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Comparison study of GaN films grown on porous and planar GaN templates

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Chinese Physics B 2020年第3期29卷 433-435页

作者： Shan Ding Yue-Wen Li xiang-qian xiu Xue-Mei Hua Zi-Li Xie Tao Tao Peng Chen Bin Liu Rong Zhang You-Dou Zheng Key Laboratory of Advanced Photonic&Electronic Materials School of Electronic Science&EngineeringNanjing UniversityNanjing 210093China

The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition(MOCVD)-GaN template by halide vapor phase epitaxy(HVPE). The analysis results indicated that the GaN films grown on porous and planar GaN templates under the same growth conditions have similar structural, optical, and electrical properties. But the porous GaN templates could significantly reduce the stress in the HVPE-GaN epilayer and enhance the photoluminescence(PL) intensity. The voids in the porous template were critical for the strain relaxation in the GaN films and the increase of the PL intensity. Thus, the porous GaN converted from β-Ga2O3 film as a novel promising template is suitable for the growth of stress-free GaN films.

关键词： GaN porous template stress

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

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Chinese Physics B 2017年第1期26卷 488-492页

作者： Feng Xu Peng Chen Fu-Long Jiang Ya-Yun Liu Zi-Li Xie xiang-qian xiu Xue-Mei Hua Yi Shi Rong Zhang You-Liao Zheng Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing 210093 China Nanjing University Institute of Optoelectronics at Yangzhou Yangzhou 225009 China

A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells（MQWs） is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence（PL） properties of the InGaN/AlInGa N MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs（76.1%） is much higher than that of InGaN/GaN MQWs（21%）.The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.

关键词： AlInGaN superlattices MQWs photoluminescence x-ray diffraction spectrum

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate

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Chinese Physics Letters 2019年第8期36卷 94-97页

作者： Qi Wang Jun-Chi Yu Tao Tao Bin Liu Ting Zhi Xu Cen Zi-Li Xie xiang-qian xiu Yu-Gang Zhou You-Dou Zheng Rong Zhang Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing UniversityNanjing210093 Nanjing National Laboratory of Microstructures Nanjing UniversityNanjing210093 College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts andTelecommunicationsNanjing210093

GaN-based micro light emitting diodes(micro-LEDs) on silicon(Si)substrates with 40μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching *** currentvoltage curves,the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10-8 A/cm2 indicate good electrical *** the injection current increases,the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays,because the impact of quantum-confined Stark effect is not serious in violet-blue *** GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures,the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.

关键词： Fabrication Characterization Silicon

Synthesis and characterization of β-Ga_2O_3@GaN nanowires

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Chinese Physics B 2019年第2期28卷 445-448页

作者： Shuang Wang Yue-Wen Li xiang-qian xiu Li-Ying Zhang Xue-Mei Hua Zi-Li Xie Tao Tao Bin Liu Peng Chen Rong Zhang You-Dou Zheng Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing University

In this work, we prepared the β-Ga_2O_3@GaN nanowires(NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from GaN to β-Ga_2O_3 was confirmed by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effect of the oxidation temperature and time on the oxidation degree of GaN NWs was investigated systematically. The oxidation rate of GaN NWs was estimated at different temperatures.

关键词： β-Ga2O3@GaN nanowires thermal oxidation

Study on the nitridation of β-Ga2O3 films

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Chinese Physics B 2019年第8期28卷 382-386页

作者： Fei Cheng Yue-Wen Li Hong Zhao xiang-qian xiu Zhi-Tai Jia Duo Liu Xue-Mei Hua Zi-Li Xie Tao Tao Peng Chen Bin Liu Rong Zhang You-Dou Zheng Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100China

Single-crystal GaN layers have been obtained by nitridingβ-Ga2O3 films in NH3 *** effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been *** nitridation process results in lots of holes in the surface of *** higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN *** converted Ga N porous films show the single-crystal structures and lowstress,which can be used as templates for the epitaxial growth of high-quality GaN.

关键词： β-Ga2O3 nitridation GaN single-crystal

Approach to Single-Mode Dominated Resonant Emission in Ga N-Based Square Microdisks on Si

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Chinese Physics Letters 2020年第5期37卷 59-63页

作者： Meng-Han Liu Peng Chen Zi-Li Xie xiang-qian xiu Dun-Jun Chen Bin Liu Ping Han Yi Shi Rong Zhang You-Dou Zheng Kai Cheng Li-Yang Zhang Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering Nanjing UniversityNanjing 210093 Enkris Semiconductor Inc.NW-20 Nanopolis SuzhouSuzhou 215123

Square microdisks with round corners are fabricated using a standard GaN-based blue LED on Si *** gallery-like inodes in the square microdisks are investigated by finite-difference time-domain *** simulation results reveal that the round corners in square microdisks can substantially suppress the number of light propagation paths and further reduce the number of optical modes.A con focal microphotoluminescence is performed to analyze the optical properties of the square microdisks at room *** single-mode dominant resonant emission is obtained in the square microdisk with corner radius of 1.5μm.

关键词： temperature. optical corners

Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

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Chinese Physics B 2020年第5期29卷 525-529页

作者： Qing-Jun Xu Shi-Ying Zhang Bin Liu Zhen-Hua Li Tao Tao Zi-Li Xie xiang-qian xiu Dun-Jun Chen Peng Chen Ping Han Ke Wang Rong Zhang You-Liao Zheng Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China College of Optoelectronics Engineering Zaozhuang UniversityZaozhuang 277160China

The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concentration(~ 1020 cm-3) grown by metal–organic chemical vapor deposition(MOCVD) are systematically studied through optical and electrical properties. Emission lines of shallow oxygen donors and(VⅢ complex)1- as well as VN3+ and neutral Mg acceptors are observed, which indicate that self-compensation is occurred in Mg-doped AlGaN at highly doping levels. The fitting of the temperature-dependent Hall effect data shows that the acceptor activation energy values in Mgdoped AlxGa1-xN(x = 0.23, 0.35) are 172 meV and 242 meV, and the hole concentrations at room temperature are 1.2×1018 cm-3 and 3.3× 1017 cm-3, respectively. Therefore, it is believed that there exists the combined effect of the Coulomb potentials of the dopants and screening of the Coulomb potentials by a high hole concentration. Moreover, due to the high ionized acceptors’ concentration and compensation ratio, the impurity conduction becomes more prominent and the valence band mobility drops sharply at low temperature.

关键词： AlGaN Mg doping MOCVD cathodo-luminescence Hall measurement

AZD1775 synergizes with SLC7A11 inhibition to promote ferroptosis

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Science China Life Sciences 2025年第1期 204-218页

作者： Chen Xiong Hong Ling Yingdan Huang Hanzhi Dong Bangxiang Xie qian Hao xiang Zhou Fudan University Shanghai Cancer Center and Institutes of Biomedical Sciences Fudan University Department of Oncology Shanghai Medical CollegeFudan University Department of Breast Surgery Fudan University Shanghai Cancer CenterFudan University Department of Oncology First Affiliated Hospital of Nanchang University Beijing Institute of Hepatology Beijing Youan HospitalCapital Medical University Beijing Engineering Research Center for Precision Medicine and Transformation of Hepatitis and Liver Cancer Key Laboratory of Breast Cancer in Shanghai Fudan University Shanghai Cancer CenterFudan University Shanghai Key Laboratory of Medical Epigenetics International Co-laboratory of Medical Epigenetics and Metabolism (Ministry of Science and Technology)Institutes of Biomedical SciencesFudan University

Tumor suppressor p53-mediated cell cycle arrest and DNA damage repair may exert cytoprotective effects against cancer therapies, including WEE1 inhibition. Considering that p53 activation can also lead to multiple types of cell death, the role of this tumor suppressor in WEE1 inhibitor-based therapies remains disputed. In this study, we reported that nucleolar stress-mediated p53 activation enhanced the WEE1 inhibitor AZD1775-induced ferroptosis to suppress lung cancer growth. Our findings showed that AZD1775 promoted ferroptosis by blocking cystine uptake, an action similar to that of Erastin. Meanwhile, inhibition of WEE1 by the WEE1 inhibitors or si RNAs induced compensatory upregulation of SLC7A11, which conferred resistance to ferroptosis. Mechanistically, AZD1775 prevented the enrichment of H3K9me3, a histone marker of transcriptional repression, on the SLC7A11 promoter by repressing the expression of the histone methyltransferase SETDB1, thereby enhancing NRF2-mediated SLC7A11 transcription. This finding was also validated using the H3K9me3 inhibitor BRD4770. Remarkably, we found that the nucleolar stress-inducing agent Actinomycin D(Act. D) inhibited SLC7A11 expression by activating p53, thus augmenting AZD1775-induced ferroptosis. Moreover, the combination of AZD1775 and Act. D synergistically suppressed wild-type p53-harboring lung cancer cell growth both in vitro and in vivo. Altogether, our study demonstrates that AZD1775 promotes ferroptosis by targeting cystine uptake but also mediates the adaptive activation of SLC7A11 through the WEE1-SETDB1 cascade and NRF2-induced transcription, and inhibition of SLC7A11 by Act. D boosts the anti-tumor efficacy of AZD1775 by enhancing ferroptosis in cancers with wild-type p53.

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Direct Photolithography of WO_x Nanoparticles for High-Resolution Non-Emissive Displays

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NANO-MICRO LETTERS 2025年第1期17卷 1-13页

作者： Gu, Chang Yang, Guojian Wang, Wenxuan Shi, Aiyan Fang, Wenjuan qian, Lei Hu, Xiaofei Zhang, Ting xiang, Chaoyu Zhang, Yu-Mo Chinese Acad Sci Ningbo Inst Mat Technol & Engn Lab Optoelect Informat Technol & Devices Ningbo 315201 Peoples R China qianwan Inst CNITECH Hangzhou Bay Lab Adv Nanooptoelectron Mat & Device Ningbo 315336 Peoples R China Zhejiang Univ Innovat Ctr Yangtze River Delta Smart Mat Architecture Res Lab Jiaxing 314100 Peoples R China Univ Sci & Technol China Hefei 230026 Peoples R China Jilin Univ Coll Chem State Key Lab Supramol Struct & Mat Changchun 130012 Peoples R China

High-resolution non-emissive displays based on electrochromic tungsten oxides (WOx) are crucial for future near-eye virtual/augmented reality interactions, given their impressive attributes such as high environmental stability, ideal outdoor readability, and low energy consumption. However, the limited intrinsic structure of inorganic materials has presented a significant challenge in achieving precise patterning/pixelation at the micron scale. Here, we successfully developed the direct photolithography for WOx nanoparticles based on in situ photo-induced ligand exchange. This strategy enabled us to achieve ultra-high resolution efficiently (line width m, the best resolution for reported inorganic electrochromic materials). Additionally, the resulting device exhibited impressive electrochromic performance, such as fast response ( 3600 cycles), as well as promising applications in electronic logos, pixelated displays, flexible electronics, etc. The success and advancements presented here are expected to inspire and accelerate research and development (R&D) in high-resolution non-emissive displays and other ultra-fine micro-electronics.

关键词： Electrochromic Direct photolithography WOx nanoparticles In situ photo-induced ligand exchange High-resolution displays