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Single-crystalline hole-transporting layers for efficient and stable organic light-emitting devices

light(Science & Applications) 2024年第7期13卷 1341-1353页

作者： Gao-Da Ye Ran Ding Su-Heng li Lei Ni Shu-Ting Dai Nian-Ke Chen Yue-Feng liu Runda Guo Lei Wang xian-bin li bin Xu Jing Feng State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin University2699 Qianjin Street130012 ChangchunChina. State Key Laboratory of Supermolecular Structures and Materials The Institute of Theoretical ChemistryJilin University2699 Qianjin Street130012 ChangchunChina. Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology430074 WuhanChina

Efficient charge-carrier injection and transport in organic light-emitting devices(OLEDs)are essential to simultaneously achieving their high efficiency and long-term ***,the charge-transporting layers(CTLs)deposited by various vapor or solution processes are usually in amorphous forms,and their low charge-carrier mobilities,defectinduced high trap densities and inhomogeneous thickness with rough surface morphologies have been obstacles towards high-performance ***,organic single-crystalline(SC)films were employed as the hole-transporting layers(HTLs)instead of the conventional amorphous films to fabricate highly efficient and stable *** highmobility and ultrasmooth morphology of the SC-HTLs facilitate superior interfacial characteristics of both HTL/electrode and HTL/emissive layer interfaces,resulting in a high Haacke’s figure of merit(FoM)of the ultrathin top electrode and low series-resistance joule-heat loss ratio of the ***,the thick and compact SC-HTL can function as a barrier layer against moisture and oxygen *** a result,the SC-OLEDs show much improved efficiency and stability compared to the OLEDs based on amorphous or polycrystalline HTLs,suggesting a new strategy to developing advanced OLEDs with high efficiency and high stability.

关键词： crystalline amorphous charge

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Ultrafast laser-induced decomposition for selective activation of GaAs

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light(Advanced Manufacturing) 2024年第2期5卷 87-94页

作者： Ke-Mi Xu Chao liu Lei Wang Feng-Chun Pang Xin-Jing Zhao xian-bin li Qi-Dai Chen Wei-Qian Zhao MIIT Key Laboratory of Complex-field Intelligent Exploration School of Optics and PhotonicsBeijing Institute of TechnologyBeijing100081China State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin University2699 Qianjin StreetChangchun 130012China

The manipulation of micro/nanostructures to customise their inherent material characteristics has garnered considerable *** this study,we present the selective activation of gallium arsenide(GaAs)via ultrafast laser-induced decomposition,which correlates with the emergence of ripples on the *** instigated a pronounced enrichment in the arsenic(As)concentration around the surface while inducing a depletion of gallium(Ga)at the structural *** simulations based on first principles exhibited a robust inclination towards the phase separation of GaAs,with the gasification of As-As pairs proving more facile than that of Ga-Ga pairs,particularly above the melting point of *** an illustrative application,a metal-semiconductor hybrid surface was confirmed,showing surface chemical bonding and surface-enhanced Raman scattering(SERS)through the reduction of silver ions on the laser-activated *** laser-induced selective activation holds promise for broader applications,including the controlled growth of Pd and the development of Au/Ag alloy-based platforms,and thereby opens innovative avenues for advancements in semiconductors,solar cell technologies,precision sensing,and detection methodologies.

关键词： Laser-induced activation Decomposition Laser-induced ripples Reduction SERS

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Interaction between catechol-O-methyltransferase Val/Met polymorphism and cognitive reserve for negative symptoms in schizophrenia

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World Journal of Psychiatry 2024年第5期14卷 695-703页

作者： Wen-Peng Hou xiang-Qin Qin Wei-Wei Hou Yun-Yi Han Qi-Jing Bo Fang Dong Fu-Chun Zhou xian-bin li Chuan-Yue Wang Beijing Key Laboratory of Mental Disorders National Clinical Research Center for Mental Disorders&National Center for Mental DisordersBeijing Anding HospitalCapital Medical UniversityBeijing 100088China Advanced Innovation Center for Human Brain Protection Capital Medical UniversityBeijing 100069China

BACKGROUND Cognitive reserve(CR)and the catechol-O-methyltransferase(COMT)Val/Met polymorphism are reportedly linked to negative symptoms in ***,the regulatory effect of the COMT genotype on the relationship between CR and negative symptoms is still *** To investigate whether the relationship between CR and negative symptoms could be regulated by the COMT Val/Met *** In a cross-sectional study,54 clinically stable patients with schizophrenia underwent assessments for the COMT genotype,CR,and negative *** was estimated using scores in the information and similarities subtests of a short form of the Chinese version of the Wechsler Adult Intelligence *** COMT Met-carriers exhibited fewer negative symptoms than Val *** the total sample,significant negative correlations were found between negative symptoms and information,*** between information,similarities and negative symptoms were observed in Val homozygotes only,with information and similarities showing interaction effects with the COMT genotype in relation to negative symptoms(information,β=-0.282,95%CI:-0.552 to-0.011,P=0.042;similarities,β=-0.250,95%CI:-0.495 to-0.004,P=0.046).CONCLUSION This study provides initial evidence that the association between negative symptoms and CR is under the regulation of the COMT genotype in schizophrenia.

关键词： Catechol-O-methyltransferase Val/Met polymorphism Cognitive reserve Crystallized intelligence Negative symptoms Schizophrenia

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Metallic Graphene Nanoribbons

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Nano-Micro Letters 2021年第3期13卷 194-196页

作者： Sheng‑Yi Xie xian‑bin li School of Physics and Electronics Hunan University410082 ChangshaPeople’s Republic of China State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin University130012 ChangchunPeople’s Republic of China

Isolated graphene nanoribbons(GNRs)usually have energy gaps,which scale with their widths,owing to the lateral quantum confinement effect of *** absence of metallic GNRs limits their applications in device interconnects or being one-dimensional physics platform to research amazing properties based on metallicity.A recent study published in Science provided a novel method to produce metallic GNRs by inserting a symmetric superlattice into other semiconductive *** finding will broader the applications of GNRs both in nanoelectronics and fundamental science.

关键词： Graphene Nanoribbons Quantum confinement effect Supperlattice

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Unconventional phase transition of phase-change-memory materials for optical data storage

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Chinese Physics B 2019年第10期28卷 73-82页

作者： Nian-Ke Chen xian-bin li State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University

Recent years, optically controlled phase-change memory draws intensive attention owing to some advanced applications including integrated all-optical nonvolatile memory, in-memory computing, and neuromorphic computing. The light-induced phase transition is the key for this technology. Traditional understanding on the role of light is the heating effect. Generally, the RESET operation of phase-change memory is believed to be a melt-quenching-amorphization process. However, some recent experimental and theoretical investigations have revealed that ultrafast laser can manipulate the structures of phase-change materials by non-thermal effects and induces unconventional phase transitions including solid-to-solid amorphization and order-to-order phase transitions. Compared with the conventional thermal amorphization,these transitions have potential superiors such as faster speed, better endurance, and low power consumption. This article summarizes some recent progress of experimental observations and theoretical analyses on these unconventional phase transitions. The discussions mainly focus on the physical mechanism at atomic scale to provide guidance to control the phase transitions for optical storage. Outlook on some possible applications of the non-thermal phase transition is also presented to develop new types of devices.

关键词： light-matter interaction phase-change memory non-thermal phase transition optical data storage

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Theoretical Design of Defects as a Driving Force for Ion Transport in li_(3)OBr Solid Electrolyte

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Energy & Environmental Materials 2024年第3期7卷 143-153页

作者： Xingyun Luo Yanlu li xian Zhao State Key Lab of Crystal Materials and Institute of Crystal Materials Shandong UniversityJinan 250100China Center for Optics Research and Engineering Shandong UniversityQingdao 266237China

Due to ever-increasing concerns about safety issues in using li ionic batteries,solid electrolytes have extensively *** li-rich antiperovskite li_(3)OBr has been considered as a promising solid electrolyte candidate,but it still suffers challenges to achieve a high ionic conductivity owing to the high intrinsic symmetry of the crystal ***,we presented a design strategy that introduces various point defects and grain boundaries to break the high lattice symmetry of li_(3)OBr crystal,and their effect and microscopic mechanism of promoting the migration of li-ion were explored *** has been found that li_(i)are the dominant defects responsible for the fast li-ion diffusion in bulk li_(3)OBr and its surface,but they are easily trapped by the grain boundaries,leading to the annihilating of the Frenkel defect pair V'_(li)+li_(i),and thus limits the V'_(li)diffusion at the grain *** V_(Br)defect near the grain boundaries can effectively drive V'_(li)across the grain boundary,thereby converting the carrier of li^(+)migration from li,in the bulk and surface to V'_(li)at the grain boundary,and thus improving the ionic conductivity in the whole li_(3)OBr *** work provides a comprehensive insight into the li^(+)transport and conduction mechanism in the li_(3)OBr *** opens a new way of improving the conductivity for all-solid-state li electrolyte material through the defect design.

关键词： defects density functional theory ionic migration solid electrolyte

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Two-dimensional In_(2)Se_(3):A rising advanced material for ferroelectric data storage

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InfoMat 2022年第8期4卷 54-81页

作者： Yu-Ting Huang Nian-Ke Chen Zhen-Ze li Xue-Peng Wang Hong-Bo Sun Shengbai Zhang xian-bin li State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchunChina State Key Lab of Precision Measurement Technology and Instruments Department of Precision InstrumentTsinghua UniversityBeijingChina Department of Physics Applied Physicsand AstronomyRensselaer Polytechnic InstituteTroyNew YorkUSA

Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consump-tion,fast speed,and high ***,the ferroelectricity of conven-tional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer *** a result,the miniaturization of ferroelectric devices was hindered,which makes ferroelectric memory unable to keep up with the development of integrated-circuit(IC)***,a two-dimensional(2D)In2Se3 was reported to maintain stable ferro-electricity at the ultrathin scale,which is expected to break through the bottle-neck of ***,devices based on 2D In2Se3,including the ferroelectric field-effect transistor,ferroelectric channel transistor,synaptic fer-roelectric semiconductor junction,and ferroelectric memristor were ***,a comprehensive understanding of the structures and the ferroelectric-switching mechanism of 2D In2Se3 is still ***,the atomic structures of different phases,the dynamic mechanism of ferroelectric switching,and the performance/functions of the latest devices of 2D In2Se3 are ***,the correlations among the structures,the properties,and the device performance are ***,several crucial problems or challenges and possible research directions are put *** hope that this review paper can provide timely knowledge and help for the research commu-nity to develop 2D In2Se3 based ferroelectric memory and computing technol-ogy for practical industrial applications.

关键词： 2D ferroelectric device 2D ferroelectric material 2D In2Se3 neuromorphic computing nonvolatile memory

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Synthesis of Planar-Chiral[2.2]Paracyclophane-Based Oxazole-Pyrimidine ligands and Application in Nickel-Catalyzed 1,2-Reduction ofα,β-Unsaturated Ketones

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Chinese Journal of Chemistry 2024年第7期42卷 705-710页

作者： Juan Wang Qing-xian Xie xiang li Chang-bin Yu Yong-Gui Zhou School of Chemistry Dalian University of Technology2 Linggong RoadDalianLiaoning 116024China State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalianLiaoning 116023China

The planar-chiral ligands have been widely applied as a class of unique and significant ligands in asymmetric *** them,chiral[2.2]paracycyclophane has emerged as a privileged type of planar-chiral framework and has been utilized as an important toolbox due to their structural ***,we design and synthesize[2.2]paracyclophane-derived oxazole-pyrimidine ligands(abberviated as PYMCOX).These N,N-ligands with stable properties,rigid structure and large steric hindrance performed successfully in nickel-catalyzed asymmetric 1,2-reduction ofα,β-unsaturated ketones,affording the chiral allylic alcohols with up to 99%yield and 99%***,this reduction reaction could be conducted on gram-scale without loss of activity and enantioselectivity,and the chiral ligand could be conveniently recovered with high yield.

关键词： Oxazole-pyrimidine ligands Planar chirality Nickel Hydroboration Asymmetric synthesis

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lithium-induced graphene layer containing li_(3)P alloy phase to achieve ultra-stable electrode interface for lithium metal anode

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Rare Metals 2024年第2期43卷 562-574页

作者： Jia-Xin Chen Guo-Qiang Zhang xian-Ying Qin Kui lin Zi-Jin Yang Ge-Meng liang Yue Xia Guo-bin Zhang Hai-Kun Wu Qiu-Chan Cai Hai lin Bao-Hua li Shenzhen Key Laboratory on Power Battery Safety Research and Shenzhen Geim Graphene Center Tsinghua Shenzhen International Graduate SchoolShenzhen518055China Shenzhen Graphene Innovation Center Co. Ltd.Shenzhen518107China School of Chemical Engineering and Advanced Materials The University of AdelaideAdelaideSA5005Australia Department of Chemistry City University of Hong KongHong Kong990077China

Uncontrolled growth of lithium dendrite will lead to low Coulombic efficiency and poor cycle stability,which hinders the commercialization of lithium metal ***,a novel modified lithium anode with reduced graphene oxide conductive network containing trace lithiophilic phosphorus(P-rGO/Cu)is prepared by electrospraying technique combined with heat treatment *** rGO layer has a concave and undulating conductive structure,which can significantly improve the effective electrical contact between lithium metal and the current collector,speed up the kinetics of interfacial electron transport and reaction,and improve the resistance of the negative electrode to the internal stress caused by volume change of the lithium,which is advantageous for the stability of the SEI *** extremely small and uniformly distributed red phosphorus element avoids the volume change caused by lithiation to the maximum *** two-phase compound li_(3)P obtained by alloying P with li can directionally induce the homogeneous nucleation and dense deposition of lithium metal,address the issue of lithium dendrites and extend the cycle life of the *** obtained P-rGO/Cu exhibits excellent electrochemical performance with an average Coulombic efficiency(CE)of 98%at a current density of 1 mA·cm^(−2) for 400 cycles,and the capacity retention rate of the full cell matched with lithium iron phosphate(LFP)is 83%after 400 cycles at 1C.

关键词： lithium anode Dendrite-free lithiophilicity Induced nucleation deposition

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Excitation to defect-bound band edge states in twodimensional semiconductors and its effect on carrier transport

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npj Computational Materials 2019年第1期5卷 1070-1075页

作者： Dan Wang Dong Han Damien West Nian-Ke Chen Sheng-Yi Xie Wei Quan Tian Vincent Meunier Shengbai Zhang xian-bin li State Key Laboratory on Integrated Optoelectronics College of Electronic Science and EngineeringJilin University130012 ChangchunChina State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of Sciences130033 ChangchunChina Department of Physics Applied Physics&AstronomyRensselaer Polytechnic InstituteTroyNY 12180USA College of Chemistry and Chemical Engineering Chongqing UniversityHuxi Campus401331 ChongqingChina

The ionization of dopants is a crucial process for electronics,yet it can be unexpectedly difficult in two-dimensional materials due to reduced screening and *** first-principles calculations,here we propose a dopant ionization process for twodimensional semiconductors where charge carriers are only excited to a set of defect-bound band edge states,rather than to the true band edge states,as is the case in *** defect-bound states have small enough ionization energies but large enough spatial *** a modest defect density,carriers can transport through band by such states.

关键词： defect semiconductors states

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