检索结果-南通市图书馆

Silicon slow light photonic crystals structures:present achievements and future trends

在线全文

学校读者我要写书评

暂无评论

Frontiers of Optoelectronics 2011年第3期4卷 243-253页

作者： Eric CASSAN xavier le roux Charles CAER Ran HAO Damien BERNIER Delphine MARRIS-MORINI Laurent VIVIEN Institut d'Electronique Fondamentale Université Paris-Sud CNRS UMR 8622

Slow light in planar photonic structures has attracted for some years an increasing interest due to amazing physical effects it allows or reinforces and to the degrees of freedom it raises for designing new optical functions. Controlling light group velocity is achieved through the use of periodical optical media obtained by nano-structuration of semiconductor wafers at the scale of light wavelength: the so-called photonic crystals. This article reviews present achievements realized in the field of slow light photonic bandgap structures, including the physical principles of slow light to the description of the most advanced integrated optical devices relying on *** and current hot topics related to slow light are discussed to highlight the balance between the advantages and drawbacks of using slow waves in integrated photonic structures. Then, future trends are described, which is focused on the use of slow wave slot waveguides for nonlinear optics and bio-photonic applications.

关键词： slow light photonic crystals silicon photonics integrated optical devices

Large group-index bandwidth product empty core slow light photonic crystal waveguides for hybrid silicon photonics

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Frontiers of Optoelectronics 2014年第3期7卷 376-384页

作者： Charles CAER xavier le roux Samuel SERNA Weiwei ZHANG Laurent VIVIEN Eric CASSAN Institut d'Electronique Fondamentale University Paris-Sud CNRS UMR 8622 Bat. 220 91405 Orsay Cedex France

This paper investigates the slow light propaga- tion in silicon on insulator wide slot photonic crystal waveguides （PCWs）. Two design schemes are presented, relying on the dispersion engineering of hole lattice and slot, respectively. Mode patterns and band diagrams are calculated by 3D-plane wave expansion method. Then, coupling and slow light propagations are modeled using finite difference time domain method in a full Mach- Zehnder interferometer （MZI）. Results show high amplitudes interference fringes and high coupling efficiencies. Fabrication and measurement of devices lead to slow light propagation with group indices above 50, while multiple scattering and localized modes near the band edge also observed. This study provides insights for losses in hollow core slot high group index waveguides.

关键词： silicon photonics photonic crystals (PC) slot waveguides slow waves

Nonlinear optical properties of integrated GeSbS chalcogenide waveguides

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2018年第5期6卷 I0062-I0067页

作者： SAMUEL SERNA HONGTAO LIN CARLOS ALONSO-RAMOS ANUPAMA YADAV xavier le roux KATHleEN RICHARDSON ERIC CASSAN NICOLAS DUBREUIL JUEJUN HU LAURENT VIVIEN Centre de Nanosciences et de Nanotechnologies (C2N) CNRS Univ.Paris-Sud Université Paris SaclayC2N Orsay Laboratoire Charles Fabry Institut d'Optique Graduate SchoolCNRS Université Paris Saclay Department of Materials Science and Engineering Massachusetts Institute of Technology-MIT College of Optics and Photonics-CREOL University of Central Florida

In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23Sb7S70 （GeSbS） chalcogenide glass waveguides in the near-infrared wavdength range at λ = 1580 nm. We measured a waveguide nonlinear parameter of 7.0 4- 0.7 W-1 · m-1, which corresponds to a nonlinear refractive index of n2 =（0.93 ± 0.08） ×10-18 m2/W, comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient βTPA = （0.010± 0.003） cm/GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of GeSbS, with a measured nonlinear figure of merit FOM TPA = 6.0 ± 1.4 at λ = 1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities.

关键词： Nonlinear optical properties integrated GeSbS chalcogenide waveguides

Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2020年第3期8卷 352-358页

作者： CHRISTIAN LAFFORGUE SYLVAIN GUERBER JOAN MANEL RAMIREZ GUILLAUME MARCAUD CARLOS ALONSO-RAMOS xavier le roux DELPHINE MARRIS-MORINI ERIC CASSAN CHARleS BAUDOT FRéDéRIC BOEUF SéBASTIEN CREMER STéPHANE MONFRAY LAURENT VIVIEN Centre for Nanoscience and Nanotechnology(C2N) CNRSUniversitéParis-SudUniversitéParis-SaclayUMR 900191405 Orsay CedexFrance Technologie R&D STMicroelectronicsSAS850 rue Jean Monnet38920 CrollesFrance III-V lab a joint venture from Nokia Bell LabsThales and CEA1 Avenue Augustin Fresnel91767 Palaiseau CedexFrance

We report supercontinuum generation in nitrogen-rich(N-rich)silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor(CMOS)-compatible processes on a 300 mm *** pumping in the anomalous dispersion regime at a wavelength of 1200 nm,two-octave spanning spectra covering the visible and near-infrared ranges,including the O band,were *** calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride,despite the lower silicon content.N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.

关键词： waveguides pumping nitride

Third-order nonlinear optical susceptibility of crystalline oxide yttria-stabilized zirconia

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2020年第2期8卷 110-120页

作者： GUILLAUME MARCAUD SAMUEL SERNA KARAMANIS PANAGHIOTIS CARLOS ALONSO-RAMOS xavier le roux MATHIAS BERCIANO THOMAS MAROUTIAN GUILLAUME AGNUS PASCAL AUBERT ARNAUD JOLLIVET ALICIA RUIZ-CARIDAD LUDOVIC LARGEAU NATHALIE ISAC ERIC CASSAN SYLVIA MATZEN NICOLAS DUBREUIL MICHEL RERAT PHILIPPE leCOEUR LAURENT VIVIEN Centre de Nanosciences et Nanotechnologies(C2N) Université-Paris-SudCNRS UMR 9001Universite Paris-SaclayOrsay 91405France Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridgeMasschusetts 02139USA Department of Physics Bridgewater State UniversityBridgewaterMassachusetts 02325USA Institut des Sciences Analytiques et de Physico-Chimie pour l’Environnement et les Matériaux CNRSUniversite de Pau et des Pays de l’Adour64053 Pau CedexFrance Laboratoire Charles Fabry Institut d’Optique Graduate SchoolCNRSUniversitéParis-Saclay91127 Palaiseau CedexFrance LP2N Institut d’Optique Graduate SchoolCNRSUniv.Bordeaux33400 TalenceFrance

Nonlinear all-optical technology is an ultimate route for the next-generation ultrafast signal processing of optical communication *** nonlinear functionalities need to be implemented in photonics,and complex oxides are considered as promising candidates due to their wide panel of *** this context,yttria-stabilized zirconia(YSZ)stands out,thanks to its ability to be epitaxially grown on silicon,adapting the lattice for the crystalline oxide family of *** report,for the first time to the best of our knowledge,a detailed theoretical and experimental study about the third-order nonlinear susceptibility in crystalline *** self-phase modulation-induced broadening and considering the in-plane orientation of YSZ,we experimentally obtained an effective Kerr coefficient of n2YSZ=4.0±2×10^-19 m^2·W^-1 in an 8%(mole fraction)YSZ *** agreement with the theoretically predicted n2YSZ=1.3×10^-19 m^2·W^-1,the third-order nonlinear coefficient of YSZ is comparable with the one of silicon nitride,which is already being used in nonlinear *** promising results are a new step toward the implementation of functional oxides for nonlinear optical applications.

关键词： materials. nonlinear crystalline

25 Gbps low-voltage hetero-structured silicongermanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2019年第4期7卷 437-444页

作者： DANIEL BENEDIKOVIC LéOPOLD VIROT GUY AUBIN FARAH AMAR BERTRAND SZELAG BAYRAM KARAKUS JEAN-MICHEL HARTMANN CARLOS ALONSO-RAMOS xavier le roux PAUL CROZAT ERIC CASSAN DELPHINE MARRIS-MORINI CHARleS BAUDOT FRéDéRIC BOEUF JEAN-MARC FéDéLI CHRISTOPHE KOPP LAURENT VIVIEN Centre de Nanosciences et de Nanotechnologies CNRS University of Paris-Sud Université Paris-Saclay University Grenoble Alpes and CEA LETI Minatec Campus Technology R&D STMicroelectronics SAS

Near-infrared germanium(Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the highdata-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon(Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of^9 GHz at-1 V and ~30 GHz at-3 V, with a leakage dark current as low as ~150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10-9 is achieved for conventional 10 Gbps, 20 Gbps, and25 Gbps data rates, yielding optical power sensitivities of-13.85 dBm,-12.70 dBm, and-11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits.

关键词： germanium(Ge) photodetectors chip-scale nanophotonics waveguide photodetectors

Supercontinuum generation in silicon photonics platforms

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2022年第3期10卷 I0009-I0022页

作者： Christian Lafforgue Miguel Montesinos-Ballester Thi-Thuy-Duong Dinh xavier le roux Eric Cassan Delphine Marris-Morini Carlos Alonso-Ramos Laurent Vivien Centre de Nanosciences et de Nanotechnologies(C2N) CNRSUniversitéParis-Saclay91120 PalaiseauFrance

Nonlinear optics has not stopped evolving,offering opportunities to develop novel functionalities in *** generation,a nonlinear optical phenomenon responsible for extreme spectral broadening,attracts the interest of researchers due to its high potential in many applications,including sensing,imaging,or optical *** particular,with the emergence of silicon photonics,integrated supercontinuum sources in silicon platforms have seen tremendous progress during the past *** article aims at giving an overview of supercontinuum generation in three main silicon-compatible photonics platforms,namely,silicon,silicon germanium,and silicon nitride,as well as the essential theoretical elements to understand this fascinating phenomenon.

关键词： offering photonics Super

Efficacy and tolerability of chitin-glucan combined with simethicone(GASTRAP^(■)DIRECT)in irritable bowel syndrome:A prospective,open-label,multicenter study

在线全文

学校读者我要写书评

暂无评论

World Journal of Gastrointestinal Pharmacology and Therapeutics 2024年第3期15卷 10-22页

作者： Nathalie Talbodec Pauline le Roy Peggy Fournier Benoit lesage Elodie lepoutre François Castex Jean Michel Godchaux Lionel Vandeville Benjamin Bismuth xavier lesage Pauline Bayart Michael Genin Christel Rousseaux Veronique Maquet Salvatore Modica Pierre Desreumaux Caroline Valibouze Department of Gastroenterology Hôpital privéLe BoisLille 59000France Department of Gastroenterology Hôpital privéde Villeneuve d’AscqVilleneuve d’Ascq 59650France Univ.Lille CHU LilleULR 2694–METRICSÉvaluation des Technologies de Santéet des Pratiques MédicalesLille 59000France Development of Intestinal Biotech 1 Avenue Oscar LambretLille 59045France KitoZyme SA Parc Industriel des hauts Sarts Zone 2Rue de MilmortHerstal 4040Belgium BiOkuris A Parc Industriel des hauts Sarts Zone 2Rue de MilmortHerstal 4040Belgium Department of Hepato-Gastroenterology Lille University HospitalLille 59000France U1286-INFINITE Institute for Translational Research in InflammationUniv.LilleInsermCHU LilleLille 59000France Department of Digestive Surgery and Transplantation Lille University HospitalLille 59037France

BACKGROUND Irritable bowel syndrome(IBS),defined according to the Rome IV diagnostic criteria,is a chronic functional gastrointestinal disorder characterized by recurrent abdominal pain related to altered bowel ***-line recommended treatments are limited to combining drugs targeting predominant symptoms,particularly pain(antispasmodics),constipation(laxatives),and diarrhea(loperamide),yielding only a limited therapeutic ***^(■)DIRECT is a class IIa medical formulation composed of a combination of chitin-glucan and simethicone indicated for the symptomatic treatment of gas-related gastrointestinal disorders by combining different mechanisms of *** To evaluate the efficacy,tolerability,and safety of 4-week GASTRAP^(■)DIRECT treatment in patients with *** In this prospective,multicenter,open-label trial,120 patients with IBS received three sticks of GASTRAP^(■)DIRECT(1.5 g/d of chitin-glucan and 0.75 mg/d of simethicone)per day for 4 *** primary endpoint was the responder rate,defined as the number of patients whose abdominal pain score decreased by≥30%from baseline to week(W)*** analysis was performed using the per-protocol *** symptoms,impact of global symptoms on daily life,change in stool consistency,and improvement in defecatory disorders were *** Overall,100 patients were *** W4,67%(95%CI:57-75)showed improvement in abdominal pain(score:5.8±2.4 vs 2.9±2.0,Ple improvements by *** severe adverse event occurred,and tolerabil

关键词： Chitin-glucan Irritable bowel syndrome Abdominal pain Flatulence Defecatory disorders Stool consistency Natural non-pharmacological treatment

Bismuth(Ⅲ) Salts:Green Catalysts for Organic Transformations

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

复旦学报（自然科学版） 2005年第5期44卷 787-788页

作者： C. le roux Laboratoire Hétérochimie Fondamentale et Appliquée Université Paul Sabatier 118 Route de Narbonne 31062 Toulouse Cedex 4 France

Bismuth, the heaviest stable element in the periodic table, stands out from other heavy elements (such as mercury, thallium and lead) due to its relatively non-toxic character which confers on bismuth the enviable status of being an eco-friendly element. Therefore, bismuth and its compounds hold considerable promise as useful catalysts for green chemistry. The research presented in this communication is devoted to the applications of bismuth( Ⅲ ) salts as catalysts for organic *** some general comments about bismuth and a short presentation of the various applications of bismuth( Ⅲ ) salts in organic synthesis, this communication will focus on the works done in our research group during the last several years which deals mainly with electrophilic substitutions. When appropriate, some mechanistic details will be given.

关键词：铋盐催化剂有机变换合成方法有机化学