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Augmentation of situational awareness by fault passage indicators in distribution network incorporating network reconfiguration

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Protection and Control of Modern Power Systems 2019年第1期4卷 281-294页

作者： Tanmay jain Debomita Ghosh Dusmanta Kumar Mohanta Department of Electrical and Electronics Engineering Birla Institute of TechnologyMesraRanchiIndia

Power distribution systems are profoundly inclined to disturbances like untimely switching of breakers & relays, sympathetic tripping, and uncertainties regarding fault location. Thus, system stability and reliability are greatly affected. In this way, situational awareness and system integrity are the crucial factors in developing power system security, as it empowers successful decision making & timely reaction by the operators to any disturbance and also maintaining continuity of power supply. This paper focuses on the enhancement of situational awareness by fault location through fault passage indicators (FPI) to improve nominal impedance-based methods in distribution networks. Also, the proposed method is validated by comparing it with Intelligent Electronic Device (IED) based fault location method. Further, simultaneous reconfiguration of the system is incorporated to maintain the continuity of supply. The analysis has been tested on IEEE 33 bus distribution system.

关键词： Situational awareness Fault passage Indicator Tie switching Reconfiguration

ON THE (p,q)-MELLIN TRANSFORM AND ITS APPLICATIONS

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Acta Mathematica Scientia 2021年第5期41卷 1719-1732页

作者： Pankaj jain Chandrani BASU Vivek PANWAR Department of Mathematics South Asian University Akbar BhawanChanakya PuriNew Delhi-110021India

In this paper,we introduce and study a(p,q)-Mellin transform and its corresponding convolution and *** terms of applications of the(p,q)-Mellin transform,we solve some integral ***,a(p,q)-analogue of the Titchmarsh th... 详细信息

关键词： q-Mellin transform (p q)-Mellin transform inversion formula convolution integral equation

Analysis and performance exploration of high performance(HfO_2) SOI FinFETs over the conventional(Si_3N_4) SOI FinFET towards analog/RF design

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Journal of Semiconductors 2018年第12期39卷 68-74页

作者： Neeraj jain Balwinder Raj VLSI Design Lab Department of Electronics and Communication Engineering Dr.B.R.Ambedkar National Institute of Technology (NIT)

Nowadays FinFET devices have replaced the MOS devices almost in all complex integrated circuits of electronic gadgets like computer peripherals, tablets, and smartphones in portable electronics. The scaling of FinFET is ongoing and the analog/RF performance is most affected by increased SCEs(short channel effects) in sub22 nm technology nodes. This paper explores the analog/RF performance study and analysis of high performance device-D2(conventional Hf02 spacer SOI FinFET) and device-D3(source/drain extended Hf02 spacer SOI FinFET) over the device-D1(conventional Si3 N4 spacer SOI FinFET) at 20 nm technology node through the 3-D(dimensional) simulation process. The major performance parameters like I(ON current), I(OFF current), gm(transconductance), gd(output conductance), A(intrinsic gain), SS(sub-threshold slope), TGF = g/I(trans-conductance generation factor), VEA(early voltage), GTFP(gain trans-conductance frequency product), TFP(tansconductance frequency product), GFP(gain frequency product), and f(cut-off frequency) are studied for evaluating the analog/RF performance of different flavored SOI FinFET structures. For analog performance evaluation,device-D3 and D2 give better results in terms of gm, ID(drain current) and SS parameters, and for RF performance evaluation device-D1 is better in terms of f, GTFP, TFP, and GFP parameters both at low and high values of V=0.05 V and V=0.7 V respectively.

关键词： SOI FinFET SCEs intrinsic gain trans-conductance cut-off frequency

Analysis of dispatching rules in a stochastic dynamic job shop manufacturing system with sequence-dependent setup times

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Frontiers of Mechanical Engineering 2014年第4期9卷 380-389页

作者： Pankaj SHARMA Ajai jain Department of Mechanical Engineering National Institute of Technology Kurukshetra 136119 India

Stochastic dynamic job shop scheduling pro- blem with consideration of sequence-dependent setup times are among the most difficult classes of scheduling problems. This paper assesses the performance of nine dispatching rules in such shop from makespan, mean flow time, maximum flow time, mean tardiness, maximum tardiness, number of tardy jobs, total setups and mean setup time performance measures viewpoint. A discrete event simulation model of a stochastic dynamic job shop manufacturing system is developed for investigation purpose. Nine dispatching rules identified from literature are incorporated in the simulation model. The simulation experiments are conducted under due date tightness factor of 3, shop utilization percentage of 90 % and setup times less than processing times. Results indicate that shortest setup time （SIMSET） rule provides the best performance for mean flow time and number of tardy jobs measures. The job with similar setup and modified earliest due date （JMEDD） rule provides the best performance for make- span, maximum flow time, mean tardiness, maximum tardiness, total setups and mean setup time measures.

关键词： scheduling,sequence-dependent setuptionstochastic dynamic job shop,times dispatching rule simulation

Development and Characterization of Sol-gel Derived Al Doped ZnO/p-Si Photodiode

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Journal of Materials Science & Technology 2010年第3期26卷 223-227页

作者： Babita Gupta Anubha jain R.M.Mehra Department of Electronic Science University of Delhi South Campus

The effect of Al doping on the J-V characteristics sol-gel derived of ZnO/p-Si photodiodes was *** resistivity of Si was 0.1Ω·*** films annealed at 500℃ were of the best *** investigate the spectral response of the photodiodes,the J-V characteristics were measured under different monochromatic lights at wavelength 420,530,570 and 630 *** diodes exhibit strong responsivity in the blue region at 420 *** responsivity is 0.22 A/W for Al doped （0.8 wt pct） photodiode,whereas for the undoped photodiode,it was much *** estimate of the responsivity as a function of wavelength has been made in terms of the width of depletion region of photodiodes.

关键词： Sol-gel Al doping Photodiode J-V characteristics Responsivity

Recent advances in the design of biosensors based on novel nanomaterials:An insight

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Nanotechnology and Precision Engineering 2021年第4期4卷 71-88页

作者： Nidhi Chauhan Kirti Saxena Mayukh Tikadar Utkarsh jain Amity Institute of Nanotechnology(AINT) Amity University Uttar Pradesh(AUUP)Sector-125Noida 201313India

Biosensors have acquired much importance in drug discovery,medical diagnostics,food safety,defense,security,and monitoring of environmental ***,there has been great progress in the potential applications of advanced nanomaterials in *** year there are several advances in sensing techniques that can be attributed to nanomaterials,biorecognition elements,or their related fabrication *** further development of nanotechnology-based sensors provides a wide variety of opportunities to modern *** nanomaterials can provide remarkable optical,electrical,mechanical,and catalytic *** example,transition metals and organic polymers have been used in the fabrication of powerful,sensitive,and precise *** distinctive properties of advanced nanomaterials have been widely incorporated into ***,fabrication techniques also play important roles in the development of these ***,we present a review of some of the advanced nanomaterials that have been widely used over the last few years and discuss their fabrication *** focus of this review is to provide a directional perspective of recently fabricated advanced nanomaterial-based biosensors in the diagnosis of various diseases.

关键词： Biosensors Advanced nanomaterials Transition metals Fabrication of biosensors Fabrication techniques

Impact of underlap spacer region variation on electrostatic and analog perform-ance of symmetrical high-k SOI FinFET at 20 nm channel length

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Journal of Semiconductors 2017年第12期38卷 13-21页

作者： Neeraj jain Balwinder Raj VLSI Design Lab Department of Electronics and Communication EngineeringDr.B.R.Ambedkar National Institute of Technology(NIT)JalandharIndia

Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects （SCEs）, leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SO1 FinFET is one of the best multigate structures that has gained importance in all electronic design automation （EDA） industries due to its improved short channel effects （SCEs）, because of its more effective gate-controlling capabilities. In this paper, our aim is to ex- plore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evalu- ated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope （SS）, ON current （Ion）, OFF current （/off） and Ion/loll ratio. The potential benefits of SOl FinFET at drain-to-source voltage, liDS = 0.05 V and VDS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain （Av）, output conductance （go）, trans-conductance （gin）, gate capacitance （Cgg）, and cut-off frequency OCT = gm/2πCgg） with spacer region variations.

关键词： SOI FinFET SCEs underlap region DIBL analog and RF performance

Safe laparoscopic cholecystectomy:Adoption of universal culture of safety in cholecystectomy

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World Journal of Gastrointestinal Surgery 2019年第2期11卷 62-84页

作者： Vishal Gupta Gaurav jain Department of Surgical Gastroenterology Shatabdi Hospital Phase 1 King George’s Medical University Transplant and HPB Surgery the Iowa Clinic-Iowa Methodist Hospital

The incidence of biliary injury after laparoscopic cholecystectomy(LC) has shown a declining trend though it may still be twice that as with open cholecystectomy. Major biliary or vasculobiliary injury is associated with significant morbidity. As prevention is the best strategy, the concept of a culture of safe cholecystectomy has been recently introduced to educate surgeons and apprise them of basic tenets of safe performance of LC. Various aspects of safe cholecystectomy include:(1) thorough knowledge of relevant anatomy, various anatomical landmarks, and anatomical variations;(2) an understanding of the mechanisms involved in biliary/vascular injury, the most important being the misidentification injury;(3) identification of various preoperative and intraoperative predictors of difficult cholecystectomy;(4) proper gallbladder retraction;(5) safe use of various energy devices;(6) understanding the critical view of safety, including its doublet view and documentation;(7) awareness of various error traps(e.g., fundus first technique);(8) use of various bailout strategies(e.g., subtotal cholecystectomy) in difficult gallbladder cases;(9) use of intraoperative imaging techniques(e.g., intraoperative cholangiogram) to ascertain correct anatomy; and(10) understanding the concept of *** should be facile with these aspects of this culture of safety in cholecystectomy in an attempt to reduce the incidence of biliary/vascular injury during LC.

关键词： Bile leak Bile duct injury Cholecystectomy Cholelithiasis Cholecystitis

Modelling and analysis of FMS productivity variables by ISM, SEM and GTMA approach

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Frontiers of Mechanical Engineering 2014年第3期9卷 218-232页

作者： Vineet jain Tilak RAJ Department of Mechanical Engineering Amity University HaryanaGurgaon 122413 India Department of Mechanical Engineering YMCA University of Scienceand Technology Faridabad 121006 India

Productivity has often been cited as a key factor in a flexible manufacturing system （FMS） perfor- mance, and actions to increase it are said to improve profitability and the wage earning capacity of employees. Improving productivity is seen as a key issue for survival and success in the long term of a manufacturing system. The purpose of this paper is to make a model and analysis of the productivity variables of FMS. This study was performed by different approaches viz. interpretive structural modelling （ISM）, structural equation modelling （SEM）, graph theory and matrix approach （GTMA） and a cross-sectional survey within manufacturing firms in India. ISM has been used to develop a model of productivity variables, and then it has been analyzed. Exploratory factor analysis （EFA） and confirmatory factor analysis （CFA） are powerful statistical techniques. CFA is carried by SEM. EFA is applied to extract the factors in FMS by the statistical package for social sciences （SPSS 20） software and confirming these factors by CFA through analysis of moment structures （AMOS 20） software. The twenty productivity variables are identified through literature and four factors extracted, which involves the productivity of FMS. The four factors are people, quality, machine and flexibility. SEM using AMOS 20 was used to perform the first order four-factor structures. GTMA is a multiple attribute decision making （MADM） methodology used to find intensity/quantification of productivity variables in an organization. The FMS productivity index has purposed to intensify the factors which affect FMS.

关键词： FMS ISM EFA SEM GTMA