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Detector-integrated vertical-cavity surfaceemitting laser with a movable high-contrast grating mirror

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Photonics Research 2024年第7期12卷 1437-1448页

作者： MINGLU WANG HONGLING PENG CHENXI HAO XUYAN ZHOU wanhua zheng ANJIN LIU Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Solid-State Optoelectronics Information Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In this paper, we present a detector-integrated vertical-cavity surface-emitting laser(VCSEL) with a movable high-contrast grating(HCG) mirror in an n-i-p-i-n manner. The detector-integrated VCSEL with a movable HCG can achieve three functions, including wavelength tuning, power monitoring, and resonant-cavity-enhanced(RCE)photon detection. Currently, the device can achieve a wavelength tuning range of 27 nm at room temperature when the suspended HCG is driven by the reverse-bias voltage. The n-i-p structure located at the upper part of the device can serve as an intra-cavity photodiode to monitor the output power due to the defect absorption. The RCE photon detection function of the detector-integrated VCSEL with a movable HCG is measured, and it has a peak responsivity at about 926 nm. This detector-integrated VCSEL with a movable HCG will be useful for sensing and imaging.

关键词： tuning laser cavity

Observation of maximal intrinsic chirality empowered by dual quasi-bound states in the continuum in a planar metasurface

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Photonics Research 2024年第2期12卷 244-252页

作者： XIN QI JIAJU WU FENG WU SONG ZHAO CHAO WU YUEYANG MIN MINA REN YUFEI WANG HAITAO JIANG YUNHUI LI ZHIWEI GUO YAPING YANG wanhua zheng HONG CHEN YONG SUN MOE Key Laboratory of Advanced Micro-Structured Materials School of Physics Science and EngineeringTongji UniversityShanghai 200092China School of Optoelectronic Engineering Guangdong Polytechnic Normal UniversityGuangzhou 510665China l3 Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology School of Physics Science and EngineeringTongji UniversityShanghai 200092China Department of Electrical Engineering Tongji UniversityShanghai 201804China State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Metasurfaces with spin-selective transmission play an increasingly critical role in realizing optical chiral responses,especially for strong intrinsic chirality,which is limited to complex three-dimensional *** this paper,we propose a planar metasurface capable of generating maximal intrinsic chirality and achieving dual-band spinselective transmission utilizing dual quasi-bound states in the continuum(quasi-BICs)caused by the structural symmetry ***,the value of circular dichroism(CD)and the transmittance of two kinds of circular polarization states can be arbitrarily controlled by tuning the asymmetry *** CD approaching unity with the maximum transmittance up to 0.95 is experimentally achieved in the dual ***,assisted by chiral BICs,the application in polarization multiplexed near-field image display is also *** work provides a new avenue to flexibly control intrinsic chirality in planar structure and offers an alternative strategy to develop chiral sensing,multiband spin-selective transmission,and high-performance circularly polarized wave *** basic principle and design method of our experiments in the microwave regime can be extended to other bands,such as the terahertz and infrared wavelengths.

关键词： planar intrinsic quasi

Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

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Chinese Optics Letters 2024年第1期22卷 123-127页

作者：曹澎王天财彭红玲李占国 Qiandong Zhuang 郑婉华 Laboratory of Solid-State Optoelectronics Information Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China College of Electronic and Communication Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Physics Changchun Normal UniversityChangchun 130022China Physics Department Lancaster UniversityLancaster LA14YBUK

In this paper,we demonstrate nBn InAs/InAsSb type II superlattice(T2SL)photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared(MWIR)*** improve operating temperature and suppress dark current,a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO_(2) *** result in ultralow dark current density of 6.28×10^(-6)A/cm^(2)and 0.31 A/cm^(2)under-600 mV at 97 K and297 K,respectively,which is lower than most reported InAs/InAsSb-based MWIR *** resistance area product values of 3.20×10^(4)Ω·cm^(2)and 1.32Ω·cm^(2)were obtained at 97 K and 297 K.A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5μm and a peak detectivity of 2.1×10^(9)cm·Hz^(1/2)/W were obtained at a high operating temperature up to 237 K.

关键词： mid-wavelength infrared photodetector InAs/InAsSb superlattice high operating temperature dark current

Semiconductor photonic crystal laser

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Chinese Physics B 2018年第11期27卷 167-175页

作者： wanhua zheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Laboratory of Solid State Optoelectronics Information Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Future Technology University of Chinese Academy of SciencesBeijing 100049China

By combing artificial micro–nano structures,photonic crystals(PCs),with traditional semiconductor laser material to realize the dynamic collaborative control of photonic states and confined electrons,the band engineering of the PC has been *** brings new development space for the semiconductor laser,such as for low threshold and high *** on a series of works by zheng's group,this paper has reviewed kinds of PC lasers including electrical injection PC vertical cavity and lateral cavity surface-emitting lasers,and PC high beam quality lasers,to show that the PC is vital for promoting the continuous improvement of semiconductor laser performance at present and in the future.

关键词： semiconductor laser photonic crystal complex cavity

Polarization full feedback external cavity of open loop spectral beam combining based on multi-single emitters laser diode

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Chinese Optics Letters 2024年第5期22卷 80-84页

作者：胡满张伟桥曹澎李彤彤周旭彦郑婉华 Laboratory of Solid-State Optoelectronics Information Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Weifang Academy of Advanced Opto-Electronic Circuits Weifang 261071China State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Future Technology University of Chinese Academy of SciencesBeijing 101408China

In this paper,a spectral beam combining(SBC)structure of multi-single emitters laser diode based on a polarization full feedback(PFF)external cavity is proposed and *** maximum combining efficiency is 75.6%,which leads to an output power of 38.48 W,a degree of polarization(DOP)of 99.42%,and electro-optical conversion efficiency of 35.63%under continuous wave operation at a current of 8 *** to the conventional SBC,the output power,the combining efficiency,the electro-optical conversion efficiency,and the DOP of the PFF-SBC structure present improvements of 5.73 W,11.26 percentage points,5.3 percentage points,and 7.26 percentage points,*** results show that this SBC method can achieve a high efficiency and linearly polarized laser output of SBC,thereby making the subsequent polarization beam-combining efficiency approach the limit.

关键词： diode laser spectral beam combining high efficiency degree of polarization external cavity feedback

Nr4a3对乳腺癌细胞增殖、凋亡及侵袭的影响

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广西师范大学学报（自然科学版） 2024年第3期42卷 189-197页

作者：郑婉华莫斯萍周祖平蒲仕明广西师范大学生命科学学院广西桂林541006 广西高校干细胞与医药生物技术重点实验室(广西师范大学) 广西桂林541004 广西师范大学生物医学研究中心广西桂林541004

Nr4a3(nuclear receptor subfamily 4 group a member 3)属于核受体亚家族成员,参与细胞增殖、细胞迁移和细胞凋亡的调控。据报道,Nr4a3在多种肿瘤组织中表达下调。为探索Nr4a3在乳腺癌发生、发展中的作用,本文利用公共数据库分析NR4A3... 详细信息

Nr4a3(nuclear receptor subfamily 4 group a member 3)属于核受体亚家族成员,参与细胞增殖、细胞迁移和细胞凋亡的调控。据报道,Nr4a3在多种肿瘤组织中表达下调。为探索Nr4a3在乳腺癌发生、发展中的作用,本文利用公共数据库分析NR4A3在乳腺癌组织中的表达以及与乳腺癌患者总生存率的关系。在4T1细胞系上敲除Nr4a3基因,通过流式细胞术等检测细胞凋亡、细胞周期;CCK-8与集落形成实验检测细胞活力;细胞划痕与侵袭检测细胞迁移与侵袭能力;通过q-PCR检测细胞周期和凋亡基因的表达水平。结果表明:Nr4a3在乳腺癌组织中表达水平显著下调;与乳腺癌患者的总生存率呈正相关关系;Nr4a3敲除后,细胞增殖增强,细胞凋亡减少及细胞迁移能力和侵袭能力增强。本研究揭示了Nr4a3在乳腺癌细胞增殖、凋亡、迁移和侵袭的潜在作用,可能成为乳腺癌潜在的治疗靶点。

关键词： Nr4a3 乳腺癌细胞凋亡免疫治疗

Demonstration of electrically injected vertical-cavity surface-emitting lasers with post-supported high-contrast gratings

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Photonics Research 2022年第5期10卷 1170-1176页

作者： JING ZHANG CHENXI HAO wanhua zheng DIETER BIMBERG ANJIN LIU State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Solid-State Optoelectronics Information Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Bimberg Chinese-German Center for Green Photonics Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Institute of Solid State Physics and Center of Nanophotonics Technische Universitat Berlin10623 BerlinGermany

We experimentally demonstrate for the first time to our knowledge electrically injected vertical-cavity surfaceemitting lasers(VCSELs) with post-supported high-contrast gratings(HCGs) at 940 nm. The HCG-VCSELs have two posts to support the air-suspended HCGs, which are realized by simple fabrication without critical point drying. The HCG-VCSEL achieves a threshold current of about 0.65 m A and a side-mode suppression ratio of 43.6 d B under continuous-wave operation at 25℃. Theoretically the HCG-VCSEL with a λ∕2-cavity for the transverse magnetic polarization has a smaller effective mode length of 1.38 ·(λ∕n). Thus, the relaxation resonance frequency can be increased by 16% compared with that of the conventional VCSEL. The modulation speed of 100 Gbit/s for the HCG-VCSEL is expected in the on–off keying modulation format. Our easy design of HCGVCSELs has great potential for applications in optical interconnects, sensing, illumination, and so on.

关键词： polarization cavity surface

Improvement on the topological localized interface enabled by chiral symmetry

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Photonics Research 2023年第9期11卷 1517-1523页

作者： JINGXUAN CHEN MINGJIN WANG TING FU YUFEI WANG XUEYOU WANG YINGQIU DAI ZIYUAN LIAO HAIYANG JI wanhua zheng Laboratory of Solid State Optoelectronics Information Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Future Technology University of Chinese Academy of SciencesBeijing 101408China Weifang Academy of Advanced Opto-Electronic Circuits Weifang 261021China

Zero-energy topological states,which are protected by chiral symmetry against certain perturbations topologically,localize at interfaces between trivial and non-trivial phases in the Su–Schrieffer–Heeger(SSH)chain ***,we propose and demonstrate a method to manipulate chiral symmetry itself to improve the localized interfaces and enlarge the mode volume of topological states in the SSH model,thus optimizing the lasing performance of localized *** multiple defects corresponding to off-diagonal perturbations in an eigenmatrix are introduced,the topological state expands and extends to extra defects at the topological interface without breaking chiral *** apply the proposed method in electrical pumping semiconductor laser arrays to verify our theoretical prediction and optimize the output characteristics of the *** measured results of the proposed multi-defect SSH laser array show that the output power has been increased by 27%,and the series resistance and far-field divergence have been reduced by half compared to the traditional SSH laser array,establishing a high-performance light source for integrated silicon photonics,infrared light detection and ranging,and so *** work demonstrates that the proposed method is capable of improving topological localized interfaces and redistributing zero-energy topological ***,our method can be applied to other platforms and inspire optimizations of more devices in broader areas.

关键词： pumping symmetry interface

TUNABLE HIGH-POWER BaB_(2)O_(4) OPTICAL PARAMETRIC OSCILLATOR PUMPED AT 355nm

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Chinese Physics Letters 1990年第9期7卷 394-397页

作者： XU Zuyan DENG Daoqun WANG Yunping zheng wanhua LIU Xiang WU Baichang CHEN Chuangtian Institute of Physics Academia SinicaBeijing 100080 Fujian Institute of the Structure of Matter Academia SinicaFuzhou 350002

We report the operation of aβ-BaB_(2)O_(4)(BBO)optical parametric oscillator(OPO)broadly tunable in the visible and the near *** efficiency of 22.7%for the signal and 34.1%for the idler corresponding to the total energy conversion efficiency of 25.9%has been *** maximum average output power and the maximum output energy reached 220m W and 22rnJ/pulse,*** changing the matching angle of the OPO,the output wavelength was continuously scanned throughout 425-2144nm.

关键词： OPO tunable oscillator