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Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts

Nano Research 2020年第1期13卷 61-66页

作者： Alexandre Bucamp Christophe Coinon David Troadec Sylvie Lepilliet Gilles Patriarche xavier wallart Ludovic Desplanque Univ.Lille CNRSCentrale LilleYncréa ISENUniv.Polytechnique Hauts-de-FranceUMR 8520-IEMNF-59000LilleFrance C2N-UMR 9001 CNRS UniversitéParis-Sud-UniversitéParis-Saclay91120PalaiseauFrance

Three-dimensional(3D)nanoscale crystal shaping has become essential for the precise design of advanced electronic and quantum devices based on electrically gated *** this context,Ⅲ-Ⅴ semiconductor-based nanowires with low electron effective mass and strong spin-orbit coupling are particularly investigated because of their exceptional quantum transport properties and the good electrostatic control they *** the main challenges involved in the processing of these nanodevices are(i)the management of the gate stack which requires ex-situ passivation treatment to reduce the density of traps at the oxide/semiconductor interface,(ii)the ability to get good ohmic contacts for source and drain electrodes and(iii)the scalability and reliability of the process for the fabrication of complex architectures based on nanowire *** this paper,we show that selective area molecular beam epitaxy of in-plane InGaAs/InP core-shell nanowires with raised heavily doped source and drain contacts can address these different *** characterization of the devices down to 4 K reveals the positive impact of the InP shell on the gate electrostatic control and effective electron *** comparable to the best reported values for In(Ga)As nanostructures grown on InP,this latter is severely reduced for sub-100 nm channel highlighting remaining issue to reach the ballistic regime.

关键词： molecular beam epitaxy core-shell nanowire selective area growth effective electron mobility

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Tunnel junctions in a III-V nanowire by surface engineering

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Nano Research 2015年第3期8卷 980-989页

作者： Salman Nadar Chloe Rolland Jean-Frangois Lampin xavier wallart Philippe Caroff Renaud Leturcq Institute of Electronics Microelectronics and Nanotechnology CNRS-UMR 8520 ISEN Department Avenue Poincare CS 60069 59652 Villeneuve d'Ascq Cedex France Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Canberra ACT0200 Australia Departement Science et Analyse des Mat~riaux Centre de Recherche Public-Gabriel Lippmann 41 rue du Brill L-4422 Belvaux Luxembourg

We demonstrate a simple way of fabricating high performance tunnel devices from p-doped InAs nanowires by tailoring the n-doped surface accumulation layer inherent to InAs surfaces. By using appropriate ammonium sulfide based surface passivation before metallization without any further thermal treatment, we demonstrate characteristics of tunnel p-n junctions, namely Esaki and backward diodes, with figures of merit better than previously published for InAs homojunctions. The further optimization of both the surface doping, in a quantitative way, and the device geometry allows us to demonstrate that these nanowire-based technologically-simple diodes have promising direct current characteristics for integrated high frequency detection or generation.

关键词： semiconductor nanowire tunnel junction indium arsenidecompounds doping Ⅲ-Ⅴ semiconductors

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