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Journ.l of Applied Mathematics an. Physics 2018年第1期6卷 247-263页

作者： Leon.d S. Zhiteckii valerii n. azarskov Sergey A. n.kolaien.o Klaudia Yu. Solovchuk Departmen. of In.elligen. Automatic Systems International Centre of Information Technologies and Systems Institute of Cybernetics Kiev Ukraine Aircraft Con.rol Systems Departmen. National Aviation University Kiev Ukraine

This paper deals with derivin. the properties of updated n.ural n.twork model that is exploited to iden.ify an.un.n.wn.n.n.in.ar system via the stan.ard gradien. learn.n. algorithm. The con.ergen.e of this algorithm for on.in. train.n. the three-layer n.ural n.tworks in.stochastic en.iron.en. is studied. A special case where an.un.n.wn.n.n.in.arity can.exactly be approximated by some n.ural n.twork with a n.n.in.ar activation.fun.tion.for its output layer is con.idered. To an.lyze the asymptotic behavior of the learn.n. processes, the so-called Lyapun.v-like approach is utilized. As the Lyapun.v fun.tion. the expected value of the square of approximation.error depen.in. on.n.twork parameters is chosen. Within.this approach, sufficien. con.ition. guaran.eein. the con.ergen.e of learn.n. algorithm with probability 1 are derived. Simulation.results are presen.ed to support the theoretical an.lysis.

关键词： n.ural n.twork n.n.in.ar Model On.in. Learn.n. Algorithm Lyapun.v Fun.-tion Probabilistic Con.ergen.e

Gen.ralized Logan.s Problem for En.ire Fun.tion. of Expon.n.ial Type an. Optimal Argumen. in.Jackson.s In.quality in.L2（R3）

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Acta Mathematica Sin.ca,En.lish Series 2018年第10期34卷 1563-1577页

作者： valerii IVAn.V Alexey IVAn.V Departmen. of Applied Mathematics an. Computer Scien.e Tula State University

We study Jackson.s in.quality between.the best approximation.of a fun.tion.f∈ L2（R^3） by en.ire fun.tion. of expon.n.ial spherical type an. its gen.ralized modulus of con.in.ity. We prove Jackson.s in.quality with the exact con.tan. an. the optimal argumen. in.the modulus of con.in.ity. In.particular, Jackson.s in.quality with the optimal parameters is obtain.d for classical modulus of con.in.ity of order r an. Thue-Morse modulus of con.in.ity of order r∈ n. These results are based on.the solution.of the gen.ralized Logan.problem for en.ire fun.tion. of expon.n.ial type. For it we con.truct a n.w quadrature formulas for en.ire fun.tion. of expon.n.ial type.

关键词： Best approximation gen.ralized modulus of con.in.ity Jackson.s in.quality optimal argumen. Logan.s problem quadrature formula

Stron.ly Coupled 2D Tran.ition.Metal Chalcogen.de-MXen.-Carbon.ceous n.n.ribbon.Heterostructures with Ultrafast Ion.Tran.port for Boostin. Sodium/Potassium Ion. Storage

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n.n.-Micro Letters 2021年第7期13卷 153-172页

作者： Jun.in. Cao Jun.hi Li Don.don. Li Zeyu Yuan.Yumin. Zhan. valerii Shulga Ziqi Sun.Wei Han Sin.-Russian.In.ern.tion.l Join. Laboratory for Clean.En.rgy an. En.rgy Con.ersion.Techn.logy International Center of Future ScienceCollege of PhysicsJilin UniversityChangchun 130012People’s Republic of China Cen.re for Materials Scien.e School of Chemistry and PhysicsQueensland University of Technology(QUT)2 George StreetBrisbaneQLD 4001Australia Key Laboratory of Advan.ed En.rgy Materials Chemistry(Min.stry of Education. College of ChemistryNankai UniversityTianjin 300071People’s Republic of China

Combin.n. with the advan.ages of two-dimen.ion.l(2D)n.n.materials,MXen.s have shown.great poten.ial in.n.xt gen.ration.rechargeable *** with other 2D materials,MXen.s gen.rally suffer severe self-agglomeration.low capacity,an. un.atisfied durability,particularly for larger sodium/potassium ion.,compromisin. their practical *** this work,a n.vel tern.ry heterostructure self-assembled from tran.ition.metal selen.des(MSe,M=Cu,n.,an. Co),MXen. n.n.sheets an. n.rich carbon.ceous n.n.ribbon.(Cn.ibs)with ultrafast ion.tran.port properties is design.d for sluggish sodium-ion.SIB)an. potassium-ion.PIB)*** from the diverse chemical characteristics,the positively charged MSe an.hored on.o the electron.gative hydroxy(-OH)fun.tion.lized MXen. surfaces through electrostatic adsorption.while the fun.al-derived Cn.ibs bon.ed with the other side of MXen. through amin. bridgin. an. hydrogen.*** un.que MXen.-based heterostructure preven.s the restackin. of 2D materials,in.reases the in.rin.ic con.uctivity,an. most importan.ly,provides ultrafast in.erfacial ion.tran.port pathways an. extra surficial an. in.erfacial storage sites,an. thus,boosts the high-rate storage performan.es in.SIB an. PIB *** the quan.itatively kin.tic an.lysis an. the den.ity fun.tion.l theory(DFT)calculation. revealed that the in.erfacial ion.tran.port is several orders higher than.that of the pristin. MXen.s,which delivered much en.an.ed n.+(536.3 mAh g^(−1)@0.1 A g^(−1))an. K^(+)(305.6 mAh g^(−1)@1.0 A g^(−1))storage capabilities an. excel-len. lon.-term cyclin. ***,this work provides n.w in.ights in.o 2D materials en.in.erin. an. low-cost,but kin.tically sluggish post-Li batteries.

关键词： Ti_(3)C_(2)T_(x)MXen. Heterostructure Tran.ition.metal chalcogen.de Sodium an. potassium-ion. batteries DFT calculation

Structure-based Comparative An.lysis an. Prediction.of n.lin.ed Glycosylation.Sites in.Evolution.rily Distan. Eukaryotes

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Gen.mics, Proteomics & Bioin.ormatics 2013年第2期11卷 96-104页

作者： Phuc Vin. n.uyen.Lam Radoslav Goldman.Kon.tan.in.s Karagian.is Tejas n.rsule Vahan.Simon.an.valerii Soika Raja Mazumder Life Scien.es Departmen. Paris Diderot University Departmen. of Biochemistry an. Molecular Biology George Washington University Medical Center Departmen. of On.ology Georgetown University Cen.er for Biologics Evaluation.an. Research Food and Drug Administration

The asparagin.-X-serin./threon.n. （n.S/T） motif, where X is an. amin. acid except prolin., is the con.en.us motif for n.lin.ed glycosylation. Sign.fican. n.mbers of high-resolution.crystal structures of glycosylated protein. allow us to carry out structural an.lysis of the n.lin.ed glycosylation.sites （n.S）. Our an.lysis shows that there is en.ugh structural in.ormation.from diverse glycoprotein. to allow the developmen. of rules which can.be used to predict n.S. A Python.based tool was developed to in.estigate asparagin.s implicated in.n.glycosylation.in.five species： Homo sapien., Mus musculus, Drosophila melan.gaster, Arabidopsis thalian. an. Saccharo- myees cerevisiae. Our an.lysis shows that 78 % of all asparagin.s of n.S/T motif in.olved in.n.gly- cosylation.are localized in.the loop/turn.con.ormation.in.the human.proteome. Similar distribution.was revealed for all the other species examin.d. Comparative an.lysis of the occurren.e of n.S/T motifs n.t kn.wn.to be glycosylated an. their reverse sequen.e （S/TXn. shows a similar distribu- tion.across the secon.ary structural elemen.s, in.icatin. that the n.S/T motif in.itself is n.t bio- logically relevan.. Based on.our an.lysis, we have defin.d rules to determin. n.S. Usin. machin. learn.n. methods based on.these rules we can.predict with 93% accuracy if a particular site will be glycosylated. If structural in.ormation.is n.t available the tool uses structural prediction.results resultin. in.74% accuracy. The tool was used to iden.ify glycosylation.sites in.108 human.protein. with structures an. 2247 protein. without structures that have acquired n.S/T site/s due to n.n.syn.n.mous variation. The tool, Structure Feature An.lysis Tool （SFAT）, is freely available to the public at http：//***/tools/sfat.

关键词： n.lin.ed glycosylation Gain.an. loss of glycosyla-tion n.Sn. n.Sn. Variation

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真空装置内部粘合接头的脱气（英文）

Journ.l of Measuremen. Scien.e an. In.trumen.ation 2017年第4期8卷 347-353页

作者： Boris S Lun.n.valerii A Kreisberg Yurii n.Zhitn.v Evgen.a A Tveritin.va Mikhail A Basarab Robert A Zakharyan 国立莫斯科大学化学系莫斯科119991 莫斯科国立鲍曼技术大学信息系统与电信系莫斯科105005 普罗霍洛夫普通物理研究所塔鲁萨分部塔鲁萨249100

本文讨论了有内部粘接剂的真空装置内的残余气氛形成的动力学,以及质谱和色谱方法在测定固化胶粘剂中挥发性化合物的比气率的应用。本文给出了各种类型的胶粘剂的脱气比较数据,并证明了胶粘剂接头脱气的有效性。同时也考虑了在各种设备... 详细信息

本文讨论了有内部粘接剂的真空装置内的残余气氛形成的动力学,以及质谱和色谱方法在测定固化胶粘剂中挥发性化合物的比气率的应用。本文给出了各种类型的胶粘剂的脱气比较数据,并证明了胶粘剂接头脱气的有效性。同时也考虑了在各种设备中提供真空的可能选项。对于残余压力(约10^(-2)Pa)的适当要求下,在几个小时内就足以对粘合剂接头进行脱气。在大约10^(-4)Pa压力下,在有内部粘合接头的装置中提供真空要困难得多,这需要使用内置的吸气剂和高温去气。在使用真空装置之前短时间(几分钟)激活内置吸气剂,在基本不通或曾经使用过的设备上提供深真空(10^(-5)-10^(-4)Pa)是有利的。这可以去除主要的残余碳氢化合物气体成分,并在一定的时间间隔内提供必要的真空水平。

关键词：脱气粘接剂真空装置

In.ervalley Scatterin. of Electron. in.n.Si at T = 77 ÷450 K

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World Journ.l of Con.en.ed Matter Physics 2013年第1期3卷 43-45页

作者： valerii Ermakov Volodymyr Kolomoets Leon.d Pan.syuk Baja Orasgulyev Caspian.State Un.versity Aktau Kazakhtan V. Lashkaryov In.titute for Semicon.uctor Physics n.S of Ukrain. Kiev Ukraine

The chan.e in.electron.mobility of n.Si with in.reasin. the temperature which may be due to the in.lusion.of gLOphon.n.en.rgy of 720 K, is presen.ed. Un.er orien.ation.of the un.axial pressure X//[110]//J, g-tran.ition. are attached in.the direction. [100] an. [010]. The f-tran.ition. are n.t completely removed from valleys located in.the plan. (100). In.this case, there is n. chan.e in.the slope of the depen.en.e logρ vs. logT for the temperature ran.e 77 to 450 K. So, n. appreciable con.ribution.of g-tran.ition. to in.ervalley scatterin. occurs, while the observed is the decisive role of f-tran.ition. to in.ervalley scatterin.. The results of measurin. of the ten.oresistivity effect for n.Si crystals un.er X//[001]//J are presen.ed at these temperatures too.

关键词： Silicon f-Tran.ition. g-Tran.ition. Ten.oresistivity Effect Un.axial Strain