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Large area van der Waals epitaxy of II-VI CdSe thin films for flexible optoelectronics and full-color imaging

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Nano Research 2022年第1期15卷 368-376页

作者： wenwu pan Junliang Liu Zekai Zhang Renjie Gu Alexandra Suvorova Sarah Gain Han Wang Ziyuan Li Lan Fu Lorenzo Faraone Wen Lei Department of Electrical Electronic and Computer EngineeringThe University of Western Australia35 Stirling HighwayCrawley 6009Australia Centre for Microscopy Characterisation and AnalysisThe University of Western Australia35 Stirling HighwayPerth 6009Australia Department of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia

The demand for future semiconductor devices with enhanced performance and lower cost has driven the development of epitaxial growth of high quality,free-standing semiconductor thin film materials without the requirement of lattice matching to the substrate,as well as their transfer to other substrates and associated device processing *** work presents a study on the van der Waals epitaxy based molecular beam epitaxy of CdSe thin films on two-dimensional layered mica substrates,as well as related etch-free layer transfer technology of large area,free-standing layers and their application in flexible photodetectors for full-color *** photoconductor detectors based on these flexible CdSe thin films demonstrate excellent device performance at room temperature in terms of responsivity(0.2 A·W^(-1))and detectivity(1.5×10^(12)Jones),leading to excellent full-color imaging quality in the visible spectral *** etch-free and damage-free layer transfer method has been developed for transferring these CdSe thin films from mica to other substrate for further device processing and *** results demonstrate the feasibility of van der Waals epitaxy method for growing high quality,large area,and free-standing epitaxial layers without the requirement for lattice matching to substrate for applications in low-cost flexible and/or monolithic integrated optoelectronic devices.

关键词： CdSe flexible devices van der Waals epitaxy molecular beam epitaxy layer lift-off

The effect of Bi composition on the electrical properties of InP1-xBix

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Science China(Physics,Mechanics & Astronomy) 2017年第4期60卷 82-85页

作者： GuanNan Wei Xing Dai Qi Feng WenGang Luo YiYang Li Kai Wang LiYao Zhang wenwu pan ShuMin Wang ShenYuan Yang KaiYou Wang State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China State Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China State Key Laboratory of Functional Materials for lnformatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

III-V Semiconductors containing a small amount of Bi, known as dilute bismides, have attracted great interest in recent years, due to the large band-gap reduction and other unique properties [1,2]. Previous studies have been pri- marily focused on the growth and optical properties of the GaAs-based bismuthides [3], while the properties of other dilute bismides are less well understood. Berding et al. [4] theoretically predicted that InPBi is expected to be an attractive candidate for narrow-gap applications. Experimentally, the InPBi alloy with good single crystal quality has been successfully synthesized recently and exhibits strong and broad photoluminescence at room temperature [5,6]. However, the electric transport characteristics of the InPBi alloy are poorly understood. In this work, we systematically investigate the effect of Bi incorporation on electric transport properties of the InP1-xBix alloys.

关键词： In Bi Ta The effect of Bi composition on the electrical properties of InP x)Bi_x

Band Structure and Optical Gain of InGaAs/GaAsBi Type-Ⅱ Quantum Wells Modeled by the k·p Model

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Chinese Physics Letters 2018年第5期35卷 133-136页

作者： Chang Wang wenwu pan Konstantin Kolokolov Shumin Wang Key Laboratory of Terahertz Solid-State Technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 School of Physical Science and Technology Shanghai Tech University Shanghai 201210 University of Chinese Academy of Sciences Beijing 100190 Faculty of Physics M. V. Lomonosov Moscow State University Moscow 119991 Russia Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg 41296 Sweden

Optical gains of type-Ⅱ In Ga As/Ga As Bi quantum wells（QWs） with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k·p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-Ⅱ QWs are a promising structure for making 1.3 um lasers at room temperature because they can easily be used to obtain 1.3 um for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.

关键词： As Bi In Ga Band Structure and Optical Gain of InGaAs/GaAsBi Type Quantum Wells Modeled by the k p Model

Research of Millimeter-wave Shaped Offset Feed Dual-reflector Antenna

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Research of Millimeter-wave Shaped Offset Feed Dual-reflecto...

95GHz TE03模回旋管内置渐变波导设计

2013年全国天线年会

作者： Chen Xin Yu Chuan Men Fanbao pan wenwu Institute of Applied Electronics CAEP Science and Technology on High Power Microwave Laboratory

shaped scheme based on geometric optics for offset fed dualeflectors antenna is presented. A ray tube emerging from a symmetric feed horn is transformed, after reflections, into a circular beam with a prescribed radial power distribution on the aperture. In the paper, Snell’s law was imposed on the subreflector. Based on this design solution, computer runs were taken for a 1100 mm dish baseline system that the angle between the direction of out beam and X axis and is 20 degrees. Theoretical analysis, numerical simulation and experimental results were carried out. The experiment results show that the antenna has a 78% aperture efficiency and the minor lobe meets a-20 dB criterion and the gain is 59.7 dB at 95 GHz.

关键词： ntenna Shaped Offset Fed Geometric optics aperture efficiency

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强激光与粒子束 2012年第6期24卷 1434-1438页

作者：薛长江潘文武陈世韬中国工程物理研究院应用电子学研究所高功率微波技术重点实验室四川绵阳621900

在耦合波理论的基础上,结合波导渐变曲线给出了普适高阶渐变波导设计方法,研究了95GHz回旋管内置TE03模式改进Dolph-Chebychev渐变波导。采用编制的数值计算程序进行优化,得到了可靠的最优几何参量,设计出了紧凑的95GHz渐变波导。经全... 详细信息

在耦合波理论的基础上,结合波导渐变曲线给出了普适高阶渐变波导设计方法,研究了95GHz回旋管内置TE03模式改进Dolph-Chebychev渐变波导。采用编制的数值计算程序进行优化,得到了可靠的最优几何参量,设计出了紧凑的95GHz渐变波导。经全电磁场仿真验证,该内置渐变输出结构对杂模的抑制达30dB,满足设计要求。回旋管的热测实验中测出的模式样图表明,所设计的内置渐变波导有效地实现了回旋管内径变化。该方法可以高效地指导高阶过模圆波导渐变结构的设计。

关键词：回旋管模式耦合理论改进Dolph-Chebychev渐变波导 TE03模

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地面基站对机载激光雷达精度的影响

强激光与粒子束 2013年第B5期25卷 55-58页

作者：窦延娟何延龙潘文武中国工程物理研究院应用电子学研究所四川绵阳621900 绵阳天眼激光科技有限公司四川绵阳621000

简要叙述了机载激光雷达系统的各个组成部分,并分析了系统的误差因素,在此基础上结合绵成乐城际铁路牵引站线路工程实际数据对不同基站数与机载全球定位系统(GPS)进行差分处理,对得到的飞行航迹的正反算离差值均值、分布图以及照片位置... 详细信息

简要叙述了机载激光雷达系统的各个组成部分,并分析了系统的误差因素,在此基础上结合绵成乐城际铁路牵引站线路工程实际数据对不同基站数与机载全球定位系统(GPS)进行差分处理,对得到的飞行航迹的正反算离差值均值、分布图以及照片位置精度进行详细比较分析,最后得出提高数据精度的地面基站布设方案。

关键词：惯性测量单元(IMU) GPS组合地面基站数 GPS控制网 GPS差分处理

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高压快速离化半导体开关及其脉冲压缩特性

强激光与粒子束 2011年第8期23卷 2141-2144页

作者：梁勤金石小燕潘文武中国工程物理研究院应用电子学研究所四川绵阳621900

介绍了全固态高压快速离化半导体开关(FID)的工作原理和半导体结构,实验研究了在不同外偏置电压下的输出脉冲幅度特性和脉宽压缩特性,并对实验研究结果进行分析。在50Ω负载下,将一输入脉冲幅度1.7kV、脉宽4μs、重频2kHz高压脉冲,通过... 详细信息

介绍了全固态高压快速离化半导体开关(FID)的工作原理和半导体结构,实验研究了在不同外偏置电压下的输出脉冲幅度特性和脉宽压缩特性,并对实验研究结果进行分析。在50Ω负载下,将一输入脉冲幅度1.7kV、脉宽4μs、重频2kHz高压脉冲,通过FID压缩成脉冲幅度1 985V、脉宽90ns、重频2kHz的高压脉冲。

关键词：高压脉冲快速离化器件半导体开关等离子体脉冲压缩

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激光雷达电力巡线点云自动分类方法研究

应用光学 2019年第6期40卷 1077-1083页

作者：游安清潘旭东赵平潘文武中国工程物理研究院高能激光科学与技术重点实验室四川绵阳621900 中国工程物理研究院应用电子学研究所四川绵阳621900

针对机载激光雷达电力巡线的三维点云,设计一种全自动的电线、电塔和地面点云分类方法,为输电系统净空排查提供必需的前提。方法的核心是充分利用激光点云走向的全局统计特征,最大限度减少对局部特征的依赖,以免造成适用局限性。通过国... 详细信息

针对机载激光雷达电力巡线的三维点云,设计一种全自动的电线、电塔和地面点云分类方法,为输电系统净空排查提供必需的前提。方法的核心是充分利用激光点云走向的全局统计特征,最大限度减少对局部特征的依赖,以免造成适用局限性。通过国家电网十几段电力巡线数据的应用测试,显示该方法的自动化程度和普适性都很好,大大减少了以往通过商业软件人工交互式分类的工作量,对同样的数据集和分类结果,处理时间由平均1 h缩短到一两秒钟,大大提高了作业效率和用户体验。

关键词：激光雷达三维点云输电线点云分类

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激光雷达辅助驾驶道路参数计算方法研究

应用光学 2020年第1期41卷 209-213页

作者：游安清潘旭东赵平潘文武中国工程物理研究院高能激光科学与技术重点实验室四川绵阳621900 中国工程物理研究院应用电子学研究所四川绵阳621900

针对特定场景辅助驾驶的需求,构建道路场景车载激光雷达三维扫描系统,并设计基于三维激光点云的道路参数提取与计算方法,包括路面宽度、横杆或桥梁或隧道限高、拐弯半径等等,为辅助判断道路的可通过性提供决策依据。测试和对比实验表明... 详细信息

针对特定场景辅助驾驶的需求,构建道路场景车载激光雷达三维扫描系统,并设计基于三维激光点云的道路参数提取与计算方法,包括路面宽度、横杆或桥梁或隧道限高、拐弯半径等等,为辅助判断道路的可通过性提供决策依据。测试和对比实验表明,所设计算法效果稳定、精度良好,在效率和自动化程度上有一定优势,可为辅助驾驶提供非常有益的决策参数。

关键词：激光雷达三维点云辅助驾驶道路参数