2024年第1期33卷 554-562页

作者：冯亚辉郭红霞刘益维欧阳晓平张晋新马武英张凤祁白如雪马晓华郝跃 State Key Laboratory of Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian UniversityXi'an 710071China School of materials Science and Engineering Xiangtan UniversityXiangtan 411105China School of Space Science and Technology Xidian UniversityXi'an 710071China State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation Northwest Institute of Nuclear TechnologyXi'an 710024China

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases ***, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

关键词： silicon–germanium heterojunction bipolar transistor(Si Ge HBT) 100-Me V proton technology computer-aided design(TCAD) single event effect(SEE)

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Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors

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Chinese Physics B 2021年第4期30卷 166-172页

作者： Hao Zou Lin-An Yang xiao-hua ma Yue Hao The State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

The effects of various notch structures on direct current(DC) and radio frequency(RF) performances of AlGaN/GaN high electron mobility transistors(HEMTs) are *** AlGaN/GaN HEMTs,each with a 0.8-μm gate length,50-μm gate width,and 3-μm source-drain distance in various notch structures at the AlGaN/GaN barrier layer,are manufactured to achieve the desired DC and RF *** maximum drain current(I_(ds,max)),pinch-off voltage(V_(th)),maximum transconductance(gm),gate voltage swing(GVS),subthreshold current,gate leakage current,pulsed I-V characteristics,breakdown voltage,cut-off frequency(f_(T)),and maximum oscillation frequency(f_(max)) are *** results show that the double-notch structure HEMT has a 30% improvement of gate voltage swing,a 42.2% improvement of breakdown voltage,and a 9% improvement of cut-off frequency compared with the conventional *** notch structure also has a good suppression of the current collapse.

关键词： AlGaN/GaN high electron mobility transistors(HEMTs) barrier layer notch

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Remarkably Improved Gas Separation Performance of Polyimides by Forming“Bent and Battered”main Chain Using Paracyclophane as Building Block

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高分子科学:英文版 2023年第10期41卷 1617-1628页

作者： Lu-Jun huang Ya-Tao Weng Aqib Raiz Zhi-Jie mao xiao-hua ma State Key Laboratory of Separation Membranes and Membrane Processes Tiangong UniversityTianjin300387China School of materials Science and Engineering Tiangong UniversityTianjin300387China Jiangxi Key Laboratory of Organic Chemistry Jiangxi Science&Technology Normal UniversityNanchang330013China

The design and development of highly permeable,selective and stable polymer membranes are great challenges in the gas separation ***,we constructed two intrinsic microporous polyimides(6FPCA and 6FMCA)derived from two isometric diamines(PCA and MCA),which were synthesized by palladium catalyzed C—N coupling *** PCA and MCA diamines contain a hollow beaded structure of 2,2′-paracyclophane as a building block with a specified window size of 3.09Å.The chemical structures of monomers,polyimides were confirmed by NMR,FTIR,and elementary analysis.6FPCA and 6FMCA exhibit good solubility,excellent thermal stability,and mechanical properties.6FPCA exhibits much larger microporosity(434 versus 120 m2·g−1),FFV(0.22 versus 0.15),d-spacing(6.9 versus 5.9Å),and over 10 times higher permeability with a very little decrease in selectivity than the corresponding polyimide(6FpA)with a plane structure,which remarkably increased their separation performance from far below the 2008 Robeson Upper bounds to reach these limitations for O2/N2 and CO2/***,the 6FPCA also demonstrates good plasticization resistance,moderate aging properties,and high CO2/CH4 mixed-gas separation *** results indicate that paracyclophane subunit can be successfully incorporated into polymers to enhance their ultra-microporosity and separation properties,which open a new avenue for developing high performance gas separation membranes with topological ultra-micropores.

关键词： Polyimide of intrinsic microporosity 2,2'-Paracyclophane Molecular intrinsic microporosity Gas separation Permeability/selectivity trade-off

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Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

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Chinese Physics B 2017年第1期26卷 433-437页

作者： Ling Yang xiao-Wei Zhou xiao-hua ma Ling Lv Yan-Rong Cao Jin-Cheng Zhang Yue Hao State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology Xidian University Xi＇an 710071 China School of Advanced materials and Nanotechnology Xidian University Xi＇an 710071 China School of Microelectronics Xidian University Xi＇an 710071 China School of Mechano-Electronic Engineering Xidian University Xi＇an 710071 China

The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor（HEMT） treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties.

关键词： AlGaN/GaN HEMT low plasma power fluorine implant ion early electrical reliability

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Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

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Chinese Physics B 2022年第6期31卷 712-716页

作者： Yun-Long He Fang Zhang Kai Liu Yue-hua Hong Xue-Feng Zheng Chong Wang xiao-hua ma Yue Hao Key Laboratory of Wide Band Gap Semiconductor materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China

A novel normally-off AlGaN/GaN high-electron-mobility transistor(HEMT)with a p-GaN Schottky hybrid gate(PSHG)is proposed,and compared with the conventional p-GaN normally-off AlGaN/GaN *** structure can be realized by selective etching of p-GaN layer,which enables the Schottky junction and PN junction to control the channel charge at the same *** direct current(DC)and switching characteristics of the PSHG HEMTs are simulated by Slivaco TCAD,and the p-GaN HEMTs and conventional normally-on HEMTs are also simulated for *** simulation results show that the PSHG HEMTs have a higher current density and a lower on-resistance than p-GaN HEMTs,which is more obvious with the decrease of p-GaN ratios of the PSHG *** breakdown voltage and threshold voltage of the PSHG HEMTs are very close to those of the p-GaN *** addition,the PSHG HEMTs have a higher switching speed than the conventional normally-on HEMTs,and the p-GaN layer ratio has no obvious effect on the switching speed.

关键词： normally-off high-electron-mobility transistor AlGaN/GaN p-GaN

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A coordinated operation method of wind-PV-hydrogenstorage multi-agent energy system

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Global Energy Interconnection 2024年第4期7卷 446-461页

作者： Tengfei ma Wei Pei Yanhong Yang Hao xiao Chenghong Tang Weiqi hua Institute of Electrical Engineering of Chinese Academy of Sciences Beijing 100190P.R.China State Grid Electric Power Research Institute Nanjing 211103P.R.China Department of Electronic Electrical and Systems EngineeringUniversity of BirminghamBirmingham B152TTUK

Wind-photovoltaic(PV)-hydrogen-storage multi-agent energy systems are expected to play an important role in promoting renewable power utilization and *** this study,a coordinated operation method was proposed for a wind-PVhydrogen-storage multi-agent energy ***,a coordinated operation model was formulated for each agent considering peer-to-peer power ***,a coordinated operation interactive framework for a multi-agent energy system was proposed based on the theory of the alternating direction method of ***,a distributed interactive algorithm was proposed to protect the privacy of each agent and solve coordinated operation ***,the effectiveness of the proposed coordinated operation method was tested on multi-agent energy systems with different structures,and the operational revenues of the wind power,PV,hydrogen,and energy storage agents of the proposed coordinated operation model were improved by approximately 59.19%,233.28%,16.75%,and 145.56%,respectively,compared with the independent operation model.

关键词： Wind-PV-hydrogen-storage Multi-agent energy system Renewable power to hydrogen Coordinated operation Peer-to-peer power trading

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Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications

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Chinese Physics B 2022年第5期31卷 738-742页

作者： Wen-Lu Yang Lin-An Yang Fei-Xiang Shen Hao Zou Yang Li xiao-hua ma Yue Hao State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China

A GaN-based high electron mobility transistor(HEMT)with p-GaN islands buried layer(PIBL)for terahertz applications is *** introduction of a p-GaN island redistributes the electric field in the gate–drain channel region,thereby promoting the formation of electronic domains in the two-dimensional electron gas(2DEG)*** formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD *** results show that the 0.2µm gate HEMT with a PIBL structure having a p-GaN island doping concentration(Np)of 2.5×10^(18)cm^(−3)–3×10^(18)cm^(−3)can generate stable oscillations up to 344 GHz–400 GHz under the gate–source voltage(V_(gs))of 0.6 *** the distance(D_(p))between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm,the fundamental frequency decreases from 377 GHz to 344 GHz,as well as the ratio of oscillation current amplitude of the fundamental component to the average component I_(f1)/I_(avg) ranging from 2.4%to 3.84%.

关键词： p-GaN island high electron mobility transistor(HEMT) AlGaN/GaN electron domain

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Ferroelectric effect and equivalent polarization charge model of PbZr_(0.2)Ti_(0.8)O_(3)on AlGaN/GaN MIS-HEMT

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Chinese Physics B 2021年第5期30卷 602-606页

作者： Yao-Peng Zhao Chong Wang Xue-Feng Zheng xiao-hua ma Ang Li Kai Liu Yun-Long He xiao-Li Lu Yue Hao Key Laboratory of Wide Band-Gap Semiconductor materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China

PbZr_(0.2)Ti_(0.8)O_(3)(PZT)gate insulator with the thickness of 30 nm is grown by pulsed laser deposition(PLD)in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors(MIS-HEMTs).The ferroelectric effect of PZT AlGaN/GaN MIS-HEMT is *** polarization charge in PZT varies with different gate *** equivalent polarization charge model(EPCM)is proposed for calculating the polarization charge and the concentration of two-dimensional electron gas(2DEG).The threshold voltage(V_(th))and output current density(I_(DS))can also be obtained by the *** theoretical values are in good agreement with the experimental results and the model can provide a guide for the design of the PZT *** polarization charges of PZT can be modulated by different gate-voltage stresses and the V_(th)has a regulation range of 4.0 *** polarization charge changes after the stress of gate voltage for several *** the gate voltage is stable or changes at high frequency,the output characteristics and the current collapse of the device remain stable.

关键词： PZT AlGaN/GaN MIS-HEMT equivalent polarization charge model(EPCM)

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Metamorphic P-T conditions and ages of garnet-biotite schists in the Dahongshan Group from the southwestern Yangtze Block

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Acta Geochimica 2024年第4期43卷 707-718页

作者： Jun-xiao ma Guang-shu Yang Yong-feng Yan xiao-Fei Xu Yun-hua Ren Hui Zhao xiao-jun Zheng Yuan Qin Faculty of Land Resources Engineering Kunming University of Science and TechnologyKunming 650093China Geological Team 306 of Yunnan Non-Ferrous Metals Geological Bureau Kunming 650217China Yunnan Provincial Bureau of Non-Ferrous Geology Kunming 650051China

The Dahongshan Group,situated at the southwestern margin of the Yangtze Block,represents a geological unit characterized by relatively high-grade metamorphism in the *** paper investigates the garnet-biotite schist from the Laochanghe Formation of the Dahongshan Group,employing an integrated approach that includes petrological analysis,phase equilibrium modeling,and zircon U-Pb *** schist is mainly composed of garnet,biotite,plagioclase,quartz,rutile,and *** equilibrium modeling revealed the peak metamorphic conditions of 8-9 kbar and 635-675°*** further integrating the prograde metamorphic profile of garnet and geothermobarometric results,a clockwise P-T metamorphic evolution path is constructed,which includes an increase in temperature and pressure during the prograde ***-ICP-MS zircon U-Pb dating and zircon Ti thermometry constrains the post-peak metamorphic age of 831.2±7.2 *** with previously reported results,it is revealed that the southwestern margin of the Yangtze Block experienced a large-scale regional metamorphism during the Neoproterozoic(890-750 ma),which is related to the collisional orogenic *** may be associated with the late-stage assembly of the Rodinia supercontinent or with local compression and subduction processes during the breakup of the Rodinia supercontinent.

关键词： Southwestern Yangtze Block Dahongshan Group Phase equilibrium modeling Zircon U-Pb dating Neoproterozoic metamorphism

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Trends and hotspots in gastrointestinal neoplasms risk assessment: A bibliometric analysis from 1984 to 2022

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World Journal of Gastrointestinal Oncology 2024年第6期16卷 2842-2861页

作者： Qiang-Qiang Fu Le ma xiao-Min Niu hua-Xin Zhao Xu-hua Ge hua Jin De-hua Yu Sen Yang Department of General Practice Yangpu HospitalSchool of MedicineTongji UniversityShanghai 200090China Shanghai General Practice and Community Health Development Research Center Shanghai 200090China Department of Shanghai Lung Cancer Center Shanghai Chest HospitalShanghai Jiao Tong University School of MedicineShanghai 200030China Department of Oncology Shanghai Tenth People’s HospitalTongji University School of MedicineShanghai 200090China

BACKGROUND Gastrointestinal neoplasm(GN)significantly impact the global cancer burden and mortality,necessitating early detection and *** the evolution and current state of research in this field is *** To conducts a comprehensive bibliometric analysis of publications from 1984 to 2022 to elucidate the trends and hotspots in the GN risk assessment research,focusing on key contributors,institutions,and thematic *** This study conducted a bibliometric analysis of data from the Web of Science Core Collection database using the"bibliometrix"R package,VOSviewer,and *** analysis focused on the distribution of publications,contributions by institutions and countries,and trends in *** methods included data synthesis,network analysis,and visualization of international collaboration *** This analysis of 1371 articles on GN risk assessment revealed a notable evolution in terms of research focus and *** highlights the United States'critical role in advancing this field,with significant contributions from institutions such as Brigham and Women's Hospital and the National Cancer *** last five years,substantial advancements have been made,representing nearly 45%of the examined *** rates have dramatically increased,from 20 articles in 2002 to 112 in 2022,reflecting intensified research *** study underscores a growing trend toward interdisciplinary and international collaboration,with the Journal of Clinical Oncology standing out as a key publication *** shift toward more comprehensive and collaborative research methods marks a significant step in addressing GN *** This study underscores advancements in GN risk assessment through genetic analyses and machine learning and reveals significant geographical disparities in research *** calls for enhanced global collaboration and integration of artificial intelligence to improve cancer p

关键词： Gastrointestinal neoplasms Bibliometric analysis Risk assessment Network analysis Research trends

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