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Thermodynamic equilibrium theory-guided design and synthesis of Mg-doped LiFe_(0.4)Mn_(0.6)PO_(4)/C cathode for lithium-ion batteries

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Journal of Energy Chemistry 2024年第4期91卷 619-627页

作者： Wei Lyu wenlong cai Tuan Wang Xiaobo Sun Enhao Xu Jinxuan Chen Kaipeng Wu Yun Zhang College of Materials Science and Engineering Sichuan UniversityChengdu 610064SichuanChina

Mn-rich LiFe_(1-x)Mn_(x)PO_(4)(x>0.5),which combines the high operation voltage of LiMnPO_(4)with excellent rate performa nce of LiFePO4,is hindered by its sluggish kinetic ***,thermodynamic equilibrium analysis of Mn^(2+)-Fe^(2+)-Mg^(2+)-C_(2)O_(4)^(2-)-H_(2)O system is used to guide the design and preparation of insitu Mg-doped(Fe_(0.4)Mn_(0.6))_(1-x)Mg_(x)C_(2)O_(4)intermediate,which is then employed as an innovative precursor to synthesize high-performance Mg-doped LiFe_(0.4)Mn_(0.6)PO_(4).It indicates that the metal ions with a high precipitation efficiency and the stoichiometric precursors with uniform element distribution can be achieved under the optimized thermodynamic ***,accelerated Li+diffusivity and reduced charge transfer resistance originating from Mg doping are verified by various kinetic *** from the contributions of inherited homogeneous element distribution,small particle size,uniform carbon layer coating,enhanced Li+migration ability and structural stability induced by Mg doping,the Li(Fe_(0.4)Mn_(0.6))_(0.97)Mg_(0.03)PO_(4)/C exhibits splendid electrochemical performance.

关键词： (Fe_(0.4)Mn_(0.6))_(1-x)MgxC_(2)0_(4) precursors Thermodynami cequilibrium Co-precipitation Mg doping Lithium-ion batteries

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一枝春

人民司法 2024年第12期 36-40页

作者：蔡文龙福建省漳州市龙海区人民法院

Bidirectionally polarizing surface chemistry of heteroatom-doped carbon matrix towards fast and longevous lithium-sulfur batteries

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Chinese Chemical Letters 2023年第7期34卷 313-317页

作者： Hongyang Li Bo cai Yingze Song wenlong cai Gaoran Li MIIT Key Laboratory of Advanced Display Materials and Devices College of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing210094China State Key Laboratory of Organic Electronics and Information Displays&Institute of Advanced Materials(IAM) Nanjing University of Posts&TelecommunicationsNanjing210023China State Key Laboratory of Environmental-Friendly Energy Materials School of Materials Science and EngineeringSouthwest University of Science and TechnologyMianyang621010China Department of Advanced Energy Materials College of Materials Science and EngineeringSichuan UniversityChengdu 610064China

Herein, a bidirectional polarization strategy is proposed for hosting efficient and durable lithium-sulfur battery(Li-S) electrochemistry. By co-doping electronegative N and electropositive B in graphene matrix(BNrGO), the bidirectional electron redistribution enables a higher polysulfide affinity over its monodoped counterparts, contributing to strong sulfur immobilization and fast conversion kinetics. As a result,BNrGO as the cathode host matrix realizes excellent cycling stability over 1000 cycles with a minimum capacity fading of 0.027% per cycle, and superb rate capability up to 10 C. Meanwhile, decent areal capacity(6.46 m Ah/cm^(2)) and cyclability(300 cycles) are also achievable under high sulfur loading and limited electrolyte. This work provides instructive insights into the interaction between doping engineering and sulfur electrochemistry for pursuing superior Li-S batteries.

关键词： Lithium-sulfur battery Facile synthesis Heteroatom doping Bidirectional polarization Shuttle effect

Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer

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Science China(Information Sciences) 2022年第4期65卷 251-257页

作者： Luding WANG wenlong cai Kaihua CAO Kewen SHI Bert KOOPMANS Weisheng ZHAO Fert Beijing Institute School of Integrated Circuit Science and Engineering Beihang University Department of Applied Physics Institute for Photonic Integration Eindhoven University of Technology

Perpendicular magnetic tunnel junctions with double-interface free layer(p-DMTJs), which exhibit enhanced tunnel magnetoresistance(TMR) and thermal stability(△) at the nanoscale, have received considerable interest as building blocks for spintronic data storage devices. Heat-assisted magnetic recording(HAMR) techniques have been widely employed in mainstream magnetic storage to enable ultrahigh storage density. However, the data access is achieved by sensing the stray field of the selected magnetic element using a mechanical “read head”, resulting in an unfavorable speed limitation and design complexity. To address this issue, integrating laser-assisted switching with a high-performance magnetic tunnel junction has received interest in spintronic R&D; however, it has not yet been achieved. In this study, we experimentally explored femtosecond(fs) laser-assisted switching in a p-DMTJ device using a direct electrical TMR readout. We demonstrate two reconfigurable switching operations, i.e., binary “write” and unidirectional “reset”, by the interplay of the fs laser and synchronized magnetic field sequence. We further explored the joint effect, and a switching phase diagram was obtained. The effect of the stray field of p-DMTJ, as well as laser helicity,on switching is also discussed. Results show the feasibility of fs laser-assisted writing p-DMTJs, which can pave the way in high-density optospintronic storage applications.

关键词： magnetic tunnel junctions (MTJs) heat-assisted magnetic recording (HAMR) spintronics femtosecond laser thermally-assisted switching (TAS)

Stateful implication logic based on perpendicular magnetic tunnel junctions

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Science China(Information Sciences) 2022年第2期65卷 197-203页

作者： wenlong cai Mengxing WANG Kaihua CAO Huaiwen YANG Shouzhong PENG Huisong LI Weisheng ZHAO Fert Beijing Institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and EngineeringBeihang University Beihang-Goertek Joint Microelectronics Institute Qingdao Research Institute Beihang University

As the conventional von Neumann architecture meets critical limitations of data transfer bandwidth and energy consumption, perpendicular magnetic anisotropy magnetic tunnel junction based processing-in-memory paradigm attracts extensive attention as a promising substitute thanks to its nonvolatility, low-power switching, fast access and infinite endurance. In this work, we propose and experimentally demonstrate a new spintronic implication logic gate that consists of two parallel perpendicular magnetic anisotropy magnetic tunnel junctions with different diameters. Material implication and furthermore NAND logic functions are implemented by all electrically-controlled operations. The reliability of this structure is verified, especially in sub-20 nm node, which shows great potential for large-density processing-in-memory applications.

关键词： perpendicular magnetic anisotropy magnetic tunnel junction implication spin transfer torque spintronic implication logic gate processing-in-memory

Spintronics intelligent devices

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Science China(Physics,Mechanics & Astronomy) 2023年第11期66卷 17-43页

作者： wenlong cai Yan Huang Xueying Zhang Shihong Wang Yuanhao Pan Jialiang Yin Kewen Shi Weisheng Zhao Fert Beijing Institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191China Beihang-Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao266000China

Intelligent computing paradigms have become increasingly important for the efficient processing of massive amounts of ***,using traditional electronic devices to implement these intelligent paradigms is currently mismatched and limited by their energy,area,and ***,which exploits the magnetic and electrical properties of electrons,could break through these limitations and bring new possibilities to electrical *** particular,the tunneling magnetoresistance effect,merging quantum and spintronics,enables spintronic devices to be compatible with standard integrated circuits with a magnetic tunnel junction(MTJ)design,showing great potential for implementing hardware-based intelligent *** this review,we introduce the specific capabilities of MTJs,including nonvolatility,stochasticity,plasticity,and nonlinearity,which are highly favorable in artificial intelligence *** then present how these devices could impact the development of intelligent computing,including in-memory computing,probabilistic computing,and neuromorphic ***,we discuss their challenges and perspectives in intelligent hardware implementations.

关键词： tunneling magnetoresistance effect magnetic tunnel junction in-memory computing probabilistic computing neuromorphic computing

Ethylene glycol-regulated ammonium vanadate with stable layered structure and favorable interplanar spacing as high-performance cathode for aqueous zinc ion batteries

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中国化学快报:英文版 2023年第8期34卷 508-512页

作者： Chao Lu Zhi Yang Yujie Wang Yun Zhang Hao Wu Yi Guo wenlong cai School of Mechanical Engineering Chengdu UniversityChengdu 610106China Department of Chemistry College of Resource and EnvironmentBaoshan UniversityBaoshan 678000China College of Materials Science and Engineering Sichuan UniversityChengdu 610064China College of Optoelectronic Engineering Chengdu University of Information TechnologyChengdu 610225China

Ammonium vanadate compounds featuring large capacity,superior rate capability and light weight are regarded as promising cathode materials for aqueous zinc ion batteries(AZIBs).However,the controllable synthesis of desired ammonium vanadates remains a ***,various ammonium vanadate compounds were successfully prepared by taking advantage of ethylene glycol(EG)regulated polyolreduction strategy and solvent effect via hydrothermal *** morphology and crystalline phase of resultant products show an evolution from dendritic(NH_(4))_(2)V_(6)O_(16)to rod-like NH_(4)V_(4)O_(10)and finally to lamellar(NH4)2V4O9 as increasing the amount of ***,the NH_(4)V_(4)O_(10)product exhibits a high initial capacity of 427.5 mAh/g at 0.1 A/g and stable cycling with a capacity retention of 90.4%after 5000 cycles at 10 A/*** relatively excellent electrochemical performances of NH_(4)V_(4)O_(10)can be ascribed to the stable open-framework layered structure,favorable(001)interplanar spacing,and peculiar rod-like morphology,which are beneficial to the highly reversible Zn^(2+)storage *** work offers a unique way for the rational design of high-performance cathode materials for AZIBs.

关键词： Ammonium vanadate rods Ethylene glycol reduction Zn^(2+)storage Cathode Aqueous zinc ion battery

In-situ formation of Li_(0.5)Mn_(0.5)O coating layer through defect controlling for high performance Li-rich manganese-based cathode material

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Journal of Energy Chemistry 2022年第8期31卷 384-391,I0010页

作者： Aipeng Zhu Qin Wang Yin Zhang Yueyin Zhang Xiaogang He Kaipeng Wu Hao Wu Qian Wang wenlong cai Yun Zhang Department of Advanced Energy Materials College of Materials Science and EngineeringSichuan UniversityChengdu 610064SichuanChina Engineering Research Center of Alternative Energy Materials&Devices Ministry of EducationSichuan UniversityChengdu 610064SichuanChina

Li-rich layered oxide of Li_(1.2)Mn_(0.6)Ni_(0.2)O_(2)(LMNO)with a considerable specific capacity and higher voltage is regarded as a kind of promising cathode ***,it suffers from transition metal ion dissolution and oxygen escape that leads to rapid capacity *** addition,the poor lithium-ion diffusion kinetics gives rise to unsatisfied rate ***,a stable layer of Li_(0.5)Mn_(0.5)O(LMO)out of LMNO is in-situ constructed through acetic passivation and following calcination *** generated defect structure in the composite material exhibits fast ion diffusion kinetics and the produced LMO layer can stabilize the substructure,resulting in elevated cycling stability and rate *** specific,the LMNO@LMO material exhibits a high initial coulombic efficiency of 80.3%and remarkable capacity retention of 80.7%after 200 cycles at 1 ***,the composite material reveals prominent rate performance that delivers discharge capacities of 158 and 131 m Ah g^(-1) at 5 and 10 C,*** last,this study presents a new approach to optimizing the Li-rich cathode materials.

关键词： Defect Interfacial stability Li_(0.5)Mn_(0.5)O Li-rich layered oxides Lithium-ion batteries

Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction

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Science China(Physics,Mechanics & Astronomy) 2022年第10期65卷 109-114页

作者： Yudong Zhuo wenlong cai Daoqian Zhu Hongchao Zhang Ao Du Kaihua Cao Jialiang Yin Yan Huang Kewen Shi Weisheng Zhao Fert Beijing Institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China Beihang-Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao 266000China

The current-induced spin-orbit torque(SOT) is one of the most promising ways for high speed and low power spintronics devices. However, the mechanism of SOT driven magnetization reversal, especially the role of the field-like torque(FLT), is still unclear. Here, we report the observed promotion and suppression of switching by FLT, which depends on the relative direction of FLT and spin polarization. Our results reveal that the FLT could modulate the switching speed and power consumption by affecting the work done by the damping-like torque, and leads two different reversal dynamical paths during the ***, the origin of incubation time in SOT induced switching is clarified simultaneously.

关键词： spin-orbit torque field-like torque magnetization reversal magnetic tunnel junction