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Simulation Study of 50 nm Gate Length MOSFET Characteristics

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Advances in Materials Physics and Chemistry 2023年第6期13卷 121-134页

作者： towhid adnan chowdhury Department of Electrical & Electronic Engineering Ahsanullah University of Science & Technology Dhaka Bangladesh

With the need to improvement of speed of operation and the demand of low power MOSFET size scales down, in this paper, a 50 nm gate length n-type doped channel MOS (NMOS) is simulated using ATLAS packages of Silvaco TCAD Tool so as to observe various electrical parameters at this gate length. The parameters under investigation are the threshold voltage, subthreshold slope, on-state current, leakage current and drain induced barrier lowering (DIBL) by varying channel doping concentration, drain and source doping concentration and gate oxide thickness.

关键词： MOSFET Threshold Voltage Subthreshold Slope Leakage Current TCAD

XPS Depth Profile Study of Sprayed Ga₂O₃ Thin Films

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Engineering（科研） 2023年第8期15卷 459-466页

作者： towhid adnan chowdhury Department of Electrical & Electronic Engineering Ahsanullah University of Science & Technology Dhaka Bangladesh

Ga2O3 thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga2O3 thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.

关键词： Ga2O3 Thin Films x-Ray Photoelectron Spectroscopy Depth Profiling

Depth Profile Study of Electroless Deposited Sb₂S₃ Thin Films Using XPS for Photovoltaic Applications

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Materials Sciences and Applications 2023年第7期14卷 397-406页

作者： towhid adnan chowdhury Department of Electrical & Electronic Engineering Ahsanullah University of Science & Technology Dhaka Bangladesh

Sb2S3 has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb2S3 thin films were analyzed using XPS depth profile studies. The surface layers were found nearly stoichiometric. On the other hand, the inner layer was rich in antimony composition making it more conductive electrically.

关键词： Sb2S3 Depth Profiling X-Ray Photoelectron Spectroscopy Thin Film Electroless

Simulation Study of CuO-Based Solar Cell with Different Buffer Layers Using SCAPS-1D

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Energy and Power Engineering 2023年第9期15卷 307-314页

作者： towhid adnan chowdhury Department of Electrical & Electronic Engineering Ahsanullah University of Science & Technology Dhaka Bangladesh

In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In2S3, WS2 and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS2 buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.

关键词： Solar cell Buffer Layer Efficiency Hetero-Junction Scaps-1D

Simulation Study of Nanoscale FDSOI MOSFET Characteristics

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Soft Nanoscience Letters 2023年第3期13卷 13-22页

作者： towhid adnan chowdhury Department of Electrical & Electronic Engineering Ahsanullah University of Science & Technology Dhaka Bangladesh

Silicon on insulator (SOI) technology permits a good solution to the miniaturization as the MOSFET size scales down. This paper is about to compare the electrical performance of nanoscale FD-SOI MOSFET at various gate lengths. The performance is compared and contrasted with the help of threshold voltage, subthreshold slope, on-state current and leakage current. Interestingly, by decreasing the gate length, the leakage current and on-state current are increased but the threshold voltage is decreased and the sub-threshold slope is degraded. Silvaco two-dimensional simulations are used to analyze the performance of the proposed structures.

关键词： Fully Depleted Silicon on Insulator Threshold Voltage Subthreshold Slope Leakage Current Gate Length

XPS Study of Electroless Deposited Sb₂Se₃ Thin Films for Solar Cell Absorber Material

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Energy and Power Engineering 2023年第11期15卷 363-371页

作者： towhid adnan chowdhury Department of Electrical & Electronic Engineering Ahsanullah University of Science & Technology Dhaka Bangladesh

As a thin film solar cell absorber material, antimony selenide (Sb2Se3) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb2Se3 thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.

关键词： Sb2Se3 Electroless Depth Profiling Thin Film X-Ray Photoelectron Spectroscopy

Investigation of Sprayed Lu₂O₃ Thin Films Using XPS

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Advances in Materials Physics and Chemistry 2023年第11期13卷 197-205页

作者： towhid adnan chowdhury Department of Electrical & Electronic Engineering Ahsanullah University of Science & Technology Dhaka Bangladesh

Spray pyrolysis method was used to deposit Lutetium Oxide (Lu2O3) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu2O3 thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.

关键词： Lu2O3 Depth Profiling X-Ray Photoelectron Spectroscopy Thin Films

Longitudinal vibration characteristics of a tapered pipe pile considering the vertical support of surrounding soil and construction disturbance

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Earthquake Engineering and Engineering Vibration 2024年第1期23卷 51-63页

作者： Li Zhenya Pan Yunchao He Xianbin Lv Chong Mohammad towhid Key Laboratory of Ministry of Education for Geomechanics and Embankment Engineering Hohai UniversityNanjing 210098China Geotechnical Research Institute Hohai UniversityNanjing 210098China MOE Key Laboratory of Soft Soils and Geoenvironmental Engineering Zhejiang UniversityHangzhou 310058China

This research is concentrated on the longitudinal vibration of a tapered pipe pile considering the vertical support of the surrounding soil and construction ***,the pile-soil system is partitioned into finite segments in the vertical direction and the Voigt model is applied to simulate the vertical support of the surrounding soil acting on the pile *** surrounding soil is divided into finite ring-shaped zones in the radial direction to consider the construction ***,the shear complex stiffness at the pile-soil interface is derived by solving the dynamic equilibrium equation for the soil from the outermost to innermost *** displacement impedance at the top of an arbitrary pile segment is obtained by solving the dynamic equilibrium equation for the pile and is combined with the vertical support of the surrounding soil to derive the displacement impedance at the bottom of the upper adjacent ***,the displacement impedance at the pile head is obtained based on the impedance function transfer ***,the reliability of the proposed solution is verified,followed by a sensitivity analysis concerning the coupling effect of the pile parameters,construction disturbance and the vertical support of the surrounding soil on the displacement impedance of the pile.

关键词： tapered pipe pile longitudinal vibration vertical support of the surrounding soil construction disturbance displacement impedance

Extractable Phosphorus Contents of Some Soils of Bangladesh and Their Correlation with Phosphorus Concentration in Rice Leaves

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Open Journal of Soil Science 2013年第2期3卷 115-122页

作者： Enamul Haque Abul Kashem Khan towhid Osman Department of Soil Science University of Chittagong Chittagong Bangladesh.

To observe the availability of phosphorus by different extraction methods in some cultivated soils of Hathazari Upazilla of Chittagong District, this study was carried out with 36 surface soil samples (0 - 15 cm) belonging to six soil series, namely Bijipur, Pahartali, Mirsarai, Manu, Raojan and Noapara. Physical and chemical characteristics of the soils were also determined with an objective of identifying the soil factor(s) regulating P extractability. Three P extraction methods, namely Olsen (0.5 M NaHCO3, pH 8.5), Mehlich-3 (0.2 N CH3COOH + 0.013 N HNO3 + 0.015 N NH4F + 0.25 N NH4 NO3 + 0.001 M EDTA) and Bray & Kurtz-1 (0.03 N NH4F + 0.025 N HCl) were used. There was a wide variation in the extractability of P ranging from low to high categories. Olsen method extracted the largest amount of P (2.07 - 45.36 mg·kg-1) while Bray & Kurtz-1 extracted the smallest amount (1.02 - 21.79 mg·kg-1). The mean extractable P in soils was found to be in the order of Olsen > Mehlich-3 > Bray & Kurtz-1. Soil pH was the most dominant factor in determining P extractability. Available P was negatively correlated with percentage of clay, organic carbon and CEC and positively correlated with pH. Although the three methods extracted different amounts of P from soil, values of P extracted by the different methods were strongly correlated among themselves and with the leaf phosphorus concentration of rice growing in these soils.

关键词： Soil Series Available P Olsen P Mehlich-3 P Bray & Kurtz-1 P