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Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

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Science China(Information Sciences) 2024年第6期67卷 198-206页

作者： Qiyu YANG Zheng-Dong LUO Fei XIAO Junpeng ZHANG Dawei ZHANG Dongxin TAN xuetao gan Yan LIU Zhufei CHU Yinshui XIA Genquan HAN Hangzhou Institute of Technology Xidian University State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University School of Artificial Intelligence Xidian University School of Materials Science and Engineering University of New South Wales (UNSW) Sydney ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET) University of New South Wales (UNSW) Sydney Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical University Faculty of Electrical Engineering and Computer Science Ningbo University

Driven by the explosive development of data-centric computation applications, it is becoming urgent to develop in-memory computing devices that are beyond the von Neumann architecture with an arrangement of separated logic and memory components. The transistor-type solid-state non-volatile memories,such as ferroelectric field-effect transistors(Fe FETs), have long been regarded as a competitive candidate for future in-memory computing architectures. However, the density scaling towards high-density arrays would require advanced Fe FETs with reduced footprints, which remains a great challenge so far. Here, a vertical-transport(VT) Fe FET that flips the charge transport channel perpendicular to the substrate plane is proposed, in which a ferroelectric gate and a van der Waals(vd W) heterojunction channel are vertically integrated, effectively reducing the device footprints. The proposed VT-Fe FET shows not only the robust binary non-volatile memory states but also several key synaptic functionalities at the device level. An artificial neural network with supervised learning was simulated based on the device conductance switching properties,showing excellent classification accuracy for the MNIST handwritten digits. These findings suggest that the proposed VT-Fe FET could offer a new solution for future non-volatile memories as well as more advanced neuromorphic systems.

关键词： vdW heterostructure non-volatile memory vertical-transport transistor ferroelectric field-effect transistor memristive devices

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Room-temperature ferromagnetism and piezoelectricity in metalfree 2D semiconductor crystalline carbon nitride

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Nano Research 2024年第6期17卷 5670-5679页

作者： Yong Wang Dingyi Yang Wei Xu Yongjie Xu Yu Zhang Zixuan Cheng Yizhang Wu xuetao gan Wei Zhong Yan Liu Genquan Han Yue Hao Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of MicroelectronicsAcademy of Advanced Interdisciplinary ResearchXidian UniversityXi’an 710071China Emerging Device and Chip Laboratory Hangzhou Institute of TechnologyXidian UniversityHangzhou 311200China INRS Centre for Energy Materials and Telecommunications1650 Boul.Lionel BouletVarennesQC J3X 1P7Canada National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for NanotechnologyNanjing UniversityNanjing 210093China School of Education Jiangsu Open UniversityNanjing 210036China Department of Physics Shaanxi University of Science and TechnologyXi’an 710021China Department of Applied Physical Sciences The University of North Carolina at Chapel HillChapel HillNC 27514USA Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi'an 710129 China

Two-dimensional(2D)materials that combine ferromagnetic,semiconductor,and piezoelectric properties hold significant potential for both fundamental research and spin electronic ***,the majority of reported 2D ferromagnetic-semiconductor-piezoelectric materials rely on d-electron systems,which limits their practical applications due to a Curie temperature lower than room temperature(RT).Here,we report a high-crystallinity carbon nitride(CCN)material based on sp-electrons using a chemical vapor deposition *** exhibits a band gap of 1.8 eV and has been confirmed to possess substantial in-plane and out-of-plane ***,we acquired clear evidences of ferromagnetic behavior at room *** structural characterizations combined with theoretical calculations reveal that incorporating structural oxygen into the highly ordered heptazine structure causes partial substitution of nitrogen sites,which is primarily responsible for generating room-temperature ferromagnetism and *** a result,the strain in wrinkles can effectively modulate the domain behavior and piezoelectric potential at room *** addition of RT ferromagnetic-semiconductor-piezoelectric material based on sp-electrons to the family of two-dimensional materials opens up numerous possibilities for novel applications in fundamental research and spin electronic devices.

关键词： crystallinity carbon nitride room-temperature ferromagnetism piezoelectricity magnetic force microscopy density functional theory(DFT)calculations

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Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

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Science China(Information Sciences) 2024年第9期67卷 346-347页

作者： Yong ZHANG Dongxin TAN Cizhe FANG Zheng-Dong LUO Qiyu YANG Qiao ZHANG Yu ZHANG xuetao gan Yan LIU Yue HAO Genquan HAN State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University Hangzhou Institute of Technology Xidian University Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and TechnologyNorthwestern Polytechnical University

Machine vision has become crucial in the modern intelligence era, especially in rapidly developing applications such as autonomous vehicles and robotic visual sensors [1].With the ever-increasing requirements of visua... 详细信息

关键词： Ferroelectric RAM

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硅基光电子芯片集成的胶体量子点有源器件(特邀)

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光学学报 2024年第15期44卷 158-180页

作者：瞿俊伶刘鹏甘雪涛赵建林西北工业大学物理科学与技术学院光场调控与信息感知工业和信息化部重点实验室陕西省光信息技术重点实验室陕西西安710129

胶体量子点(CQD)半导体材料具有吸收/发射谱段连续可调、荧光光谱窄(<30 nm)、量子产率高(约100%)、载流子输运灵活可控等优异的光电特性,以及大面积、低成本、无衬底限制等液相加工集成工艺优势,有望为硅基光电子芯片上有源器件的集成... 详细信息

胶体量子点(CQD)半导体材料具有吸收/发射谱段连续可调、荧光光谱窄(<30 nm)、量子产率高(约100%)、载流子输运灵活可控等优异的光电特性,以及大面积、低成本、无衬底限制等液相加工集成工艺优势,有望为硅基光电子芯片上有源器件的集成提供新的解决方案。从CQD的合成、光电特性、硅基片上集成工艺等角度展开讨论,并总结评述片上集成CQD有源器件的研究进展。最后,从硅基片上探测器、片上光源等角度,对基于CQD发展硅基光电子芯片上有源器件给出分析和展望。

关键词：胶体量子点硅基光电子芯片有源器件探测器光源

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“微腔光子学”专辑导读

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光子学报 2024年第5期53卷 1-2页

作者：甘雪涛李贝贝李峰西北工业大学中国科学院物理研究所西安交通大学

光学微腔作为典型的光学元器件,由于模式体积小、光学损耗低、结构紧凑,可以应用于非线性光学、集成光学、量子光学、高灵敏度传感器等多个领域从而受到广泛关注。近年来,随着光学材料微纳加工和半导体芯片工艺的发展,光学微腔逐渐走上... 详细信息

光学微腔作为典型的光学元器件,由于模式体积小、光学损耗低、结构紧凑,可以应用于非线性光学、集成光学、量子光学、高灵敏度传感器等多个领域从而受到广泛关注。近年来,随着光学材料微纳加工和半导体芯片工艺的发展,光学微腔逐渐走上可集成化的发展道路,同时,更小的模式体积、更精细的结构控制及更有效的模式调控微腔光子研究在光子学信息器件发展中扮演着至关重要的作用。

关键词：非线性光学量子光学光学微腔半导体芯片光子学光学元器件集成光学光学材料

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High-Q factor photonic crystal cavities with cut air holes [Invited]

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Chinese Optics Letters 2020年第6期18卷 86-92页

作者： Liang Fang xuetao gan Jianlin Zhao Key Laboratory of Space Applied Physics and Chemistry Ministry of Educationand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China

Planar photonic crystal(PPC)cavities with high quality(Q)factors were currently designed by missing or moving air ***,we propose that cutting air holes in PPC into semicircles could be considered as another strategy to realize and optimize cavities,presenting superiorities over cavities with missed or moved air holes in a higher Q factor and a smaller mode volume(Vmode).Examples are demonstrated:(1)in a PPC lattice,cutting two adjacent air holes promises a cavity mode with a Q exceeding 200,500 and an ultrasmall mode volume Vmode<0.329(λ/2 n)^3;(2)in a PPC waveguide,cutting two air holes on opposite sides of the waveguide supports a cavity mode with a Q exceeding 104,600 and a Vmode<1.22(λ/2 n)^3;(3)cutting the two air holes at the edges of an L3-type PPC cavity,the Q factor is optimized from 5500 to 124,700,with an almost constant *** concept of cutting air holes to introduce defects in PPC also promises the design of PPC also waveguides with an engineered transmission loss and dispersion.

关键词： photonic crystal cavity quality factor mode volume

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Second harmonic generation in a hollow-core fiber filled with GaSe nanosheets

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Science China(Information Sciences) 2022年第6期65卷 234-240页

作者： Zhen HAO Yuxin MA Biqiang JIANG Yueguo HOU Ailun LI Ruixuan YI xuetao gan Jianlin ZHAO MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University

Frequency conversions using various all-fiber nonlinear devices can benefit many applications, including communications, sensing, microscope, and imaging. In this study, we report in-fiber second harmonic generation(SHG) in an optical hollow-core fiber(HCF) that can be used for frequency conversion. The HCF filled with a dispersion of gallium selenide(GaS e) nanosheets in the ultraviolet-cured optical adhesive supports a well-propagating mode in the fiber core, which enables effective light interaction with dispersed GaS e nanosheets and a strong SHG process. Based on theoretical analysis, the optimal HCF length for maximizing SHG is approximately 0.41 mm. The broadband SHG of the GaS e-filled HCF device is demonstrated by tuning the pump wavelength from 1460 to 1600 nm. Moreover, a time-varied SHG in the device is revealed due to additional second-order susceptibility induced by the polarization of silica. The proposed device with a compact and robust structure has the potential to be connected to existing all-fiber telecom and sensing systems for numerous nonlinear engineering applications.

关键词： second-harmonic generation gallium selenide hollow-core fiber broadband operation wavelength time-varied second harmonic generation

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High-efficiency second-order nonlinear processes in an optical microfibre assisted by few-layer GaSe

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Light(Science & Applications) 2020年第1期9卷 1410-1417页

作者： Biqiang Jiang Zhen Hao Yafei Ji Yueguo Hou Ruixuan Yi Dong Mao xuetao gan Jianlin Zhao MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China

The centrosymmetric nature of silica fibre precludes the realisation of second-order nonlinear processes in optical fibre ***,the integration of 2D materials with optical fibres has opened up a great opportunity to develop allfibre active ***,we demonstrate high-efficiency second-order nonlinear frequency conversions in an optical microfibre assisted with few-layer gallium selenide(GaSe)*** to the strong evanescent field of the microfibre and ultrahigh second-order nonlinearity of the GaSe nanoflakes,second harmonic generation(SHG)and sum-frequency generation(SFG)are effectively achieved with only sub-milliwatt continuous-wave(CW)lasers in the wavelength range of 1500–1620 nm,covering the C and L telecom *** SHG intensity from the microfibre is enhanced by more than four orders of magnitude with the assistance of the GaSe nanoflakes on fibre nonlinear ***,in the SFG process,the intensity transfer between different frequencies can be effectively manipulated by changing the wavelengths and powers of two pump *** realised strong second-order nonlinearity in the GaSe-integrated microfibre might expand the applications of all-fibre devices in all-optical signal processing and new light source generation at awkward wavelengths.

关键词： fibre pump nonlinear

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Augmenting photoluminescence of monolayer MoS_(2) using high order modes in a metal dimer-on-film nanocavity

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Photonics Research 2021年第4期9卷 501-506页

作者： Shiyin Cao Liping Hou Qifa Wang Chenyang Li Weixing Yu xuetao gan Kaihui Liu Malin Premaratne Fajun Xiao Jianlin Zhao MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Key Laboratory of Spectral Imaging Technology of Chinese Academy of Sciences Xi’an 710119China State Key Laboratory for Mesoscopic Physics Collaborative Innovation Centre of Quantum MatterSchool of PhysicsPeking UniversityBeijing 100871China Advanced Computing and Simulation Laboratory(AχL) Department of Electrical and Computer Systems EngineeringMonash UniversityClaytonVIC 3800Australia

Plasmonic particle-on-film nanocavities,supporting gap modes with ultra-small volume,provide a great solution to boost light–matter interactions at the *** this work,we report on the photoluminescence(PL)enhancement of monolayer MoS_(2) using high order modes of an Au nanosphere dimer-on-film nanocavity(DoFN).The high order plasmon modes,consisting of two bonding quadrupoles in the dimer and their images in the Au film,are revealed by combining the polarization-resolved scattering spectra with the numerical *** integrating the monolayer MoS_(2) into the DoFN,these high order modes are used to enhance PL intensity through simultaneously boosting the absorption and emission processes,producing a 1350-fold enhancement *** opens an avenue to enhance the light–matter interaction with high order plasmon modes and may find applications in future optoelectronics and nanophotonics devices.

关键词： cavity high integrating

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High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces

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Opto-Electronic Advances 2021年第6期4卷 1-10页

作者： Cizhe Fang Qiyu Yang Qingchen Yuan xuetao gan Jianlin Zhao Yao Shao Yan Liu Genquan Han Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian UniversityXi’an 710071China MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Shanghai Energy Internet Research Institute of State Grid 251 Libing RoadPudong New AreaShanghai 201210China

The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum(BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.

关键词： all-dielectric metasurface bound states in the continuum optical nonlinearity topological configuration

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