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Hyoid Bone Position as an Etiological Factor in Mandibular Divergence and Morphology

Open journal of Orthopedics 2022年第1期12卷 10-25页

作者： tiffany pei-jou chen Falon Rodhisky Shuying Sue Jiang Thomas J. Cangialosi Private Practice of Orthodontics Manalapan NJ USA Private Practice of Orthodontics Hope Mills NJ USA Rutgers School of Dental Medicine Newark NJ USA Department of Orthodontics School of Dental Medicine Rutgers University Newark NJ USA

Objectives: The objective is to determine whether there are differences in the position of the hyoid bone at rest in natural head position in subjects with mandibular hyperdivergence and to evaluate whether there are differences in hyoid position and antegonial notch depth in mandibular hyperdivergent males and females. Methods and Materials: This is a retrospective cohort study involving a review of lateral cephalometric radiographs of 45 adult men and women with mandibular hyperdivergency. Hyperdivergency was determined by cephalometric ranges of: SN-GoGn as least +2 SD from normal, Y-axis, PP-GoGN, and gonial angle greater than +1SD from normal. A group of 45 normodivergent adults served as a control, with cephalometric ranges of: SN-GoGn within ±1 SD of normal, with only one measurement of the other three between +1 and +1.5 standard deviations. A custom

关键词： Hyoid Bone Mandibular Divergence Orthopedic Surgery

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Developments of Cr-Si and Ni-Cr Single-Layer Thin-Film Resistors and a Bi-Layer Thin-Film Resistor with Adjustable Temperature Coefficient of Resistor

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Materials Sciences and Applications 2016年第12期7卷 895-907页

作者： Huan-Yi cheng Ying-Chung chen Chi-Lun Li pei-jou Li Mau-Phon Houng cheng-Fu Yang Department of Electrical Engineering National Sun Yat-sen University Taiwan Institute of Microelectronics National Cheng-Kung University Taiwan Department of Chemical and Materials National University of Kaohsiung Taiwan

At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investigated. The resistances of Cr-Si and Ni-Cr thin-film resistors decreased with the increase of deposition time (thickness) and their resistivity had no apparent variations as the deposition time increased. The temperature coefficient of resistance (TCR) of single-layer Cr-Si thin-film resistors was negative and the TCR value of single-layer Ni-Cr thin-film resistors was positive. For that, we used Cr-Si thin films as upper (or lower) layer and Ni-Cr thin films as lower (upper) layer to investigate a bi-layer thin-film structure. The deposition time of Ni-Cr thin films was fixed at 10 min and the deposition time of Cr-Si thin films was changed from 10 min to 60 min. We had found that as Cr-Si thin films were used as upper or lower layers they had similar deposition rates. We had also found that the thickness and stack method of Cr-Si thin films had large effects on the resistance and TCR values of the bi-layer thin-film resistors.

关键词： Cr-Si Ni-Cr Sputtering Method Sheet Resistance Bi-Layer Structure

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