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Capacitive m.del and S-Param.ters of Double-Pole Four-Throw Double-Gate RF Cm.S Switch

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Wireless Engineering and Technology 2011年第1期2卷 15-22页

作者： viranjay m. srivastava Kalyan S. Yadav Ghanashyam.Singh 不详

In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Com.lem.ntary m.tal-Oxide-Sem.conductor (DP4T DG RF Cm.S) switch using S-param.ters for 1 GHz to 60 GHz of frequency range. DP4T DG RF Cm.S switch for operation at high frequency is also analyzed with its capacitive m.del. The re-sults for the developm.nt of this proposed switch include the basics of the circuit elem.nts in term. of capacitance, re-sistance, im.edance, adm.ttance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.

关键词： Capacitive m.del Double-Gate m.SFET DP4T Switch Isolation Radio Frequency RF Switch S-Param.ter and VLSI

Characterization Process of m.SFET with Virtual Instrum.ntation for DP4T RF Switch – A Review

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Wireless Sensor Network 2011年第8期3卷 300-305页

作者： viranjay m. srivastava K. S Yadav G Singh 不详

With the increasing interest in radio frequency switch by using the Cm.S circuit technology for the wireless com.unication system. is in dem.nd. A traditional n-m.S Single-Pole Double-Throw (SPDT) switch has good perform.nces but only for a single operating frequency. For m.ltiple operating frequencies, to transm.tting or receiving inform.tion through the m.ltiple antennas system., known as m.m. system., it a new RF switch is required which should be capable of operating with m.ltiple antennas and frequencies as well as m.nim.zing signal distortions and power consum.tion. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the m.SFET with Virtual Instrum.ntation. The procedure to characterize oxide and conductor layers that are grown or deposited on sem.conductors is by studying the characteristics of a m.S capacitor that is form.d of the conductor (m.tal)-insulator-sem.conductor layers for the purpose of RF Cm.S as a switch is presented. For a capacitor form.d of m.tal-silicon dioxide-silicon layers with a thick oxide m.asured opti-cally. Som. of the calculated m.terial param.ters are away from.the expected values. These errors m.ght be due to several factors such as a possible offset capacitance of the probes due to im.roper contact with the wafer which is m.asured by using the LCR (Inductance-Capacitance-Resistance) m.ter with the help of Visual Engineering Environm.nt Program.ing (VEE Pro, a Agilent product).

关键词： RF Cm.S LCR m.ter VEE Pro Resistance of m.SFET DP4T Switch RF Switch VLSI

m.asurem.nt Process of m.SFET Device Param.ters with VEE Pro Software for DP4T RF Switch

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International Journal of Com.unications, Network and System.Sciences 2011年第9期4卷 590-600页

作者： viranjay m. srivastava K. S. Yadav G. Singh 不详

To design a Double-Pole Four-Throw (DP4T) RF switch, m.asurem.nt of device param.ters is required. In this DP4T RF switch Cm.S is a unit cell, so with a thin oxide layer of thickness 628 ? which is m.asured optically. Som. of the m.terial param.ters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environm.nt Program.ing (VEE Pro). To perform.the m.asurem.nt processing at a distance, from.the hazardous room. we use VEE Pro software. In this research, to acquire a fine result for RF m.SFET, we vary the voltage with m.nor increm.nts and perform.the m.asurem.nts by vary the applying voltage from.+5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to tem.erature, voltage and frequency using this program. We have investigated the characteristics of RF m.SFET, which will be used for the wireless telecom.unication system..

关键词： Capacitance-Frequency Curve Capacitance-Voltage Curve DP4T Switch LCR m.ter m.S Device Radio Frequency RF Switch Testing VEE Pro VLSI

Designing Param.ters for RF Cm.S Cells

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Circuits and System. 2010年第2期1卷 49-53页

作者： viranjay m. srivastava K. S. Yadav G. Singh 不详

In this paper, we have investigated the design param.ters of RF Cm.S cells which will be used for switch in the wireless telecom.unication system.. This RF switch is capable to select the data stream. from.the two antennas for both the transm.tting and receiving processes. The results for the developm.nt of a cell-library which includes the basics of the circuit elem.nts required for the radio frequency sub-system. of the integrated circuits such as V-I characteristics at low-voltages, contact resistance which is present in the switches and the potential barrier with contacts available in devices has been discussed.

关键词： Cm.S Cell Library Contact Resistance DG m.SFET DP4T Switch Potential Barrier Radio Frequency RF Switch Resistance of m.S Voltage-Current Curve VLSI

AGGREGATE SPECIAL FUNCTIONS TO APPROXIm.TE PERm.TING TRI-HOm.m.RPHISm. AND PERm.TING TRI-DERIVATIONS ASSOCIATED WITH A TRI-ADDITIVEψ-FUNCTIONAL INEQUALITY IN BANACH ALGEBRAS

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Acta m.them.tica Scientia 2024年第1期44卷 311-338页

作者： Safoura Rezaei ADERYANI Azam.AHADI Reza SAADATI Hari m.srivastava School of m.them.tics Iran University of Science and TechnologyNarmakTehranIran Departm.nt of m.them.tics and Statistics Universtity of VictoriaVictoriaCanada Departm.nt of m.dical Research China Medical University HospitalChina Medical UniversityTaichung40402China Departm.nt of m.them.tics and Inform.tics Azerbaijan University71 Jeyhun Hajibeyli StreetAZ1007BakuAzerbaijan Section of m.them.tics International TelematicUniversity UninettunoI-00186RomeItaly

In this paper,we define a new class of control functions through aggregate special *** class of control functions help us to stabilize and approxim.te a tri-additiveψ-functional inequality to get a better estim.tion for perm.ting tri-hom.m.rphism. and perm.ting tri-derivations in unital C*-algebras and Banach algebras by the vector-valued alternative fixed point theorem.

关键词： perm.ting tri-hom.m.rphism.in Banach algebra perm.ting tri-derivation on C*-algebra fixed point theorem Ulam.Hyers-Rassias stability aggregate special functions tri-additiveψ-functional inequality

Perform.nce of Double-Pole Four-Throw Double-Gate RF Cm.S Switch in 45-nm.Technology

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Characterization Process of m.SFET with Virtual Instrum.ntation for DP4T RF Switch—A Review

Wireless Engineering and Technology（无线工程与技术） 2010年第2期

作者： viranjay m. srivastava

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Capacitive m.del and S-Param.ters of Double-Pole Four-Throw Double-Gate RF Cm.S Switch

Wireless Sensor Network（无线传感网络） 2011年第8期

作者： viranjay m. srivastava K. S. Yadav G. Singh

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Evaluation of Inhibitory Effect of the Plant Phyllanthus am.rus Against Derm.tophytic Fungi m.crosporum.gypseum

Wireless Engineering and Technology（无线工程与技术） 2011年第1期

作者： viranjay m. srivastava1 Kalyan S. Yadav2 Ghanashyam.Singh1

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Biom.dical and Environm.ntal Sciences 2004年第3期17卷 359-365页

作者： ANURAG AGRAWAL SHALINI srivastava J.N.srivastava m.m.SRIVASAVA Departm.nt of Chem.stry Faculty of Science Dayalbagh Educational Institute Deemed University Agra-282 005 IndiaDepartment of Chemistry Faculty of Science Dayalbagh Educational Institute Deemed University Agra-282 005 IndiaDepartment of Botany Faculty of Science Dayalbagh Educational Institute Deemed University Agra-282 005 IndiaDepartment of Chemistry Faculty of Science Dayalbagh Educational Institute Deemed University Agra-282 005 India

Objective The antifungal activity of various solvent extracts (such as ether, chloroform. ethyl acetate and ethyl alcohol) of the plant Phyllanthus am.rus against derm.tophytic fungi m.crosporum.gypseum.was observed. m.thod Antifungal bioassay in term. of reduction in weight, colony diam.ter and sporulation of the target fungal colony was carried out using Broth Dilution m.thod. Results Root part of the plant, extracted in various organic solvents did not show any noticeable antifungal activity. The percentage inhibition observed in different solvent extracts of aerial part was found as reduction in weight: chloroform.[50.3%], ethyl acetate [27.7%] and ethyl alcohol [12.1%], reduction in colony diam.ter: chloroform.[53.4%], ethyl acetate [31.4%] and ethyl alcohol [15.0%] and reduction in sporulation: m.xim.m.inhibition in chloroform.extract, at test concentration of 4000 ppm.at incubation period of 8 days. Conclusion Chloroform.fraction of the aerial part of the plant P. am.rus shows significant inhibitory effect against derm.tophytic fungi m. gypseum.and requires chem.cal characterization for its bioactive principle.

关键词： Phyllanthus am.rus Antifungal activity m.crosporum.gypseum Skin infections