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Impulse-Coupling Coefficient of Laser-Surface Interaction in Air

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Chinese Physics Letters 1994年第4期11卷 250-252页

作者： MEI Liangmo XIA Yueyuan wang Qingpu XU Bingzhang TAN Chunyu ZHAO Shengzhi wang xiangtai wang Gongtang Department of Physics Shandong UniversityJinan 250100 Department of Physics Shandong Normal UniversityJinan 250002

Impulse-copling coefficients,for A1 and Cu samples with finite surface area irradiated in air by 1.06μm,10ns laser pulses produced by a Nd:YAG laser,have been measured experimentally.A modified theoretical model of impulse-coupling is proposed,which significantly improves the agreement between the calculated impulse-coupling coefficient and the measured one.

关键词： Nd:YAG 1.06μm laser

The Ambient Gas Effects on Pulsed Laser Ablation of Target

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光电子·激光 1996年第1期7卷 12-15页

作者： Gongtang wang xiangtai wang Baoyuan Mian(Department of physics,Shandong Normal University,Jinan 250014)Bingzhang Xu Liangmo Mei(Department of physics.Shandong University,Jinan 250100) 山东师范大学物理系山东济南山东大学物理系山东济南

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关键词： Al￣+ ion mean projected range laser ablation ambient gas effect.

10 × 10 Ga_(2)O_(3)-based solar-blind UV detector array and imaging characteristic

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Journal of Semiconductors 2024年第9期45卷 61-69页

作者： Haifeng Chen Zhanhang Liu Yixin Zhang Feilong Jia Chenlu Wu Qin Lu xiangtai Liu Shaoqing wang Key Laboratory of Advanced Semiconductor Devices and Materials School of Electronic EngineeringXi’an University of Posts andT elecom-municationsXi’an 710121China

A 10 × 10 solar-blind ultraviolet(UV) imaging array with double-layer wire structure was prepared based on Ga_(2)O_(3) film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-todark current ratio(PDCR) of 5.5 × 10^(5), responsivity(R) of 4.28 A/W, external quantum efficiency(EQE) of 2.1 × 10^(3)%, detectivity(D*) of 1.5 × 10^(14) Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 ℃, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga_(2)O_(3) solarblind UV detectors.

关键词： Ga_(2)O_(3) solar-blind ultraviolet photodetector array photo-to-dark current ratio

Preparation and characteristic study of Schottky diodes based on Ga_(2)O_(3)thin films

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The Journal of China Universities of Posts and Telecommunications 2024年第2期31卷 28-37页

作者： Zhang Xuhui Chen Haifeng Liu xiangtai Lu Qin wang Zhan Cheng Hang Che Lujie Guan Youyou Han Xiaocong School of Electronic Engineering Xi'an University of Posts and TelecommunicationsXi'an 710121China

This study uses atomic layer deposition(ALD)to grow Ga_(2)O_(3)films on SiO_(2)substrates and investigates the influence of film thickness and annealing temperature on film *** diode devices are fabricated based on the grown Ga_(2)O_(3)films,and the effects of annealing temperature,electrode size,and electrode spacing on the electrical characteristics of the devices are *** results show that as the film thickness increases,the breakdown voltage of the fabricated devices also increases.A Schottky diode with a thickness of 240 nm can achieve a reverse breakdown voltage of 300 *** film quality significantly improves as the annealing temperature of the film *** a voltage of 5 V,the current of the film annealed at 900℃is 64 times that of the film annealed at 700℃.The optimum annealing temperature for Ohmic contact electrodes is 450℃.At 550℃,the Ohmic contact metal tends to burn,and the performance of the device is *** the electrode spacing increases the forward current of the device but decreases the reverse breakdown *** the Schottky contact electrode size increases the forward current,but the change is not significant,and there is no significant change in the reverse breakdown *** device also performs well at high temperatures,with a reverse breakdown voltage of 220 V at 125℃.

关键词： atomic layer deposition(ALD) Ga_(2)O_(3)film Schottky diode annealing temperature

Low Threshold and High Efficiency Nd:S-VAP Laser

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Chinese Physics Letters 1995年第6期12卷 355-357页

作者： ZHAO Shengzhi wang Qingpu ZHANG Xingyu wang Xiaojie wang xiangtai SUN Lianke ZHANG Shaojun Department of Optics Shandong UniversityJi'nan 250100 Department of Physics Shandong Normal UniversityJi'nan 250002 Institute of Crystal Materials Shandong UniversityJi'nan 250100

The absorption spectrum of a new sort of crystal Nd:S-VAP was measured,which showed that Nd:S-VAP can be appropriately pumped at 583.0 and *** using tunable dye-laser(570.0-600.0nm)as pumping light,the performance of low threshold and high efficiency Nd:S-VAP laser has been *** characteristics of the output laser,such as 1.5nm linewidth,5 ns pulse width,almost total polarity,up to 50% conversion efficiency,down to 2mJ threshold energy and so on,were ***,the prospect of Nd:S-VAP crystal for low threshold,high efficiency miniature laser was discussed.

关键词： Nd Efficiency pumped

Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

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Journal of Semiconductors 2024年第5期45卷 90-98页

作者： Haifeng Chen Xiaocong Han Chenlu Wu Zhanhang Liu Shaoqing wang xiangtai Liu Qin Lu Yifan Jia Zhan wang Yunhe Guan Lijun Li Yue Hao Key Laboratory of Advanced Semiconductor Devices and Materials School of Electronic EngineeringXi’an University of Posts andT elecommunicationsXi’an 710121China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

High qualityβ-Ga_(2)O_(3)single crystal nanobelts with length of 2−3 mm and width from tens of microns to 132μm were synthesized by carbothermal reduction *** on the grown nanobelt with the length of 600μm,the dual-Schottky-junctions coupling device(DSCD)was *** to the electrically floating Ga_(2)O_(3)nanobelt region coupling with the double Schottky-junctions,the current I_(S2)increases firstly and rapidly reaches into saturation as increase the voltage V_(S2).The saturation current is about 10 pA,which is two orders of magnitude lower than that of a single *** the case of solar-blind ultraviolet(UV)light irradiation,the photogenerated electrons further aggravate the coupling physical mechanism in device.I_(S2)increases as the intensity of UV light *** the UV light of 1820μW/cm^(2),I_(S2)quickly enters the saturation *** V_(S2)=10 V,photo-to-dark current ratio(PDCR)of the device reaches more than 104,the external quantum efficiency(EQE)is 1.6×10^(3)%,and the detectivity(D*)is 7.5×10^(12)*** addition,the device has a very short rise and decay times of 25−54 ms under different positive and negative *** shows unique electrical and optical control characteristics,which will open a new way for the application of nanobelt-based devices.

关键词： β-Ga_(2)O_(3)nanobelt carbothermal reduction UV light dual-Schottky coupling device

Performance study of vertical MSM solar-blind photodetectorsbased onβ-Ga_(2)O_(3)thin film

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The Journal of China Universities of Posts and Telecommunications 2024年第2期31卷 17-27页

作者： Chen Haifeng Che Lujie Lu Qin wang Shaoqing Liu xiangtai Liu Zhanhang Guan Youyou Zhao Xu Cheng Hang Han Xiaocong Zhang Xuhui School of Electronic Engineering Xi'an University of Posts and TelecommunicationsXi'an 710121China

In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-rays diffraction(XRD).Based on the grownβ-Ga_(2)O_(3)thin films,vertical metal-semiconductor-metal(MSM)interdigital photodetectors(PDs)were fabricated and *** PDs have an ultralow dark current of 1.92 pA,ultra-high photo-to-dark current ratio(PDCR)of 1.7×10^(6),and ultra-high detectivity of 4.25×10^(14)Jones at a bias voltage of 10 V under 254 nm deep ultraviolet(DUV).Compared with the horizontal MSM PDs under the same process,the PDCR and detectivity of the fabricated vertical PDs are increased by 1000 times and 100 times,*** addition,the vertical PDs possess a high responsivity of 34.24 A/W and an external quantum efficiency of 1.67×10^(4)%,and also exhibit robustness and repeatability,which indicate excellent *** the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.

关键词： Ga_(2)O_(3) atomic layer deposition(ALD) annealing vertical metal-semiconductor-metal(MSM)interdigital photodetectors

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双参数优先级递推式变采样周期调度算法

系统仿真学报 2020年第9期32卷 1711-1716页

作者：时维国许超王迅王祥泰大连交通大学电气信息工程学院辽宁大连116028

针对资源受限的网络控制系统,提出了一种基于双参数优先级的递推式变采样周期动态调度算法。计算控制回路的网络需求度和网络紧急度双参数,并以控制回路误差的绝对值建立二次平方根映射函数来确定双参数权重,实现对传感器优先级的调度... 详细信息

针对资源受限的网络控制系统,提出了一种基于双参数优先级的递推式变采样周期动态调度算法。计算控制回路的网络需求度和网络紧急度双参数,并以控制回路误差的绝对值建立二次平方根映射函数来确定双参数权重,实现对传感器优先级的调度。同时,综合分析控制回路性能递推动态调节各控制回路的采样周期,在保证控制系统的稳定的前提下完成调度调节。仿真表明该调度算法提高了网络控制系统的控制质量。

关键词：网络控制系统双参数优先级递推变采样周期

我国贫困地区职业教育精准扶贫的政策与实践分析

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职业技术教育 2019年第21期40卷 8-13页

作者：房风文邵苗苗王向太教育部职业技术教育中心研究所北京100029 山东经贸职业学院会计系乾县职业教育中心

针对贫困地区,我国出台了诸多职业教育精准扶贫政策,推出职业教育学生资助、内地中职班、东西部职业教育对口支援、扶贫职业技能培训等举措,为贫困地区教育公平、民生改善、教育进步和经济社会发展作出重要贡献,但仍受到较多内外因素制... 详细信息

针对贫困地区,我国出台了诸多职业教育精准扶贫政策,推出职业教育学生资助、内地中职班、东西部职业教育对口支援、扶贫职业技能培训等举措,为贫困地区教育公平、民生改善、教育进步和经济社会发展作出重要贡献,但仍受到较多内外因素制约,影响精准扶贫效能发挥。面向全面建成小康社会,贫困地区职业教育精准扶贫需要统筹谋划,加大投入,完善机制,充分吸纳社会力量参与。

关键词：贫困地区职业教育精准扶贫