检索结果-南通市图书馆

Two-dimensional materials for future information technology: status and prospects

在线全文

学校读者我要写书评

暂无评论

Science china(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao qiu Zhihao YU tiange ZHAO Qi ZHANG mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN hui-ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu liu Can liu Chunsen liu Guanyu liu Kaihui liu Liwei liu Sheng liu yuan liu Donglin LU Likuan ma Feng MIAO Zhenhua NI Jing NING Anlian PAN tian-ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao tian Dong wang Hao wang Haomin wang Jialong wang Junyong wang Wenhui wang Xingjun wang Yeliang wang Yuwei wang Zhenyu wang Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum materials and Devices of the ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and manipulation (ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

Searching for^(76)Ge neutrinoless double beta decay with the CDEX-1B experiment

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Chinese Physics C 2024年第10期48卷 11-22页

作者： Bing-Tao Zhang Jun-Zheng wang Li-Tao Yang Qian Yue Ke-Jun Kang yuan-Jing Li Hai-Peng An C.Greeshma Jian-Ping Chang Yun-Huan Chen Jian-Ping Cheng Wen-Han Dai Zhi Deng Chang-Hao Fang Xin-Ping Geng hui Gong qiu-Ju Guo Xu-yuan Guo Li He Sheng-ming He Jin-Wei Hu Han-Xiong Huang Tu-Chen Huang Hai-Tao Jia Xi Jiang S.Karmakar Hao-Bin Li Jian-min Li Jin Li Qian-Yun Li Ren-ming-Jie Li Xue-Qian Li Yu-Lan Li Yi-Fan Liang Bin Liao Fong-Kay lin Shin-Ted lin Jia-Xuan liu Shu-Kui liu Yan-Dong liu Yu liu yuan-yuan liu Zhong-Zhi liu Hao ma Yu-Cai mao Qi-yuan Nie Jin-Hua Ning hui Pan Ning-Chun Qi Jie Ren Xi-Chao Ruan Ze She manoj Kumar Singh tian-Xi Sun Chang-Jian Tang Wei-You Tang Yang tian Guang-Fu wang Li wang Qing wang Yu-Feng wang Yun-Xiang wang Henry-Tsz-King Wong Shi-Yong Wu Yu-Cheng Wu Hao-Yang Xing Rui Xu Yin Xu Tao Xue Yu-Lu Yan Nan Yi Chun-Xu Yu Hai-Jun Yu Jian-Feng Yue ming Zeng Zhi Zeng Feng-Shou Zhang Lei Zhang Zhen-Hua Zhang Zhen-Yu Zhang Kang-Kang Zhao ming-Gang Zhao Ji-Fang Zhou Zu-Ying Zhou Jing-Jun Zhou Key Laboratory of Particle and Radiation Imaging(ministry of Education)and Department of Engineering Physics Tsinghua UniversityBeijing 100084 Department of Physics Tsinghua UniversityBeijing 100084 Institute of Physics Academia SinicaTaipei 11529 NUCTECH Company Beijing 100084 YaLong River Hydropower Development Company Chengdu 610051 College of Nuclear Science and technology Beijing Normal UniversityBeijing 100875 College of Physics Sichuan UniversityChengdu 610065 School of Physics Peking UniversityBeijing 100871 Department of Nuclear Physics China Institute of Atomic EnergyBeijing 102413 Sino-French Institute of Nuclear and technology Sun Yat-sen UniversityZhuhai 519082 School of Physics Nankai UniversityTianjin 300071 Department of Physics Banaras Hindu UniversityVaranasi 221005 Department of Physics Beijing Normal UniversityBeijing 100875

We operated a p-type point contact high purity germanium(PPCGe)detector(CDEX-1B,1.008 kg)in the china Jinping Underground Laboratory(CJPL)for 500.3 days to search for neutrinoless double beta(0νββ)decay of^(76)Ge.A total of 504.3 kg⋅day effective exposure data was *** anti-coincidence and the multi/single-site event(MSE/SSE)discrimination methods were used to suppress the background in the energy region of interest(ROI,1989–2089 keV for this work)with a factor of 23.A background level of 0.33 counts/(keV⋅kg⋅yr)was *** lower limit on the half life of^(76)Ge 0νββdecay was constrained as T_(1/2)^(0ν)>1.0×10^(23)yr(90%C.L.),corresponding to the upper limits on the effective majorana neutrino mass:<3.2–7.5 eV.

关键词： neutrinoless double beta decay CDEX point-contact germanium detector ^(76)Ge

Structural and Electrical Properties of Cu Films by dc Biased Plasma-Sputter-Deposited on MgO(001)

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of university of Science and technology beijing 2001年第3期8卷 207-209页

作者： Hong qiu, Yue tian, Mituru Hashimoto Applied Science School, university of Science and technology beijing, beijing 100083, china beijing Keda-tianyu Microelectronic material technology Development Corporation, 30 Xueyuanlu, Haidian District, beijing 10008 Applied Science School University of Science and Technology Beijing 100083 China

Cu films of30nm and 15 nm thick were deposited on MgO(001) substrates at 185℃ by dc plasma-sputtering at 1.9kv and 8 ma in pure Ar gas. A dc bias voltage Vs, of 0 V or -80 V was applied to the substrate during deposition. Structural and electrical proper-ties have been investigated by cross-sectional transmission electron microscopy (XTEM), high resolution XTEM (XHRTEM) and by measuring temperature coefficient of electrical resistance (TCR;η) in the temperature interval of-135℃ to 0 ℃. The Cu film is pol- ycrystalline at Vs= 0 V while it epitaxially grows with Cu(00 )|| MgO(00 1) and Cu[0 10] || MgO[010] at Vs,=-80 V. However, the latter has a very rough surface. The change of η with film thickness and Vs is interpreted in terms of the structure change. Misfit dislocations and lattice expansion are induced along the MgO surface to relax the strain energy due to the lattice mismatch between Cu and MgO.

关键词： Cu film biased plasma-sputter-deposition misfit dislocations TCR XHRTEM

Localization effect in single crystal of RuAs2

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2024年第4期33卷 620-625页

作者：易哲铠刘琪光双魁徐升岳小宇梁慧李娜周颖吴丹丹孙燕李秋菊程鹏夏天龙孙学峰王义炎 Anhui Key Laboratory of magnetic Functional materials and Devices Institute of Physical Science and Information TechnologyAnhui University Department of Physics and Key Laboratory of Strongly-Coupled Quantum matter Physics (CAS) University of Science and Technology of China Department of Physics and beijing Key Laboratory of Opto-electronic Functional materials & Micro-nano Devices Renmin University of China School of Optical and Electronic Information Suzhou City University School of Physics and Optoelectronic Engineering Anhui University Collaborative Innovation Center of Advanced Microstructures Nanjing University

We report the magnetotransport and thermal properties of RuAs2single crystal. RuAs2exhibits semiconductor behavior and localization effect. The crossover from normal state to diffusive transport in the weak localization（WL） state and then to variable range hopping（VRH） transport in the strong localization state has been observed. The transitions can be reflected in the measurement of resistivity and Seebeck coefficient. Negative magnetoresistance（NMR） emerges with the appearance of localization effect and is gradually suppressed in high magnetic field. The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH. The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect. Our findings show that RuAs2is a suitable platform to study the localized state.

关键词： weak localization variable range hopping RuAs_2 single crystal

CEPC Technical Design Report

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Radiation Detection technology and Methods 2024年第1期8卷 I0003-I0016,1-1091页

作者： Waleed Abdallah Tiago Carlos Adorno de Freitas Konstantin Afanaciev Shakeel Ahmad Ijaz Ahmed Xiaocong Ai Abid Aleem Wolfgang Altmannshofer Fabio Alves Weiming An Rui An Daniele Paolo Anderle Stefan Antusch Yasuo Arai Andrej Arbuzov Abdesslam Arhrib Mustafa Ashry Sha Bai Yu Bai Yang Bai Vipul Bairathi Csaba Balazs Philip Bambade Yong Ban Tripamo Bandyopadhyay Shou-Shan Bao Desmond P.Barber Ayse Bat Varvara Batozskaya Subash Chandra Behera Alexander Belyaev Michele Bertucci Xiao-Jun Bi yuanjie Bi tianjian Bian Fabrizio Bianchi Thomas Biekotter Michela Biglietti Shalva Bilanishvili Deng Binglin Denis Bodrov Anton Bogomyagkov Serge Bondarenko Stewart Boogert maarten Boonekamp marcello Borri Angelo Bosotti Vincent Boudry Mohammed Boukidi Igor Boyko Ivanka Bozovic Giuseppe Bozzi Jean-Claude Brient Anastasiia Budzinskaya masroor Bukhari Vladimir Bytev Giacomo Cacciapaglia Hua Cai Wenyong Cai Wujun Cai Yijian Cai Yizhou Cai Yuchen Cai Haiying Cai Huacheng Cai Lorenzo Calibbi Junsong Cang Guofu Cao Jianshe Cao Antoine Chance Xuejun Chang Yue Chang Zhe Chang Xinyuan Chang Wei Chao Auttakit Chatrabhuti Yimin Che Yuzhi Che Bin Chen Danping Chen Fuqing Chen Fusan Chen Gang Chen Guoming Chen Hua-Xing Chen huirun Chen Jinhui Chen Ji-yuan Chen Kai Chen mali Chen mingjun Chen mingshui Chen Ning Chen Shanhong Chen Shanzhen Chen Shao-Long Chen Shaomin Chen Shiqiang Chen tianlu Chen Wei Chen Xiang Chen Xiaoyu Chen Xin Chen Xun Chen Xurong Chen Ye Chen Ying Chen Yukai Chen Zelin Chen Zilin Chen Gang Chen Boping Chen Chunhui Chen Hok Chuen Cheng Huajie Cheng Shan Cheng Tongguang Cheng Yunlong Chi Pietro Chimenti Wen Han Chiu Guk Cho ming-Chung Chu Xiaotong Chu Ziliang Chu Guglielmo Coloretti Andreas Crivellin Hanhua Cui Xiaohao Cui Zhaoyuan Cui Brunella D'Anzi ling-Yun Dai Xinchen Dai Xuwen Dai Antonio De maria Nicola De Filippis Christophe De La Taille Francesca De Mori Chiara De Sio Elisa Del Core Shuangxue Deng Wei-tian Deng Zhi Deng Ziyan Deng Bhupal Dev Tang Dewen Biagio Di Micco Ran Ding Siqin Dingl Yadong Ding Haiyi Dong Jianin AGH university of Science and technology Faculty of Physics and Applied Computer ScienceKrakow Anhui university HefeiAnhui Applied Physics Department Federal Urdu University of ArtsScience and TechnologyIslamabad Banaras Hindu university Institute of ScienceVaranasi Bandirma Onyedi Eylul university Bandirma Beihang university Beijing beijing Computational Science Research Center Beijing beijing Conveyi LTD Beijing beijing Glass Research Institute Co. LtdBeijing beijing Institute of technology Beijing beijing Normal university Beijing Brown university ProvidenceRI Budker Institute of Nuclear Physics Novosibirsk Cadi Ayyad university Laboratory of Fundamental and Applied PhysicsPolydisciplinary FacultyMarrakech Cairo university Giza Center for Theory and Computation National Tsing Hua UniversityHsinchu Central china Normal university WuhanHubei Central South university ChangshaHunan Centro de Fisica Teorica de Particulas Universidade Tecnica de LisboaLisboa Chengdu KaitengSifang Digital Radio&TV Equipment Co. LtdChengduSichuan china academy of engineering physics MianyangSichuan china building materials academy Beijing china Center of Advanced Science and technology Beijing china Institute of Atomic Energy Beijing china Jiliang university HangzhouZhejiang china Nuclear Instrument CO. LTDBeijing china university of Geosciences Beijing china university of Geosciences WuhanHubei china university of mining and technology XuzhouJiangsu china West Normal university NanchongSichuan Chongqing university Department of PhysicsChongqing Chulalongkorn university Bangkok City university of Hong Kong Department of PhysicsHong Kong Cockcroft Institute Daresbury Cornell university IthacaNY CPPM(AMU/IPhU&CNRS/INP) Marseille Dalian minzu university DalianLiaoning Dalian university of technology Department of PhysicsDalian Deutsches Elektronen-Synchrotron DESY Hamburg Dzhelepov Laboratory of Nuclear Problems of Joint Institute for Nuclear Research(DLNP JINR) Dubna East china university Of Science And Technol

The Circular Electron Positron Collider(CEPC)is a large scientific project initiated and hosted by china,fostered through extensive collaboration with international *** complex comprises four accelerators:a 30 GeV linac,a 1.1 GeV Damping Ring,a Booster capable of achieving energies up to 180 GeV,and a Collider operating at varying energy modes(Z,W,H,and tt).The linac and Damping Ring are situated on the surface,while the subterranean Booster and Collider are housed in a 100 km circumference underground tunnel,strategically accommodating future expansion with provisions for a potential Super Proton Proton Collider(SPPC).The CEPC primarily serves as a Higgs *** its baseline design with synchrotron radiation(SR)power of 30 MW per beam,it can achieve a luminosity of 5×10^(34)cm^(-2)s^(-1)per interaction point(IP),resulting in an integrated luminosity of 13 ab^(-1)for two IPs over a decade,producing 2.6 million Higgs *** the SR power to 50 MW per beam expands the CEPC's capability to generate 4.3 million Higgs bosons,facilitating precise measurements of Higgs coupling at sub-percent levels,exceeding the precision expected from the HL-LHC by an order of *** Technical Design Report(TDR)follows the Preliminary Conceptual Design Report(Pre-CDR,2015)and the Conceptual Design Report(CDR,2018),comprehensively detailing the machine's layout,performance metrics,physical design and analysis,technical systems design,R&D and prototyping efforts,and associated civil engineering ***,it includes a cost estimate and a preliminary construction timeline,establishing a framework for forthcoming engineering design phase and site selection *** is anticipated to begin around 2027-2028,pending government approval,with an estimated duration of 8 *** commencement of experiments and data collection could potentially be initiated in the mid-2030s.

关键词： initiated exceeding precise

NEOLIGNANS FROM PIPER KADSURA(Ⅱ)

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Chemical Letters 1992年第8期3卷 635-636页

作者： Ying ma Gui qiu HAN tian Yi JIANG Xian Bin YANG National Laboratories of Natural and Biomemtic Drugs,beijing Medical university,beijing 100083

Two new bicyclo[3,2,1]octanoid neolignans,named as kadsurenin I and kadsurenin J were isolated from Piper kadsura(Choiey)*** on the spectros- copic analysis(UV,IR,MS and NMR)and chemical derivatization,their structures were established as 7R,8R,1'R,2'S,3'R-Δ~s'-3,4,5'-trimethoxy-2'-hydroxy-1',2',3',4'- tetrahydro-4'-oxo-7.3',8.1'-neolignan and 7R,8R,1'R,2'S,3'R-Δ~s'-3,4,5'-trimethoxy -2'-acetoxy-1',2',3',4'-tetrabydro-4'-oxo-7.3',8.1'-neolignan respectively.

关键词： NEOLIGNANS FROM PIPER KADSURA

在线全文

学校读者我要写书评

暂无评论

不溶性腐蚀产物在棒束通道内沉积的数值模拟

核科学与工程 2024年第1期44卷 70-79页

作者：陈诺马俊张吉王明军田文喜苏光辉秋穗正西安交通大学核科学与技术学院陕西省先进核能技术重点实验室陕西西安710049 海军装备部装备项目管理中心北京100071

在压水堆运行期间,高压过冷态的冷却剂对燃料棒、堆内构件等部件进行冲刷,以及受管道流体加速腐蚀等效应的影响,堆内会产生不溶性的腐蚀产物,其在堆芯通道内的迁移、沉积会对压水堆的安全性和经济性产生显著影响。本研究提出了压水堆堆... 详细信息

在压水堆运行期间,高压过冷态的冷却剂对燃料棒、堆内构件等部件进行冲刷,以及受管道流体加速腐蚀等效应的影响,堆内会产生不溶性的腐蚀产物,其在堆芯通道内的迁移、沉积会对压水堆的安全性和经济性产生显著影响。本研究提出了压水堆堆芯燃料棒束通道内颗粒沉积的数值模拟方法,基于单相流体标准k-ε模型和颗粒离散相模型,构建了粒状腐蚀产物流动沉积数学物理模型,结合颗粒流动-沉积特性实验的实验结果,验证了该模型的可行性和有效性,开展了不溶性粒状腐蚀产物在5×5带格架棒束通道中流动沉积研究,获得了粒状腐蚀产物在棒束通道内的沉积特性:流体中颗粒浓度在经过格架后明显减少;进口截面处的颗粒浓度在固体壁面较高,出口截面处的颗粒浓度则分布得更均匀;入口处棒束表面及壁面的颗粒沉积呈现为大面积附着沉积,格架表面、其余棒束表面和壁面的颗粒沉积呈现为点状附着沉积。

关键词：压水堆 5×5棒束通道格架颗粒沉积数值模拟

STCF conceptual design report (Volume 1): Physics & detector

在线全文

学校读者我要写书评

暂无评论

Frontiers of physics 2024年第1期19卷 1-154页

作者： M.Achasov X.C.Ai L.P.An R.Aliberti Q.An X.Z.Bai Y.Bai O.Bakina A.Barnyakov V.Blinov V.Bobrovnikov D.Bodrov A.Bogomyagkov A.Bondar I.Boyko Z.H.Bu F.M.Cai H.Cai J.J.Cao Q.H.Cao X.Cao Z.Cao Q.Chang K.T.Chao D.Y.Chen H.Chen H.X.Chen J.F.Chen K.Chen L.L.Chen P.Chen S.L.Chen S.M.Chen S.Chen S.P.Chen W.Chen X.Chen X.F.Chen X.R.Chen Y.Chen Y.Q.Chen H.Y.Cheng J.Cheng S.Cheng T.G.Cheng J.P.Dai L.Y.Dai X.C.Dai D.Dedovich A.Denig I.Denisenko J.M.Dias D.Z.Ding L.Y.Dong W.H.Dong V.Druzhinin D.S.Du Y.J.Du Z.G.Du L.M.Duan D.Epifanov Y.L.Fan S.S.Fang Z.J.Fang G.Fedotovich C.Q.Feng X.Feng Y.T.Feng J.L.Fu J.Gao Y.N.Gao P.S.Ge C.Q.Geng L.S.Geng A.Gilman L.Gong T.Gong B.Gou W.Gradl J.L.Gu A.Guevara L.C.Gui A.Q.Guo F.K.Guo J.C.Guo J.Guo Y.P.Guo Z.H.Guo A.Guskov K.L.Han L.Han M.Han X.Q.Hao J.B.He S.Q.He X.G.He Y.L.He Z.B.He Z.X.Heng B.L.Hou T.J.Hou Y.R.Hou C.Y.Hu H.M.Hu K.Hu R.J.Hu W.H.Hu X.H.Hu Y.C.Hu J.Hua G.S.Huang J.S.Huang M.Huang Q.Y.Huang W.Q.Huang X.T.Huang X.J.Huang Y.B.Huang Y.S.Huang N.Hüsken V.Ivanov Q.P.Ji J.J.Jia S.Jia Z.K.Jia H.B.Jiang J.Jiang S.Z.Jiang J.B.Jiao Z.Jiao H.J.Jing X.L.Kang X.S.Kang B.C.Ke M.Kenzie A.Khoukaz I.Koop E.Kravchenko A.Kuzmin Y.Lei E.Levichev C.H.Li C.Li D.Y.Li F.Li G.Li G.Li H.B.Li H.Li H.N.Li H.J.Li H.L.Li J.M.Li J.Li L.Li L.Li L.Y.Li N.Li P.R.Li R.H.Li S.Li T.Li W.J.Li X.Li X.H.Li X.Q.Li X.H.Li Y.Li Y.Y.Li Z.J.Li H.Liang J.H.Liang Y.T.Liang G.R.Liao L.Z.Liao Y.Liao C.X.lin D.X.lin X.S.lin B.J.liu C.W.liu D.liu F.liu G.M.liu H.B.liu J.liu J.J.liu J.B.liu K.liu K.Y.liu K.liu L.liu Q.liu S.B.liu T.liu X.liu Y.W.liu Y.liu Y.L.liu Z.Q.liu Z.Y.liu Z.W.liu I.Logashenko Y.Long C.G.Lu J.X.Lu N.Lu Q.F.Lü Y.Lu Y.Lu Z.Lu P.Lukin F.J.Luo T.Luo X.F.Luo Y.H.Luo H.J.Lyu X.R.Lyu J.P.ma P.ma Y.ma Y.M.ma F.maas S.malde D.matvienko Z.X.Meng R.Mitchell A.Nefediev Y.Nefedov S.L.Olsen Q.Ouyang P.Pakhlov G.Pakhlova X.Pan Y.Pan E.Passemar Y.P.Pei H.P.Peng L.Peng X.Y.Peng X.J.Peng K.Peters S.Pivovarov E.Pyata B.B.Qi Y.Q.Qi W.B.Qian Y.Qian C.F.Qiao J.J.Qin J.J.Qin L.Q.Qin X.S.Qin T.L.qiu J.Rademacker C.F.Redmer H.Y.Sang Anhui university Hefei 230039China Beihang university Beijing 100191China Budker Institute of Nuclear Physics Novosibirsk 630090Russia CAS Key Laboratory of Theoretical Physics Institute of Theoretical PhysicsChinese Academy of SciencesBeijing 100190China Cavendish Laboratory University of CambridgeJJ Thomson AveCambridge CB30HEUnited Kingdom Central china Normal university Wuhan 430079China Central South university Changsha 410083China china university of Geosciences Wuhan 430074China china university of mining and technology Xuzhou 221116China École Polytechnique Fédérale de Lausanne(EPFL) LausanneSwitzerland Fudan university Shanghai 200433China Goethe university Frankfurt D-60325 Frankfurt am MainGermany Guangxi Normal university Guilin 541004China Guangxi Uninversity Nanning 530004China Hangzhou Institute for Advanced Study UCASHangzhou 310024China Hebei Normal university Shijiazhuang 050024China Hebei university Baoding 071002China Hefei university of technology Hefei 230601China Helmholtz Institute mainz Staudinger Weg 18D-55099 MainzGermany Henan Normal university Xinxiang 453007China Henan university Kaifeng 475004China High Energy Physics Center Chung-Ang UniversitySeoul 06974Korea Higher School of Economy 11 Pokrovsky Bulvar Moscow 109028Russia Huangshan university Huangshan 245000China Hubei university of Automotive technology Shiyan 442002China Hunan Normal university Changsha 410081China Hunan university of Science and technology Xiangtan 411201China Hunan university Changsha 410082China Indiana university BloomingtonIndiana 47405USA Inner Mongolia university Hohhot 010021China Institute of Advanced Science Facilities Shenzhen 518107China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China Institute of Physics Academia SinicaTaipeiTaiwan 11529China Institute of Theoretical Physics Chinese Academy of SciencesBeijing 100190China Jilin university Changch

The superτ-charm facility(STCF)is an electron–positron collider proposed by the Chinese particle physics *** is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of 0.5×10^(35) cm^(–2)·s^(–1) or *** STCF will produce a data sample about a factor of 100 larger than that of the presentτ-charm factory—the BEPCII,providing a unique platform for exploring the asymmetry of matter-antimatter(charge-parity violation),in-depth studies of the internal structure of hadrons and the nature of non-perturbative strong interactions,as well as searching for exotic hadrons and physics beyond the Standard *** STCF project in china is under development with an extensive R&D *** document presents the physics opportunities at the STCF,describes conceptual designs of the STCF detector system,and discusses future plans for detector R&D and physics case studies.

关键词： electron–positron collider tau-charm region high luminosity STCF detector conceptual design

不同变异系数煤层应力场与瓦斯场规律的数值模拟研究

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

西安科技大学学报 2024年第2期44卷 268-278页

作者：王峰刘强邱黎明刘勇徐九洲郭明功马涛张国雷永贵能源开发有限责任公司西秀分公司贵州安顺561001 北京科技大学土木与资源工程学院北京100083 河南理工大学瓦斯地质与瓦斯治理国家重点实验室培育基地河南焦作454000 平顶山天安煤业股份有限公司河南平顶山467100

为揭示煤层厚度变化对煤层突出危险性的影响,建立了煤层变形场和瓦斯场耦合模型,并基于高斯分布建立了不同煤层变异系数的煤层模型,揭示了不同变异系数下的煤层应力场和瓦斯场分布规律。结果表明:稳定煤层与非稳定煤层应力场差别显著,... 详细信息

为揭示煤层厚度变化对煤层突出危险性的影响,建立了煤层变形场和瓦斯场耦合模型,并基于高斯分布建立了不同煤层变异系数的煤层模型,揭示了不同变异系数下的煤层应力场和瓦斯场分布规律。结果表明:稳定煤层与非稳定煤层应力场差别显著,非稳定煤层在煤层较薄处产生了应力集中现象,向厚煤层区域掘进时呈线性减小;煤层较厚处稳定煤层的应力大于非稳定煤层,且随着煤层变异系数的增加进一步减小;不同变异系数煤层随着变异系数的增加应力逐渐增加,主应力的增长速率随着掘进距离的增加逐渐增加;煤层厚度变化导致了煤层受到顶板的水平应力作用,在煤层较薄处,顶板水平应力指向煤层,导致煤层较薄处产生了应力集中,在煤层较厚处,顶板水平应力背离煤层,导致煤层应力相比较薄处小,且瓦斯浓度大、渗透率小、构造煤发育较多,在扰动下容易发生突出。

关键词：煤与瓦斯突出煤层厚度煤层变异系数多物理场瓦斯压力

维普期刊数据库博看期刊