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Coaxial boron nitride nanotubes as interfacial dielectric layers to lower interface trap density in carbon nanotube transistors

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Nano Research 2023年第11期16卷 12840-12848页

作者： Keigo Otsuka taiki sugihara taiki Inoue Weijie Jia Satoru Matsushita Takanobu Saito Minhyeok Lee Takashi Taniguchi Kenji Watanabe Gregory Pitner Ming-Yang Li Tzu-Ang Chao Rong Xiang Shohei Chiashi Shigeo Maruyama Department of Mechanical Engineering The University of TokyoTokyo 113-8656Japan Department of Applied Physics Osaka UniversityOsaka 565-0871Japan Research Center for Materials Nanoarchitectonics National Institute for Materials ScienceTsukuba 305-0044Japan Research Center for Electronic and Optical Materials National Institute for Materials ScienceTsukuba 305-0044Japan Corporate Research Taiwan Semiconductor Manufacturing CompanySan JoseCA 95134USA Corporate Research Taiwan Semiconductor Manufacturing CompanyHsinchu 30078

A semiconductor/dielectric interface is one of the dominant factors in device characteristics,and a variety of oxides with high dielectric constants and low interface trap densities have been used in carbon nanotube *** the crystal structure of nanotubes with no dangling bonds,there remains room to investigate unconventional dielectric ***,we fabricate carbon nanotube transistors with boron nitride nanotubes as interfacial layers between channels and gate dielectrics,where a single semiconducting nanotube is used to focus on switching behaviors at the subthreshold *** subthreshold swing of 68 mV·dec^(−1)is obtained despite a 100-nm-thick Sio_(2)dielectric,corresponding to the effective interface trap density of 5.2×10^(11)cm^(−2)·eV^(−1),one order of magnitude lower than those of carbon nanotube devices without boron nitride *** interfacial layers also result in the mild suppression of threshold voltage variation and *** achieve Ohmic contacts through the selective etching of boron nitride nanotubes with XeF2 gas,overcoming the trade-off imposed by wrapping the inner *** impacts of fluorinating carbon nanotubes on device performances are also confirmed as long as the etching is applied exclusively at source/drain *** results represent an important step toward nanoelectronics that exploit the advantage of one-dimensional van der Waals heterostructures.

关键词： carbon nanotubes hexagonal boron nitride van der Waals interfaces field-effect transistors subthreshold swing selective etching

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