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Improvements on radiation-hardened performance of static induction transistor

Science china(information Sciences) 2010年第5期53卷 1089-1096页

作者： wang yongshun 1 , luo xianliang 1 , li hairong 2 , wang ziting 1 , wu rong 1 , zhang caizhen 2 & li siyuan 2 1 school of electronic and information engineering, lanzhou jiaotong university, lanzhou 73.070, china 2 Institute of Microelectronics, school of Physical Science and Technology, lanzhou university, lanzhou 730000, china school of electronic and information engineering Lanzhou Jiaotong University Lanzhou China Institute of Microelectronics School of Physical Science and Technology Lanzhou University Lanzhou China

The radiation-hardened performances of static induction transistor (SIT) have been studied in depth in this paper. The effects of radiation of electron beam on the I-V characteristics, carrier distribution and potential distribution in the channel of SIT have been represented. A large number of electron-hole pairs are generated in the depletion region of reversely biased gate-channel PN junction. The radiation-generated electrons drift towards the drain region at high positive potential, while generated holes flow into gate region biased to the lowest potential. With the accumulation of holes in gate region, the gate potential is boosted, resulting in a decrease in the height of potential barrier in channel, and an increase in drain current. I-V characteristics of SIT in the presence of radiation have been theoretically derived, and compared with experimental results. With the increase in thickness of epitaxial layer, the radiation-hardened capability of SIT is continuously improved until the optimum thickness of 26 μm is reached. The optimum matching relationship among geometric, material and technological parameters has been represented to acquire excellent radiation-hardened performances of SIT.

关键词： static induction transistor radiation-resistant potential barrier electron beam radiationgenerated carriers

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