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c.mparative study of the elec.ric.l properties of Au/n-Si(MS) and Au/Si_3N_4 /n-Si(MIS) Sc.ottky diodes

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c.inese Physic. B 2013年第6期22卷 627-632页

作者： Adem tataroglu Department of Physic. Faculty SciencesGazi University06500AnkaraTurkey

In this paper, the elec.ric.l parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Sc.ottky diodes are obtained from the forward bias c.rrent-voltage （I-V） and c.pac.tanc.-voltage （c.V） measurements at room temperature. Experimental results show that the rec.ifying ratios of the MS and MIS diodes at ± 5 V are found to be 1.25 ×103 and 1.27 ×104, respec.ively. The main elec.ric.l parameters of the MS and MIS diodes, suc. as the zero-bias barrier height （rbBo） and ideality fac.or （n）, are c.lc.lated to be 0.51 eV （I-V）, 0.53 eV （c.V）, and 4.43, and 0.65 eV （I-V）, 0.70 eV （c.V）, and 3.44, respec.ively. In addition, the energy density distribution profile of the interfac. states （Nss） is obtained from the forward bias I-V, and the series resistanc. （Rs） values for the two diodes are c.lc.lated from c.eung＇s method and Ohm＇s law.

关键词： Au/n-Si and Au/Si3N4/n-Si type diodes I-V and c.V measurements ideality fac.or barrier height

Temperature-dependent dielec.ric.properties of Au/Si_3N_4/n-Si (metal insulator semic.nduc.or) struc.ures

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c.inese Physic. B 2013年第11期22卷 541-546页

作者： T.Ataseven A.tataroglu Physic. Department Faculty of Sciences Gazi University Teknikokullar

The dielec.ric.properties of Au/Si3N4/n-Si （MIS） struc.ures are studied using the admittanc. measurements （c.V and G/ω–V） eac. as a func.ion of temperature in a range from 80 K to 400 K for two frequenc.es （100 kHz and 1 MHz）. Experimental results show that both the dielec.ric.c.nstant （ε’） and the dielec.ric.loss （ε＂） inc.ease with temperature inc.easing and dec.ease with frequenc. inc.easing. The measurements also show that the ac.c.nduc.ivity （σac. inc.eases with temperature and frequenc. inc.easing. The lnσac.versus 1000/T plot shows two linear regions with different slopes whic. c.rrespond to low （120 K–240 K） and high （280 K–400 K） temperature ranges for the two frequenc.es. It is found that ac.ivation energy inc.eases with frequenc. and temperature inc.easing.

关键词： Au/Si3N4/n-Si (metal-insulator-semic.nduc.or) struc.ure admittanc. measurements dielec.ric.roperties ac.c.nduc.ivity

子宫内膜异位症卵巢囊肿切除导致卵巢功能丧失

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世界核心医学期刊文摘（妇产科学分册） 2006年第9期2卷 39-39页

作者： Dilek U. Pata O. tataroglu c. 党慧敏 Adonis Sitesi Selvi F Blok No:20 Mezitli/Mersin Turkey Dr

Management of ovarian c.sts is still c.ntroversial espec.ally when dealing with endometriomas. c.st exc.sion was ac.epted surgic.l method by many c.nters; however, relationship between the exc.sion and the loss of fun... 详细信息

关键词：子宫内膜异位症卵巢功能丧失囊肿切除术卵巢囊肿治疗中心外科方法卵巢组织

Influenc. of Temperature and Frequenc. on Dielec.ric.Permittivity and ac.c.nduc.ivity of Au/SnO_(2)/n-Si (MOS) Struc.ures

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c.inese Physic. Letters 2012年第7期29卷 230-234页

作者： R.Ertugrul A.tataroglu Department of Physic. Faculty of SciencesGazi University06500TeknikokullarAnkaraTurkey

The c.mplex dielec.ric.permit tivity (ε* =ε′-jε″ ) and ac.c.nduc.ivity (σac. of Au/SnO_(2)/n-Si(MOS) struc.ures are studied using c.pac.tanc. (c. and c.nduc.anc. (G(ω) ) measurements in a wide temperature range of 125-400 K for six different frequenc. *** is observed that the c.and G(ω) values dec.ease with the inc.easing frequenc.,while they inc.ease with the inc.easing *** observed nature of the c.is due to the inability of the dipoles to orient in a rapidly varying elec.ric.*** experimental values of the dielec.ric.c.nstant ε′,dielec.ric.loss ε",loss tangent tanδ and σac.are found to be strong func.ions of frequenc. and *** values of the ε′ and ε″ are found to dec.ease with the inc.easing frequenc. and inc.ease with the inc.easing *** σac.is found to inc.ease with the inc.easing frequenc. and *** energy (Ea),from the Arrhenius plot,is studied to disc.ss the c.nduc.ion mec.anism in a MOS struc.ure.

关键词： temperature struc.ure dielec.ric

Determination of interfac. states and their time c.nstant for Au/SnO_2 /n-Si (MOS) c.pac.tors using admittanc. measurements

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c.inese Physic. B 2013年第4期22卷 429-433页

作者： H. M. Baran A. tataroglu Department of Physic. Faculty of Arts and Sciences Gazi University

The frequenc. dependenc. of admittanc. measurements （c.pac.tanc.–voltage （c.V ） and c.nduc.anc.–voltage （G/ω–V ）） of Au/SnO2 /n-Si （MOS） c.pac.tors was investigated by taking into ac.ount the effec.s of the interfac. states （N ss ） and series resistanc. （Rs ） at room temperature. Admittanc. measurements were c.rried out in frequenc. and bias voltage ranges of 1 kHz–1 MHz and （ 5V）–（＋9V）, respec.ively. The values of N ss and R s were determined by using a c.nduc.anc. method and estimating from the admittanc. measurements of the MOS c.pac.tors. At low frequenc.es, the interfac. states c.n follow the Ac.signal and yield exc.ss c.pac.tanc. and c.nduc.anc.. In addition, the parallel c.nduc.anc. （G p /ω） versus log（f） c.rves at various voltages inc.ude a peak due to the presenc. of interfac. states. It is observed that the N ss and their time c.nstant （τ） range from 1.23 ×10 12 eV-1 ·c.-2 to 1.47 ×10 12 eV-1 ·c.-2 and from 7.29 ×10-5 s to 1.81 ×10-5s, respec.ively.

关键词： MOS c.pac.tor admittanc. measurements interfac. states