检索结果-南通市图书馆

An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

引用

Light(Science & Applications) 2022年第6期11卷 1206-1217页

作者： Fan Zhang Jose Fcastaneda timothy hgfroerer Daniel Friedman Yong-Hang Zhang Mark Wwanlass Yong Zhang Department of Electrical and Computer Engineering The University of North Carolina at CharlotteCharlotteNC 28223USA Songshan Lake Materials Laboratory DongguanGuangdong 523808China Department of Physics Davidson CollegeDavidsonNC 28035USA National Renewable Energy Laboratory GoldenCO 80401USA School of Electrical Computer and Energy EngineeringArizona State UniversityTempeAZ 85287USA Wanlass Consulting NorwoodCO 81423USA

We demonstrate an all optical approach that can surprisingly offer the possibility of yielding much more information than one would expect,pertinent to the carrier recombination dynamics via both radiative and nonradiative processes when only one dominant deep defect level is present in a semiconductor *** applying a band-defect state coupling model that explicitly treats the inter-band radiative recombination and Shockley-Read-Hall(SRH)recombination via the deep defect states on an equal footing for any defect center occupation fraction,and analyzing photoluminescence(PL)as a function of excitation density over a wide range of the excitation density(e.g.,5-6 orders in magnitude),in conjunction with Raman measurements of the LO-phonon plasmon(LOPP)coupled mode,nearly all of the key parameters relevant to the recombination processes can be *** include internal quantum efficiency(IQE),minority and majority carrier density,inter-band radiative recombination rate(Wr),minority carrier nonradiative recombination rate(Wnr),defect center occupation fraction(f)),defect center density(Nt),and minority and majority carrier capture cross-sections(σt andσtM).While some of this information is thought to be obtainable optically,such as IQE and the Wr/Wnr ratio,most of the other parameters are generally considered to be attainable only through electrical techniques,such as current-voltage(Ⅰ-Ⅴ)characteristics and deep level transient spectroscopy(DLTS).Following a procedure developed herein,this approach has been successfully applied to three GaAs double-heterostructures that exhibit two distinctly different nonradiative recombination *** method greatly enhances the usefulness of the simple PL technique to an unprecedented level,facilitating comprehensive material and device characterization without the need for any device processing.

关键词： radiative defect approach

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：