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Optoelectronic Synapses Based on MXene/Violet Phosphorus van der Waals heterojunctions for Visual‑Olfactory Crossmodal Perception

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Nano-Micro Letters 2024年第6期16卷 38-52页

作者： Hailong Ma Huajing Fang Xinxing Xie Yanming Liu he tian Yang Chai Center for Advancing Materials Performance From the Nanoscale(CAMP‑Nano) State Key Laboratory for Mechanical Behavior of MaterialsXi’an Jiaotong UniversityXi’an 710049People’s Republic of China Institute of Microelectronics and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China Department of Applied Physics The Hong Kong Polytechnic UniversityHong KongPeople’s Republic of China

The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception,but related researches are ***,we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus(VP)van der Waals *** from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene,the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude,reaching up to 7.7 A W^(−1).Excited by ultraviolet light,multiple synaptic functions,including excitatory postsynaptic currents,pairedpulse facilitation,short/long-term plasticity and“learning-experience”behavior,were demonstrated with a low power ***,the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments,enabling it to simulate the interaction of visual and olfactory information for crossmodal *** work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.

关键词： Violet phosphorus MXene Van der Waals heterojunctions Optoelectronic synapses Crossmodal perception

Highly sensitive flexible strain sensor based on the two-dimensional semiconductor tellurium with a negative gauge factor

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Science China(Information Sciences) 2024年第7期67卷 295-304页

作者： Jiarui he Yusong QU Shengyao CheN Cong WANG Lena DU Xiaoshan DU Yuanyuan ZheNG Guozhong ZHAO he tian College of Mathematics and Physics Beijing University of Chemical Technology School of Integrated Circuits Tsinghua University Beijing China & The Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology &University of Chinese Academy of Sciences Beijing Key Lab of Terahertz Spectroscopy and Imaging Key Lab of Terahertz OptoelectronicsMinistry of Education Department of Physics Capital Normal University

Research on flexible strain sensors has advanced rapidly in recent years, with particular attention being devoted to two-dimensional(2D) semiconductor materials owing to their exceptional mechanical and electrical properties that are conducive to sophisticated sensing performance. However, resistive strain sensors based on 2D semiconductor materials typically exhibit positive gauge factors(GF), while materials for strain sensors with a negative GF remain elusive. We have identified a trend of reduction in the band gap of the emerging 2D semiconductor material tellurium(Te) under strain in simulations reported in past research,and have observed a negative GF in the Te-based strain sensor. In this study, we combined Te with a flexible polyethylene terephthalate(PET) substrate to manufacture a flexible strain sensor with a significantly negative GF. The results of tests revealed that the Te-based strain sensor achieved an impressive maximum sensitivity of-139.7 within a small range of bending-induced strain(hermore, it exhibited excellent linearity and good cyclic stability, and was successfully applied to monitor limb movements. The work here verifies the significant potential for the use of Te-based strain sensors in next-generation flexible electronics.

关键词： 2D semiconductor materials 2D tellurium flexibleelectronics strain sensors negative gauge factor high sensitivity

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heptamethine cyanines in bioorthogonal chemistry

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Chinese Chemical Letters 2024年第2期35卷 131-137页

作者： Yuanyuan Liao Yuting Liang Yurou Huang Xiaoyan Zeng tian he Jun Yin National Key Laboratory of Green Pesticide International Joint Research Center for Intelligent Biosensor Technology and HealthCollege of ChemistryCentral China Normal UniversityWuhan 430079China

Due to their excellent fluorescence properties and biological function,cyanine dyes have been widely applied in biological *** cyanine(Cy7)dyes,as a type of classic near-infrared(NIR)fluorescent dyes,are considered as one of the effective fluorescent tools in the living organisms due to their good biocompatibility and very low background *** reactions performed in living cells and tissues have developed by leaps and bounds in recent *** NIR fluorescent labeling technique involving cyanine has attracted widespread *** review summarizes their recent application in the field of bioorthogonal imaging,mainly concluding Cy7-type dyes,labeling strategy,bioimaging application,*** expect this work can provide some helps for the studies of NIR bioorthogonal reaction in vivo.

关键词： Fluorescent probes heptamethine cyanines Bioorthogonal reaction Imaging Cell

Controls of strike-slip fault on fractures:Insight from 3D discrete element simulation

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Science China Earth Sciences 2024年第1期67卷 146-164页

作者： Lianbo ZENG Zhe MAO Guoping LIU he tian Yingtao YAO Kewei ZU Shaoqun DONG Mehdi OSTADHASSAN State Key Laboratory of Petroleum Resources and Prospecting China University of Petroleum(Beijing)Beijing 102249China College of Geosciences China University of Petroleum(Beijing)Beijing 102249China Institute of Energy Peking UniversityBeijing 100871China Exploration and Development Research Institute Zhongyuan Oilfield Branch CompanySINOPECZhengzhou 457001China Northeast Petroleum University Daqing 163318China

The fracture-cave reservoirs controlled by strike-slip faults are the main targets for oil and gas exploration of ultradeep carbonate in the Tarim *** is of great significance to clarify the distribution rules of fractures related to strike-slip faults for guiding the exploration and development of ultra-deep oil and *** this study,six groups of strike-slip fault 3D models based on discrete element numerical simulation method have been created to investigate characteristics of fault-related fracture development and distribution *** addition,we compared the modeling results to the measurement of fractures from the outcrop of a strike-slip fault in the Northern Tarim Basin to verify their *** results show that the stress environment is stable in the simple strike-slip section,and fractures intersecting with the strike-slip direction at a small angle are the principal *** the releasing stepover and double-bend sections,the maximum principal stress changes from horizontal to vertical during the formation of pull-apart zones,where the principal fractures intersect the strike-slip direction at a large *** maximum principal stress in the restraining stepover and double-bend section remains horizontal,but their strikes change significantly with the increment of fault ***,fractures intersecting the strike-slip direction at a small angle will become principal fractures early on,while those parallel to or anti-intersecting the strike-slip direction at a small angle will become principal fractures *** are obvious differences in the development of fractures in different structural positions of strike-slip *** are mainly concentrated in the fault tips,connections,and fault plane,and the magnitude of the fault damage zone is relatively larger in the first *** with fault displacement,the principal damage zone(PDZ)shows stronger control on the distribution and development intensity of *** the in

关键词： Strike-slip fault Fault-related fracture Stepover Double-bend Discrete element method

The Roadmap of 2D Materials and Devices Toward Chips

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Nano-Micro Letters 2024年第6期16卷 343-438页

作者： Anhan Liu Xiaowei Zhang Ziyu Liu Yuning Li Xueyang Peng Xin Li Yue Qin Chen Hu Yanqing Qiu Han Jiang Yang Wang Yifan Li Jun Tang Jun Liu Hao Guo Tao Deng Songang Peng he tian tian‑Ling Ren School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100049People’s Republic of China School of Microelectronics Fudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of Dynamic Measurement Technology Shanxi Province Key Laboratory of Quantum Sensing and Precision MeasurementNorth University of ChinaTaiyuan 030051People’s Republic of China High‑Frequency High‑Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029People’s Republic of China School of Electronic and Information Engineering Beijing Jiaotong UniversityBeijing 100044People’s Republic of China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049People’s Republic of China IMECAS-HKUST-Joint Laboratory of Microelectronics Beijing 100029People’s Republic of China

Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s ***-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation ***,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given *** 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are ***,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are ***,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.

关键词： Two-dimensional materials Roadmap Integrated circuits Post-Moore era

Vanadium nitride quantum dots@carbon skeleton anode material synthesized via in situ oxidation initiation strategy

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Tungsten 2024年第3期6卷 561-573页

作者： Yi-Han Fu Yuan-You Peng Lei Zhao tian-Qi he Mei-Mei Yuan Hao Dang Rui Liu Fen Ran State Key Laboratory of Advanced Processing and Recycling of Non-Ferrous Metals School of Materials Science and Engineering Lanzhou University of Technology

Vanadium nitride（VN） has received significant attention as a potential negative electrode material due to its remarkable theoretical and physical ***,the electrochemical performance needs to be improved due to its low specific surface area and the issue of being easily dissolved in *** have shown that the composite structure of carbon-coated nano sc ale VN particles could significantly increase the specific surface area of VN,and more importantly,and the carbon matrix can effectively restrain the dissolution of VN particles in the electrolyte,thereby improving its chemical and electrochemical performance,including specific capacity and cycling ***,VN quantum dots are synthesized and protected by uniformly coating the carbon skeleton on its surface via an in situ strategy of oxidation initiation,which initiates dopamine polymerization,forming a crystalline complex of polydopamine and *** heat treatment,the product is a composite material with VN quantum dots embedded in the amorphous carbon *** resulting smallsized and crosslinked carbon particles formed a graded pore structure,more reasonable channels provided for electrolyte ions transport *** the composite material was used as the negative electrode material for supercapacitors,it exhibits the specific capacity of 391.9 F·g-1at a current density of 0.5 A·g-1and excellent capacity retention rate of 83.6% after *** synthesis method of this quantum dot could be applied to other metal compounds and has potential applications in catalysis,environmental protection,and other fields.

关键词： In situ initiation Vanadium nitride Quantum dots Anode Supercapacitors

Controllable thermal rectification design for buildings based on phase change composites

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Journal of Semiconductors 2024年第2期45卷 40-45页

作者： hengbin Ding Xiaoshi Li tianhang Li Xiaoyong Zhao he tian School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084China Zhuhai Huafa Properties Co. LtdZhuhai 519030China

Phase-change material(PCM)is widely used in thermal management due to their unique thermal ***,related research in thermal rectifier is mainly focused on exploring the principles at the fundamental device level,which results in a gap to real ***,we propose a controllable thermal rectification design towards building applications through the direct adhesion of composite thermal rectification material(TRM)based on PCM and reduced graphene oxide(rGO)aerogel to ordinary concrete walls(CWs).The design is evaluated in detail by combining experiments and finite element *** is found that,TRM can regulate the temperature difference on both sides of the TRM/CWs system by thermal *** difference in two directions reaches to 13.8 K at the heat flow of 80 W/m^(2).In addition,the larger the change of thermal conductivity before and after phase change of TRM is,the more effective it is for regulating temperature difference in two *** stated technology has a wide range of applications for the thermal energy control in buildings with specific temperature requirements.

关键词： phase change composites controllable thermal rectification building applications

Bidirectional rectifier with gate voltage control based on Bi_(2)O_(2)Se/WSe_(2)heterojunction

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Journal of Semiconductors 2024年第1期45卷 63-70页

作者： Ruonan Li Fangchao Lu Jiajun Deng Xingqiu Fu Wenjie Wang he tian North China Electric Power University and hebei Key Laboratory of Physics and Energy Technology Beijing 102206China School of Integrated Circuits&Beijing National Research on Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084China

Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar *** WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most devices have a lower rectification *** this work,the Bi_(2)O_(2)Se/WSe_(2)heterojunction prepared by us has a typeⅡband alignment,which can vastly suppress the channel current through the interface barrier so that the Bi_(2)O_(2)Se/WSe_(2)heterojunction device has a large rectification ratio of about 10^(5).Meanwhile,under different gate voltage modulation,the current on/off ratio of the device changes by nearly five orders of magnitude,and the maximum current on/off ratio is expected to be achieved *** photocurrent measurement reveals the behavior of recombination and space charge confinement,further verifying the bidirectional rectification behavior of heterojunctions,and it also exhibits excellent performance in light *** the future,Bi_(2)O_(2)Se/WSe_(2)heterojunction field-effect transistors have great potential to reduce the volume of integrated circuits as a bidirectional controlled switching device.

关键词： Bi_(2)O_(2)Se WSe_(2) heterojunction bidirectional rectification optoelectronic devices

基于减速度包络线修正的新型防滑效率计算方法

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交通运输工程学报 2024年第2期24卷 193-206页

作者：翟耕慰田春马天和陈超王国壮同济大学铁道与城市轨道交通研究院上海201804 常州大学机械与轨道交通学院江苏常州213164

为解决现有防滑效率计算方法准确性低、评价效果差等问题,在深入分析列车制动防滑过程中轮轨黏着系数变化规律及特点的基础上,修正了列车制动防滑过程减速度峰值包络线,使其接近理想减速度曲线,进而提出一种新型防滑效率计算方法;结合... 详细信息

为解决现有防滑效率计算方法准确性低、评价效果差等问题,在深入分析列车制动防滑过程中轮轨黏着系数变化规律及特点的基础上,修正了列车制动防滑过程减速度峰值包络线,使其接近理想减速度曲线,进而提出一种新型防滑效率计算方法;结合列车制动防滑系统实际工作原理,搭建了列车制动防滑效率仿真验证平台,在仿真层面验证了减速度包络线修正的正确性和新型防滑效率计算方法的准确性;在不同仿真工况下对比分析了6种防滑效率计算方法的合理性和防滑性能评价效果,并基于实车防滑试验验证了新方法的实用性。研究结果表明:搭建的列车制动防滑效率仿真验证平台所得列车制动时间、制动距离等计算结果与相同工况下实车防滑试验结果的相对误差不超过5%,可用来验证和分析防滑效率计算方法与防滑性能评价效果;修正后的减速度峰值包络线与理想减速度曲线的相对误差不超过4.5%;当防滑控制策略不变时,新型防滑效率计算方法对列车在不同制动级位和黏着水平下的仿真结果相差不超过1.1%,试验结果相差不超过3.5%,且防滑效率均小于100%,稳定性良好;采用不同防滑控制策略时,新型防滑效率计算方法的仿真结果存在明显差异,且不同控制策略对应的防滑效率与其防滑性能正相关,能体现出不同防滑系统间的性能差异;新型防滑效率计算方法能通过实车防滑试验计算防滑效率,为实车提供了一种新的防滑性能评价手段。

关键词：铁道车辆制动系统防滑效率减速度包络线联合仿真实车防滑试验