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Transient breathing dynamics during extinction of dissipative solitons in mode‑locked fiber lasers

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Frontiers of Optoelectronics 2024年第1期17卷 9-19页

作者： Zichuan Yuan Si Luo Ke Dai xiankun Yao Chenning Tao Qiang Ling Yusheng zhang Zuguang Guan Daru Chen Yudong Cui Hangzhou Institute of Advanced Studies Zhejiang Normal UniversityHangzhou 311231China State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringZhejiang UniversityHangzhou 310027China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China Key Laboratory of Optical Information Detection and Display Technology of Zhejiang Zhejiang Normal UniversityJinhua 321004China School of Physics Northwest UniversityXi’an 710127China

The utilization of the dispersive Fourier transformation approach has enabled comprehensive observation of the birth process of dissipative solitons in fiber lasers.However,there is still a dearth of deep understanding regarding the extinction process of dissipative solitons.In this study,we have utilized a combination of experimental and numerical techniques to thoroughly examine the breathing dynamics of dissipative solitons during the extinction process in an Er-doped mode-locked fiber laser.The results demonstrate that the transient breathing dynamics have a substantial impact on the extinction stage of both steady-state and breathing-state dissipative solitons.The duration of transient breathing exhibits a high degree of sensitivity to variations in pump power.Numerical simulations are utilized to produce analogous breathing dynamics within the framework of a model that integrates equations characterizing the population inversion in a mode-locked laser.These results corroborate the role of Q-switching instability in the onset of breathing oscillations.Furthermore,these findings offer new possibilities for the advancement of various operational frameworks for ultrafast lasers.

关键词： Breathing soliton Fiber laser Dispersive Fourier transform Q-switched instability

Flexible electronics and optoelectronics of 2D van der Waals materials

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International Journal of Minerals,Metallurgy and Materials 2022年第4期29卷 671-690页

作者： Huihui Yu Zhihong Cao Zheng zhang xiankun zhang Yue zhang Academy for Advanced Interdisciplinary Science and Technology School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Advanced Energy Materials and TechnologiesUniversity of Science and Technology BeijingBeijing 100083China

Flexible electronics and optoelectronics exhibit inevitable trends in next-generation intelligent industries,including healthcare and wellness,electronic skins,the automotive industry,and foldable or rollable displays.Traditional bulk-material-based flexible devices considerably rely on lattice-matched crystal structures and are usually plagued by unavoidable chemical disorders at the interface.Two-dimensional van der Waals materials(2D VdWMs)have exceptional multifunctional properties,including large specific area,dangling-bond-free interface,plane-to-plane van der Waals interactions,and excellent mechanical,electrical,and optical properties.Thus,2D VdWMs have considerable application potential in functional intelligent flexible devices.To utilize the unique properties of 2D VdWMs and their van der Waals heterostructures,new designs and configurations of electronics and optoelectronics have emerged.However,these new designs and configurations do not consider lattice mismatch and process incompatibility issues.In this review,we summarized the recently reported 2D VdWM-based flexible electronic and optoelectronic devices with various functions thoroughly.Moreover,we identified the challenges and opportunities for further applications of 2D VdWM-based flexible electronics and optoelectronics.

关键词： two-dimensional van der Waals material two-dimensional van der Waals heterostructure flexible electronics flexible optoelectronics

Dual-wavelength pumped latticed Fermi-Pasta-Ulam recurrences in nonlinear Schrödinger equation

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Chinese Physics B 2024年第3期33卷 277-280页

作者：张倩姚献坤董恒 School of Physics Northwest UniversityXi'an 710127China Shaanxi Key Laboratory for Theoretical Physics Frontiers Xi'an 710127China Peng Huanwu Center for Fundamental Theory Xi'an 710127China

We show that the nonlinear stage of the dual-wavelength pumped modulation instability(MI)in nonlinear Schrödinger equation(NLSE)can be effectively analyzed by mode truncation methods.The resulting complicated heteroclinic structure of instability unveils all possible dynamic trajectories of nonlinear waves.Significantly,the latticed-Fermi-Pasta-Ulam recurrences on the modulated-wave background in NLSE are also investigated and their dynamic trajectories run along the Hamiltonian contours of the heteroclinic structure.It is demonstrated that there has much richer dynamic behavior,in contrast to the nonlinear waves reported before.This novel nonlinear wave promises to inject new vitality into the study of MI.

关键词： modulation instability dual-wavelength pumps latticed-Fermi-Pasta-Ulam recurrences

Silicon-processes-compatible contact engineering for twodimensional materials integrated circuits

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Nano Research 2023年第11期16卷 12471-12490页

作者： Li Gao zhangyi Chen Chao Chen xiankun zhang Zheng zhang Yue zhang Academy for Advanced Interdisciplinary Science and Technology Beijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing 100083China School of Materials Science and Engineering Peking UniversityBeijing 100871China Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of EducationUniversity of Science and Technology BeijingBeijing 100083China

Two-dimensional(2D)semiconductors,especially transition metal dichalcogenides(TMDCs),have been proven to be excellent channel materials for the next-generation integrated circuit(IC).However,the contact problem between 2D TMDCs and metal electrodes has always been one of the main factors restricting their development.In this review,we summarized recent work on 2D TMDCs contact from the perspective of compatible integration with silicon processes and practical application requirements,including the contact performance evaluation indicators,special challenges encountered in 2D TMDCs,and recent optimization methods.Specifically,we sorted out and highlighted the performance indicators of 2D TMDCs contacts,including contact resistance(RC),contact scaling,contact stability,and contact electrical/thermal conductivity.Special challenges of 2D TMDCs and metal contact,such as severe Fermi level pinning,large RC,and difficult doping,are systematically discussed.Furthermore,typical methods for optimizing 2D TMDCs RC,edge contact strategies for scaling contact lengths,and solutions for improving contact stability are reviewed.Based on the current research and problems,the development direction of 2D TMDCs contacts that meet the silicon-based compatible process and application performance requirements is proposed.

关键词： two-dimensional(2D)semiconductors transition metal dichalcogenides field effect transistors contact engineering

Record-high saturation current in end-bond contacted monolayer MoS_(2) transistors

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Nano Research 2022年第1期15卷 475-481页

作者： Jiankun Xiao Zhuo Kang Baishan Liu xiankun zhang Junli Du Kuanglei Chen Huihui Yu Qingliang Liao Zheng zhang Yue zhang Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Advanced Energy Materials and TechnologiesUniversity of Science and Technology BeijingBeijing 100083China State Key Laboratory for Advanced Metals and Materials School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China

Monolayer two-dimensional(2D)semiconductors are emerging as top candidates for the channels of the future chip industry due to their atomically thin body and superior immunity to short channel effect.However,the low saturation current caused by the high contact resistance(R_(c))in monolayer MoS2 field-effect transistors(FETs)limits ultimate electrical performance at scaled contact lengths,which seriously hinders application of monolayer MoS_(2 )transistors.Here we present a scalable strategy with a clean end-bond contact scheme that leads to size-independent electrodes and ultralow contact resistance of 2.5 kΩ·μm to achieve record high performances of saturation current density of 730μA·μm^(-1)at 300 K and 960μA·μm^(-1)at 6 K.Our end-bond contact strategy in monolayer MoS2 FETs enables the great potential for atomically thin integrated circuitry.

关键词： monolayer MoS_(2)transistors end-bond contact low contact resistance high saturation current short channel

与硅基技术兼容的二维过渡金属硫族化合物电子器件

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科学通报 2024年第14期69卷 1906-1922页

作者：耿宇陈超陈匡磊张先坤张铮张跃北京科技大学前沿交叉科学技术研究院北京100083 后摩尔时代芯片关键新材料与器件教育部重点实验室北京100083 新能源材料与技术北京市重点实验室北京100083 北京材料基因工程高精尖创新中心北京100083 新金属材料国家重点实验室北京100083 北京科技大学材料科学与工程学院北京100083

作为现代信息社会的物理基石,以硅基材料为核心的集成电路极大推动了人类现代文明的进程.但是,随着晶体管特征尺寸微缩逐渐接近物理极限,传统硅基材料出现了电学性能衰退、异质界面失稳等挑战,导致集成电路数据处理能力提升难、功耗急... 详细信息

作为现代信息社会的物理基石,以硅基材料为核心的集成电路极大推动了人类现代文明的进程.但是,随着晶体管特征尺寸微缩逐渐接近物理极限,传统硅基材料出现了电学性能衰退、异质界面失稳等挑战,导致集成电路数据处理能力提升难、功耗急剧增加等问题产生.超薄二维过渡金属硫族化合物(transition metal dichalcogenides,TMDCs)具有表面平整无悬挂键、电输运性能优异、静电控制力强、化学性质稳定等优势,可有效解决上述问题,被认为是后摩尔时代集成电路的最具潜力候选材料之一.目前,二维TMDCs集成电路研究在多个关键领域均取得了突破性成果,但距离产业化应用仍需要克服一些挑战.本文着重介绍了二维TMDCs材料与电子器件在集成电路应用的各方面优势,系统阐明了二维TMDCs集成电路在材料控制生长、范德华界面优化以及器件设计构筑等方面的关键科学问题,提出了相应解决办法和应对措施,分析了二维TMDCs集成电路产业化进程中的综合性挑战,明确了“与硅基技术兼容”二维TMDCs集成电路发展路线的优势、可行性与突破方向.

关键词：集成电路二维过渡金属硫族化合物电子器件与硅基技术兼容

不同鞋底厚度的运动鞋对高中生步态参数和爆发力的影响

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应用力学学报 2024年第3期41卷 719-728页

作者：常先坤张建新上海工程技术大学体育教学部上海201620

目的对比受试者在平地常速行走过程中,不同鞋底厚度的运动鞋对高中生的步态参数产生的影响,受试者穿着不同鞋底厚度的运动鞋进行训练,探究鞋底厚度对高中生下肢爆发力的影响。方法以24名在校的男性高中生为研究对象,随机分成4组,穿着... 详细信息

目的对比受试者在平地常速行走过程中,不同鞋底厚度的运动鞋对高中生的步态参数产生的影响,受试者穿着不同鞋底厚度的运动鞋进行训练,探究鞋底厚度对高中生下肢爆发力的影响。方法以24名在校的男性高中生为研究对象,随机分成4组,穿着鞋底厚度为0、1、2、3 cm的运动鞋在平地上行走并测试步态参数,穿着上述4种不同鞋底厚度的运动鞋经过为期8周的体育专项课训练后测试立定跳远和下蹲跳的动力学指标,并对步态参数和下蹲跳的动力学指标采用单因素方差分析进行统计分析。结果运动鞋鞋底厚度在1~3 cm区内受试者的步态周期更大,步长、步周长、步速和步频均小于穿着鞋底厚度0 cm的运动鞋的受试者,鞋底厚度0 cm组的步速和步频均最快分别为(1.42±0.08) m/s、(1.75±0.03) m, 3 cm鞋底的运动鞋的步速和步频均最慢分别为(1.13±0.02) m/s、(1.49±0.04) m,过8周训练后,穿3 cm厚度的运动鞋实验后对立定跳远成绩的增幅达到0.14 m,增幅最大,下蹲跳的动力学指标的提升效果显著高于鞋底厚度0 cm组。结论运动员穿着平底运动鞋在平地行走时更为稳定,能够降低运动中的风险,穿着厚底运动鞋在训练过程中激活了更多的肌肉纤维,对提升运动员下肢爆发力的效果更为显著,穿着鞋底厚度0 cm的运动鞋对运动员的提升效果无明显优势。

关键词：鞋底厚度运动能力运动学立定跳远下蹲跳爆发力

Two-dimensional transition metal dichalcogenides for post-silicon electronics

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National Science Open 2023年第4期2卷 103-120页

作者： xiankun zhang Hang Zhao Xiaofu Wei Yanzhe zhang Zheng zhang Yue zhang Academy for Advanced Interdisciplinary Science and Technology Beijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing 100083China Beijing Key Laboratory for Advanced Energy Materials and Technologies School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China

Rapid advancements in information technology push the explosive growth in data volume,requiring greater computing-capability logic circuits.However,conventional computing-capability improving technology,which mainly relies on increasing transistor number,encounters a significant challenge due to the weak field-effect characteristics of bulk siliconbased semiconductors.Still,the ultra-thin layered bodies of two-dimensional transition metal dichalcogenides(2D-TMDCs)materials enable excellent field-effect characteristics and multiple gate control ports,facilitating the integration of the functions of multiple transistors into one.Generally,the computing-capability improvement of the transistor cell in logic circuits will greatly alleviate the challenge in transistor numbers.In other words,one can only use a small number,or even just one,2DTMDCs-based transistors to conduct the sophisticated logic operations that have to be realized by using many traditional transistors.In this review,from material selection,device structure optimization,and circuit architecture design,we discuss the developments,challenges,and prospects for 2D-TMDCs-based logic circuits.

关键词： logic circuits two-dimensional transition metal dichalcogenides computing capability post-silicon electronics transistor number

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工业废盐中有机物脱除工艺

有色金属（冶炼部分） 2024年第4期 147-152页

作者：邓雅清曾宪坤张胜露中国瑞林工程技术股份有限公司南昌330031

随着我国经济的快速发展,化工、制药、农药、染料等行业在取得长足进步的同时,副产工业废盐产生量逐年递增,不仅对生态环境造成严重影响,而且也加重了很多企业负担。工业废盐既是一种危险废物,更是一种可利用的资源。工业废盐的资源化... 详细信息

随着我国经济的快速发展,化工、制药、农药、染料等行业在取得长足进步的同时,副产工业废盐产生量逐年递增,不仅对生态环境造成严重影响,而且也加重了很多企业负担。工业废盐既是一种危险废物,更是一种可利用的资源。工业废盐的资源化对实现行业可持续发展具有重要的意义,而工业废盐中有机物的脱除是实现其资源化目标的关键。在总结国内工业废盐中有机物脱除工艺研究的基础上,针对目前废盐中有机物脱除工艺存在的能耗高、有机物脱除不彻底等问题,提出了一种基于蓄热式熔融炉处理废盐的工艺。

关键词：工业废盐资源化有机物脱除蓄热式熔融炉