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Science china(Information Sciences) 2011年第5期54卷 915-935页

作者： wang yangyuan institute of microelectronics, peking university, beijing 100871, china institute of microelectronics Peking University Beijing China

With the development of information technology, integrated circuits (IC) and system which target high performance and low power consumption have widely penetrated to all the aspects of national economy, national defense construction and people’s life. With the continuous increase in IC integration density, the power consumption is becoming the limiting factor. It turns out that the driving force of the future IC and system development is the reduction of the power consumption and improvement of the performance/power ratio. The Moore’s Law is inherently the law for the technology and economic development, and has served as the guideline of the IC development for half a century. However, with the scaling down of IC feature size and the corresponding increased integration density, it is progressively approaching the physical limitation. Moore’s Law will gradually complete its historic mission and it will be replaced by a law of reducing the power consumption while ensuring the performance requirements for IC, SoC and SiP performance, law of improving the performance/power ratio. This paper will discuss the related research topics on Green micro/nanoelectronics, including low-power design, novel low-power devices, manufacturing processes for low power applications and related micro/nano electromechanical systems.

关键词： power consumption IC technology

A novel voltage-type sense amplifier for low-power nonvolatile memories

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Science china(Information Sciences) 2010年第8期53卷 1676-1681页

作者： LI Ming , KANG JinFeng & wang yangyuan institute of microelectronics, peking university, beijing 100871, china institute of microelectronics Peking University Beijing China

Based on the requirements of the nonvolatile memories embedded in ultra low-power RFID transponders, a novel voltage-type sense amplifier is designed to achieve both the reduced reading power and the improved reliability. Compared to the conventional voltage-type sense amplifier, the additional capacitor and current limiter are introduced in the novel voltage-type sense amplifier to reduce the reading power and to improve the reading reliability. The simulations show that the reading power and reliability of our voltage-type sense amplifier are superior to the previously reported voltage-type sense amplifier without speed loss but with only a little increased area. A testing chip has been fabricated based on 0.18 μm EEPROM technology to verify the design. The novel voltage-type sense amplifier can be implemented to the low-power nonvolatile memory embedded in RFID transponder.

关键词： sense amplifier nonvolatile memory transponder low-power

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics

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Science china(Information Sciences) 2011年第12期54卷 2693-2699页

作者： HE YanDong , ZHANG Xing & wang yangyuan institute of microelectronics, peking university, beijing 100871, china institute of microelectronics Peking University Beijing China

The gate leakage current and reliability concern become more serious due to the aggressive scaling-down of the gate oxide thickness. Developing advanced gate dielectrics process for mass production is essential in china. In this paper, the gate leakage current reduction and reliability optimization for plasma nitridation SiON aimed at 65 nm node CMOS application was explored. A three-step fabrication process based on single wafer tools for plasma nitridation SiON has been demonstrated. The effects of each process condition on the electrical and reliability characteristics of plasma nitridation SiON have been investigated in terms of nitrogen concentration, equivalent oxide thickness(EOT), gate leakage current, mobility, time-dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). The optimized plasma nitrided oxide demonstrated good gate leakage reduction and high carrier mobility without sacrificing the reliability performance. This optimized plasma nitridation process has been implemented into the mass production to meet the throughput and reliability requirement.

关键词： plasma nitridation post-nitridation annealing gate leakage current NBTI TDDB

A Novel Technique of Silicon-on-Nothing MOSFETs Fabrication by Hydrogen and Helium Co-implantation

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A Novel Technique of Silicon-on-Nothing MOSFETs Fabrication ...

An Improved Analytical Model for Minority Carrier Transport in Quasi-Neutral Semiconductor Regions

2004 7th International Conference on Solid-State and Integrated Circuits Technology（ICSICT 2004）

作者： Weihai Bu,Ru Huang~*,Ming Li,Yu Tian,and yangyuan wang institute of microelectronics,peking university,beijing 100871,china

In this paper a novel technique of Silicon-on-Nothing (SON) MOSFETs fabrication by H

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Journal of Semiconductors 1998年第3期 3-5页

作者： Ma Pingxi, Zhang Lichun, Zhao Baoying and wang yangyuan(institute of microelectronics, peking university, beijing 100871)

１ＩｎｔｒｏｄｕｃｔｉｏｎＡｓｕｃｃｅｓｉｖｅｓｃａｌｉｎｇｄｏｗｎｏｆｆｅａｔｕｒｅｐｒｏｃｅｓｓｉｎｇｄｉｍｅｎｓｉｏｎｈａｓｇｉｖｅｎｒｉｓｅｔｏａｓｅｒｉａｌｏｆｖａｒｉａｔｉｏｎｓｉｎｍａｎｕｆａｃｔｕｒｉ... 详细信息

１ＩｎｔｒｏｄｕｃｔｉｏｎＡｓｕｃｃｅｓｉｖｅｓｃａｌｉｎｇｄｏｗｎｏｆｆｅａｔｕｒｅｐｒｏｃｅｓｓｉｎｇｄｉｍｅｎｓｉｏｎｈａｓｇｉｖｅｎｒｉｓｅｔｏａｓｅｒｉａｌｏｆｖａｒｉａｔｉｏｎｓｉｎｍａｎｕｆａｃｔｕｒｉｎｇｔｅｃｈｎｏｌｏｇｉｅｓ［１］...

关键词： An Improved Analytical Model for Minority Carrier Transport in Quasi-Neutral Semiconductor Regions

Kinetic characteristics of continuous flow polymerase chain reaction chip: A numerical investigation

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Science china(Technological Sciences) 2010年第7期53卷 1967-1972页

作者： wang ShiYing1 & wang Wei2,3 1 School of Physics, peking university, beijing 100871, china 2 institute of microelectronics, peking university, beijing 100871, china 3 National Key Laboratory of Science and Technology on Micro/Nano Fabrication, beijing 100871, china School of Physics Peking University Beijing China institute of microelectronics Peking University Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China

Continuous flow PCR (polymerase chain reaction) chip holds impressive advantages compared to micro chamber PCR chip. In order to have better understanding of kinetic characteristics of continuous flow PCR chip, a comprehensive mathematical model is presented in this paper, including melting, annealing and extension phases of a typical PCR process which has the essence of a convection-diffusion-reaction system. Using this model, we can simulate the PCR process in series of reaction cycles. Numerical results show that the average sample velocity plays a significant role in affecting the amplification efficiency. Also, appropriate combination of the PCR mixture is important for high-quality DNA amplification. Giving a large initial DNA concentration range, the continuous flow PCR scheme holds excellent real-time detection ability theoretically. The present numerical model bridges the temperature distribution to the real DNA amplification, and thereby is able to successfully predict continuous flow PCR properties which are important for the chip design.

关键词： continuous flow PCR chip numerical simulation convection-diffusion-reaction system

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Theory and verification of operator design methodology

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Science china(Information Sciences) 2012年第2期55卷 480-490页

作者： HU ZiYi1,ZHAO Yong1,wang XinAn1,HUANG Ru2,wang Teng1 & ZHANG Xing2 1Key Lab of Integrated Microsystem Science and Engineering Applications,peking university Shenzhen Graduate School,Shenzhen 518055,china 2institute of microelectronics,peking university,beijing 100871,china Key Lab of Integrated Microsystem Science and Engineering Applications Peking University Shenzhen Graduate School Shenzhen China institute of microelectronics Peking University Beijing China

Non-recurring-engineering(NRE)and time-to-market play an increasingly important role in the field of IC ***,with the continuous development of IC manufacturing technology,it is necessary to propose a novel design methodology to shorten design cycle and enhance design *** this paper,operator design methodology(ODM)is presented and an H.264 encoder is implemented as a *** to the flow of ODM,the register transfer level(RTL)design of H.264 encoder has been accomplished with 15 man-months,which is lower than the average 19 man-months in the field of traditional application specific integrated circuit(ASIC)***,with the advantage of operator design library,the design has a comparable performance with other ASIC *** obtained design can support a real-time video encoding of 720p at 60 frames per second or 1080p at 30 frames per second,working at 167 MHz with SMIC 0.13 μm CMOS *** results provide good evidence for the practicability and efficiency of ODM.

关键词： operator design methodology H.264 encoder integrated circuit hardware

Fabrication and characteristics of ZnO MOS capacitors with high-K HfO_2 gate dielectrics

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Science china(Technological Sciences) 2010年第9期53卷 2333-2336页

作者： HAN DeDong,wang Yi,ZHANG ShengDong,SUN Lei,KANG JinFeng,LIU XiaoYan,DU Gang,LIU LiFeng & HAN RuQi institute of microelectronics,peking university,beijing 100871,china institute of microelectronics Peking University Beijing China

ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room *** high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) *** temperature to fabricate ZnO MOS capacitors is 400°C,and the low temperature process is applicable for thin film transistors,flat-panel display (FPD),flexible display,*** electronic availability of ZnO thin films,which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is *** frequency (1 MHz) capacitance-voltage (C-V) and current-voltage (I-V) characteristics of ZnO-based MOS capacitors are *** thermal stability and electronic stability of the ZnO capacitors are investigated,*** results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate ***,the ZnO capacitors can exhibit high thermal and electronic stabilities.

关键词： ZnO high-K HfO2 low temperature process

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Hybrid microsystem with functionalized silicon substrate and PDMS sample operating microchannel: A reconfigurable microfluidics scheme

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Science china(Technological Sciences) 2010年第8期53卷 2272-2277页

作者： LEI YinHua 1 ,XIE Fei 1 ,wang Wei 1,2 ,wang HaiBin 3 &LI ZhiHong 1,2 1 institute of microelectronics,peking university,beijing 100871,china 2National Key Laboratory of Science and Technology on Micro/Nano Fabrication,beijing 100871,china 3 No.302 Hospital,beijing 100039,china institute of microelectronics Peking University Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China No. 302 Hospital Beijing China

A hybrid microsystem with separately functioned temperature controlling substrate and sample operating fluidic microchannel was developed to demonstrate a reconfigurable microfluidics *** temperature controlling substrate integrated a micro heater and a temperature sensor by using traditional silicon-based micromechanical system(MEMS)technique,which guaranteed high performance and robust reliability for repeatable *** sample operating fluidic microchannel was prepared by poly-(dimethylsiloxane) (PDMS)based soft lithography technique,which made it cheap enough for disposable *** PDMS microchannel chip was attached to the temperature controlling substrate for reconfigurable thermal applications.A thin PDMS film was used to seal the microchannel and bridge the functionalized substrate and the sample inside the channel,which facilitated heat transferring and prevented sample contaminating the temperature controlling *** by a one dimensional thermal resistance model,the thin PDMS film was important for the present reconfiguration *** performance of this hybrid microsystem was examined,and the experimental results demonstrated that the chip system could work stably over hours with temperature variation less than *** PDMS microchannel chips were tested on one heating substrate sequentially with a maximum intra-chip temperature difference of *** extracted from serum of a chronic hepatitis B virus(HBV)patient was amplified by this hybrid microsystem and the gel electrophoresis result indicated that the present reconfigurable microfluidic scheme worked successfully.

关键词： reconfigurable microfluidics hybrid microdevice thin PDMS film

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PDMS prism-glass optical coupling for surface plasmon resonance sensors based on MEMS technology

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Science china(Information Sciences) 2010年第10期53卷 2144-2158页

作者： GENG ZhaoXin 1,2 , LI Qing 3 , wang Wei 1 & LI ZhiHong 1 1 institute of microelectronics, peking university, beijing 100871, china 2 School of Information engineering, Minzu university of china, beijing 100081, china 3 School of Sciences, Changchun university of Science and Technology, Changchun 130000, china institute of microelectronics Peking University Beijing China School of Information engineering Minzu University of China Beijing China School of Sciences Changchun University of Science and Technology Changchun China

A miniaturized surface plasmon resonance (SPR) chip has been developed for biomedical and chem-ical analysis with low cost and high performance. The techniques of bulk silicon micromachining and polymer replication were used to fabricate the Kretschmann SPR sensor composed of a Polydimethylsiloxane (PDMS) prism, a coupling glass and microchannels. The plasmon properties of thin metal films were investigated theoret-ically based on Fresnel analysis, with optical boundary conditions pertaining to the surface plasmon resonance at the gold/water and gold/air interfaces. The theoretical results show that difference in the refractive index (RI) between the PDMS prism and the coupling glass layer affect the precision of the SPR angle and the SPR curve. Meanwhile, the period of the interference fringe attaching on the SPR curve increases with an increase in wavelength and a decrease in the refractive index of the coupling glass layer. The gold thickness of 50 nm is required while employing a fixed incident wavelength of 650 nm, to achieve optimum SPR excitation conditions and the sensor sensitivity. The characteristics of this SPR sensor were evaluated in the angular interrogation mode of employing the incident wavelength of 650 nm in air and water media, respectively. The obtained SPR angles were approximately consistent with the theoretical ones.

关键词： surface plasmon resolance polymer microfluidic PDMS