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X-Ray Diffractometry and Raman Spectroscopy Investigation of Irradiated Layered III-VI Crystals

材料科学与工程（中英文A版） 2012年第7期2卷 537-543页

作者： Zakhar Dmytrovych Kovalyuk Oleg Mykolayovych Sydor Oksana Anatoliivna Sydor volodymyr Grygorovych Tkachenko Igor Mykolayovych Maksymchuk volodymyr ivanovych dubinko Pavlo Mykolayovych Ostapchuk Chernivtsi Department of the Institute of Materials Science Problems Chernivtsi 58001 Ukraine Institute of Materials Science Problems Kyiv 03680 Ukraine National Scientific Center "Kharkiv Physico-Technical Institute " Kharkiv 61108 Ukraine

The present results of investigations of the influence of irradiation on layered n-InSe, p-InSe, and p-GaSe semiconductors. Two types of irradiation are considered: (1) the bremsstrahlung ?-quanta with effective energy of 3MeV and the irradiation dose ranging from 0.14 to 140 kGy and (2) 12 MeV electron irradiation up to the dose ranging from 3.3 to 33 MGy. The crystal structure, lattice parameters, and atom coordination environment were investigated by means of X-ray structure analysis and Raman spectra measurements. It is shown that all samples under investigation have high structural perfection. It is shown that even the maximum dose levels of ?-quanta and electrons did not caused qualitative changes in the investigated spectra, which indicates that the influence of the irradiation on the subsystems of vacancies and impurities in InSe and GaSe is insignificant. Possible physical phenomena occurring in the layered crystals subjected to irradiation are described. It is suggested tentatively that the dopant atoms of Cd in p-InSe are the centers for localization of radiation-induced vacancies, whereas in the intentionally undoped crystals, the vacancies are localized in the sublattices of In or Ga. These results enable one to consider layered semiconductors as potential candidates for preparation of radiation-resistant photoconverters or detectors of high-energy particles.

关键词： X-射线衍射拉曼光谱电子辐照晶体结构照射剂量层状晶体晶格常数调查结果

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