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Exploring water and ion transport process at silicone/copper interfaces using in-situ electrochemical and Kelvin probe approaches

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journal of Materials Science & Technology 2021年第5期64卷 203-213页

作者： B.Munirathinam j.P.B.van Dam A.Herrmann w.D.van driel F.De Buyl S.j.F.Erich L.G.j.van der Ven O.C.G.Adan j.M.C.Mol Delft University of Technology Department of Materials Science and Engineering DepartmentDelftThe Netherlands Eindhoven University of Technology Department of Applied PhysicsEindhovenThe Netherlands Signify High Tech CampusEindhovenThe Netherlands Delft University of Technology Electronic ComponentsTechnology and MaterialsFaculty of Electrical EngineeringDelftThe Netherlands Dow Silicones Belgium s.p.r.l. Belgium

In general,packaging materials which encapsulate light emitting diodes(LEDs)and microelectronic devices offer barrier protection against several environmental hazards such as water and ionic ***,these encapsulants may provide pathways for water and ionic contaminants to reach the metal/polymer interfaces and provoke local corrosion of electronics,which is a major reliability concern for polymer encapsulated LEDs and *** the water and corrosive constituents play a crucial role in their reliability,water uptake kinetics,interfacial ion transport and delamination behaviour of silicone coated copper model system,mimicking a typical microelectronics packaging system,is explored in the present *** impedance spectroscopy(EIS)integrated with attenuated total reflection Fourier transform infrared(ATR-FTIR)spectroscopy studies revealed that water diffusion inside the silicone network is Fickian in nature and the evolution of the observed time constants are related to the diffusion and interfacial reactions.A decrease of impedance magnitude with time was observed in EIS measurements concurrently with water absorption bands shifting towards lower wavenumber in ATR-FTIR measurements,implying the growth of strong hydrogen bonding between water molecules and the silicone *** estimated diffusion constant of water using the capacitance method was in the order of 7×10^(-12)m^(2)s^(-1)and the water absorption volume fraction was in the range of 0%to 0.30%.Scanning Kelvin probe studies elucidated the ion transport process occurring at the silicone/copper interface in a humid *** interfacial ion transport process is controlled by the interfacial electrochemical reactions at the cathodic delamination front and the estimated average delamination rate is 0.43 mm h^(-1/2).This work demonstrates that exploring ion and water transport in the silicone coating and along the silicone/copper interface is of pivotal importance as

关键词： Silicone Impedance water transport Scanning Kelvin probe Delamination

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Fast Characterization for Moisture Properties of Moulding Compounds: Influence of Temperature and Humidity

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Fast Characterization for Moisture Properties of Moulding Co...

Characterization of Interface Strength as Function of Temperature and Moisture Conditions

第六届电子封装技术国际学术会议

作者： R.C.j.Vogels w.D. van driel Technical University Eindhoven Eindhoven Guilin University of Electronic Technology Guilin China IMO-Backend Innovation Philips Semiconductors Nijmegen The Netherlands

Moisture induced failure is a major problem in modern IC technology. when there is moisture present in the moulding compound before the chip is soldered to the Printed Circuit Board, or gets another h

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电子与封装 2007年第2期7卷 16-22页

作者： w.D. van driel P.j.j.H.A. Habets M.A.j. van Gils G.Q. Zhang Philips Semiconductors 6500 MD Nijmegen The Netherlands Philips Applied Technologies 5600 MD Eindhoven The Netherlands Delft University of Technology Mekelweg 2 2628 CD Delft The Netherlands Eindhoven University of Technology Eindhoven The Netherlands

Since Moisture Sensitivity Level (MSL) tests are part of the international reliability qualification standards, all the microelectronics components/products have to pass these specifications. Therefore, it is important to be able to efficiently and accurately characterize and predict the moisture related material and interface behavior in the real manufacturing, processing, testing and application conditions. The success of interfacial fracture mechanics approach to analyze moisture-induced failures in IC packaging strongly depend on accurate characterization of the critical adhesion strength, Gc. However, its measurement is complicated by the fact that adhesion depends not only on moisture concentration, C, but also temperature, T, and mode mixity, ψ. This paper described our research to develop a reliable methodology for interface toughness evaluation as function of temperature, humidity and mode mixity. Our methodology includes using the four-point bending test and shaft-loaded-blister method. Dedicated specimens consisting of various types of moulding compounds bonded onto leadframe are manufactured. Besides temperature, moisture content and mode mixity effects, also the influences of surface treatment (leadframe oxidation and contamination) and production process on the interface fracture toughness are evaluated. Multi-physics-based numerical methods are used to transfer the experimental critical loads to an interface strength parameter. These analysis covers mechanical, moisture diffusion, vapor pressure, hygro-swelling and CTE-mismatch modeling. To test and improve the methodology, various effects are evaluated, such as crack-length dependency, material properties, specimen- width, displacement-rate of the upper support/shaft, etc. The results of the proposed methodology indicate, as expected, a change in interface toughness by mode mixity, moisture content and temperature. It is found that Gc decreases with increasing moisture content and temperature. The pr

关键词：封装散热温度功能

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在跌落撞击负载条件下的键合互连可靠性测试(英文)

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电子工业专用设备 2008年第1期37卷 1-9页

作者： j.j.M. Zaal w.D. van driel H.P.Hochstenbachl G.Q.Zhang NXP Semiconductors The NetherlandsThe Netherlands Gerstweg 26534AE Nijmegen The Netherlands Delft University of Technology The Netherlands Gerstweg 2 6534AE Nijmegen The Netherlands

在大多数移动通信装置的寿命中最常见的故障是通过跌落撞击产生的。这是当今通过跌落撞击测试的方法测得的,该方法已经通过了jEDEC标准。然而这种方法相当耗时,且复验性方面还存在着一些问题。报道的研究是在与焊凸冷拉相关联的跌落撞... 详细信息

在大多数移动通信装置的寿命中最常见的故障是通过跌落撞击产生的。这是当今通过跌落撞击测试的方法测得的,该方法已经通过了jEDEC标准。然而这种方法相当耗时,且复验性方面还存在着一些问题。报道的研究是在与焊凸冷拉相关联的跌落撞击测试情况下完成的,这两者之间可以替代。本研究方法旨在了解引起故障的机械负载,并不仅仅是适合于数据。因此,跌落撞击测试便成为一种模式并备用来验证这一模式的试验,它将成为未来的处理方式。完成的焊凸冷拉测试研究证实,该测试未将焊凸偏移至一种确定的故障模式,测试研究的结果以及有关焊凸的模拟情况一并作了阐述。两种测试似乎是测试了相同的现象,根据来自CBP(cold bump pull)的结果表明与跌落撞击测试的情况相同,但由于模拟和试验工作尚未完全结束,其中的详情暂无法提供。

关键词：互连可靠性 PCB 跌落撞击测试焊凸冷拉测试

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先进SSL系统可靠性预测框架（英文）

先进SSL系统可靠性预测框架（英文）