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STCF conceptual design report (Volume 1): Physics & detector

Frontiers of physics 2024年第1期19卷 1-154页

作者： M.Achasov x.C.Ai L.P.An r.Aliberti Q.An x.Z.Bai Y.Bai O.Bakina A.Barnyakov V.Blinov V.Bobrovnikov D.Bodrov A.Bogomyagkov A.Bondar I.Boyko Z.H.Bu F.M.Cai H.Cai J.J.Cao Q.H.Cao x.Cao Z.Cao Q.Chang K.T.Chao D.Y.chen H.chen H.x.chen J.F.chen K.chen L.L.chen P.chen S.L.chen S.M.chen S.chen S.P.chen W.chen x.chen x.F.chen x.r.chen Y.chen Y.Q.chen H.Y.cheng J.cheng S.cheng T.G.cheng J.P.Dai L.Y.Dai x.C.Dai D.Dedovich A.Denig I.Denisenko J.M.Dias D.Z.Ding L.Y.Dong W.H.Dong V.Druzhinin D.S.Du Y.J.Du Z.G.Du L.M.Duan D.Epifanov Y.L.Fan S.S.Fang Z.J.Fang G.Fedotovich C.Q.Feng x.Feng Y.T.Feng J.L.Fu J.Gao Y.N.Gao P.S.Ge C.Q.Geng L.S.Geng A.Gilman L.Gong T.Gong B.Gou W.Gradl J.L.Gu A.Guevara L.C.Gui A.Q.Guo F.K.Guo J.C.Guo J.Guo Y.P.Guo Z.H.Guo A.Guskov K.L.Han L.Han M.Han x.Q.Hao J.B.He S.Q.He x.G.He Y.L.He Z.B.He Z.x.Heng B.L.Hou T.J.Hou Y.r.Hou C.Y.Hu H.M.Hu K.Hu r.J.Hu W.H.Hu x.H.Hu Y.C.Hu J.Hua G.S.Huang J.S.Huang M.Huang Q.Y.Huang W.Q.Huang x.T.Huang x.J.Huang Y.B.Huang Y.S.Huang N.Hüsken V.Ivanov Q.P.Ji J.J.Jia S.Jia Z.K.Jia H.B.Jiang J.Jiang S.Z.Jiang J.B.Jiao Z.Jiao H.J.Jing x.L.Kang x.S.Kang B.C.Ke M.Kenzie A.Khoukaz I.Koop E.Kravchenko A.Kuzmin Y.Lei E.Levichev C.H.Li C.Li D.Y.Li F.Li G.Li G.Li H.B.Li H.Li H.N.Li H.J.Li H.L.Li J.M.Li J.Li L.Li L.Li L.Y.Li N.Li P.r.Li r.H.Li S.Li T.Li W.J.Li x.Li x.H.Li x.Q.Li x.H.Li Y.Li Y.Y.Li Z.J.Li H.Liang J.H.Liang Y.T.Liang G.r.Liao L.Z.Liao Y.Liao C.x.Lin D.x.Lin x.S.Lin B.J.Liu C.W.Liu D.Liu F.Liu G.M.Liu H.B.Liu J.Liu J.J.Liu J.B.Liu K.Liu K.Y.Liu K.Liu L.Liu Q.Liu S.B.Liu T.Liu x.Liu Y.W.Liu Y.Liu Y.L.Liu Z.Q.Liu Z.Y.Liu Z.W.Liu I.Logashenko Y.Long C.G.Lu J.x.Lu N.Lu Q.F.Lü Y.Lu Y.Lu Z.Lu P.Lukin F.J.Luo T.Luo x.F.Luo Y.H.Luo H.J.Lyu x.r.Lyu J.P.Ma P.Ma Y.Ma Y.M.Ma F.Maas S.Malde D.Matvienko Z.x.Meng r.Mitchell A.Nefediev Y.Nefedov S.L.Olsen Q.Ouyang P.Pakhlov G.Pakhlova x.Pan Y.Pan E.Passemar Y.P.Pei H.P.Peng L.Peng x.Y.Peng x.J.Peng K.Peters S.Pivovarov E.Pyata B.B.Qi Y.Q.Qi W.B.Qian Y.Qian C.F.Qiao J.J.Qin J.J.Qin L.Q.Qin x.S.Qin T.L.Qiu J.rademacker C.F.redmer H.Y.Sang Anhui University Hefei 230039China Beihang University Beijing 100191China Budker Institute of Nuclear Physics Novosibirsk 630090Russia CAS Key Laboratory of Theoretical Physics Institute of Theoretical PhysicsChinese Academy of SciencesBeijing 100190China Cavendish Laboratory University of CambridgeJJ Thomson AveCambridge CB30HEUnited Kingdom Central China Normal University Wuhan 430079China Central South University Changsha 410083China China University of Geosciences Wuhan 430074China China University of Mining and Technology Xuzhou 221116China École Polytechnique Fédérale de Lausanne(EPFL) LausanneSwitzerland Fudan University Shanghai 200433China Goethe University Frankfurt D-60325 Frankfurt am MainGermany Guangxi Normal University Guilin 541004China Guangxi Uninversity Nanning 530004China Hangzhou Institute for Advanced Study UCASHangzhou 310024China Hebei Normal University Shijiazhuang 050024China Hebei University Baoding 071002China Hefei University of Technology Hefei 230601China Helmholtz Institute Mainz Staudinger Weg 18D-55099 MainzGermany Henan Normal University Xinxiang 453007China Henan University Kaifeng 475004China High Energy Physics Center Chung-Ang UniversitySeoul 06974Korea Higher School of Economy 11 Pokrovsky Bulvar Moscow 109028Russia Huangshan University Huangshan 245000China Hubei University of Automotive Technology Shiyan 442002China Hunan Normal University Changsha 410081China Hunan University of Science and Technology Xiangtan 411201China Hunan University Changsha 410082China Indiana University BloomingtonIndiana 47405USA Inner Mongolia University Hohhot 010021China Institute of Advanced Science Facilities Shenzhen 518107China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China Institute of Physics Academia SinicaTaipeiTaiwan 11529China Institute of Theoretical Physics Chinese Academy of SciencesBeijing 100190China Jilin University Changch

The superτ-charm facility(STCF)is an electron–positron collider proposed by the Chinese particle physics *** is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of 0.5×10^(35) cm^(–2)·s^(–1) or *** STCF will produce a data sample about a factor of 100 larger than that of the presentτ-charm factory—the BEPCII,providing a unique platform for exploring the asymmetry of matter-antimatter(charge-parity violation),in-depth studies of the internal structure of hadrons and the nature of non-perturbative strong interactions,as well as searching for exotic hadrons and physics beyond the Standard *** STCF project in China is under development with an extensive r&D *** document presents the physics opportunities at the STCF,describes conceptual designs of the STCF detector system,and discusses future plans for detector r&D and physics case studies.

关键词： electron–positron collider tau-charm region high luminosity STCF detector conceptual design

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Amplitude analysis of the decays D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)

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Chinese Physics C 2024年第8期48卷 6-33页

作者： M.Ablikim M.N.Achasov P.Adlarson O.Afedulidis x.C.Ai r.Aliberti A.Amoroso Q.An Y.Bai O.Bakina I.Balossino Y.Ban H.-r.Bao V.Batozskaya K.Begzsuren N.Berger M.Berlowski M.Bertani D.Bettoni F.Bianchi E.Bianco A.Bortone I.Boyko r.A.Briere A.Brueggemann H.Cai x.Cai A.Calcaterra G.F.Cao N.Cao S.A.Cetin J.F.Chang W.L.Chang G.r.Che G.Chelkov C.chen C.H.chen Chao chen G.chen H.S.chen M.L.chen S.J.chen S.L.chen S.M.chen T.chen x.r.chen x.T.chen Y.B.chen Y.Q.chen Z.J.chen Z.Y.chen S.K.Choi x.Chu G.Cibinetto F.Cossio J.J.Cui H.L.Dai J.P.Dai A.Dbeyssi r.E.de Boer D.Dedovich C.Q.Deng Z.Y.Deng A.Denig I.Denysenko M.Destefanis F.De Mori B.Fang S.S.Fang W.x.Fang Y.Fang Y.Q.Fang r.Farinelli L.Fava F.Feldbauer G.Felici C.Q.Feng J.H.Feng Y.T.Feng K.Fischer M.Fritsch C.D.Fu J.L.Fu Y.W.Fu H.Gao Y.N.Gao Yang Gao S.Garbolino I.Garzia P.T.Ge Z.W.Ge C.Geng E.M.Gersabeck B.Ding x.x.Ding Y.Ding Y.Ding J.Dong L.Y.Dong M.Y.Dong x.Dong M.C.Du S.x.Du Z.H.Duan P.Egorov Y.H.Fan J.Fang JA.Gilman K.Goetzen L.Gong W.x.Gong W.Gradl S.Gramigna M.Greco M.H.Gu Y.T.Gu C.Y.Guan Z.L.Guan A.Q.Guo L.B.Guo M.J.Guo r.P.Guo Y.P.Guo A.Guskov J.Gutierrez K.L.Han T.T.Han x.Q.Hao F.A.Harris K.K.He K.L.He F.H.Heinsius C.H.Heinz Y.K.Heng C.Herold T.Holtmann P.C.Hong G.Y.Hou x.T.Hou Y.r.Hou Z.L.Hou B.Y.Hu H.M.Hu J.F.Hu T.Hu Y.Hu G.S.Huang K.x.Huang L.Q.Huang x.T.Huang Y.P.Huang T.Hussain F.H\"olzken N.H\"usken N.in der Wiesche M.Irshad J.Jackson S.Janchiv J.H.Jeong Q.Ji Q.P.Ji W.Ji x.B.Ji x.L.Ji Y.Y.Ji x.Q.Jia Z.K.Jia D.Jiang H.B.Jiang P.C.Jiang S.S.Jiang T.J.Jiang x.S.Jiang Y.Jiang J.B.Jiao J.K.Jiao Z.Jiao S.Jin Y.Jin M.Q.Jing x.M.Jing T.Johansson S.Kabana N.Kalantar-Nayestanaki x.L.Kang x.S.Kang M.Kavatsyuk B.C.Ke V.Khachatryan A.Khoukaz r.Kiuchi O.B.Kolcu B.Kopf M.Kuessner x.Kui A.Kupsc W.K\"uhn J.J.Lane P.Larin L.Lavezzi T.T.Lei Z.H.Lei H.Leithoff M.Lellmann T.Lenz C.Li C.Li C.H.Li cheng Li D.M.Li F.Li G.Li H.Li H.B.Li H.J.Li H.N.Li Hui Li J.r.Li J.S.Li K.Li L.J.Li L.K.Li Lei Li M.H.Li P.r.Li Q.M.Li Q.x.Li r.Li S.x.Li T.Li W.D.Li W.G.Li x.Li x.H.Li x.L.Li x.Y.Li Y Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Beihang University Beijing 100191China Bochum ruhr-University D-44780 BochumGermany Budker Institute of Nuclear Physics SB rAS(BINP) Novosibirsk 630090Russia Carnegie Mellon University PittsburghPennsylvania 15213USA Central China Normal University Wuhan 430079China Central South University Changsha 410083China China Center of Advanced Science and Technology Beijing 100190China China University of Geosciences Wuhan 430074China Chung-Ang University Seoul06974Republic of Korea COMSATS University Islamabad Lahore CampusDefence RoadOff Raiwind Road54000 LahorePakistan Fudan University Shanghai 200433China GSI Helmholtzcentre for Heavy Ion research GmbH D-64291 DarmstadtGermany Guangxi Normal University Guilin 541004China Guangxi University Nanning 530004China Hangzhou Normal University Hangzhou 310036China Hebei University Baoding 071002China Helmholtz Institute Mainz Staudinger Weg 18D-55099 MainzGermany Henan Normal University Xinxiang 453007China Henan University Kaifeng 475004China Henan University of Science and Technology Luoyang 471003China Henan University of Technology Zhengzhou 450001China Huangshan College Huangshan 245000China Hunan Normal University Changsha 410081China Hunan University Changsha 410082China Indian Institute of Technology Madras Chennai 600036India Indiana University BloomingtonIndiana 47405USA INFN Laboratori Nazionali di Frascati INFN Laboratori Nazionali di FrascatiI-00044FrascatiItaly INFN Laboratori Nazionali di Frascati INFN Sezione di PerugiaI-06100PerugiaItaly INFN Laboratori Nazionali di Frascati University of PerugiaI-06100PerugiaItaly INFN Sezione di Ferrara INFN Sezione di FerraraI-44122FerraraItaly INFN Sezione di Ferrara University of FerraraI-44122FerraraItaly Inner Mongolia University Hohhot 010021China Institute of Modern Physics Lanzhou 730000China Institute of Physics and Technology Peace Avenue 54BUlaanbaatar 13330Mongolia Instituto de A

Using e^(+)e^(−)annihilation data corresponding to an integrated luminosity of 2.93 fb^(−1)taken at the center-of-mass energy√s=3.773 GeV with the BESIII detector,a joint amplitude analysis is performed on the decays D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η).The fit fractions of individual components are obtained,and large interferences among the dominant components of the decays D^(0)→a_(1)(1260)π,D^(0)→π(1300)π,D^(0)→ρ(770)ρ(770),and D^(0)→2(ππ)_(S)are observed in both *** the obtained amplitude model,the CP-even fractions of D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η)are determined to be(75.2±1.1_(stat).±1.5_(syst.))%and(68.9±1.5_(stat).±2.4_(syst.))%,*** branching fractions of D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η)are measured to be(0.688±0.010_(stat.)±0.010_(syst.))%and(0.951±0.025_(stat.)±0.021_(syst.))%,*** amplitude analysis provides an important model for the binning strategy in measuring the strong phase parameters of D^(0)→4πwhen used to determine the CKM angleγ(ϕ_(3))via the B^(−)→DK^(−)decay.

关键词： BESIII D^(0)meson decays amplitude analysis CP-even fraction

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Determination of the number ofψ(3686)events taken at BESⅢ

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Chinese Physics C 2024年第9期48卷 8-20页

作者： M.Ablikim M.N.Achasov P.Adlarson O.Afedulidis x.C.Ai r.Aliberti A.Amoroso Q.An Y.Bai O.Bakina I.Balossino Y.Ban H.-r.Bao V.Batozskaya K.Begzsuren N.Berger M.Berlowski M.Bertani D.Bettoni F.Bianchi E.Bianco A.Bortone I.Boyko r.A.Briere A.Brueggemann H.Cai x.Cai A.Calcaterra G.F.Cao N.Cao S.A.Cetin J.F.Chang G.r.Che G.Chelkov C.chen C.H.chen Chao chen G.chen H.S.chen H.Y.chen M.L.chen S.J.chen S.L.chen S.M.chen T.chen x.r.chen x.T.chen Y.B.chen Y.Q.chen Z.J.chen Z.Y.chen S.K.Choi G.Cibinetto F.Cossio J.J.Cui H.L.Dai J.P.Dai A.Dbeyssi r.E.de Boer D.Dedovich C.Q.Deng Z.Y.Deng A.Denig I.Denysenko M.Destefanis F.De Mori B.Ding x.x.Ding Y.Ding Y.Ding J.Dong L.Y.Dong M.Y.Dong x.Dong M.C.Du S.x.Du Y.Y.Duan Z.H.Duan P.Egorov Y.H.Fan J.Fang J.Fang S.S.Fang W.x.Fang Y.Fang Y.Q.Fang r.Farinelli L.Fava F.Feldbauer G.Felici C.Q.Feng J.H.Feng Y.T.Feng M.Fritsch C.D.Fu J.L.Fu Y.W.Fu H.Gao x.B.Gao Y.N.Gao Yang Gao S.Garbolino I.Garzia L.Ge P.T.Ge Z.W.Ge C.Geng E.M.Gersabeck A.Gilman K.Goetzen L.Gong W.x.Gong W.Gradl S.Gramigna M.Greco M.H.Gu Y.T.Gu C.Y.Guan Z.L.Guan A.Q.Guo L.B.Guo M.J.Guo r.P.Guo Y.P.Guo A.Guskov J.Gutierrez K.L.Han T.T.Han F.Hanisch x.Q.Hao F.A.Harris K.K.He K.L.He F.H.Heinsius C.H.Heinz Y.K.Heng C.Herold T.Holtmann P.C.Hong G.Y.Hou x.T.Hou Y.r.Hou Z.L.Hou B.Y.Hu H.M.Hu J.F.Hu S.L.Hu T.Hu Y.Hu G.S.Huang K.x.Huang L.Q.Huang x.T.Huang Y.P.Huang T.Hussain F.Hölzken N.Hüsken N.in der Wiesche J.Jackson S.Janchiv J.H.Jeong Q.Ji Q.P.Ji W.Ji x.B.Ji x.L.Ji Y.Y.Ji x.Q.Jia Z.K.Jia D.Jiang H.B.Jiang P.C.Jiang S.S.Jiang T.J.Jiang x.S.Jiang Y.Jiang J.B.Jiao J.K.Jiao Z.Jiao S.Jin Y.Jin M.Q.Jing x.M.Jing T.Johansson S.Kabana N.Kalantar-Nayestanaki x.L.Kang x.S.Kang M.Kavatsyuk B.C.Ke V.Khachatryan A.Khoukaz r.Kiuchi O.B.Kolcu B.Kopf M.Kuessner x.Kui N.Kumar A.Kupsc W.Kühn J.J.Lane P.Larin L.Lavezzi T.T.Lei Z.H.Lei M.Lellmann T.Lenz C.Li C.Li C.H.Li cheng Li D.M.Li F.Li G.Li H.B.Li H.J.Li H.N.Li Hui Li J.r.Li J.S.Li Ke Li L.J.Li L.K.Li Lei Li M.H.Li P.r.Li Q.M.Li Q.x.Li r.Li S.x.Li T.Li W.D.Li W.G.Li x.Li x.H.Li x.L.Li x.Z.Li xi Institute of High Energy Physics Beijing 100049China Beihang University Beijing 100191China Bochum ruhr-University D-44780BochumGermany Budker Institute of Nuclear Physics SB rAS(BINP) Novosibirsk 630090Russia Carnegie Mellon University PittsburghPennsylvania 15213USA Central China Normal University Wuhan 430079China Central South University Changsha 410083China China Center of Advanced Science and Technology Beijing 100190China China University of Geosciences Wuhan 430074China Chung-Ang University Seoul06974Republic of Korea COMSATS University Islamabad Lahore CampusDefence RoadOff Raiwind Road54000LahorePakistan Fudan University Shanghai 200433China GSI Helmholtzcentre for Heavy Ion research GmbH D-64291DarmstadtGermany Guangxi Normal University Guilin 541004China Guangxi University Nanning 530004China Hangzhou Normal University Hangzhou 310036China Hebei University Baoding 071002China Helmholtz Institute Mainz Staudinger Weg 18D-55099MainzGermany Henan Normal University Xinxiang 453007China Henan University Kaifeng 475004China Henan University of Science and Technology Luoyang 471003China Henan University of Technology Zhengzhou 450001China Huangshan College Huangshan 245000China Hunan Normal University Changsha 410081China Hunan University Changsha 410082China Indian Institute of Technology Madras Chennai 600036India Indiana University BloomingtonIndiana 47405USA INFN Laboratori Nazionali di Frascati (A)INFN Laboratori Nazionali di FrascatiI-00044FrascatiItaly(B)INFN Sezione di PerugiaI-06100PerugiaItaly(C)University of PerugiaI-06100PerugiaItaly INFN Sezione di Ferrara (A)INFN Sezione di FerraraI-44122FerraraItaly(B)University of FerraraI-44122FerraraItaly Inner Mongolia University Hohhot 010021China Institute of Modern Physics Lanzhou 730000China Institute of Physics and Technology Peace Avenue 54BUlaanbaatar 13330Mongolia Instituto de Alta Investigación Universidad de TarapacáCasilla 7DArica 1000000Chile Jilin University Changchun 130012China Joha

The number ofψ(3686)events collected by the BESⅢdetector during the 2021 run period is determined to be(2259.3±11.1)×10~6 by counting inclusiveψ(3686)hadronic *** uncertainty is systematic and the statistical uncertainty is ***,the numbers ofψ(3686)events collected during the 2009 and 2012run periods are updated to be(107.7±0.6)×10~6 and(345.4±2.6)×10~6,*** numbers are consistent with the previous measurements within one standard *** total number ofψ(3686)events in the three data samples is(2712.4±14.3)×10~6.

关键词： ψ(3686) inclusive process Hadronic events BESⅢdetector

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Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO_(2)thin films

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Chinese Physics B 2024年第9期33卷 637-643页

作者： S x chen M M chen Y Liu D W Cao G J chen Department of Microelectronics Jiangsu UniversityZhenjiang 212013China Department of Physics Jiangsu UniversityZhenjiang 212013China Guangdong–Hong Kong–Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology Foshan UniversityFoshan 528225China

Ferroelectric HfO_(2)has attracted much attention owing to its superior ferroelectricity at an ultra-thin thickness and good compatibility with Si-based complementary metal-oxide-semiconductor(CMOS)***,the crystallization of polar orthorhombic phase(o-phase)HfO_(2)is less competitive,which greatly limits the ferroelectricity of the as-obtained ferroelectric HfO_(2)thin ***,the crystallization of o-phase HfO_(2)can be thermodynamically modulated via interfacial stress *** this paper,the growth of improved ferroelectric Al doped HfO_(2)(HfO_(2):Al)thin films on(111)-oriented Si substrate has been *** analysis has suggested that nonpolar monoclinic HfO_(2):Al grown on(111)-oriented Si substrate suffered from a strong compressive strain,which promoted the crystallization of(111)-oriented o-phase HfO_(2)in the as-grown HfO_(2):Al thin *** addition,the in-plane lattice of(111)-oriented Si substrate matches well with that of(111)-oriented o-phase HfO_(2),which further thermally stabilizes the o-phase HfO_(2).Accordingly,an improved ferroelectricity with a remnant polarization(2P_(r))of 26.7C/cm^(2) has been *** results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO_(2)thin films.

关键词： improved ferroelectricity interfacial stress engineering compressive strain HfO_(2)

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Profile of *** chen

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Science China(Life Sciences) 2024年第10期67卷 2062-2063页

作者： chen, Songlin Yellow Sea Fisheries res Inst Qingdao Peoples R China

For decades,*** has been engaged in fish germplasm preservation,sex control and research focusing on molecular breeding for disease *** discovered the first sex-specific molecular marker of fish(chen et al.,2007),deciphered the first fish genome(Chinese tongue sole)in China,revealed the sex determination mechanism in fish(chen et al.,2014),and created molecular sex control *** also discovered the molecular mechanism of metamorphosis in flatfish(Shao et al.,2017)and developed China's first fish disease-resistant breeding gene chip,“YUxIN No.1”.

关键词： technology breeding

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rational design of AgGaS/ZnS/ZnS quantum dots with a near-unity photoluminescence quantum yield via double shelling scheme

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Journal of Materials Science & Technology 2024年第2期169卷 235-242页

作者： H.x.Lu H.Liu Z.Z.Fu Y.Y.chen H.Q.Dai Z.Hu W.L.Zhang r.Q.Guo Institute for Electric Light Sources School of Information Science and TechnologyFudan UniversityShanghai 200433China Institute of Future Lighting Academy for Engineering and TechnologyFudan UniversityShanghai 200433China Yiwu research Institute of Fudan University YiwuZhejiang 322000China Zhongshan-Fudan Joint Innovation Center Zhongshan 528437China

In this study,a two-step method was used to synthesize highly luminescent AgGaS/ZnS/ZnS quantum dots(QDs).In the first step,an inner ZnS shell was formed via a one-pot method,which resulted in a smaller lattice mismatch between the AgGaS core and the outer ZnS shell,thereby facilitating the formation of a thick outer *** the two-step shelling process,the synthesized AgGaS/ZnS/ZnS QDs showed an excellent photoluminescence quantum yield(PLQY)of 96.4%with a peak wavelength of 508 nm,repre-senting the highest PLQY reported thus far for AgGaS ***,the effect of halogen ions in Zn precursors on the shelling process was *** was proposed that the capacity of halogen ions to coordinate with the QDs influenced the balance between Zn cation diffusion and ZnS shelling ***,the ZnS shelling reaction was dominant when ZnCl_(2)was employed,while Zn cation diffusion was the dominant process under the I^(−)-rich *** work provides insights into the interfacial restructuring during the ZnS shelling and offers a clear map for the tailored synthesis of core/shell QDs.

关键词： AgGaS Quantum dots Photoluminescence Core/shell Alloyed core/shell interface

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Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators

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National Science review 2024年第2期11卷 15-23页

作者： rui chen Hai-Peng Sun Mingqiang Gu Chun-Bo Hua Qihang Liu Hai-Zhou Lu x.C.xie Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology(SUSTech) International Quantum Academy Institute for Theoretical Physics and Astrophysics University of Würzburg School of Electronic and Information Engineering Hubei University of Science and Technology Guangdong Provincial Key Laboratory of Computational Science and Material Design Southern University of Science and Technology Shenzhen Key Laboratory of Quantum Science and Engineering International Center for Quantum Materials School of PhysicsPeking University Collaborative Innovation Center of Quantum Matter CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences

The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi2Te4thin films under perpendicular electric fields. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but non-zero layer-locked hidden Berry curvature in real space. We show that, compared to that of a trivial insulator, the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators. Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries, and can be generalized in various scenarios.

关键词： layerHall effect hidden Berry curvature antiferromagnetic insulator axion insulator, quantum transport

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Generation of polarized electron beams through self-injection in the interaction of a laser with a pre-polarized plasma

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High Power Laser Science and Engineering 2024年第3期12卷 62-68页

作者： L.r.Yin x.F.Li Y.J.Gu N.Cao Q.Kong M.Büscher S.M.Weng M.chen Z.M.Sheng Key Laboratory of Nuclear Physics and Ion-beam Application(MoE) Institute of Modern PhysicsDepartment of Nuclear Science and TechnologyFudan UniversityShanghaiChina State Key Laboratory of High Field Laser Physics Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghaiChina SANKEN(Institute of Scientific and Industrial research) Osaka UniversityOsakaJapan Sichuan research Institute Shanghai Jiao Tong UniversityChengduChina Peter Grünberg Institut(PGI-6) Forschungszentrum JülichJülichGermany Institut für Laser-und Plasmaphysik Heinrich-Heine-Universität DüsseldorfDüsseldorfGermany Key Laboratory for Laser Plasmas(MoE) School of Physics and AstronomyShanghai Jiao Tong UniversityShanghaiChina Collaborative Innovation Center of IFSA Shanghai Jiao Tong UniversityShanghaiChina Tsung-Dao Lee Institute Shanghai Jiao Tong UniversityShanghaiChina

Polarized electron beam production via laser wakefield acceleration in pre-polarized plasma is investigated by particlein-cell *** evolution of the electron beam polarization is studied based on the Thomas±Bargmann±Michel±Telegdi equation for the transverse and longitudinal self-injection,and the depolarization process is found to be influenced by the injection *** the case of transverse self-injection,as found typically in the bubble regime,the spin precession of the accelerated electrons is mainly influenced by the ***,in the case of longitudinal injection in the quasi-1D regime(for example,*** et al.,***.110,135002(2013)),the direction of electron spin oscillates in the laser *** the electrons move around the laser axis,the net influence of the laser field is nearly zero and the contribution of the wakefield can be ***,an ultra-short electron beam with polarization of 99%can be obtained using longitudinal self-injection.

关键词： laser wakefield acceleration longitudinal self-injection particle-in-cell simulation polarized electron beam

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Effect of reclamation on the Groundwater-Lake Water Interaction in chen Lake

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Journal of Earth Science 2024年第3期35卷 1083-1086页

作者： Kun Lei Teng Ma Liuzhu chen Zhenxing Li Yu chen School of Environmental Studies State Key Laboratory of Biogeology and Environmental GeologyChina University of GeosciencesWuhan 430078China

0 INTrODUCTION To relieve the short supply of suitable land for residing,cultivating,and commerce,it is accepted to reclaim land from lakes,river estuaries,and coastal regions in many countries(Mancini et al.,2020).The large-scale reclamation activities have an irreversible effect on the mico-geomorphology and hydrodynamic system of seasonally flooded areas(Zhang et al.,2019;Yu et al.,2018).For example,coastal regions reclaimed extended the groundwater flow paths,as well as created groundwater level rise,resulting in water-logging in the reclaimed area(Hu et al.,2008).Similar changes in groundwater flow systems may alter groundwater-lake water interactions,and it can ultimately affect the water cycle in the lake ***,such detailed studies are presently *** addition,natural exchanges between the lake and groundwater systems can be strongly affected by physical hydrological processes(Javadzadeh et al.,2020),chemical properties(Kamtchueng et al.,2015),and bioto behavior(Hancock et al.,2005).

关键词： groundwater coastal logging

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Dual Additives for Stabilizing Li Deposition and SEI Formation in Anode-Free Li-Metal Batteries

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Energy & Environmental Materials 2024年第3期7卷 84-92页

作者： Baolin Wu Chunguang chen Dmitri L.Danilov Zhiqiang chen Ming Jiang rüdiger-A.Eichel Peter H.L.Notten Forschungszentrum Jülich(IEK-9) D-52425Jülich Germany rWTH Aachen University D-52074Aachen Germany LNM Institute of MechanicsChinese Academy of SciencesBeijing 100190China School of Engineering Sciences University of Chinese Academy of SciencesBeijing 100049China Eindhoven University of Technology P.O.Box 5135600 MBEindhoven The Netherlands School of Electronics and Information Institute of Carbon Neutrality and New EnergyHangzhou Dianzi UniversityHangzhou 310018China University of Technology Sydney BroadwaySydney NSW 2007Australia

Anode-free Li-metal batteries are of significant interest to energy storage industries due to their intrinsically high ***,the accumulative Li dendrites and dead Li continuously consume active Li during *** results in a short lifetime and low Coulombic efficiency of anode-free Li-metal *** effective electrolyte additives can improve the Li deposition homogeneity and solid electrolyte interphase(SEI)stability for anode-free Li-metal ***,we reveal that introducing dual additives,composed of LiAsF6 and fluoroethylene carbonate,into a low-cost commercial carbonate electrolyte will boost the cycle life and average Coulombic efficiency of NMC‖Cu anode-free Li-metal *** NMC‖Cu anode-free Li-metal batteries with the dual additives exhibit a capacity retention of about 75%after 50 cycles,much higher than those with bare electrolytes(35%).The average Coulombic efficiency of the NMC‖Cu anode-free Li-metal batteries with additives can maintain 98.3%over 100 *** contrast,the average Coulombic efficiency without additives rapidly decline to 97%after only 50 *** situ raman measurements reveal that the prepared dual additives facilitate denser and smoother Li morphology during Li *** dual additives significantly suppress the Li dendrite growth,enabling stable SEI formation on anode and cathode *** results provide a broad view of developing low-cost and high-effective functional electrolytes for high-energy and long-life anode-free Li-metal batteries.

关键词： anode-free lithium metal battery dual additives in situ raman Li growth SEI formation

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